JPS6262463B2 - - Google Patents

Info

Publication number
JPS6262463B2
JPS6262463B2 JP57028519A JP2851982A JPS6262463B2 JP S6262463 B2 JPS6262463 B2 JP S6262463B2 JP 57028519 A JP57028519 A JP 57028519A JP 2851982 A JP2851982 A JP 2851982A JP S6262463 B2 JPS6262463 B2 JP S6262463B2
Authority
JP
Japan
Prior art keywords
wafer
chuck
supply
unloading
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57028519A
Other languages
Japanese (ja)
Other versions
JPS58147039A (en
Inventor
Tatsuhiko Nishimura
Eiji Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP2851982A priority Critical patent/JPS58147039A/en
Publication of JPS58147039A publication Critical patent/JPS58147039A/en
Publication of JPS6262463B2 publication Critical patent/JPS6262463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、CVD装置用ウエハセツターに関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wafer setter for a CVD apparatus.

〔発明の技術的背景〕[Technical background of the invention]

従来、CVD装置の加熱板上に被処理体である
ウエハを設置する場合、キヤリア上のウエハをバ
キユームピンセツトで吸着して保持し、手作業に
よつてバキユームピンセツトを加熱板の上方に移
送することにより行つていた。また、処理後の被
処理体は、バキユームピンセツトを使用して前述
の設置操作と同様の操作を逆の手順ですることに
より、キヤリア上に収納されていた。
Conventionally, when placing a wafer as an object to be processed on the heating plate of a CVD device, the wafer on the carrier was attracted and held with vacuum tweezers, and the vacuum tweezers were manually moved above the heating plate. This was done by transferring it to Further, the processed object was stored on the carrier by performing the same operation as the above-mentioned installation operation in reverse order using vacuum tweezers.

〔背景技術の問題点〕[Problems with background technology]

このようなバキユームピンセツトを使用してウ
エハを加熱板上に設置し、またキヤリア上に収納
するものでは、次のような欠点がある。
Using such vacuum tweezers to place the wafer on a heating plate and storing it on a carrier has the following drawbacks.

バキユームピンセツトで吸着する際に、ウエ
ハの表面に傷がつく。
The surface of the wafer is scratched when it is picked up with vacuum tweezers.

被処理後のウエハをバキユームチヤツクで吸
着して保持する際に、ウエハの表面に形成され
た薄膜にバキユームチヤツクの傷が付き、不良
製品が発生する。
When the wafer to be processed is sucked and held by a vacuum chuck, the thin film formed on the surface of the wafer is scratched by the vacuum chuck, resulting in defective products.

バキユームチヤツクによるウエハの設置及び
回収は、手作業で行われるため、作業時間が長
くなる。
The installation and collection of wafers using a vacuum chuck is performed manually, which requires a long working time.

〔発明の目的〕[Purpose of the invention]

本発明は、薄膜形成処理の前後でウエハの表面
に損傷が発生するのを防止し、かつ、ウエハの移
送操作を自動化して作業性の向上を図つたCVD
装置用ウエハセツターを提供するものである。
The present invention aims to improve workability by preventing damage to the wafer surface before and after thin film forming processing, and by automating the wafer transfer operation.
The present invention provides a wafer setter for equipment.

〔発明の概要〕 本発明は、ウエハを水平状態で固定する吸着部
を備えた供給用チヤツク及び搬出用チヤツクをウ
エハ供給搬出部に設け、このウエハ供給搬出部か
らウエハを水平状態で収容する収容部を備えたバ
キユームヘツドによりウエハを搬出してヒータブ
ロツク上に供給し、処理後にヒータブロツクから
ウエハ供給搬出部に戻すようにしたので、薄膜形
成処理の前後でウエハの表面に損傷が発生するの
を防止し、かつ、ウエハの移送操作を自動化して
作業性を向上させることができるCVD装置用ウ
エハセツターである。
[Summary of the Invention] The present invention provides a storage system in which a wafer supply/unloading section is provided with a supply chuck and an unloading chuck equipped with a suction section for fixing wafers in a horizontal state, and a storage system is provided in which wafers are received horizontally from the wafer supply/unloading section. The wafer is carried out and fed onto the heater block using a vacuum head equipped with a section, and after processing is returned from the heater block to the wafer supply and carry-out section, thereby preventing damage to the wafer surface before and after the thin film forming process. This is a wafer setter for CVD equipment that can prevent this and improve work efficiency by automating the wafer transfer operation.

〔発明の実施例〕[Embodiments of the invention]

本発明の実施例について図面を参照して説明す
る。第1図は、本発明の一実施例の正面図、第2
図は、同実施例の側面図である。図中1は、ウエ
ハ供給搬出部である。ウエハ供給搬出部1には、
供給用チヤツク2……と搬出用チヤツク3……が
複数個設けられている。供給用チヤツク2……及
び搬出用チヤツク3……は昇降シリンダー4を取
付けた基台5上に立設されている。供給用チヤツ
ク2……及び搬出用チヤツク3……は、昇降シリ
ンダー4によつて昇降動するようになつている。
供給用チヤツク2……及び搬出用チヤツク3……
の先端部には、ウエハ6を水平状態で固定する吸
着部7が設けられている。吸着部7は、供給用チ
ヤツク2……搬出用チヤツク3……の中空部を介
して図示しない排気機構に連通した開口を先端面
に有しており、排気機構により中空部内を減圧状
態にしてウエハ6を固定するようになつている。
吸着部7の近傍には、ウエハセンサ8とウエハス
トツパ9が夫々設けられている。ウエハストツパ
9は、供給用チヤツク2……及び搬出用チヤツク
3……の昇降動方向に沿つて上下動するようにな
つている。ウエハ供給搬出部1の近傍には、処理
前のウエハ6が収納されたキヤリアエレベータ1
0と、処理後のウエハ6が収納されるキヤリアエ
レベータ11とが昇降自在に設けられている。こ
れらのキヤリアエレベータ10,11と供給用チ
ヤツク2……及び搬出用チヤツク3……間には搬
送ベルト12が介在されている。キヤリアエレベ
ータ10,11は、供給用チヤツク2……と搬出
用チヤツク3……及びウエハストツパ9の昇降動
に同期して上下動するようになつている。供給用
チヤツク2……及び搬出用チヤツク3……の上方
には、これらに対向してバキユームヘツド13が
設けられている。バキユームヘツド13は、支持
アーム14に取付けられている。支持アーム14
は、ウエハ供給搬出部1と図示しないCVD装置
本体内に出入するヒータブロツク15間の上方に
架設されたヘツドガイド16上を駆動モータ23
によつて往復動するようになつている。支持アー
ム14には、バキユームヘツド13をヘツドガイ
ド16とヒータブロツク15間で上下動させる昇
降シリンダ17が取付けられている。バキユーム
ヘツド13の先端部には、第3図に示す如く、ウ
エハ6を水平状態で保持するようにすり鉢状の収
容部18が形成されている。バキユームヘツド1
3は、この収容部18に開口した中空部19を介
して図示しない排気機構に連通しており、排気機
構によつて収容部18内を減圧状態にすることに
より、ウエハ6を保持するようになつている。ま
た、バキユームヘツド13には、ヒータブロツク
15上のヒータプレート20面にウエハ6が当接
する際の衝撃を緩和するためのばね21と、任意
の角度のヒータプレート20面に対してウエハ6
が完全に密着するように球面軸受22が内蔵され
ている。また、ヒータブロツク15には、ヒータ
プレート20のパルス当りの移動量と単位時間当
りのパルス数で表わされるヒータプレート20の
移動速度とを算出するロータリーエンコーダ24
が取付けられている。支持アーム14には、同様
にバキユームヘツド13の移動量と移動速度を算
出するロータリーエンコーダ25が取付けられて
いる。
Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a front view of one embodiment of the present invention, and FIG.
The figure is a side view of the same embodiment. 1 in the figure is a wafer supply and carry-out section. The wafer supply and unloading section 1 includes
A plurality of supply chucks 2 . . . and discharge chucks 3 . . . are provided. The supply chuck 2 . . . and the unloading chuck 3 . The supply chuck 2 . . . and the unloading chuck 3 .
Supply chuck 2... and unloading chuck 3...
A suction portion 7 for fixing the wafer 6 in a horizontal state is provided at the tip thereof. The suction unit 7 has an opening in its tip face that communicates with an exhaust mechanism (not shown) through the hollow parts of the supply chuck 2...the unloading chuck 3, and the exhaust mechanism reduces the pressure inside the hollow part. The wafer 6 is fixed therein.
A wafer sensor 8 and a wafer stopper 9 are provided near the suction section 7, respectively. The wafer stopper 9 is adapted to move up and down along the up-and-down movement direction of the supply chuck 2 . . . and the unloading chuck 3 . In the vicinity of the wafer supply/unloading section 1, there is a carrier elevator 1 in which wafers 6 to be processed are stored.
0 and a carrier elevator 11 in which processed wafers 6 are stored are provided so as to be movable up and down. A conveyor belt 12 is interposed between these carrier elevators 10, 11 and the supply chuck 2 and the unloading chuck 3. The carrier elevators 10 and 11 are designed to move up and down in synchronization with the up-and-down movement of the supply chuck 2 . . . , the unloading chuck 3 . A vacuum head 13 is provided above and facing the supply chuck 2 and the discharge chuck 3. Vacuum head 13 is attached to support arm 14. Support arm 14
A drive motor 23 moves over a head guide 16 installed above between the wafer supply/unloading section 1 and a heater block 15 that goes in and out of the CVD apparatus main body (not shown).
It is designed to move back and forth. An elevating cylinder 17 is attached to the support arm 14 to move the vacuum head 13 up and down between the head guide 16 and the heater block 15. As shown in FIG. 3, a mortar-shaped accommodating portion 18 is formed at the tip of the vacuum head 13 so as to hold the wafer 6 in a horizontal state. Vacuum head 1
3 communicates with an exhaust mechanism (not shown) through a hollow part 19 opened in the accommodation part 18, and the wafer 6 is held by reducing the pressure inside the accommodation part 18 by the exhaust mechanism. It's summery. Further, the vacuum head 13 includes a spring 21 for alleviating the impact when the wafer 6 comes into contact with the heater plate 20 surface on the heater block 15, and a spring 21 for relieving the impact when the wafer 6 contacts the heater plate 20 surface at an arbitrary angle.
A spherical bearing 22 is built in so that the two are in close contact with each other. The heater block 15 also includes a rotary encoder 24 that calculates the moving amount of the heater plate 20 per pulse and the moving speed of the heater plate 20 expressed in the number of pulses per unit time.
is installed. A rotary encoder 25 is attached to the support arm 14 to similarly calculate the amount and speed of movement of the vacuum head 13.

而して、このように構成されたCVD装置用ウ
エハセツター30によれば、次のようにしてウエ
ハ6をヒータブロツク15に設置し、処理後のウ
エハ6をヒータブロツク15から回収することが
できる。
According to the wafer setter 30 for a CVD apparatus configured as described above, the wafer 6 can be placed on the heater block 15 in the following manner, and the wafer 6 can be recovered from the heater block 15 after being processed.

ウエハ6を設置する場合には、先ずキヤリアエ
レベータ10が降下し、搬出されるウエハ6が所
定位置に来たところで降下を止め、搬送ベルト1
2によつて供給用チヤツク2……の吸着部7に搬
出される。これと同期してウエハストツパ9が上
昇する。ウエハ6は、ウエハストツパ9に当接し
て吸着部7の所定位置に載置されると共に、ウエ
ハセンサ8の上方を通過した際に所定の信号をキ
ヤリアエレベータ10の駆動機構に供給する。駆
動機構は、この信号を受けて再び次のウエハ6が
所定位置に現われるまで降下し、同様の操作によ
り次の供給用チヤツク2……にウエハ6を搬出す
る。全ての供給用チヤツク2……上にウエハ6が
載置されると、ウエハセンサ8の信号を受けて排
気機構は吸着部7を所定の減圧状態にする。その
結果、ウエハ6は吸着部7に吸着して固定され
る。次いで、昇降シリンダ4が駆動して供給用チ
ヤツク2……を、バキユームヘツド13の収容部
18にウエハ6が達するまで上昇させる。収容部
にウエハ6が収容されると排気機構によつてバキ
ユームヘツド13の収容部18内が所定の減圧状
態に設定されると共に、供給用チヤツク2……内
の減圧状態が解除され、ウエハ6は収容部18内
に固定される。次いで、駆動モータ23を駆動し
てバキユームヘツド13をヘツドガイド16に沿
つてヒータブロツク15の上方まで移動させる。
バキユームヘツド13がヒータブロツク15の所
定位置の上方に設定されたところで昇降シリンダ
17によりバキユームヘツド13を降下し、ヒー
タプレート20上にウエハ6を当接させ、収容部
18内の減圧状態を解除してウエハ6を載置す
る。然る後、バキユームヘツド13をヘツドガイ
ド16に戻し、駆動モータ23を逆回転させてウ
エハ供給搬出部1上にまで戻す。同様の操作を繰
り返すことによつてヒータプレート20上に所定
枚数のウエハ6を載置する。
When installing the wafer 6, the carrier elevator 10 first descends, stops descending when the wafer 6 to be unloaded reaches a predetermined position, and then the transport belt 1
2 to the suction section 7 of the supply chuck 2 . In synchronization with this, the wafer stopper 9 is raised. The wafer 6 is placed in a predetermined position on the adsorption section 7 in contact with the wafer stopper 9, and also supplies a predetermined signal to the drive mechanism of the carrier elevator 10 when passing above the wafer sensor 8. Upon receiving this signal, the drive mechanism descends again until the next wafer 6 appears at a predetermined position, and carries out the wafer 6 to the next supply chuck 2 by the same operation. When the wafers 6 are placed on all the supply chucks 2, the exhaust mechanism receives a signal from the wafer sensor 8 and brings the suction section 7 into a predetermined reduced pressure state. As a result, the wafer 6 is attracted and fixed to the attraction section 7. Next, the elevating cylinder 4 is driven to raise the supply chuck 2 until the wafer 6 reaches the storage section 18 of the vacuum head 13. When the wafer 6 is accommodated in the accommodating section, the inside of the accommodating section 18 of the vacuum head 13 is set to a predetermined reduced pressure state by the exhaust mechanism, and the reduced pressure state in the supply chuck 2 is released, and the wafer 6 is released. It is fixed within the housing section 18. Next, the drive motor 23 is driven to move the vacuum head 13 along the head guide 16 to above the heater block 15.
When the vacuum head 13 is set above the predetermined position of the heater block 15, the vacuum head 13 is lowered by the elevating cylinder 17, the wafer 6 is brought into contact with the heater plate 20, and the reduced pressure state in the housing section 18 is released to remove the wafer. Place 6. Thereafter, the vacuum head 13 is returned to the head guide 16, and the drive motor 23 is reversely rotated to return it to the top of the wafer supply/unloading section 1. By repeating similar operations, a predetermined number of wafers 6 are placed on the heater plate 20.

このようにして多枚数のウエハ6が載置された
ヒータブロツク15はCVD装置内に挿入され、
ウエハ6の表面に所定のCVD膜が形成される。
The heater block 15 on which a large number of wafers 6 are placed in this manner is inserted into the CVD apparatus, and
A predetermined CVD film is formed on the surface of the wafer 6.

次に、CVD装置から引き出されたヒータブロ
ツク15上の処理後のウエハ6を回収する操作に
ついて説明する。まず、駆動モータ23によつて
ヘツドガイド16に沿つてバキユームヘツド13
が処理後のウエハ6の上方まで移動する。次い
で、昇降シリンダ17によつてヘツドガイド16
が降下し、ウエハ6が収容部18内に収容された
ところで降下を停止する。次いで、排気機構によ
つて収容部18内が減圧状態に設定され、ウエハ
6が収容部18に固定される。次に、収容部18
にウエハ6を固定した状態でバキユームヘツド1
3がヘツドガイド16まで上昇し、駆動モータ2
3の逆回転によつてウエハ供給搬出部1の搬出用
チヤツク3……の上方まで戻る。このバキユーム
ヘツド13に保持されたウエハ6に吸着部7が当
接するまで昇降シリンダ4によつて搬出用チヤツ
ク3……が上昇する。次いで、バキユームヘツド
13の減圧状態が解除されると共に、搬出用チヤ
ツク3の方が減圧状態に設定され、ウエハ6は、
バキユームヘツド13から搬出用チヤツク3に移
される。次に、搬出用チヤツク3……が降下し、
所定位置に達したところで搬送ベルト12が駆動
すると共に、搬出用チヤツク3……内の減圧状態
が解除されてウエハ6は搬送ベルト12によりキ
ヤリアエレベータ11に搬出される。
Next, the operation of recovering the processed wafer 6 on the heater block 15 pulled out from the CVD apparatus will be explained. First, the vacuum head 13 is moved along the head guide 16 by the drive motor 23.
moves above the processed wafer 6. Next, the head guide 16 is moved by the lifting cylinder 17.
is lowered, and the lowering is stopped when the wafer 6 is housed in the housing section 18. Next, the inside of the storage section 18 is set to a reduced pressure state by the exhaust mechanism, and the wafer 6 is fixed in the storage section 18 . Next, the housing section 18
With the wafer 6 fixed on the vacuum head 1
3 rises to the head guide 16, and the drive motor 2
3 returns to above the unloading chuck 3 of the wafer supplying and unloading section 1. The unloading chuck 3 is raised by the elevating cylinder 4 until the suction portion 7 comes into contact with the wafer 6 held by the vacuum head 13. Next, the reduced pressure state of the vacuum head 13 is released, and the unloading chuck 3 is set to a reduced pressure state, and the wafer 6 is
It is transferred from the vacuum head 13 to the unloading chuck 3. Next, the unloading chuck 3... is lowered,
When the wafer 6 reaches a predetermined position, the conveyor belt 12 is driven, the reduced pressure inside the unloading chuck 3 is released, and the wafer 6 is conveyed to the carrier elevator 11 by the conveyor belt 12.

なお、バキユームヘツド13及び供給用チヤツ
ク2……、搬出用チヤツク3……の動作は、ロー
タリーエンコーダ24,25の指令によつて行わ
れ、各々同期をとりながら例えばバキユームヘツ
ド13の昇降動作と両チヤツク2,3……の動作
は同時にも行われることは勿論である。
The vacuum head 13, the supply chuck 2, the unloading chuck 3, etc. are operated in accordance with the commands from the rotary encoders 24, 25. For example, the vacuum head 13 is raised and lowered and both chucks 2 are operated in synchronization with each other. , 3... are of course performed at the same time.

このようにこのCVD装置用ウエハセツター3
0は、次の効果を有する。
In this way, this wafer setter 3 for CVD equipment
0 has the following effect.

バキユームヘツド13の移動量等をロータリ
ーエンコーダ24,25の指分によつてパルス
信号として制御できるので、ウエハ6の移動量
を正確に設定して作業性を向上できる。
Since the amount of movement of the vacuum head 13 and the like can be controlled as pulse signals by the indications of the rotary encoders 24 and 25, the amount of movement of the wafer 6 can be set accurately and work efficiency can be improved.

このロータリーエンコーダ24,25と小型
コンピユータとの併用により、バキユームヘツ
ド13及び供給用チヤツク2……、搬出用チヤ
ツク3……の操作を正確に同期して行うことが
できる。
By using the rotary encoders 24, 25 together with a small computer, the vacuum head 13, the supply chuck 2, the unloading chuck 3, etc. can be operated in accurate synchronization.

バキユームヘツド13及び供給用チヤツク2
……、搬出用チヤツク3……は、ウエハ6の表
面を局所的に直接把持しないので、処理前後の
ウエハ6の表面に損傷が発生するのを防止でき
る。
Vacuum head 13 and supply chuck 2
Since the unloading chuck 3 does not locally directly grip the surface of the wafer 6, it is possible to prevent damage to the surface of the wafer 6 before and after processing.

ウエハ6の処理前後の搬送操作を全て自動化
して作業性を向上できる。
All the transport operations before and after processing the wafer 6 can be automated to improve work efficiency.

ウエハ供給搬出部1に設けたウエハストツパ
9によりウエハ6の位置決めを高精度で行い作
業性を向上できる。
The wafer stopper 9 provided in the wafer supply/unloading section 1 allows the wafer 6 to be positioned with high precision, thereby improving work efficiency.

バキユームヘツド13内に内蔵されたばね2
1により、ウエハ6とヒータプレート20との
接触強さを小さくすると共に、球面軸受22に
よりウエハ6を任意の傾斜角のヒータプレート
20面に倣つて密着させることができるので、
ウエハ6をヒータプレート20に着脱する際に
損傷が生じるのを防止できる。
Spring 2 built into vacuum head 13
1, the contact strength between the wafer 6 and the heater plate 20 can be reduced, and the spherical bearing 22 can bring the wafer 6 into close contact with the surface of the heater plate 20 having an arbitrary inclination angle.
Damage to the wafer 6 when it is attached to and removed from the heater plate 20 can be prevented.

〔発明の効果〕〔Effect of the invention〕

本発明に係るCVD装置用ウエハセツターによ
れば、薄膜形成処理の前後でウエハの表面に損傷
が発生するのを防止し、かつ、ウエハの移送操作
を自動化して作業性を著しく向上させることがで
きる等顕著な効果を奏するものである。
According to the wafer setter for CVD equipment according to the present invention, it is possible to prevent damage to the wafer surface before and after the thin film forming process, and to automate the wafer transfer operation, thereby significantly improving work efficiency. It has a remarkable effect.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例の正面図、第2図
は、同実施例の側面図、第3図は、同実施例のバ
キユームヘツドの断面図である。 1……ウエハ供給搬出部、2……供給用チヤツ
ク、3……搬出用チヤツク、4……昇降シリン
ダ、5……基台、6……ウエハ、7……吸着部、
8……ウエハセンサ、9……ウエハストツパ、1
0,11……キヤリアエレベータ、12……搬送
ヘツド、13……バキユームヘツド、14……支
持アーム、15……ヒータブロツク、16……ヘ
ツドガイド、17……昇降シリンダ、18……収
容部、19……中空部、20……ヒータプレー
ト、21……ばね、22……球面軸受、23……
駆動モータ、24,25……ロータリーエンコー
ダ、30……CVD装置用ウエハセツター。
FIG. 1 is a front view of one embodiment of the present invention, FIG. 2 is a side view of the same embodiment, and FIG. 3 is a sectional view of the vacuum head of the same embodiment. DESCRIPTION OF SYMBOLS 1... Wafer supply/unloading part, 2... Supply chuck, 3... Unloading chuck, 4... Lifting cylinder, 5... Base, 6... Wafer, 7... Adsorption unit,
8...Wafer sensor, 9...Wafer stopper, 1
0, 11...Carrier elevator, 12...Transportation head, 13...Vacuum head, 14...Support arm, 15...Heater block, 16...Head guide, 17...Elevating cylinder, 18...Accommodating section, 19 ... Hollow part, 20 ... Heater plate, 21 ... Spring, 22 ... Spherical bearing, 23 ...
Drive motor, 24, 25... rotary encoder, 30 ... wafer setter for CVD equipment.

Claims (1)

【特許請求の範囲】[Claims] 1 ウエハが載置されるヒータブロツクの上方か
らウエハ供給搬出部の上方に架設されたヘツドガ
イドと、該ヘツドガイドに移動自在に取付けられ
たバキユームヘツドと、該バキユームヘツドを前
記ヘツドガイドと前記ヒータブロツク間で昇降せ
しめる昇降機構と、該バキユームヘツドに前記ウ
エハを水平状態で収容するように形成されたすり
鉢状の収容部と、前記ウエハ供給搬出部に該収容
部と対向して昇降自在に設けられた供給用チヤツ
ク及び該供給用チヤツクより前記ヒータブロツク
に近接して設けられた搬出用チヤツクと、該供給
用チヤツク及び該搬出用チヤツクに前記ウエハを
水平状態で固定するように形成された吸着部と、
該供給用チヤツクに前記ウエハを供給し、かつ、
該搬出用チヤツクから前記ウエハを搬出するウエ
ハ移送手段とを具備することを特徴とするCVD
装置用ウエハセツター。
1. A head guide installed from above the heater block on which the wafer is placed to above the wafer supply/unloading section, a vacuum head movably attached to the head guide, and a vacuum head installed between the head guide and the heater block. a lifting mechanism for raising and lowering the wafer; a mortar-shaped storage section formed in the vacuum head to store the wafer in a horizontal state; and a supply provided in the wafer supply/unloading section so as to be movable up and down, facing the storage section. an unloading chuck and an unloading chuck provided closer to the heater block than the supply chuck, and a suction portion formed to horizontally fix the wafer to the supply chuck and the unloading chuck;
supplying the wafer to the supply chuck, and
A CVD characterized by comprising a wafer transfer means for carrying out the wafer from the carrying chuck.
Wafer setter for equipment.
JP2851982A 1982-02-24 1982-02-24 Wafer setter for cvd apparatus Granted JPS58147039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2851982A JPS58147039A (en) 1982-02-24 1982-02-24 Wafer setter for cvd apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2851982A JPS58147039A (en) 1982-02-24 1982-02-24 Wafer setter for cvd apparatus

Publications (2)

Publication Number Publication Date
JPS58147039A JPS58147039A (en) 1983-09-01
JPS6262463B2 true JPS6262463B2 (en) 1987-12-26

Family

ID=12250924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2851982A Granted JPS58147039A (en) 1982-02-24 1982-02-24 Wafer setter for cvd apparatus

Country Status (1)

Country Link
JP (1) JPS58147039A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211746A (en) * 1981-06-23 1982-12-25 Fujitsu Ltd Wafer conveying apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211746A (en) * 1981-06-23 1982-12-25 Fujitsu Ltd Wafer conveying apparatus

Also Published As

Publication number Publication date
JPS58147039A (en) 1983-09-01

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