JPH053753B2 - - Google Patents
Info
- Publication number
- JPH053753B2 JPH053753B2 JP61045586A JP4558686A JPH053753B2 JP H053753 B2 JPH053753 B2 JP H053753B2 JP 61045586 A JP61045586 A JP 61045586A JP 4558686 A JP4558686 A JP 4558686A JP H053753 B2 JPH053753 B2 JP H053753B2
- Authority
- JP
- Japan
- Prior art keywords
- cdte
- solid solution
- znte
- layer
- solution layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910004613 CdTe Inorganic materials 0.000 claims description 30
- 239000006104 solid solution Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 230000000694 effects Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、特に低照度において高性能で寿命特
性の良好な、ダブル接合をもつ−族太陽電池
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a - group solar cell with a double junction, which has high performance and good life characteristics, especially at low illuminance.
従来の技術
従来、−族太陽電池としては、主に
Cu2-X／CdS接合の光起電力効果を利用したもの
が詳しく調べられてきているが、銅の化合物の不
安定性が原因と考えられる劣化が問題であつた。
また銅の化合物を用いない太陽電池として、
CdS／CdTe接合の光起電力効果を利用したもの
があるが、太陽光変換効率は５〜６％以下であ
る。これはCdS／CdTe接合における結晶格子の
ミスフイツトによつて、接合界面で光励起キヤリ
アの再結合が多く、光電流が小さくなることによ
る。これは、光励起キヤリアの発生量の少ない低
照度における出力特性を大巾に低下させる。
CdTeのホモ接合による太陽電池も試作されてい
るが、表面層の抵抗が高いため現在のところ効率
が低い。一方n+−CdS／p.CdTe接合の間にｎ・
CdTeを挿入したダブル接合を形成することによ
り上記問題点の解決をはかつたものもあるが、
（例えば、特公昭53−4397）製造方法が真空蒸着
法であり、大面積の太陽電池を連続製造できない
等の欠点を有していた。Conventional technology Conventionally, − group solar cells mainly use
The photovoltaic effect of Cu 2-X /CdS junctions has been investigated in detail, but deterioration, which is thought to be caused by the instability of the copper compound, has been a problem.
In addition, as a solar cell that does not use copper compounds,
There are some that utilize the photovoltaic effect of CdS/CdTe junctions, but the solar conversion efficiency is less than 5-6%. This is because the crystal lattice misfit in the CdS/CdTe junction causes more recombination of photoexcited carriers at the junction interface, resulting in a smaller photocurrent. This greatly reduces the output characteristics at low illuminance, where the amount of optically excited carriers generated is small.
Solar cells using CdTe homojunctions have also been prototyped, but their efficiency is currently low due to the high resistance of the surface layer. On the other hand, between n + −CdS/p.CdTe junction
Some attempts have been made to solve the above problems by forming a double junction with CdTe inserted, but
(For example, Japanese Patent Publication No. 53-4397) The manufacturing method used was a vacuum evaporation method, which had drawbacks such as the inability to continuously manufacture large-area solar cells.
発明が解決しようとする問題点
本発明は上記問題点に鑑み、CdS／CdTe接合
における光励起キヤリアの表面結合、および格子
ミスフイツトによる結合界面での再結合を減少さ
せると共に、大面積で安価な光起電力装置を提供
するものである。Problems to be Solved by the Invention In view of the above problems, the present invention reduces surface binding of photoexcited carriers in CdS/CdTe junctions and recombination at the bonding interface due to lattice misfit, and provides a large-area, inexpensive photovoltaic carrier. The present invention provides a power device.
問題点を解決するための手段
上記問題点を解決するために本発明の光起電力
装置は、ｎ−CdS／ｐ−CdTe接合の間にZnTe−
CdTe固溶層を形成し、結合界面での再結合を減
少させると同時に、製造方法にスクリーン印刷及
び焼結工程を用いることを特徴としたものであ
る。Means for Solving the Problems In order to solve the above problems, the photovoltaic device of the present invention has ZnTe-
It is characterized by forming a CdTe solid solution layer to reduce recombination at the bonding interface, and at the same time using screen printing and sintering processes in the manufacturing method.
作 用
本発明は、結合界面での再結合電流の減少によ
り、光起電力効果における開放電圧、短絡電流、
変換効率の飛躍的な改善を可能にするものであ
る。これは、CdS／CdTe界面に正孔の移動度の
高いZnTeの形成と、CdSとCdTeとの格子定数の
違いによる結晶歪をZnTe−CdTe固溶体の形成
によつて減少させているためである。ZnTe−
CdTe固溶層中のZn濃度が、CdS界面からCdTe
界面にむかつて濃度傾配をもつ時、上記効果がさ
らに大きくなる。再結合電流の減少は、発生電流
の少ない低照度で使用する場合、性能を大巾に向
上させ、屋内で使用する電卓等の電源として非常
に重要である。また製造方法から、安価で大面積
の光起電力装置の作製が可能になる。Effect The present invention reduces the open circuit voltage, short circuit current, and
This makes it possible to dramatically improve conversion efficiency. This is because ZnTe with high hole mobility is formed at the CdS/CdTe interface, and crystal strain due to the difference in lattice constant between CdS and CdTe is reduced by the formation of a ZnTe-CdTe solid solution. ZnTe−
The Zn concentration in the CdTe solid solution layer changes from the CdS interface to the CdTe
When there is a concentration gradient towards the interface, the above effect becomes even greater. Reduction of recombination current greatly improves performance when used under low illuminance where little current is generated, and is very important as a power source for calculators and the like used indoors. The manufacturing method also allows for the production of inexpensive, large-area photovoltaic devices.
実施例
以下本発明の一実施例について図面を用いて説
明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
CdSとZnSの混合粉末に融剤として、ZnS量に
よつてCdCl2を10〜30重量％加え、粘結剤として
プロピレングリコールを加え泥状にしたものを図
に示すように、バリウム硼珪酸ガラスからなる基
板１上にスクリーン印刷した後、N2雰囲気中に
おいて650℃〜700℃で90分間焼成することによ
り、CdSとZnSの固溶体Cd（Zn）Ｓ焼結膜２を形
成した。このｎ形Cd（Zn）Ｓ焼結膜２上にCd粉
末、Te粉末そしてCdTe粉末からなる泥状物をス
クリーン印刷し、ベルト焼成法にて、580℃のN2
雰囲気中で約60分間焼結した。この工程により、
Cd（Zn）Ｓ焼結膜２上に、厚さ約1μｍのZnTe−
CdTe固溶層３及びモザイク状のCdTe焼結膜４
が形成された。固溶層中のZn濃度は、Cd（Zn）
Ｓ膜２の界面濃度を最大とし、濃度傾配をもつて
存在しモザイク状CdTe焼結膜中では、検出でき
なかつた。CdTe焼結膜４上に適量のアクセプタ
ー不純物を添加したカーボン膜５によつてCdTe
膜側からのオーミツク電極を取つたCd（Zn）Ｓ焼
結膜２表面にもオーミツク電極６を付けることに
よつて素子を完成した。 Barium borosilicate glass is made by adding 10 to 30% by weight of CdCl 2 as a flux, depending on the amount of ZnS, to a mixed powder of CdS and ZnS, and propylene glycol as a binder to form a slurry, as shown in the figure. A Cd(Zn)S sintered film 2 , which is a solid solution of CdS and ZnS, was formed by screen printing on a substrate 1 consisting of CdS and ZnS and then firing it at 650°C to 700°C for 90 minutes in an N2 atmosphere. A slurry consisting of Cd powder, Te powder, and CdTe powder was screen printed on this n-type Cd(Zn)S sintered film 2, and N 2 at 580°C was applied using a belt firing method.
It was sintered in an atmosphere for about 60 minutes. Through this process,
On the Cd(Zn)S sintered film 2, a ZnTe-
CdTe solid solution layer 3 and mosaic-shaped CdTe sintered film 4
was formed. The Zn concentration in the solid solution layer is Cd(Zn)
The interface concentration of S film 2 was the maximum, and it existed with a concentration gradient and could not be detected in the mosaic-shaped CdTe sintered film. The CdTe sintered film 4 is coated with a carbon film 5 containing an appropriate amount of acceptor impurities.
The device was completed by attaching an ohmic electrode 6 to the surface of the Cd(Zn)S sintered film 2 from which the ohmic electrode was attached from the film side.
発明の効果
以上の説明から明らかなように、本発明は、
CdS／CdTe界面にZnTe−CdTe固溶体を形成す
ることを特徴とし、接合界面での再結合電流を大
巾に減少できた。また製造方法にスクリーン印
刷、焼結工程を用いることによつて、CdTe焼結
膜形成と同時にZnTe−CdTe固溶層を容易に形
成できる。さらには、スクリーン印刷方式にて膜
形成ができ、大面積化が容易である。Effects of the Invention As is clear from the above explanation, the present invention has the following effects:
The feature is that a ZnTe-CdTe solid solution is formed at the CdS/CdTe interface, and the recombination current at the bonding interface can be greatly reduced. Furthermore, by using screen printing and sintering steps in the manufacturing method, a ZnTe-CdTe solid solution layer can be easily formed at the same time as the CdTe sintered film is formed. Furthermore, the film can be formed using a screen printing method, making it easy to increase the area.
図は本発明における光起電装置の概念的な構造
を示す断面図である。
１……ガラス基板、２……Cd（Zn）Ｓ焼結膜、
３……ZnTe−CdTe固溶層、４……CdTe焼結
膜、５……カーボン膜、６……オーミツク電極。
The figure is a sectional view showing the conceptual structure of a photovoltaic device according to the present invention. 1...Glass substrate, 2...Cd(Zn)S sintered film,
3...ZnTe-CdTe solid solution layer, 4...CdTe sintered film, 5...carbon film, 6...ohmic electrode.
Claims (1)
CdTe固溶層があり、さらにZnTe−CdTe固溶層
に接してｎ型導電性を示すCd（Zn）Ｓ半導体層を
有することを特徴とする屋内光用光起電力装置。 ２ ZnTe−CdTe固溶層中のZnの濃度がZnTe−
CdTe固溶層とCd（Zn）Ｓ半導体層との界面で最
大であることを特徴とする特許請求の範囲第１項
記載の屋内光用光起電力装置。 ３ ｎ型導電性を示すCd（Zn）Ｓ半導体層を形成
する工程と、 前記Cd（Zn）Ｓ半導体層上にCd、Teおよび
CdTeを含む泥状物を印刷する工程と、 前記印刷した泥状物を焼成してｎ型Cd（Zn）Ｓ
層上にZnTe−CdTe固溶層およびｐ型CdTe層を
形成する工程とを有することを特徴とする屋内光
用光起電力装置の製造方法。[Claims] 1. ZnTe-
1. A photovoltaic device for indoor lighting, comprising a CdTe solid solution layer and a Cd(Zn)S semiconductor layer exhibiting n-type conductivity in contact with the ZnTe-CdTe solid solution layer. 2 The concentration of Zn in the ZnTe−CdTe solid solution layer is
2. The indoor photovoltaic device according to claim 1, wherein the maximum voltage is at the interface between the CdTe solid solution layer and the Cd(Zn)S semiconductor layer. 3. A step of forming a Cd(Zn)S semiconductor layer exhibiting n-type conductivity, and forming Cd, Te, and
A process of printing a slurry containing CdTe, and firing the printed slurry to produce n-type Cd(Zn)S.
1. A method for producing an indoor photovoltaic device, comprising the steps of forming a ZnTe-CdTe solid solution layer and a p-type CdTe layer on the layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61045586A JPS62203384A (en) | 1986-03-03 | 1986-03-03 | Photovoltaic device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61045586A JPS62203384A (en) | 1986-03-03 | 1986-03-03 | Photovoltaic device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62203384A JPS62203384A (en) | 1987-09-08 |
| JPH053753B2 true JPH053753B2 (en) | 1993-01-18 |
Family
ID=12723449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61045586A Granted JPS62203384A (en) | 1986-03-03 | 1986-03-03 | Photovoltaic device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62203384A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2452370A4 (en) * | 2009-07-10 | 2013-01-02 | First Solar Inc | Photovoltaic devices including zinc |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5038483A (en) * | 1973-08-07 | 1975-04-09 | ||
| JPS61136276A (en) * | 1984-12-06 | 1986-06-24 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film solar cell having thin cadmium sulfide and transparent window layer |
-
1986
- 1986-03-03 JP JP61045586A patent/JPS62203384A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5038483A (en) * | 1973-08-07 | 1975-04-09 | ||
| JPS61136276A (en) * | 1984-12-06 | 1986-06-24 | シーメンス ソーラー インダストリーズ，エル．ピー． | Thin film solar cell having thin cadmium sulfide and transparent window layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62203384A (en) | 1987-09-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |