JPS6257269B2 - - Google Patents
Info
- Publication number
- JPS6257269B2 JPS6257269B2 JP56130422A JP13042281A JPS6257269B2 JP S6257269 B2 JPS6257269 B2 JP S6257269B2 JP 56130422 A JP56130422 A JP 56130422A JP 13042281 A JP13042281 A JP 13042281A JP S6257269 B2 JPS6257269 B2 JP S6257269B2
- Authority
- JP
- Japan
- Prior art keywords
- zno
- cdte
- sintered
- mol
- sintered film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910004613 CdTe Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
本発明は太陽電池の製造方法に関するものであ
る。CdTeは禁制帯巾1.4eVの半導体で、太陽電
池用光吸収材料として最適の禁制帯巾を有し、適
当な窓材料例えばCdSと組合わせてCdS／CdTe
太陽電池として実用化されている。またZnOは禁
制帯巾3.3.eVの半導体で、CdSよりも禁制帯巾が
大きく、CdSよりも太陽光特に短波長側をよく通
すため、太陽電池用窓材料として有望である。そ
こで従来ZnOとCdTeとの組合せによる太陽電池
に関心が寄せられ研究されているが、いずれも単
結晶半導体を用いたもので実用性に乏しい。本発
明は、石油資源の涸渇が予想されエネルギー転換
の必要性に迫られている現状に鑑み、このZnOと
CdTeとの組合せの太陽電池の製造方法に改良を
加へて、充分な変換効率を有し、しかも安価で量
産性に富む太陽電池の製造方法を提案しようとす
るものである。
以下本発明に係る太陽電池の製造方法を実施例
に基いて説明する。先ずZnOの高純度粉末に１〜
10モル％の少量のCdCl2またはZnCl2を加え、こ
れに更に有機粘結剤として例えばプロピレングリ
コールを適量加え、よく混練してペーストを調製
する。このペーストをガラス基板上に薄く塗布す
る。この際スクリーン印刷機を用いるのも一つの
方法である。この塗布膜中の粘結剤を乾燥器で蒸
発させた後、N2雰囲気中で焼成し、Ｎ型ZnO焼結
膜を形成する。焼成温度はCdCl2を混入したとき
は500℃〜700℃の範囲内とし、ZnCl2を混入した
ときは400℃〜650℃の範囲内とする。
従来低抵抗のZnO膜を700℃以下の低温度で焼
結させることは困難であつたが、前記添加物を前
記量加えることによりこの焼結が可能となる。
次いでCdTeの高純度粉末に0.5〜10モル％の少
量のSb2Te3を加え、これに更に有機粘結剤とし
て例えばプロピレングリコールを適量加え、よく
混練してペーストを調製し、このペーストを、ス
クリーン印刷などの方法で前記Ｎ型ZnO焼結膜上
に塗布する。粘結剤を蒸発させた後、N2雰囲気
中500℃〜700℃で焼成し、Ｎ型ZnO焼結膜上にＰ
型CdTe焼結膜を形成する。
こうしてガラス基板上に重畳形成されたＮ型
ZnO焼結膜とＰ型CdTe焼結膜とに夫々オーミツ
ク接触の電極、例えばAl，Teを付着させてでき
上つた太陽電池を第１図に示す。１はガラス基
板、２はＮ型ZnO焼結膜、３はＰ型CdTe焼結
膜、４はCdTe側オーミツク電極、５はZnO側オ
ーミツク電極である。
前記実施例の方法によつて得られた太陽電池の
製造条件と、ガラス基板側からAM1.5，75cmｗ／
cm2の太陽光を入射させたときの変換効率とを第１
表に示す。同表中参考例とあるのは、比較のため
に少くとも一方の焼結膜が融剤の添加量または焼
成温度において実施例に挙げた条件に一致しない
太陽電池の例を示したものである。
The present invention relates to a method for manufacturing a solar cell. CdTe is a semiconductor with a forbidden band width of 1.4 eV, and has the optimum forbidden band width as a light absorption material for solar cells.
It has been put into practical use as a solar cell. Furthermore, ZnO is a semiconductor with a forbidden band width of 3.3 eV, which is larger than that of CdS, and it allows sunlight to pass through, especially in the short wavelength range, better than CdS, making it a promising material for windows in solar cells. Therefore, solar cells based on a combination of ZnO and CdTe have been attracting attention and research, but all of them use single crystal semiconductors and are of little practical use. In view of the current situation where petroleum resources are expected to be depleted and energy conversion is urgently needed, the present invention was developed using ZnO and
By improving the method for manufacturing solar cells in combination with CdTe, we aim to propose a method for manufacturing solar cells that has sufficient conversion efficiency, is inexpensive, and can be easily mass-produced. The method for manufacturing a solar cell according to the present invention will be explained below based on Examples. First, add 1~ to high purity ZnO powder.
A small amount of 10 mol % of CdCl 2 or ZnCl 2 is added, an appropriate amount of an organic binder such as propylene glycol is added thereto, and the mixture is thoroughly kneaded to prepare a paste. This paste is applied thinly onto a glass substrate. One method in this case is to use a screen printing machine. After the binder in this coating film is evaporated in a dryer, it is fired in an N 2 atmosphere to form an N-type ZnO sintered film. The firing temperature is within the range of 500°C to 700°C when CdCl 2 is mixed, and within the range of 400°C to 650°C when ZnCl 2 is mixed. Conventionally, it has been difficult to sinter a low-resistance ZnO film at a low temperature of 700° C. or lower, but this sintering becomes possible by adding the above additive in the above amount. Next, a small amount of Sb 2 Te 3 of 0.5 to 10 mol % is added to the high purity powder of CdTe, and an appropriate amount of propylene glycol as an organic binder is added to this and thoroughly kneaded to prepare a paste. It is applied onto the N-type ZnO sintered film by a method such as screen printing. After evaporating the binder, it is fired at 500°C to 700°C in an N2 atmosphere, and P is deposited on the N-type ZnO sintered film.
Form a type CdTe sintered film. In this way, the N-type
FIG. 1 shows a solar cell produced by attaching ohmic contact electrodes such as Al and Te to a ZnO sintered film and a P-type CdTe sintered film, respectively. 1 is a glass substrate, 2 is an N-type ZnO sintered film, 3 is a P-type CdTe sintered film, 4 is an ohmic electrode on the CdTe side, and 5 is an ohmic electrode on the ZnO side. Manufacturing conditions of the solar cell obtained by the method of the above example and AM1.5, 75cmw/ from the glass substrate side.
The conversion efficiency when sunlight of cm 2 is incident is the first
Shown in the table. Reference examples in the table are examples of solar cells in which at least one of the sintered films does not meet the conditions listed in the examples in terms of the amount of flux added or the firing temperature.
【表】
第１表からも明らかなように参考例の太陽電池
ではいずれも膜の焼結性が不良であるか、あるい
は変換効率が３％にも達しないのに対し、本発明
方法によつて製造された太陽電池は充分実用性の
ある６％以上の高い変換効率を有する。
本発明に係る太陽電池の製造方法によれば、充
分実用性のある高い変換効率を有するものが得ら
れる。しかもＮ型ZnOの焼結膜とＰ型CdTe焼結
膜とが700℃以下の低温で焼結でき、従つてまた
ガラス基板上に重畳焼結でき、消費電力も少く、
製造が容易であり、安価で量産に適する。[Table] As is clear from Table 1, in all of the solar cells of the reference examples, the sinterability of the film was poor or the conversion efficiency did not reach 3%, whereas the method of the present invention The solar cells manufactured using this method have a conversion efficiency as high as 6% or more, which is sufficiently practical. According to the method for manufacturing a solar cell according to the present invention, a solar cell having a sufficiently high conversion efficiency for practical use can be obtained. Moreover, the N-type ZnO sintered film and the P-type CdTe sintered film can be sintered at a low temperature of 700°C or less, and therefore can be superimposed and sintered on a glass substrate, with low power consumption.
It is easy to manufacture, inexpensive and suitable for mass production.
第１図は本発明方法によつて製造された太陽電
池の断面図である。
１……ガラス基板、２……Ｎ型ZnO焼結膜、３
……Ｐ型CdTe焼結膜、４……CdTe側オーミツ
ク電極、５……ZnO側オーミツク電極。
FIG. 1 is a sectional view of a solar cell manufactured by the method of the present invention. 1...Glass substrate, 2...N-type ZnO sintered film, 3
...P-type CdTe sintered film, 4...Ohmic electrode on CdTe side, 5...Ohmic electrode on ZnO side.
Claims (1)
の有機粘結剤を加えて混合したペーストをガラス
基板上に塗布しN2中500℃〜700℃で焼成してＮ
型ZnO焼結膜を形成し、次いでこのZnO焼結膜上
にCdTe粉末に0.5〜10モル％のSb2Te3および適
量の有機粘結剤を加えて混合したペーストを塗布
しN2中500℃〜700℃で焼成してＰ型CdTe焼結膜
を形成し、これら焼結膜に夫々オーミツク電極を
取付けることを特徴とする太陽電池の製造方法。 ２ ZnO粉末に１〜10モル％のZnCl2および適量
の有機粘結剤を加えて混合したペーストをガラス
基板上に塗布しN2中400℃〜650℃で焼成してＮ
型ZnO焼結膜を形成し、次いでこのZnO焼結膜上
にCdTe粉末に0.5〜10モル％のSb2Te3および適
量の有機粘結剤を加えて混合したペーストを塗布
しN2中500℃〜700℃で焼成してＰ型CdTe膜を形
成し、これら焼結膜に夫々オーミツク電極を取付
けることを特徴とする太陽電池の製造方法。[Claims] 1. A paste prepared by adding 1 to 10 mol% of CdCl 2 and an appropriate amount of organic binder to ZnO powder is applied onto a glass substrate and baked at 500°C to 700°C in N 2 . N
A molded ZnO sintered film is formed, and then a paste of CdTe powder mixed with 0.5-10 mol% Sb 2 Te 3 and an appropriate amount of organic binder is applied on this ZnO sintered film and heated at 500°C in N 2 . A method for manufacturing a solar cell characterized by forming P-type CdTe sintered films by firing at 700°C and attaching ohmic electrodes to each of these sintered films. 2. A paste made by adding 1 to 10 mol% ZnCl 2 and an appropriate amount of organic binder to ZnO powder is applied onto a glass substrate, and baked at 400°C to 650°C in N2 .
A molded ZnO sintered film is formed, and then a paste of CdTe powder mixed with 0.5-10 mol% Sb 2 Te 3 and an appropriate amount of organic binder is applied on this ZnO sintered film and heated at 500°C in N 2 . A method for manufacturing a solar cell characterized by forming P-type CdTe films by firing at 700°C and attaching ohmic electrodes to each of these sintered films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56130422A JPS5831584A (en) | 1981-08-19 | 1981-08-19 | Manufacture of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56130422A JPS5831584A (en) | 1981-08-19 | 1981-08-19 | Manufacture of solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5831584A JPS5831584A (en) | 1983-02-24 |
| JPS6257269B2 true JPS6257269B2 (en) | 1987-11-30 |
Family
ID=15033863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56130422A Granted JPS5831584A (en) | 1981-08-19 | 1981-08-19 | Manufacture of solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831584A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4612411A (en) * | 1985-06-04 | 1986-09-16 | Atlantic Richfield Company | Thin film solar cell with ZnO window layer |
| DE102005047907A1 (en) * | 2005-10-06 | 2007-04-12 | Basf Ag | Photovoltaic cell with a photovoltaically active semiconductor material contained therein |
-
1981
- 1981-08-19 JP JP56130422A patent/JPS5831584A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5831584A (en) | 1983-02-24 |
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