JPS6259963A - Electrophotographic sensitive material - Google Patents

Electrophotographic sensitive material

Info

Publication number
JPS6259963A
JPS6259963A JP20033285A JP20033285A JPS6259963A JP S6259963 A JPS6259963 A JP S6259963A JP 20033285 A JP20033285 A JP 20033285A JP 20033285 A JP20033285 A JP 20033285A JP S6259963 A JPS6259963 A JP S6259963A
Authority
JP
Japan
Prior art keywords
compound
electrophotographic
substituted
pyrylium
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20033285A
Other languages
Japanese (ja)
Other versions
JPH0513514B2 (en
Inventor
Katsushi Kitatani
克司 北谷
Kenji Sano
佐野 健次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP20033285A priority Critical patent/JPS6259963A/en
Priority to US06/903,918 priority patent/US4663260A/en
Priority to DE3630389A priority patent/DE3630389C2/en
Publication of JPS6259963A publication Critical patent/JPS6259963A/en
Publication of JPH0513514B2 publication Critical patent/JPH0513514B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0664Dyes
    • G03G5/0666Dyes containing a methine or polymethine group
    • G03G5/0668Dyes containing a methine or polymethine group containing only one methine or polymethine group
    • G03G5/067Dyes containing a methine or polymethine group containing only one methine or polymethine group containing hetero rings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/05Organic bonding materials; Methods for coating a substrate with a photoconductive layer; Inert supplements for use in photoconductive layers
    • G03G5/0503Inert supplements
    • G03G5/051Organic non-macromolecular compounds
    • G03G5/0514Organic non-macromolecular compounds not comprising cyclic groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/05Organic bonding materials; Methods for coating a substrate with a photoconductive layer; Inert supplements for use in photoconductive layers
    • G03G5/0503Inert supplements
    • G03G5/051Organic non-macromolecular compounds
    • G03G5/0521Organic non-macromolecular compounds comprising one or more heterocyclic groups

Abstract

PURPOSE:To provide the higher sensitivity in a semiconductor laser region by incorporating a specific org. pyrylium compd. into the titled material. CONSTITUTION:The pyrylium compd. expressed by the formula (R3 is H, halogen atom, (un)substd. alkyl, (un)substd. aryl, R1, R2, R4, R5 ar synonymous with R3 except halogen atom, H halogen atom, alkyl and aryl of R1-R5 may be respectively the same or different, X is an anion) is incorporated together with an org. photoconductive material into the photosensitive layer. Such pyrylium is added at about 0.01-10% by weight of the org. photoconductive material, for example, phenylene diamine deriv. etc. The sensitivity of the photosensitive body is thereby improved and the durability good against heat and humidity is thus obtd. The photosensitive body having the high sensitivity particularly in the wavelength region of a semiconductor laser is obtd.

Description

【発明の詳細な説明】 「産業上の利用分野」 本発明は有機光導電性物質を主体とした高感度な電子写
真感光材料、特に半導体レーザーの波長領域において高
感度金示す電子写真感光材料に関する。
Detailed Description of the Invention "Field of Industrial Application" The present invention relates to a highly sensitive electrophotographic material mainly composed of an organic photoconductive substance, particularly an electrophotographic material exhibiting high sensitivity in the wavelength region of a semiconductor laser. .

「従来の技術」 近年半導体レーザーを光源とした電子写真システムが盛
んに開発されている。半導体レーザーは)ie−Ne等
のガスレーザーに比べて小型かつ低コストであり、直接
変調が可能なこと等大きな利点を有しているが、発振波
長が7 jOnm以上となることが多かった。従ってこ
のシステムに用いる感光体は7!Onm以上に吸収を持
ち、高感度を示す必要があり、各種の増感染料等の開発
が行われている。ところが一般にこのような長波長域に
吸収を持つ有機化合物は熱や湿度に対して不安定なもの
が多く、製造上、取り扱い上問題があり、さらにはそれ
らを用いて作製した感光材料は経時変化が著しく、長期
間保存すると感光体としての機能金欠ってしまうものが
多かった。
"Prior Art" In recent years, electrophotographic systems using semiconductor lasers as light sources have been actively developed. Semiconductor lasers have great advantages such as being smaller and cheaper than gas lasers such as ie-Ne and being able to be directly modulated, but their oscillation wavelength is often 7 j Onm or more. Therefore, the number of photoreceptors used in this system is 7! It is necessary to have an absorption of Onm or higher and to exhibit high sensitivity, and various sensitizing agents are being developed. However, organic compounds that absorb in the long wavelength range are generally unstable with respect to heat and humidity, causing problems in manufacturing and handling, and furthermore, photosensitive materials made using them tend to deteriorate over time. There were many cases where the photoconductor's functional properties were lost when stored for a long period of time.

またこのような波長域に主吸収を持っていても吸光係数
が小さかったり、低い電子写真感度しか示さないものも
あり、現状は必ずしも満足すべき状態ではなく、さらに
高感度、高耐久性を示す電子写真感光体の開発が望まれ
ている。
In addition, even if the main absorption is in this wavelength range, there are some that have small extinction coefficients or only exhibit low electrophotographic sensitivity, so the current situation is not necessarily satisfactory, and even higher sensitivity and higher durability are required. The development of electrophotographic photoreceptors is desired.

「発明が解決しようとする問題点」 本発明の第一の目的は有機光導電性物質とピリリウム化
合物を含み、高い感度を有する電子写真感光材料を提供
することにある。
"Problems to be Solved by the Invention" A first object of the present invention is to provide an electrophotographic material containing an organic photoconductive substance and a pyrylium compound and having high sensitivity.

本発明の第二の目的は熱や湿度に対して耐久性のある電
子写真感光材料を提供することにある。
A second object of the present invention is to provide an electrophotographic photosensitive material that is durable against heat and humidity.

本発明の第三の目的は半導体レーザーの発振波長領域に
主吸収全有し、高感度を示す電子写真感光材料金提供す
ることにある。
A third object of the present invention is to provide an electrophotographic photosensitive material having all of its main absorption in the oscillation wavelength region of a semiconductor laser and exhibiting high sensitivity.

「問題点全解決するための手段」 即ち本発明者らは鋭意研究の結果下記一般式(I)で示
される化合物を少くとも一徨含有した電子写真感光材料
を作製することにより上記問題点全解決することができ
た。
``Means for solving all the problems'' That is, as a result of intensive research, the present inventors have solved all the above problems by producing an electrophotographic light-sensitive material containing at least one compound represented by the following general formula (I). I was able to solve it.

一般式(I) 式中、R1、R2、R4、R5は水素原子、置換もしく
は未置換のアルキル基、置換もしくは未置換のアリール
基を示し、R3は水素原子、ノ・ロゲン原子、置換もし
くは未置換のアルキル基、置換もしくは未置換のアリー
ル基金示す。R工、几2、几3、ル4、R5の水素原子
、アリール基はそれぞれ同じものでも異っていてもよい
。Xはアニオンを示す。
General formula (I) In the formula, R1, R2, R4, R5 represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, and R3 represents a hydrogen atom, a substituted or unsubstituted aryl group, and R3 represents a hydrogen atom, a substituted or unsubstituted alkyl group, and a substituted or unsubstituted aryl group. Indicates a substituted alkyl group, a substituted or unsubstituted aryl group. The hydrogen atoms and aryl groups of R, 2, 3, 4, and R5 may be the same or different. X represents an anion.

なお、凡1、R12、几8、几4、几、の好ましいアル
キル基は、炭素原子数/〜it個のアルキル基であり、
具体的にはメチル、エチル、n−プロピル、1so−プ
ロピル、n−ブチル、5ec−ブチル、tart−ブチ
ル、n−アミル、n−ヘキシル、ローヘフチル、n−/
ニル、n−)”7’シル、2−エチルヘキシル、フルオ
ロメチル、クロロメチル、ブロモメチル、トリフルオロ
メチル、メトキシメチル、シアノメチル、アルギルチオ
メチル等が挙げられる。
In addition, the preferable alkyl group of 1, R12, 几8, 几4, 几 is an alkyl group having carbon atoms/~it number,
Specifically, methyl, ethyl, n-propyl, 1so-propyl, n-butyl, 5ec-butyl, tart-butyl, n-amyl, n-hexyl, rhohefthyl, n-/
Nyl, n-)''7' syl, 2-ethylhexyl, fluoromethyl, chloromethyl, bromomethyl, trifluoromethyl, methoxymethyl, cyanomethyl, argylthiomethyl and the like.

また好ましいアリール基は、炭素原子数t−21個まで
のアリール基であり、具体的にはフェニル、トリル、ク
ロロフェニル、フルオロフェニル、ナフチル等が挙げら
れる。
Preferred aryl groups are those having up to t-21 carbon atoms, and specific examples include phenyl, tolyl, chlorophenyl, fluorophenyl, naphthyl, and the like.

またXのアニオンの具体例としては、R−クロレート、
テトラフルオロボレート、アイオダイド、クロライド、
プロミド、サルフェート、パーアイオダイド、p−)ル
エンスルホネート等が挙げられる。
Specific examples of the anion of X include R-chlorate,
Tetrafluoroborate, iodide, chloride,
Examples include bromide, sulfate, periodide, p-)luenesulfonate, and the like.

本発明に用いる化合物において、一方のピIJ IJウ
ム環に導入されているter t−ブチル基(以下、t
ert−Bu基で記す)は化合物の安定性全向上させか
つ溶解性を向上させる役割を荷っている。もう一方のビ
リリウム環に導入されているフェニル基(以下、2−基
で記す)は主吸収全7rOnm付近へ設定するためのも
のである。
In the compound used in the present invention, a ter t-butyl group (hereinafter referred to as t
(denoted as ert-Bu group) plays the role of improving the overall stability and solubility of the compound. The phenyl group (hereinafter referred to as 2-group) introduced into the other biryllium ring is for setting the total main absorption to around 7rOnm.

R,−1−L、は吸収極大波長を所望に応じて微調整す
る役割金持つ。
R and -1-L play a role in finely adjusting the absorption maximum wavelength as desired.

次に一般式(I)で示される本発明に用いる化金物の代
表例を下記に示すが本発明はこれに:つて限定されるも
のではない。
Next, typical examples of the metal compound represented by the general formula (I) used in the present invention are shown below, but the present invention is not limited thereto.

化合物−(I) 化合物−に) α、e 化合物−(3) αQe 化合物−(4) CIU、” 化合物−(5) C1,o40 化合物−(6) F4e 化合物−(7) α04G 化合物−(8) α04e 化合物−(9) 化合物−(I0) α(,14e 化合物−(I1) Cl(J4e 化合物−(I2) α04e 化合物−(I3) α04e 化合物−(I4) の04e 化合物−(I5) Ct(J e 化合物−(I6) PU e 本発明に使用するビIJ リウ系化合物は有機光導電体
が増感されるitf用いるのであって、その量は有機光
導電体の種類により異なるが概して、有機光導電体に対
1−でit比でo、oiチから100チ、好ましくは0
.7%から30チの範囲でろる。
Compound-(I) Compound-) α,e Compound-(3) αQe Compound-(4) CIU,” Compound-(5) C1,o40 Compound-(6) F4e Compound-(7) α04G Compound-(8 ) α04e Compound-(9) Compound-(I0) α(,14e Compound-(I1) Cl(J4e Compound-(I2) α04e Compound-(I3) α04e Compound-(I4) 04e Compound-(I5) Ct( J e compound - (I6) PU e The bi-IJ liu compound used in the present invention is used to sensitize the organic photoconductor, and the amount varies depending on the type of organic photoconductor, but in general, The photoconductor has an it ratio of 1 to 100, preferably 0.
.. It ranges from 7% to 30chi.

本発明に用いるピリリウム化合物は、例えばユ。Examples of the pyrylium compound used in the present invention include Y.

2−ジーtert−ブチルーμmメチルピリリウム塩を
、等モルのl−アニリノ−3−7エニルイミノゾロベン
と反応させた後、さらに等モルのコ。
The 2-di-tert-butyl-[mu]m methylpyrylium salt is reacted with an equimolar amount of l-anilino-3-7enyliminozoloben, followed by a further equimolar co-coat.

乙−ジフェニル−弘−メチルピリリウム塩と反応させる
ことによって得られる。この反応は第一段階は無水酢酸
中で第二段階は無水酢酸す) IJウム等の塩基存在下
に無水酢酸中で行うことが望ましい。第一段階目の反応
において無水酢酸の量はコ。
Obtained by reacting with Otsu-diphenyl-Hiro-methylpyrylium salt. This reaction is preferably carried out in acetic anhydride in the presence of a base such as IJum (the first step is acetic anhydride and the second step is acetic anhydride). The amount of acetic anhydride in the first step reaction is .

t−ジーtert−ブチルー≠−メチルピリリウム塩/
2に対し/〜コ0露t1好ましくは2〜i。
t-tert-butyl≠-methylpyrylium salt/
For 2/~ko0 dew t1 preferably 2~i.

11tである。反応温度は!Q°から還流温度までで行
われるがloo’c前後が好ましい。反応時間は7分か
ら1時間であるが、好ましくは70分から30分である
。第二段階目の反応を行うに先立って中間体を単離する
ことも可能である。中間体の単離は第一段階目の反応混
合物全エーテル等の、中間体の貧溶媒となる有機溶媒で
希釈し、中間体を晶析させればよい。第二段階目の反応
において無水酢酸ナトリウムの量はコ、6−ジフェニル
ーl−メチルピリリクム塩1モルに対して2〜3モル相
当量用いるのが好ましい。反応時間、反応温度は第一段
階の条件と同様である。
It is 11t. What is the reaction temperature? It is carried out from Q° to reflux temperature, preferably around loo'c. The reaction time is 7 minutes to 1 hour, preferably 70 minutes to 30 minutes. It is also possible to isolate the intermediate prior to carrying out the second step reaction. The intermediate can be isolated by diluting the first-stage reaction mixture with an organic solvent such as total ether, which is a poor solvent for the intermediate, and crystallizing the intermediate. In the second stage reaction, it is preferable to use anhydrous sodium acetate in an amount equivalent to 2 to 3 moles per mole of co,6-diphenyl-l-methylpyrillicum salt. The reaction time and reaction temperature are the same as those in the first stage.

次に合成例に−より本発明に用いるピリリウム化合物の
代表的々合成方法を示す。なお、λ、乙−ジーtert
−ブチルー≠−メチルピリリウム塩、コツt−ジフェニ
ル−μmメチルピリリウム塩はリービッヒ アナーレン
 デア ヘミエ(Liebigs  Annalen 
 der  Chemie )62!、7≠(I517
P)K記載されている方法によって合成した。
Next, typical methods for synthesizing pyrylium compounds used in the present invention will be shown using synthesis examples. In addition, λ,
-Butyl≠-methylpyrylium salt, t-diphenyl-μm methylpyrylium salt is available from Liebigs Annalen der Hemie (Liebigs Annalen der Hemie).
der Chemie ) 62! , 7≠(I517
P)K Synthesized by the method described.

合成列−1(化合物−(I)の合成) コ、フージーtert−ブチル−≠−メチルピリリウム
バークロレート(J、07f、0,0/mol)、/−
アニリノ−3−フェニルイミノプロペン(j 、 22
f!、0.0/mol)fよく混合し、無水酢酸j m
l f加えた。混合物ft10o0Cに加熱した後10
分間攪拌し、ついでλ、t−ジフェニルー≠−メチルピ
リリウムバークロレート(J、447y、0,0/m0
I)、無水酢酸ナトリウム(/、り72.0.02um
mol)f加え、さらに30分間攪拌を続けた。室温ま
で冷却した反応混合物にエーテルよ0m1f加え氷冷下
撹拌を続けた。析出する結晶t−p取水洗乾燥した後メ
タノールよシ再結晶し化合物−(I)全融点(分解点)
/12−/It ’Cの赤紫色の結晶として得た。(収
量λ、≠P2、収率aSチ) 元素分析 分子式 C35H37010gCHα 計算値@)  7/、Jt   &、3J   /y、
02実験値(%)  7/、lJ   t、Jコ  乙
、/2合成例−2(化合物−(3)の合成) 四塩化錫(iou、コ?、OouQmol)、塩化ピパ
ロイル(りA 、4f% 0.rOmo りの混合物中
へ水冷下撹拌しながらλ−メチル−コープロベ7(JO
,11%0.弘#moり′fc滴下反応させた。滴下終
了後1時間攪拌を続けた後、tOチ過塩素酸toyを含
む氷水tooy中へ反応混合物を激しく攪拌しながら注
ぎ、さらに7時間攪拌を続けた。析出する固体を集め、
酢酸エチル/、20Mtで再結晶し一26−ジーtar
t−ブチルー≠−エチルピリリウムバークロレートを融
点1tro−/bu’cの白色針状結晶として得た。
Synthesis row-1 (Synthesis of compound-(I)) Fuji tert-butyl-≠-methylpyrylium verchlorate (J, 07f, 0,0/mol), /-
Anilino-3-phenyliminopropene (j, 22
f! , 0.0/mol) f Mix well, acetic anhydride j m
lf added. After heating the mixture ft10o0C 10
Stir for 1 minute, then λ, t-diphenyl≠-methylpyrylium barchlorate (J, 447y, 0,0/m0
I), anhydrous sodium acetate (/, 72.0.02um
mol) f was added, and stirring was continued for an additional 30 minutes. After cooling to room temperature, 0 ml of ether was added to the reaction mixture, and stirring was continued under ice cooling. The precipitated crystals t-p were taken, washed with water, dried, and then recrystallized from methanol to give compound (I) total melting point (decomposition point).
Obtained as red-purple crystals of /12-/It'C. (Yield λ, ≠ P2, Yield aS Chi) Elemental analysis Molecular formula C35H37010gCHα Calculated value @) 7/, Jt &, 3J /y,
02 Experimental value (%) 7/, lJ t, Jko Otsu, /2 Synthesis example-2 (Synthesis of compound-(3)) Tin tetrachloride (Iou, Co?, OouQmol), Piparoyl chloride (A, 4f % 0.rOmo while stirring under water cooling.
,11%0. Hiroshi #mori'fc was dropped and reacted. After the dropwise addition was completed, stirring was continued for 1 hour, and then the reaction mixture was poured into ice water containing toy perchloric acid with vigorous stirring, and stirring was continued for an additional 7 hours. Collect the precipitated solid,
Ethyl acetate/, recrystallized with 20 Mt-26-tar
t-Butyl-≠-ethylpyrylium verchlorate was obtained as white needle-like crystals with a melting point of 1 tro-/bu'c.

(収量λり、jll、収率23./チ)元素分析 分子
式 C□5H2505α、CI(α 計算値(チ)zt、i乙  7.rr   ii、or
実験値(91;)13.5P0  7.rぶ  //、
(72次に上記ピリリウム塩とJ、4−ジフェニル−μ
mメチルピリリウムバークロレートを用い合成例−/と
同様の操作を行うことにより化合物−(3)を融点λ3
r−コ39°Cの緑がかった金色の結晶として得た。
(Yield λ, jll, yield 23./chi) Elemental analysis Molecular formula C□5H2505α, CI (α Calculated value (chi) zt, iot 7.rr ii, or
Experimental value (91;) 13.5P0 7. rbu //,
(72 Next, the above pyrylium salt and J,4-diphenyl-μ
By performing the same operation as in Synthesis Example -/ using m-methylpyrylium verchlorate, compound - (3) was obtained with melting point λ3.
Obtained as greenish-gold crystals at 39°C.

元X分析 分子式 C36H3,06c1!ICHα 計算値(%)7/、69   t、!2   j、rl
r実験値(→ 71.4Al   t、j3   r、
20合成例−3(化合物−(8)の合成) −20°Cへ冷却した2、6−ジフェニル−r−ピaン
(/、、2弘f%jmmo 1 )の無水T)iF(I
0冨l)溶液にn−ブチルリチウム(7,7Mヘキサン
溶液3,11111% ぶmmoりを滴下反応させた。
Original X analysis Molecular formula C36H3,06c1! ICHα Calculated value (%) 7/, 69 t,! 2 j, rl
r experimental value (→ 71.4Al t, j3 r,
20 Synthesis Example-3 (Synthesis of Compound-(8)) Anhydrous T)iF(I
n-butyl lithium (7.7M hexane solution 3.11%) was added dropwise to the solution (7.7M hexane solution) to cause a reaction.

1時間後反応混合物tt%過塩素酸水溶液l0xl中へ
注ぎ、析出する固体をν取し、少量の塩化メチレンに溶
解した後にエーテル中へ再沈澱させ、析出する黄色固体
全戸数乾燥させた。
After 1 hour, the reaction mixture was poured into 10 x 1 tt% aqueous perchloric acid solution, the precipitated solid was collected, dissolved in a small amount of methylene chloride, reprecipitated in ether, and all the precipitated yellow solids were dried.

(λ、6−ジフェニルーJ−n−プロピルビIJ IJ
ウムパークロレート、収量o、try、収率弘jチ) 次に上記ピリリウム塩の粗結晶とλ、t−ジーtert
−7”チルー弘−メチルーピリリクムパークロレートを
用い合成例−7と同様の操作を行うことにより化合物−
(8)を融点233〜23に6Cの赤色がかった金色の
結晶として得た。
(λ,6-diphenyl-J-n-propylbi IJ IJ
Next, the crude crystals of the above pyrylium salt and λ, t-tert
-7" Compound-
(8) was obtained as reddish-gold crystals of 6C with a melting point of 233-23.

元素分析 分子式 C38H4306α1Cd    
    α 計算値(%)  72.JI   t、r7   j、
tλ実験値(%)72.2/   乙、tr   s、
zり本発明の改良された電子写真感光材料は、少なくと
も支持体、感光層からなる。
Elemental analysis Molecular formula C38H4306α1Cd
α Calculated value (%) 72. JI t, r7 j,
tλ experimental value (%) 72.2/ Otsu, tr s,
The improved electrophotographic material of the present invention comprises at least a support and a photosensitive layer.

本発明において使用する支持体は導電化処理を必要とす
る。具体的な導電化処理としては、アルミニウム、金、
バラジューム、インジューム等ノ金属を蒸着する方法、
又はIn、03、SnO□等の金属酸化物を蒸着する方
法、又は金属粉やS n 02等の金属酸化物等をバイ
ンダーポリマーに分散して塗布する方法、又は有機四級
塩化合物等をバインダーポリマーとともに溶解、塗布す
る方法、ヨウ化銅のアセトニトリル溶液を塗布する方法
等をあげることができる。
The support used in the present invention requires conductive treatment. Specific conductive treatments include aluminum, gold,
Method of vapor depositing metals such as baladium and indium,
Alternatively, a method of vapor-depositing metal oxides such as In, 03, SnO Examples include a method of dissolving and applying it together with a polymer, and a method of applying an acetonitrile solution of copper iodide.

本発明の電子写真感光材料に用いられる有機光導電性物
質として争土、従来から知られている数多くのものを用
いることができる。
As the organic photoconductive substance used in the electrophotographic light-sensitive material of the present invention, many conventionally known organic photoconductive substances can be used.

例えば高分子のものでは次のようなものを挙げることが
できる。
Examples of polymers include the following:

(I)米国特許第3,037,1rt1号明細書、特公
昭3μ−10り6を号公報、同≠2−/971/号公報
、同びコー1tコ30号公報記載のポリビニルカルバゾ
ールおよびその肪導体、 (2)特公昭4t!−/rt741−号公報、特公昭≠
3−/り722号公報記載のポリビニルピレン、ポリビ
ニルアントラセン、ポリーλ−ビニル−≠−(4c/ 
 ))チルアミノフェニル)−よ−フェニル−オキサゾ
ール、ポリ−3−ビニル−N−エチルカルバゾールナト
のビニル重合体、 (3)特公昭μJ−/9/P3号公報記載のポリアセナ
フチレン、ポリイソデン、アセナフチレンとスチレンの
共重合などのような重合体、(4)特公昭jt−/Jり
≠Q号公報などに記載のピレン−ホルムアルデヒド樹脂
、ブロムピレン−ホルムアルデヒド樹脂、エチルカルバ
ゾール−ホルムアルデヒド樹脂などの縮合樹脂、 (5)特開昭!を一タore3号及び特開昭タロー/ 
A / jrQ号公報に記載された各種のトリフェニル
メタンポリマー。
(I) Polyvinyl carbazole and its Fat conductor, (2) Special Public Showa 4t! -/rt741- Publication, Special Publication Sho≠
Polyvinylpyrene, polyvinylanthracene, polyλ-vinyl-≠-(4c/
)) tylaminophenyl)-yo-phenyl-oxazole, vinyl polymer of poly-3-vinyl-N-ethylcarbazole, (3) polyacenaphthylene and polyisodene described in Japanese Patent Publication No. Sho μJ-/9/P3 (4) Condensation of pyrene-formaldehyde resin, brompyrene-formaldehyde resin, ethylcarbazole-formaldehyde resin, etc. described in Japanese Patent Publication No. Shojt-/Jri≠Q Publication, etc. Resin, (5) Tokukaisho! Ichita ore3 and Tokukai Sho Taro/
Various triphenylmethane polymers described in A/JRQ publication.

また低分子のものでは次のようなもの金婚げることがで
きる。
In addition, the following low-molecular weight products can be used successfully.

(6)米国特許第J//2/り7号明細書などに記載さ
れているトリアゾール誘導体、 (7)米国特許第JarりtA!A7号明細書などに記
載されていもオキサジアゾール誘導体、(8)特公昭3
7−14094号公報などに記載されているイミダゾー
ル誘導体、 (9)米国特許第36/!u02号、同第31202r
y号、同31412!1A44i4;、%公昭4’r−
rzr号、特公昭j/−10デr3号、特開昭j/−F
j2u≠号、特開昭!!−1710!号、特開昭!を一
≠7≠r号、特開昭411−101467号、特開昭!
!r−/Jj’tりj3号、特開昭!乙−3乙tjA号
明細書、公報などに記載のポリアリールアルカン時導体
、 αQ 米国特許第3iro’yλり号、米国特許第u2
7174At号、特開昭rz−rrota号、特開昭z
s−rro4を号、特開昭≠2−10!!37号、特開
昭13−!10に6号、特開昭lt−100!/号、特
開昭!t−41/μ/号、特開昭j7−μよよ≠!号、
特開昭!≠−/lコぶ37号、特開昭j!−7≠!≠6
号明細書、公報などに記載されているピラゾリン誘導体
およびピラゾロン誘導体、 α◇ 米国特許第3t/!≠Oa号明細書、特公昭r/
−1oiot号、%開昭j!−r3443!号、特開昭
!μm1ior3を号、特開昭j≠−//ヂ?2!号、
特公昭弘6−377コ号、特公昭4Ly−2rJJ4号
明細書、公報などに記載されているフェニレンジアミン
誘導体、 (ロ)米国特許jj&7μよ0号、粉公昭≠2−3j7
02号、西独国特許(DAS)//10zir号、米国
特許第3110703号、米国特許第3コuOJ?7号
、米国特許第3乙よ了j20号、米国特許第≠2321
Oj号、米国特許第≠/7jり47号、米国特許第弘0
/237を号、特開昭1!−/弘442so号、特開昭
tA−//り732号、特公昭3ター、27!77号、
特開昭j乙−2241−37号明細書、公報などに記載
されているアリールアミン誘導体、 (至)米国特許3124101号明細書記載のアミン置
換カルコン誘導体、 α→ 米国特許第3!≠コj≠z号明細書などに記載の
N、N−ビカルパジル誘導体、 (至)米国特許第32!7203号明細書などに記載の
オキサゾール誘導体、 (7)特開昭14−47−1.23μ号公報などに記載
のスチリルアントラセン誘導体、 0η 特開昭jμm/ / 0137号公報などに記載
されているフルオレノン誘導体、 (至)米国特許第3777≠42号、特開昭!μ−!り
l弘3号(米国特許第41/jO?I7号に対応)、特
開昭1j−!20乙3号、特開昭1!−よコo6≠号、
特開昭!!−≠6760号、特開昭!!−♂j≠Pj号
、特開昭!7−//J!0号、特開昭J−7−/4#7
4Cり号、特開昭j7−6≠ハリ号明細書などに開示さ
れているヒドラゾン誘導体、α儲 特公昭3ターIIb
ら号、特開昭jj−72≠!O号(米国特許弘、2≦j
、?90号に対応)、米国特許≠、04L7.?弘2号
明細書などに開示されているベンジジン誘導体などがあ
る。
(6) Triazole derivatives described in U.S. Patent No. J//2/7 and the like; Oxadiazole derivatives, (8) Japanese Patent Publication No. 3, even though they are described in the specification of No. A7, etc.
Imidazole derivatives described in Publication No. 7-14094 etc., (9) US Patent No. 36/! u02, same number 31202r
y issue, 31412!1A44i4;,%Kosho4'r-
rzr, special public Shoj/-10 de r3, special public Shoj/-F
j2u≠ issue, Tokukaisho! ! -1710! No., Tokukai Akira! 1≠7≠r issue, JP-A No. 411-101467, JP-A-Sho!
! r-/Jj'trij3, Tokukai Sho! Otsu-3 Polyarylalkane conductor described in Otsu tjA specification, gazette, etc., αQ U.S. Patent No. 3iro'yλri No. 3, U.S. Patent No. U2
7174At, JP-A Showrz-rrota, JP-A Showz
Issue s-rro4, Tokukai Sho≠2-10! ! No. 37, JP-A-13-! No. 6 to 10, Tokukai Sho lt-100! / issue, Tokukai Akira! T-41/μ/ issue, Tokukai Shoj7-μ ≠! issue,
Tokukai Akira! ≠-/l Kobu No. 37, Tokukai Shoj! -7≠! ≠6
Pyrazoline derivatives and pyrazolone derivatives described in the specification, publication, etc., α◇ U.S. Patent No. 3t/! ≠Oa specification, Tokuko Sho r/
-1 oiot issue, % Kaishoj! -r3443! No., Tokukai Akira! μm1ior3 issue, JP-A-Kai J≠-//ヂ? 2! issue,
Phenyldiamine derivatives described in Japanese Patent Publication No. 6-377, Japanese Patent Publication No. 4Ly-2rJJ4, publications, etc. (b) U.S. Patent jj & 7μyo No. 0, Kokosho Powder ≠ 2-3j7
No. 02, West German Patent (DAS) //10zir, U.S. Patent No. 3110703, U.S. Patent No. 3 uOJ? No. 7, U.S. Patent No. 3, U.S. Patent No. 20, U.S. Patent No. ≠ 2321
Oj No., U.S. Patent No. ≠/7jri No. 47, U.S. Patent No. 0
Issue /237, Tokukai Sho 1! -/Hiroshi 442so issue, JP-A-//ri 732, special public Sho 3ter, 27!77,
Arylamine derivatives described in JP-A No. 2241-37 and publications, (to) amine-substituted chalcone derivatives described in U.S. Pat. No. 3,124,101, α→ U.S. Patent No. 3! ≠Koj≠N,N-bicalpadil derivatives described in the specification of No. z etc. (to) Oxazole derivatives described in the specification of US Pat. No. 32!7203 etc., (7) JP-A-14-47-1. Styryl anthracene derivatives described in JP-A No. 23μ, etc., fluorenone derivatives described in JP-A No. 0137, U.S. Patent No. 3777≠42, JP-A-Sho! μ-! No. 3 (corresponding to U.S. Patent No. 41/jO?I7), JP-A-1J-! 20 Otsu No. 3, Tokukai Sho 1! - Yoko o6≠ issue,
Tokukai Akira! ! -≠No. 6760, Tokukai Sho! ! −♂j≠Pj issue, Tokukai Akira! 7-//J! No. 0, JP-A-Sho J-7-/4#7
4C, hydrazone derivatives disclosed in JP-A No. 7-6≠Hari, etc.
No. JP-A-Shojj-72≠! No. O (US Patent Law, 2≦j
,? No. 90), U.S. Patent ≠, 04L7. ? Examples include benzidine derivatives disclosed in Kou No. 2 specification and the like.

これらの有機光導電性物質は、感光層中にコO〜F2重
量慢の範囲で用いることが好ましい。
These organic photoconductive substances are preferably used in the photosensitive layer in a weight range of O to F2.

有機光導電体が低分子化合物の場合には、適当な被膜性
を有する高分子化合物全結着剤として用いることができ
る。具体的には、ポリアミド、ポリウレタン、ポリエス
テル、エポキシ樹脂、ポリケトン、スチレン系重合体お
よび共重合体、ポリ−N−ビニルカルバゾール、ポリカ
ーボネート、ポリエステルカーボネート、ポリスルホン
、塩化ビニール樹脂、塩化ビニリデン樹脂、酢酸ビニル
樹脂、アクリル樹脂等の各種の高分子化合物を挙げるこ
とができる。有機光導電体が高分子化合物の場合には、
それ自体被膜性を有するが、必要に応じて上記の高分子
化合物を添加しても良い。
When the organic photoconductor is a low-molecular compound, a high-molecular compound having appropriate film properties can be used as a total binder. Specifically, polyamide, polyurethane, polyester, epoxy resin, polyketone, styrenic polymer and copolymer, poly-N-vinylcarbazole, polycarbonate, polyester carbonate, polysulfone, vinyl chloride resin, vinylidene chloride resin, vinyl acetate resin. , various polymeric compounds such as acrylic resin. When the organic photoconductor is a polymer compound,
Although it has film properties by itself, the above-mentioned polymer compound may be added if necessary.

結着剤の添加量は有機光導電体の種類によシ異なるが低
分子有機光導電体の場合有機光導電体に対して重量比で
jO−200%使用するのが望ましい。有機光導電体が
高分子の場合は/%−jt’0チ使用するのが望ましい
The amount of binder added varies depending on the type of organic photoconductor, but in the case of a low-molecular organic photoconductor, it is desirable to use jO-200% by weight relative to the organic photoconductor. When the organic photoconductor is a polymer, it is desirable to use /%-jt'0chi.

本発明の記録材料には化学増感剤を用いることができる
が化学増感剤としては、例えばトリニトロフルオレノン
、クロラニル、テトラシアノエチレン等の電子吸引性化
合物、特開昭re−≦j≠37号、特開昭jl−10λ
λ3り号等に記載の化合物等をあげることができる。
A chemical sensitizer can be used in the recording material of the present invention, and examples of the chemical sensitizer include electron-withdrawing compounds such as trinitrofluorenone, chloranil, and tetracyanoethylene; No., JP-A-Shojl-10λ
Compounds described in No. λ3 etc. can be mentioned.

本発明の電子写真感光材料中には、必要に応じて公知の
補剤(5tructure  agent)、可塑剤、
染料、顔料等金、本発明の電子写真感光材料の特性を損
わない範囲で含有させることができる。
The electrophotographic material of the present invention may contain known structure agents, plasticizers,
Gold, such as dyes and pigments, can be contained within a range that does not impair the properties of the electrophotographic material of the present invention.

補強剤としてシアノエチルセルロース、ニトリルゴム、
ビスフェノールAのポリカルiネート、線状ポリエステ
ルスチレン−ブタジェン共重合体、塩化ビニリデン−ア
クリロニトリル共重合体などを用いることができる。可
塑剤として塩素化ビフェニル、エポキシ樹脂、トリフェ
ニルメタン化合物、クマロン樹脂、低分子量キシレン樹
脂など上用いることができる。
Cyanoethyl cellulose, nitrile rubber, as reinforcing agents
Polycarnate of bisphenol A, linear polyester styrene-butadiene copolymer, vinylidene chloride-acrylonitrile copolymer, etc. can be used. As a plasticizer, chlorinated biphenyls, epoxy resins, triphenylmethane compounds, coumaron resins, low molecular weight xylene resins, etc. can be used.

本発明の電子写真感光材料には、その他に特公昭弘ター
≠≦λ43号公報に記載されているがととくの可塑剤、
特公昭j7−15Fμ23号公報に記載のシランカップ
リング剤、硬化触媒及び/又は架橋剤、特開昭、ri−
rroコ!号公報記載のフッ素含有界面活性剤、特公昭
j7−/り弘2μ号公報記載のルイス酸、および特公昭
17−/2712号公報記載の電子供与性物質等全含有
することができる。
In addition, the electrophotographic light-sensitive material of the present invention includes a special plasticizer as described in Japanese Patent Publication Akihirota≠≦λ43,
Silane coupling agent, curing catalyst and/or crosslinking agent described in Japanese Patent Publication No. Sho J7-15Fμ23, Japanese Patent Publication No. Sho, ri-
rroko! The fluorine-containing surfactant described in Japanese Patent Publication No. Sho J7-/Riko No. 2μ, the Lewis acid described in Japanese Patent Publication No. Sho 17-/2712, etc. can all be contained.

本発明の電子写真感光材料の作成に際しては溶媒トシテ
、ベンゼン、トルエン、キシレン、クロロベンゼン、ジ
クロロメタン、ジクロロエタン、トリクロロエタン、シ
クロヘキサノン、テトラヒドロフラン、ジオキサy等お
よびこれらの混合溶剤のうちから高分子有機光導電体、
増感色素および必要に応じて添加される成分を共に溶解
または分散する溶媒を用いることができる。
When preparing the electrophotographic light-sensitive material of the present invention, a polymeric organic photoconductor, a solvent such as benzene, toluene, xylene, chlorobenzene, dichloromethane, dichloroethane, trichloroethane, cyclohexanone, tetrahydrofuran, dioxane, etc., and a mixed solvent thereof are used to prepare the electrophotographic light-sensitive material of the present invention.
A solvent that dissolves or disperses both the sensitizing dye and optionally added components can be used.

本発明による感光材料は、次の様にして得ることが出来
る。
The photosensitive material according to the present invention can be obtained as follows.

感光材料とするには、光導電性物質、本発明のピIJ 
+)ラム系化合物及び必要に応じて添加される成分全所
望の割合で溶剤に溶解あるいは分散せしめて、導電性支
持体上(塗布、乾燥するか、上記成分を導電性支持体上
に溶融塗布、あるいは感光性薄膜全溶液から、または溶
融押し出し法等で作成し、自己支持性フィルムとするこ
とができる。
In order to make a photosensitive material, a photoconductive substance, PIIJ of the present invention is used.
+) Rum-based compound and all components to be added as necessary are dissolved or dispersed in a solvent in the desired ratio and coated on a conductive support (coated and dried, or the above components are melt-coated on a conductive support. Alternatively, the photosensitive thin film can be prepared from a whole solution or by a melt extrusion method to form a self-supporting film.

また塗布にあたっては塗布溶液中に公知の塗布界面活性
剤全含有させることができる。
Further, during coating, all known coating surfactants can be included in the coating solution.

本発明の電子写真感光材料は表面保護層を有することが
できる。
The electrophotographic material of the present invention may have a surface protective layer.

表面保護層としては微粒子を含有する結着樹脂の層が例
示できる。用いられる結着樹脂としては、ポリエステル
カーボネート、ポリスルホン、ポリエーテル、ポリエス
テル、ポリカーゼネート、ポリアミド、ポリイミド、ポ
リウレタン、アクリル酸エステル重合体及び共重合体、
メタクリル酸エステル重合体及び共重合体、スチレン系
樹脂、ポリビニルアセタール、ポリビニルカルバゾール
、塩化ビニル系樹脂、塩化ビニリグン系樹脂、塩素化ポ
リオレフィン、酢酸ビニル系樹脂、アルキシド樹脂、中
7レン樹脂、ケント樹脂、セルロース類があるが、これ
に限定されるものではない。これら樹脂は、単独又は2
種以上併用して使用することができる。
An example of the surface protective layer is a layer of a binder resin containing fine particles. Binder resins used include polyester carbonate, polysulfone, polyether, polyester, polycarbonate, polyamide, polyimide, polyurethane, acrylic ester polymer and copolymer,
Methacrylic acid ester polymers and copolymers, styrene resins, polyvinyl acetals, polyvinyl carbazole, vinyl chloride resins, vinyl chloride resins, chlorinated polyolefins, vinyl acetate resins, aloxide resins, Naka-7lene resins, Kent resins, Examples include, but are not limited to, celluloses. These resins may be used alone or in combination.
More than one species can be used in combination.

微粒子としては各種の微粒子を用いることができる。例
えばシリカ、炭酸カルシューム、マイカ、クレー、ボロ
ンナイトライド等の無機絶縁性微粒子、酸化チタン、酸
化アルミニウム、酸化マグネシューム、酸化亜鉛、二酸
化スズ、酸化ビスマス等の金属酸化物、ステアリン酸亜
鉛、ステアリン酸カルシューム、ラウリン酸亜鉛等の長
鎖有機酸金属塩、ポリプロピレン、ポリエチレン、ポリ
アミド、ポリ7ツ化ビニリデン、ポリテトラフルオロエ
チレン等の有機微粒子等をあげることができるが、これ
に限定されるものでない。これらの微粒子のうち、特に
容易に分散できるシリカ、酸化アルミニウム、酸化チタ
ンを好ましく用いることができる。
Various types of fine particles can be used as the fine particles. For example, inorganic insulating fine particles such as silica, calcium carbonate, mica, clay, and boron nitride, metal oxides such as titanium oxide, aluminum oxide, magnesium oxide, zinc oxide, tin dioxide, and bismuth oxide, zinc stearate, and calcium stearate. Examples include, but are not limited to, long-chain organic acid metal salts such as zinc laurate, organic fine particles such as polypropylene, polyethylene, polyamide, polyvinylidene heptadide, and polytetrafluoroethylene. Among these fine particles, silica, aluminum oxide, and titanium oxide, which are particularly easily dispersed, can be preferably used.

本発明の電子写真感光材料は必要に応じて、支持体と感
光層との間、あるいは感光層と表面保護層の間に、各種
目的(たとえば接着の改良等)のためK、中間層金膜け
ても良い。
The electrophotographic light-sensitive material of the present invention may optionally include K, intermediate gold film, etc. for various purposes (for example, to improve adhesion, etc.) between the support and the photosensitive layer, or between the photosensitive layer and the surface protective layer. It's okay to go.

本発明の電子写真感光材料は、その背面にすべり性、帯
電性、耐ブロッキング性、アンチハレーション性等の緒
特性全改良するための層を設けてもよい。
The electrophotographic material of the present invention may be provided with a layer on its back surface for improving all the properties such as slip properties, charging properties, anti-blocking properties, and antihalation properties.

「実施例」 以下に本発明の実施例を示すが、本発明は、これに限定
されるものではない。
"Example" Examples of the present invention are shown below, but the present invention is not limited thereto.

上記組成の感光液1[製し、ついでワイヤーパー’を用
いて酸化インジウムの蒸着膜全有する厚さ100μmの
ポリエチレンテレフタレートフィルム上に塗布、乾燥し
た。厚さr、弘μmの光導電層を有する電子写真フィル
ムが得られた。このフィルムは第1図に示すように半導
体レーザーの発振領域内(71r j n m )に吸
収極大を有する。
A photosensitive solution 1 having the above composition was prepared, and then coated on a polyethylene terephthalate film having a thickness of 100 μm, which had an entire vapor-deposited film of indium oxide, using a wire parr and dried. An electrophotographic film was obtained having a photoconductive layer with a thickness r and a diameter of 1 μm. As shown in FIG. 1, this film has an absorption maximum within the oscillation region of the semiconductor laser (71r j nm).

次に得られた電子写真フィルムを複写紙試験装置5p−
4Aコt(川口電機■製)を用いて、スタチック方式に
より+7.!KVでコロナ帯電し、7rJnmの単色光
でW元し電子写真特性音調べた。
Next, the obtained electrophotographic film was tested in a copy paper tester 5p-
Using a 4A cot (manufactured by Kawaguchi Denki ■), +7. ! It was corona-charged with KV, and then subjected to W heating with monochromatic light of 7rJnm to examine the electrophotographic characteristics and sound.

特性の電荷保持力は、コロナ帯電した後暗所で40秒後
に電位全測定し、初期電位の残存率(%)を求めた。
The characteristic charge retention ability was determined by measuring the total potential 40 seconds after corona charging in a dark place and determining the residual rate (%) of the initial potential.

また感度として、露光前の電位が光減衰して//2にな
る露光1t(E5o)と//10になる露光量(E、。
As for the sensitivity, the potential before exposure is optically attenuated by exposure 1t (E5o), which becomes //2, and exposure amount (E,) which becomes //10.

)を求めた。) was sought.

電荷保持力は20%と良好な値を示し、感度は電界強度
o、r/X10  v/ntにおいてタタe r g/
1yx2(E5o) 〜t lAt e r g/m2
(E9o)と極めて高感度々ものであった。
The charge retention force shows a good value of 20%, and the sensitivity is tata e r g/ at the electric field strength o, r/X10 v/nt.
1yx2(E5o) ~t lAter g/m2
(E9o) and extremely high sensitivity.

また光源としてタングステン光(4A1uX)?用いた
場合も電荷保持力5P0チ、E5゜コロ1ux−sec
、E、。/f71ux−sec(電界強度0、!≠X 
/ (7’ V / OR)と良好な値を示し友。
Also, tungsten light (4A1uX) as a light source? When used, charge retention force is 5P0chi, E5゜column 1ux-sec
,E. /f71ux-sec (electric field strength 0, !≠X
/ (7' V / OR), which shows a good value.

次に上記電子写真フィルム2jo c′c、to%凡H
の条件下KIO週間放置した後、吸収極大、電子写真特
性を調べたところ、はとんど変化が認められなかった。
Next, the above electrophotographic film 2jo c'c, to% H
After being left for KIO under the following conditions, absorption maximum and electrophotographic properties were examined, and almost no change was observed.

実施例 2 本発明の化合物−(I)、(3)、(8)を用い実施例
−/と同様の操作を行ってそれぞれ電子写真フィルムを
得た。各フィルムの吸収極大、電子写真特性についての
結果を第1表に示す。
Example 2 Compounds (I), (3), and (8) of the present invention were used in the same manner as in Example 2 to obtain electrophotographic films. Table 1 shows the results regarding absorption maximum and electrophotographic properties of each film.

第1我より明らかなようにこれらのフィルムはいずれも
半導体レーザーの発振領域内に吸収極大を持ち、良好な
電子写真感度を有している。つぎにコレラ0フィルムt
−j o ’C,r Oc4 RHtD条件下にIO週
間放置した後に上記緒特性を測定したところ表−/とほ
とんど変化がなかった。
As is clear from Part 1, all of these films have an absorption maximum within the oscillation region of the semiconductor laser and have good electrophotographic sensitivity. Next, cholera 0 film t
-j o 'C, r Oc4 When the above-mentioned properties were measured after being left under RHtD conditions for IO weeks, there was almost no change from the table -/.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は実施例−7の電子写真フィルムの可視へ近赤外
領域の吸収スペクトルを示す。
FIG. 1 shows the absorption spectrum of the electrophotographic film of Example 7 in the visible to near-infrared region.

Claims (1)

【特許請求の範囲】 有機光導電性物質と、下記一般式( I )で示される化
合物の少くとも一種以上とを含有することを特徴とする
電子写真感光材料。 一般式( I ) ▲数式、化学式、表等があります▼ 式中、R_1、R_2、R_4、R_5は水素原子、置
換もしくは未置換のアルキル基、置換もしくは未置換の
アリール基を示し、R_3は水素原子、ハロゲン原子、
置換もしくは未置換のアルキル基、置換もしくは未置換
のアリール基を示す。R_1、R_2、R_3、R_4
、R_5の水素原子、アルキル基、アリール基はそれぞ
れ同じものでも異つていてもよい。Xはアニオンを示す
[Scope of Claims] An electrophotographic light-sensitive material comprising an organic photoconductive substance and at least one compound represented by the following general formula (I). General formula (I) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ In the formula, R_1, R_2, R_4, R_5 represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, and R_3 is hydrogen atoms, halogen atoms,
Indicates a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group. R_1, R_2, R_3, R_4
, R_5's hydrogen atom, alkyl group, and aryl group may be the same or different. X represents an anion.
JP20033285A 1985-09-05 1985-09-10 Electrophotographic sensitive material Granted JPS6259963A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP20033285A JPS6259963A (en) 1985-09-10 1985-09-10 Electrophotographic sensitive material
US06/903,918 US4663260A (en) 1985-09-05 1986-09-05 Electrophotographic light-sensitive material comprising organic photoconductor and pyrylium sensitizer
DE3630389A DE3630389C2 (en) 1985-09-05 1986-09-05 Electrophotographic light-sensitive material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20033285A JPS6259963A (en) 1985-09-10 1985-09-10 Electrophotographic sensitive material

Publications (2)

Publication Number Publication Date
JPS6259963A true JPS6259963A (en) 1987-03-16
JPH0513514B2 JPH0513514B2 (en) 1993-02-22

Family

ID=16422533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20033285A Granted JPS6259963A (en) 1985-09-05 1985-09-10 Electrophotographic sensitive material

Country Status (1)

Country Link
JP (1) JPS6259963A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6808857B2 (en) 2001-05-21 2004-10-26 Kodak Polychrome Graphics Llc Negative-working photosensitive composition and negative-working photosensitive lithographic printing plate

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6602645B1 (en) 1999-05-21 2003-08-05 Fuji Photo Film Co., Ltd. Photosensitive composition and planographic printing plate base using same
US6511790B2 (en) 2000-08-25 2003-01-28 Fuji Photo Film Co., Ltd. Alkaline liquid developer for lithographic printing plate and method for preparing lithographic printing plate
DE60144036D1 (en) 2000-11-30 2011-03-24 Fujifilm Corp Lithographic printing plate precursor
US20040067435A1 (en) 2002-09-17 2004-04-08 Fuji Photo Film Co., Ltd. Image forming material
ATE532106T1 (en) 2002-09-20 2011-11-15 Fujifilm Corp METHOD FOR PRODUCING A PLANT PLATE PRINTING PLATE
ATE433857T1 (en) 2003-03-26 2009-07-15 Fujifilm Corp PLANT PRINTING METHOD AND PRE-SENSITIZED PLATE
JP2005028774A (en) 2003-07-07 2005-02-03 Fuji Photo Film Co Ltd Original plate for planographic printing plate, and planographic printing method
JP4291638B2 (en) 2003-07-29 2009-07-08 富士フイルム株式会社 Alkali-soluble polymer and planographic printing plate precursor using the same
US20050153239A1 (en) 2004-01-09 2005-07-14 Fuji Photo Film Co., Ltd. Lithographic printing plate precursor and lithographic printing method using the same
DE602005003606T2 (en) 2004-04-09 2008-12-04 Fujifilm Corp. Planographic printing plate precursor and planographic printing process.
US20050263021A1 (en) 2004-05-31 2005-12-01 Fuji Photo Film Co., Ltd. Platemaking method for lithographic printing plate precursor and planographic printing method
JP2006021396A (en) 2004-07-07 2006-01-26 Fuji Photo Film Co Ltd Original lithographic printing plate and lithographic printing method
US7146909B2 (en) 2004-07-20 2006-12-12 Fuji Photo Film Co., Ltd. Image forming material
US7425406B2 (en) 2004-07-27 2008-09-16 Fujifilm Corporation Lithographic printing plate precursor and lithographic printing method
US20060032390A1 (en) 2004-07-30 2006-02-16 Fuji Photo Film Co., Ltd. Lithographic printing plate precursor and lithographic printing method
JP2006058430A (en) 2004-08-18 2006-03-02 Fuji Photo Film Co Ltd Lithography original plate
JP2006058702A (en) 2004-08-20 2006-03-02 Fuji Photo Film Co Ltd Lithographic printing original plate
ATE389900T1 (en) 2004-08-24 2008-04-15 Fujifilm Corp METHOD FOR PRODUCING A LITHOGRAPHIC PRINTING PLATE
JP2006062188A (en) 2004-08-26 2006-03-09 Fuji Photo Film Co Ltd Color image forming material and original plate of lithographic printing plate
JP4429116B2 (en) 2004-08-27 2010-03-10 富士フイルム株式会社 Planographic printing plate precursor and lithographic printing plate making method
JP2006068963A (en) 2004-08-31 2006-03-16 Fuji Photo Film Co Ltd Polymerizable composition, hydrophilic film using this composition and original lithographic printing plate
JP5089866B2 (en) 2004-09-10 2012-12-05 富士フイルム株式会社 Planographic printing method
JP4404734B2 (en) 2004-09-27 2010-01-27 富士フイルム株式会社 Planographic printing plate precursor
US20060150846A1 (en) 2004-12-13 2006-07-13 Fuji Photo Film Co. Ltd Lithographic printing method
JP2006181838A (en) 2004-12-27 2006-07-13 Fuji Photo Film Co Ltd Original plate of lithographic printing plate
EP1685957B1 (en) 2005-01-26 2013-12-11 FUJIFILM Corporation Packaged body of lithographic printing plate precursors
JP4474296B2 (en) 2005-02-09 2010-06-02 富士フイルム株式会社 Planographic printing plate precursor
US7858291B2 (en) 2005-02-28 2010-12-28 Fujifilm Corporation Lithographic printing plate precursor, method for preparation of lithographic printing plate precursor, and lithographic printing method
JP4538350B2 (en) 2005-03-18 2010-09-08 富士フイルム株式会社 Photosensitive composition, image recording material, and image recording method
JP4404792B2 (en) 2005-03-22 2010-01-27 富士フイルム株式会社 Planographic printing plate precursor
JP4574506B2 (en) 2005-03-23 2010-11-04 富士フイルム株式会社 Planographic printing plate precursor and its plate making method
JP4524235B2 (en) 2005-03-29 2010-08-11 富士フイルム株式会社 Planographic printing plate precursor
JP4815270B2 (en) 2005-08-18 2011-11-16 富士フイルム株式会社 Method and apparatus for producing a lithographic printing plate
JP4759343B2 (en) 2005-08-19 2011-08-31 富士フイルム株式会社 Planographic printing plate precursor and planographic printing method
JP4701042B2 (en) 2005-08-22 2011-06-15 富士フイルム株式会社 Photosensitive planographic printing plate
JP4777226B2 (en) 2006-12-07 2011-09-21 富士フイルム株式会社 Image recording materials and novel compounds
US8771924B2 (en) 2006-12-26 2014-07-08 Fujifilm Corporation Polymerizable composition, lithographic printing plate precursor and lithographic printing method
JP2008163081A (en) 2006-12-27 2008-07-17 Fujifilm Corp Laser-decomposable resin composition and pattern-forming material and laser-engravable flexographic printing plate precursor using the same
JP4881756B2 (en) 2007-02-06 2012-02-22 富士フイルム株式会社 Photosensitive composition, lithographic printing plate precursor, lithographic printing method, and novel cyanine dye
EP1972440B1 (en) 2007-03-23 2010-06-23 FUJIFILM Corporation Negative lithographic printing plate precursor and lithographic printing method using the same
JP4860525B2 (en) 2007-03-27 2012-01-25 富士フイルム株式会社 Curable composition and planographic printing plate precursor
EP1974914B1 (en) 2007-03-29 2014-02-26 FUJIFILM Corporation Method of preparing lithographic printing plate
EP1975706A3 (en) 2007-03-30 2010-03-03 FUJIFILM Corporation Lithographic printing plate precursor
EP1975710B1 (en) 2007-03-30 2013-10-23 FUJIFILM Corporation Plate-making method of lithographic printing plate precursor
JP5046744B2 (en) 2007-05-18 2012-10-10 富士フイルム株式会社 Planographic printing plate precursor and printing method using the same
JP5376844B2 (en) 2007-06-21 2013-12-25 富士フイルム株式会社 Planographic printing plate precursor and planographic printing method
US8426102B2 (en) 2007-06-22 2013-04-23 Fujifilm Corporation Lithographic printing plate precursor and plate making method
ATE484386T1 (en) 2007-07-02 2010-10-15 Fujifilm Corp FLAT PRINTING PLATE PRECURSOR AND FLAT PRINTING PROCESS THEREFROM
JP2009091555A (en) 2007-09-18 2009-04-30 Fujifilm Corp Curable composition, image forming material and planographic printing plate precursor
JP2009069761A (en) 2007-09-18 2009-04-02 Fujifilm Corp Plate making method for planographic printing plate
JP2009083106A (en) 2007-09-27 2009-04-23 Fujifilm Corp Lithographic printing plate surface protective agent and plate making method for lithographic printing plate
JP2009085984A (en) 2007-09-27 2009-04-23 Fujifilm Corp Planographic printing plate precursor
JP4890403B2 (en) 2007-09-27 2012-03-07 富士フイルム株式会社 Planographic printing plate precursor
EP2042311A1 (en) 2007-09-28 2009-04-01 FUJIFILM Corporation Lithographic printing plate precursor, method of preparing lithographic printing plate and lithographic printing method
JP4994175B2 (en) 2007-09-28 2012-08-08 富士フイルム株式会社 Planographic printing plate precursor and method for producing copolymer used therefor
JP5244518B2 (en) 2007-09-28 2013-07-24 富士フイルム株式会社 Planographic printing plate precursor and lithographic printing plate preparation method
ATE475906T1 (en) 2007-09-28 2010-08-15 Fujifilm Corp NEGATIVE LIGHT SENSITIVE MATERIAL AND NEGATIVE PLANOGRAPHIC PRINTING PLATE PRECURSOR
JP2009086373A (en) 2007-09-28 2009-04-23 Fujifilm Corp Method of developing negative planographic printing plate
JP4790682B2 (en) 2007-09-28 2011-10-12 富士フイルム株式会社 Planographic printing plate precursor
JP5055077B2 (en) 2007-09-28 2012-10-24 富士フイルム株式会社 Image forming method and planographic printing plate precursor
JP5002399B2 (en) 2007-09-28 2012-08-15 富士フイルム株式会社 Processing method of lithographic printing plate precursor
JP4890408B2 (en) 2007-09-28 2012-03-07 富士フイルム株式会社 Polymerizable composition, lithographic printing plate precursor using the same, alkali-soluble polyurethane resin, and method for producing diol compound
JP5322537B2 (en) 2007-10-29 2013-10-23 富士フイルム株式会社 Planographic printing plate precursor
CN101430505B (en) 2007-11-08 2013-04-17 富士胶片株式会社 Resin composition for laser engraving, resin printing plate precursor for laser engraving, relief printing plate and method for production of relief printing plate
JPWO2009063824A1 (en) 2007-11-14 2011-03-31 富士フイルム株式会社 Method for drying coating film and method for producing lithographic printing plate precursor
JP2009139852A (en) 2007-12-10 2009-06-25 Fujifilm Corp Method of preparing lithographic printing plate and lithographic printing plate precursor
JP2009186997A (en) 2008-01-11 2009-08-20 Fujifilm Corp Lithographic printing plate precursor, method of preparing lithographic printing plate and lithographic printing method
JP5155677B2 (en) 2008-01-22 2013-03-06 富士フイルム株式会社 Planographic printing plate precursor and its plate making method
JP5500831B2 (en) 2008-01-25 2014-05-21 富士フイルム株式会社 Method for preparing relief printing plate and printing plate precursor for laser engraving
JP5241252B2 (en) 2008-01-29 2013-07-17 富士フイルム株式会社 Resin composition for laser engraving, relief printing plate precursor for laser engraving, relief printing plate and method for producing relief printing plate
JP2009184188A (en) 2008-02-05 2009-08-20 Fujifilm Corp Lithographic printing original plate and printing method
JP5150287B2 (en) 2008-02-06 2013-02-20 富士フイルム株式会社 Preparation method of lithographic printing plate and lithographic printing plate precursor
JP5137618B2 (en) 2008-02-28 2013-02-06 富士フイルム株式会社 Resin composition for laser engraving, relief printing plate precursor for laser engraving, relief printing plate and method for producing relief printing plate
EP2095970A1 (en) 2008-02-29 2009-09-02 Fujifilm Corporation Resin composition for laser engraving, resin printing plate precursor for laser engraving, relief printing plate and method for production of relief printing plate
JP5175582B2 (en) 2008-03-10 2013-04-03 富士フイルム株式会社 Preparation method of lithographic printing plate
JP2009214428A (en) 2008-03-11 2009-09-24 Fujifilm Corp Original plate of lithographic printing plate and lithographic printing method
US7923197B2 (en) 2008-03-25 2011-04-12 Fujifilm Corporation Lithographic printing plate precursor
JP5422146B2 (en) 2008-03-25 2014-02-19 富士フイルム株式会社 Processing solution for preparing a lithographic printing plate and processing method of a lithographic printing plate precursor
JP5020871B2 (en) 2008-03-25 2012-09-05 富士フイルム株式会社 Planographic printing plate manufacturing method
JP2009236942A (en) 2008-03-25 2009-10-15 Fujifilm Corp Planographic printing plate precursor and plate making method of the same
JP5422134B2 (en) 2008-03-25 2014-02-19 富士フイルム株式会社 Automatic development method for immersion lithographic printing plates
JP2009236355A (en) 2008-03-26 2009-10-15 Fujifilm Corp Drying method and device
JP5322575B2 (en) 2008-03-28 2013-10-23 富士フイルム株式会社 Resin composition for laser engraving, image forming material, relief printing plate precursor for laser engraving, relief printing plate, and method for producing relief printing plate
EP2105298B1 (en) 2008-03-28 2014-03-19 FUJIFILM Corporation Negative-working lithographic printing plate precursor and method of lithographic printing using same
JP5305793B2 (en) 2008-03-31 2013-10-02 富士フイルム株式会社 Relief printing plate and method for producing relief printing plate
JP5164640B2 (en) 2008-04-02 2013-03-21 富士フイルム株式会社 Planographic printing plate precursor
EP2110261B1 (en) 2008-04-18 2018-03-28 FUJIFILM Corporation Aluminum alloy plate for lithographic printing plate, ligthographic printing plate support, presensitized plate, method of manufacturing aluminum alloy plate for lithographic printing plate and method of manufacturing lithographic printing plate support
JP5296434B2 (en) 2008-07-16 2013-09-25 富士フイルム株式会社 Master for lithographic printing plate
JP5183380B2 (en) 2008-09-09 2013-04-17 富士フイルム株式会社 Photosensitive lithographic printing plate precursor for infrared laser
JP5398282B2 (en) 2008-09-17 2014-01-29 富士フイルム株式会社 Resin composition for laser engraving, relief printing plate precursor for laser engraving, method for producing relief printing plate, and relief printing plate
JP5449898B2 (en) 2008-09-22 2014-03-19 富士フイルム株式会社 Planographic printing plate precursor and printing method using the same
JP5408942B2 (en) 2008-09-22 2014-02-05 富士フイルム株式会社 Planographic printing plate precursor and plate making method
JP2010102330A (en) 2008-09-24 2010-05-06 Fujifilm Corp Method of preparing lithographic printing plate
JP2010237435A (en) 2009-03-31 2010-10-21 Fujifilm Corp Lithographic printing plate precursor
WO2011037005A1 (en) 2009-09-24 2011-03-31 富士フイルム株式会社 Lithographic printing original plate
US8828648B2 (en) 2010-02-17 2014-09-09 Fujifilm Corporation Method for producing a planographic printing plate
EP2365389B1 (en) 2010-03-08 2013-01-16 Fujifilm Corporation Positive-working lithographic printing plate precursor for infrared laser and process for making lithographic printing plate
EP2366546B1 (en) 2010-03-18 2013-11-06 FUJIFILM Corporation Process for making lithographic printing plate and lithographic printing plate
US8846300B2 (en) 2010-03-31 2014-09-30 Fujifilm Corporation Developer for processing lithographic printing plate precursor, method for manufacturing lithographic printing plate by using the developer, and printing method
JP5286350B2 (en) 2010-12-28 2013-09-11 富士フイルム株式会社 Planographic printing plate precursor, plate making method thereof, and planographic printing method thereof
JP5301015B2 (en) 2011-07-25 2013-09-25 富士フイルム株式会社 Photosensitive lithographic printing plate precursor and method for preparing lithographic printing plate
JP5255100B2 (en) 2011-07-29 2013-08-07 富士フイルム株式会社 Laser engraving type flexographic printing plate precursor and manufacturing method thereof, and flexographic printing plate and plate making method thereof
JP5438074B2 (en) 2011-08-12 2014-03-12 富士フイルム株式会社 Method for producing flexographic printing plate precursor for laser engraving
JP5624003B2 (en) 2011-09-13 2014-11-12 富士フイルム株式会社 Planographic printing plate manufacturing method and planographic printing plate
EP2757417B1 (en) 2011-09-15 2016-05-25 FUJIFILM Corporation Method for recycling wastewater produced by plate-making process
JP5690696B2 (en) 2011-09-28 2015-03-25 富士フイルム株式会社 Planographic printing plate making method
IN2014CN03280A (en) 2011-11-04 2015-07-03 Fujifilm Corp
JP5490168B2 (en) 2012-03-23 2014-05-14 富士フイルム株式会社 Planographic printing plate precursor and lithographic printing plate preparation method
CN104203588B (en) 2012-03-29 2017-03-08 富士胶片株式会社 Original edition of lithographic printing plate and its printing process
JP5699112B2 (en) 2012-07-27 2015-04-08 富士フイルム株式会社 Planographic printing plate precursor and plate making method
JP5955454B2 (en) 2013-03-14 2016-07-20 富士フイルム株式会社 Concentration method and recycling method of plate making waste liquid
KR102420769B1 (en) 2018-09-20 2022-07-14 후지필름 가부시키가이샤 Curable composition, cured film, infrared transmission filter, laminated body, solid-state image sensor, sensor, and pattern formation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6808857B2 (en) 2001-05-21 2004-10-26 Kodak Polychrome Graphics Llc Negative-working photosensitive composition and negative-working photosensitive lithographic printing plate

Also Published As

Publication number Publication date
JPH0513514B2 (en) 1993-02-22

Similar Documents

Publication Publication Date Title
JPS6259963A (en) Electrophotographic sensitive material
JPS6256971A (en) Electrophotographic sensitive material
JPS58181051A (en) Organic photoconductor
US4956256A (en) Photosensitive member for electrophotography
JPS60163047A (en) Electrophotographic sensitive body
JPS6126904B2 (en)
JPH02214866A (en) Electrophotographic element containing certain anthraquinone derivative as electron transporter
US4663260A (en) Electrophotographic light-sensitive material comprising organic photoconductor and pyrylium sensitizer
JPH01312550A (en) Electrophotographic sensitive body
JPH0515269B2 (en)
JPH0234016B2 (en) DENSHISHASHINYOKANKOTAI
JPS62134652A (en) Electrophotographic sensitive body
US4055421A (en) Sensitizer for photoconductive sensitive material
JPS6394249A (en) Electrophotographic sensitive body
US4137413A (en) 1,3,7-Trinitrophenazine-5-oxide
JPH0150903B2 (en)
JPH05173342A (en) Electrophotographic sensitive body
JPS63282743A (en) Electrophotographic sensitive body
JPS5857101B2 (en) Yuuki Koudou Dentaiyou Zou Kanzai
JPH0248589B2 (en) SHINKINAJISUAZOKAGOBUTSUOYOBISONOSEIZOHO
JPS614765A (en) Novel disazo compound and production thereof
JPH07209887A (en) Electrophotographic photoreceptor
JPH0627705A (en) Electrophotographic photosensitive material
JPH063843A (en) Electrophotographic sensitive body
JPH01147552A (en) Electrophotographic sensitive body

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees