JPS6259470B2 - - Google Patents
Info
- Publication number
- JPS6259470B2 JPS6259470B2 JP55098052A JP9805280A JPS6259470B2 JP S6259470 B2 JPS6259470 B2 JP S6259470B2 JP 55098052 A JP55098052 A JP 55098052A JP 9805280 A JP9805280 A JP 9805280A JP S6259470 B2 JPS6259470 B2 JP S6259470B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- zns
- film
- doped layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000005083 Zinc sulfide Substances 0.000 description 26
- 229910052984 zinc sulfide Inorganic materials 0.000 description 26
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000003449 preventive effect Effects 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9805280A JPS5723279A (en) | 1980-07-16 | 1980-07-16 | Manufacture of pv type infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9805280A JPS5723279A (en) | 1980-07-16 | 1980-07-16 | Manufacture of pv type infrared ray detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5723279A JPS5723279A (en) | 1982-02-06 |
| JPS6259470B2 true JPS6259470B2 (US20030199744A1-20031023-C00003.png) | 1987-12-11 |
Family
ID=14209456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9805280A Granted JPS5723279A (en) | 1980-07-16 | 1980-07-16 | Manufacture of pv type infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5723279A (US20030199744A1-20031023-C00003.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0427865U (US20030199744A1-20031023-C00003.png) * | 1990-07-02 | 1992-03-05 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420445A (en) * | 1993-02-22 | 1995-05-30 | Texas Instruments Incorporated | Aluminum-masked and radiantly-annealed group II-IV diffused region |
| JPH08290793A (ja) * | 1995-02-21 | 1996-11-05 | Marui:Kk | 自転車用ヘッドセットの玉軸受及びこれの取付部の構造 |
-
1980
- 1980-07-16 JP JP9805280A patent/JPS5723279A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0427865U (US20030199744A1-20031023-C00003.png) * | 1990-07-02 | 1992-03-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5723279A (en) | 1982-02-06 |
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