JPS6260863A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPS6260863A JPS6260863A JP19773285A JP19773285A JPS6260863A JP S6260863 A JPS6260863 A JP S6260863A JP 19773285 A JP19773285 A JP 19773285A JP 19773285 A JP19773285 A JP 19773285A JP S6260863 A JPS6260863 A JP S6260863A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- film
- undercoat
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はスパッタリング工程で使用するターゲットの改
良に関するもので、１回のスパッタリング工程で基板に
多層膜の形成が可能なスパッタリング用ターゲットを提
供せんとするものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to improvement of a target used in a sputtering process, and provides a sputtering target that can form a multilayer film on a substrate in a single sputtering process. That is.
（従来の技術とその欠点）
スパッタリング法で基板の表面に金属又は非金属材料の
′Ａヶ膜を形成させる作業において、基板と膜材料の線
膨張係数に大きな差がある場合は形成した膜の密着力は
弱いものとなる。(Prior art and its disadvantages) When forming a film of metal or non-metallic material on the surface of a substrate by sputtering, if there is a large difference in linear expansion coefficient between the substrate and the film material, the formed film may Adhesion will be weak.
この改善策として従来から、両者の中間的な線膨張係数
を持つ膜をアンダコートする方法がとられているが、従
来のアンダ−コート材、本来目標とする膜の形成の一連
の作業ＫＦｉ次のような欠点がある。Conventionally, a method to improve this problem has been to undercoat a film with a coefficient of linear expansion intermediate between the two. There are drawbacks such as.
（１） ターゲットを交換してスパッタリングする方
法。(1) A method of sputtering by replacing the target.
この方法は、スパッタリング装置に先ずアンダコート用
ターゲットを取付けてスパッタリングを行い、基板面に
アングコート膜を形成させた後、ターゲットを本来、目
標とする膜用のものに取替え、再びスパッタリングする
方法である。In this method, an undercoat target is first attached to the sputtering equipment and sputtering is performed to form an undercoat film on the substrate surface, and then the target is replaced with the target for the target film and sputtering is performed again. be.
この方法には次の欠点がある。This method has the following drawbacks.
１）スパッタリングは、アルゴンガス等の不活性ガス雰
囲気中で１０４〜１ （１” Ｔｏｒｒ の真空中に
おいてグロー放電を発生させて行なうものであるために
１ターゲツト交換の、たびに真空破壊、ターゲット取替
、再度Ａ空引き等の作業が必要となシ生産性が悪い。1) Sputtering is performed by generating glow discharge in a vacuum of 104 to 1 Torr in an inert gas atmosphere such as argon gas, so it is necessary to break the vacuum and remove the target every time one target is replaced. Productivity is poor as it requires work such as replacement and re-drawing of A.
２）上記作業において、形成したアンダコート膜の汚損
や表面の活性度の低下が起こυ、この上に形成される膜
との密着力が悪くなる０
（２） スパッタリング槽の数を増やし、連続的にス
パッタリングを行なう方法。2) In the above operation, the formed undercoat film may be contaminated and the surface activity may be reduced, resulting in poor adhesion with the film formed on top of it. (2) Increase the number of sputtering baths and A method of sputtering.
この方法は、アンダコート用ターゲットを取付けたスパ
ッタリング槽と本来、目標とする膜用ターゲットを取付
けたスパッタリング槽を接続し、基板を両者の槽中で移
動させて−蓮のスパッタリングを行なう方法で、１）に
示したターゲットの交換作業は不用になるが装置が大型
になり機構も複雑なものとなる。In this method, a sputtering bath with an undercoat target attached is connected to a sputtering bath with a film target attached thereto, and the substrate is moved between both baths to perform lotus sputtering. Although the target replacement work shown in 1) becomes unnecessary, the device becomes larger and the mechanism becomes more complicated.
着た、基板及びターゲットの形状が平板状の場合はこの
方法も可能であるがチューブの内面にスパッタリング膜
を形成させる場合には不適当である。Although this method is possible when the substrate and target are plate-shaped, it is not suitable for forming a sputtering film on the inner surface of a tube.
（発明が解決しようとする問題点）
本発明は上記従来法の欠点を解消し、１回のスパッタリ
ング工程で、基板に多層膜の形成が可能なターゲットを
半？供しようとするものである。(Problems to be Solved by the Invention) The present invention solves the drawbacks of the above-mentioned conventional methods, and makes it possible to create a target that can form a multilayer film on a substrate in a single sputtering process. This is what we are trying to provide.
（問題点を解決するための手段）
本発明は本来目標とする膜材料からなるスパッタリング
用ターゲットの表面に異なるアンダーコート材をコーテ
ィングしてなることを特徴とするスパッタリング用ター
ゲットである。(Means for Solving the Problems) The present invention is a sputtering target characterized in that the surface of the sputtering target made of a target film material is coated with a different undercoat material.
本発明のターゲットはターゲット（本来目標とする膜形
成用材料）の表面にアンダ−コート材料をメッキ、溶射
その他の方法で付着させたもので、複合ターゲットとも
云える構造のものである。The target of the present invention has an undercoat material adhered to the surface of the target (original target film forming material) by plating, thermal spraying, or other methods, and has a structure that can be called a composite target.
そして、本発明のスパッタリング用ターゲットには下記
のような効果を奏しうる。The sputtering target of the present invention can have the following effects.
＋１１ このターゲットを用いてスパッタリングを行
なえば基板面に１アンダコート膜と本来目標とする膜が
１回のスパッタリングで連続的に形成させることが可能
である。+11 If sputtering is performed using this target, it is possible to continuously form one undercoat film and the originally targeted film on the substrate surface by one sputtering.
（２） ターゲット表面に付着させるアンダ−コー材
料の付着厚さを変えることにより基板面で形成するアン
ダコート膜厚を任意にコントロールできる。(2) By changing the thickness of the undercoat material deposited on the target surface, the thickness of the undercoat film formed on the substrate surface can be arbitrarily controlled.
（３） ターゲット表面の付着材料を異なる材料で多
層化することにより、１回のスパッタリング操作で基板
面に多層スパッタリング膜を形成させることができる。(3) By multilayering different materials to adhere to the target surface, a multilayer sputtered film can be formed on the substrate surface in one sputtering operation.
（４） このターゲットは、管内面へのスパッタリン
グ作業のように基板（管）をスパッタリング槽内で移動
させにくいものに特に適している。(4) This target is particularly suitable for sputtering operations on the inner surface of a tube, where it is difficult to move the substrate (tube) within the sputtering tank.
以下、本発明を添付図面に従って詳述する。Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
第１図、第２図はいずれもこの目的のために試作したタ
ーゲットである。第１図は、伝熱管など円筒の内面にス
パッタリング膜を形成させるためのものであり、第１図
（ａ）はその縦断面図、第１図（ｂ）は第１図（ａ）の
ムーム′断面図である。又、第２図は、平板の表面に対
して使用するものであり、第２図（ａ）はその平面図、
第２図（ｂ）は側面図である。図において１け、本来目
標とするスパッタリング膜用の材質からなっており、２
はその表面に所定膜厚にコーティングされたアンダコー
ト用材質である。Both FIG. 1 and FIG. 2 are targets prototyped for this purpose. Figure 1 shows a sputtering film for forming a sputtering film on the inner surface of a cylinder such as a heat transfer tube. 'It is a sectional view. In addition, Fig. 2 is used for the surface of a flat plate, and Fig. 2 (a) is a plan view thereof.
FIG. 2(b) is a side view. In the figure, the number 1 is made of the material for the sputtering film that is originally the target, and the number 2
is an undercoat material coated on the surface to a predetermined thickness.
第５図は、＠１図の試作ターゲットを用いて管内面への
スパッタリングを行なう場合の説明図である。図におい
て、３は被コーテイング管（基板）で、この管端に、絶
縁物４を介して本来目標とするスパッタリング膜用材質
（例えばム＋ｘＡｇ）１０表面にアンダコート用材質（
例えばＮ１）２を所定厚さにコーティングした本発明に
よるターゲットを取りつける。その後、真空ポンプ５に
て管内を排気し、充分真空度を高めた後さらにアルゴン
ガスボンベ６からムｒ を注入し、管内を所定圧力に保
持する。FIG. 5 is an explanatory diagram when sputtering is performed on the inner surface of a tube using the prototype target shown in FIG. In the figure, reference numeral 3 denotes a tube to be coated (substrate), and an undercoat material (substrate) is applied to the surface of the target sputtering film material (for example, Mu+xAg) 10 through an insulator 4 at the end of the tube.
For example, a target according to the present invention coated with N1)2 to a predetermined thickness is attached. Thereafter, the inside of the tube is evacuated using the vacuum pump 5, and after the degree of vacuum is sufficiently increased, MR2 is further injected from the argon gas cylinder 6 to maintain the inside of the tube at a predetermined pressure.
次に、直流又は高周波電源装置〃７を用い基材３を■に
、ターゲット１をｏＶＣｔ、て電圧、電流を加えてスパ
ッタリングを行なう。Next, sputtering is performed by applying voltage and current to the base material 3 and the target 1 using a DC or high frequency power supply device 7.
スパッタリングが始まると、先ずターゲット表面のアン
ダ−コ材料２がスパッタリングされて基材（管内面側）
に所定厚さのアンダコート膜が形成され、次いで、本来
目標とする材料からなるターゲット１がスパッタリング
されて基材面ではアンダコート膜の上層に本来目標とす
る膜が連続的に形成されるのである。When sputtering begins, the undercoat material 2 on the target surface is sputtered to form the base material (inner surface side of the tube).
An undercoat film of a predetermined thickness is formed on the substrate, and then a target 1 made of the target material is sputtered to continuously form the target film on top of the undercoat film on the base material surface. be.
上記方法により形成したスパッタリング膜の断面膜弐図
を第４図に示した。即ち、１回のスパッタリング操作で
、アンダコート膜２′と本来目標とする膜１′が連続的
に形成させることが可能になったといった生産面の利点
のほかに、連続的に膜の形成が行なわれた結果、輝２′
と１′の境界部で相互噴込み効果が生じ、密着性のよい
多層膜を形成させることができた。A cross-sectional view of the sputtered film formed by the above method is shown in FIG. In other words, in addition to the production advantage that it is now possible to continuously form the undercoat film 2' and the originally targeted film 1' in a single sputtering operation, it is also possible to form the film continuously. As a result of what was done, brilliance 2'
A mutual injection effect occurred at the boundary between 1 and 1', and a multilayer film with good adhesion could be formed.
第１図、第２図は本発明のスパッタリング用ターゲット
との実施態様を示す図、第３図は第１図のスパッタリン
グ用ターゲットの使用態様を示す図、第４図は第３図使
用態様でスパッタリングされた管内面の様子を示す図で
ある。
復代理人 内 １） 明
復代理人 萩 原 亮 −
復代理人 安 西 篤 夫
く−
箆３図
第４図Figures 1 and 2 are diagrams showing an embodiment of the sputtering target of the present invention, Figure 3 is a diagram showing how the sputtering target of Figure 1 is used, and Figure 4 is a diagram showing how the sputtering target of the present invention is used. FIG. 3 is a diagram showing the inner surface of the tube after sputtering. Sub-Agents 1) Meifuku Agent Ryo Hagiwara - Sub-Agent Atsushi Anzai - Figure 3 Figure 4
Claims (1)
ットの表面に異なるアンダーコート材をコーティングし
てなることを特徴とするスパッタリング用ターゲット。A sputtering target characterized by coating the surface of a sputtering target made of a target film material with a different undercoat material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19773285A JPS6260863A (en) | 1985-09-09 | 1985-09-09 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19773285A JPS6260863A (en) | 1985-09-09 | 1985-09-09 | Target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6260863A true JPS6260863A (en) | 1987-03-17 |
Family
ID=16379418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19773285A Pending JPS6260863A (en) | 1985-09-09 | 1985-09-09 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6260863A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997050108A1 (en) * | 1996-06-27 | 1997-12-31 | Erbsloeh Hermann Walter | Aluminium cast part, and process for the production thereof |
| EP1111086A1 (en) * | 1999-12-20 | 2001-06-27 | United Technologies Corporation | Cathode and method for making cathode for cathodic arc deposition |
-
1985
- 1985-09-09 JP JP19773285A patent/JPS6260863A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997050108A1 (en) * | 1996-06-27 | 1997-12-31 | Erbsloeh Hermann Walter | Aluminium cast part, and process for the production thereof |
| EP0817238A1 (en) * | 1996-06-27 | 1998-01-07 | VAW motor GmbH | Aluminium cast part and method for its fabrication |
| EP1111086A1 (en) * | 1999-12-20 | 2001-06-27 | United Technologies Corporation | Cathode and method for making cathode for cathodic arc deposition |
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