JPS6258595B2 - - Google Patents

Info

Publication number
JPS6258595B2
JPS6258595B2 JP55116946A JP11694680A JPS6258595B2 JP S6258595 B2 JPS6258595 B2 JP S6258595B2 JP 55116946 A JP55116946 A JP 55116946A JP 11694680 A JP11694680 A JP 11694680A JP S6258595 B2 JPS6258595 B2 JP S6258595B2
Authority
JP
Japan
Prior art keywords
period
layer
conductivity type
photoelectric conversion
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55116946A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5742272A (en
Inventor
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55116946A priority Critical patent/JPS5742272A/ja
Publication of JPS5742272A publication Critical patent/JPS5742272A/ja
Publication of JPS6258595B2 publication Critical patent/JPS6258595B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/76Circuitry for compensating brightness variation in the scene by influencing the image signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP55116946A 1980-08-27 1980-08-27 Sensing adjusting system for solidstate image sensor Granted JPS5742272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116946A JPS5742272A (en) 1980-08-27 1980-08-27 Sensing adjusting system for solidstate image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116946A JPS5742272A (en) 1980-08-27 1980-08-27 Sensing adjusting system for solidstate image sensor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61207684A Division JPS62162357A (ja) 1986-09-05 1986-09-05 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS5742272A JPS5742272A (en) 1982-03-09
JPS6258595B2 true JPS6258595B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=14699635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116946A Granted JPS5742272A (en) 1980-08-27 1980-08-27 Sensing adjusting system for solidstate image sensor

Country Status (1)

Country Link
JP (1) JPS5742272A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105777A (ja) * 1982-12-09 1984-06-19 Nippon Kogaku Kk <Nikon> 固体撮像装置

Also Published As

Publication number Publication date
JPS5742272A (en) 1982-03-09

Similar Documents

Publication Publication Date Title
US4589003A (en) Solid state image sensor comprising photoelectric converting film and reading-out transistor
CA1193711A (en) Solid state image sensor
JPH0453149B2 (enrdf_load_stackoverflow)
JPS5822901B2 (ja) 固体撮像装置
JPH0982934A (ja) Ccd固体撮像素子
JP2568231B2 (ja) 電荷移送型固体撮像素子
JPS6258595B2 (enrdf_load_stackoverflow)
US4429330A (en) Infrared matrix using transfer gates
JPS6259514B2 (enrdf_load_stackoverflow)
JPS6161589B2 (enrdf_load_stackoverflow)
JPH02181470A (ja) 固体撮像素子
JPH02194779A (ja) 撮像装置
JPS6258594B2 (enrdf_load_stackoverflow)
JPS58212167A (ja) インタ−ライントランスフア−電荷結合素子
JPS5831670A (ja) 固体撮像装置
US4599637A (en) Solid state imaging device with photoconductive layer
EP0065599B1 (en) Infrared imaging system with infrared detector matrix, and method of imaging infrared energy
JPS62162357A (ja) 固体撮像装置
JPS6333353B2 (enrdf_load_stackoverflow)
JPH05336453A (ja) 固体撮像装置
JPS6038070B2 (ja) 固体撮像装置
JPH0783456B2 (ja) 固体撮像装置の駆動方式
JP2898062B2 (ja) 固体撮像装置
JPH0530433A (ja) 撮像装置
JP2001177769A (ja) 固体撮像素子の駆動方法