JPS6257094B2 - - Google Patents

Info

Publication number
JPS6257094B2
JPS6257094B2 JP14648978A JP14648978A JPS6257094B2 JP S6257094 B2 JPS6257094 B2 JP S6257094B2 JP 14648978 A JP14648978 A JP 14648978A JP 14648978 A JP14648978 A JP 14648978A JP S6257094 B2 JPS6257094 B2 JP S6257094B2
Authority
JP
Japan
Prior art keywords
insulating film
etching
substrate
electrode
voltmeter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14648978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5574140A (en
Inventor
Shinpei Iijima
Yoshifumi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14648978A priority Critical patent/JPS5574140A/ja
Publication of JPS5574140A publication Critical patent/JPS5574140A/ja
Publication of JPS6257094B2 publication Critical patent/JPS6257094B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP14648978A 1978-11-29 1978-11-29 Termination detecting method of insulating film etching Granted JPS5574140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14648978A JPS5574140A (en) 1978-11-29 1978-11-29 Termination detecting method of insulating film etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14648978A JPS5574140A (en) 1978-11-29 1978-11-29 Termination detecting method of insulating film etching

Publications (2)

Publication Number Publication Date
JPS5574140A JPS5574140A (en) 1980-06-04
JPS6257094B2 true JPS6257094B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=15408778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14648978A Granted JPS5574140A (en) 1978-11-29 1978-11-29 Termination detecting method of insulating film etching

Country Status (1)

Country Link
JP (1) JPS5574140A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0490490A (ja) * 1990-08-06 1992-03-24 Nippon Steel Corp 電気炉の炉体構造

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879722A (ja) * 1981-11-06 1983-05-13 Fujitsu Ltd プラズマエツチングの制御方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0490490A (ja) * 1990-08-06 1992-03-24 Nippon Steel Corp 電気炉の炉体構造

Also Published As

Publication number Publication date
JPS5574140A (en) 1980-06-04

Similar Documents

Publication Publication Date Title
JP4929347B2 (ja) Pifプロービング構成を用いるプラズマ処理の制御
US6326794B1 (en) Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement
US7061259B2 (en) Inspection method and inspection apparatus
JPS6351501B2 (enrdf_load_stackoverflow)
US4810335A (en) Method for monitoring etching processes
JP2000074862A (ja) 交流加熱によるゼーベック係数の測定方法およびこれに用いる測定用サンプルの構造
JPS6257094B2 (enrdf_load_stackoverflow)
JPH09250979A (ja) ガス検出装置
JPH0831904A (ja) 化学エッチング工程の非接触リアルタイム装置内監視の方法および装置
US3075902A (en) Jet-electrolytic etching and measuring method
JP2002252276A (ja) 自己バイアス測定方法及び装置並びに静電吸着装置
JP2859308B2 (ja) プラズマパラメーターの測定方法
JPH0316776B2 (enrdf_load_stackoverflow)
JPS58171822A (ja) ドライエツチング方法
JPH01119026A (ja) エツチング量の測定方法
RU2777900C2 (ru) Способ диагностики плазмы и зонд ленгмюра с защитным кольцом для его реализации
JPH10154600A (ja) プラズマパラメータ測定装置
JPS61201149A (ja) センサ駆動装置
JPH10303177A (ja) プラズマエッチング装置
JPH1050673A (ja) プラズマエッチングモニター装置及びその方法
RU1822972C (ru) Способ локального контрол удельного сопротивлени полупроводников и устройство дл его осуществлени
JPS6042019B2 (ja) 超音波ワイヤボンデイング装置
JPH01301871A (ja) ドライエッチングの終点検出方法
JPS5952702A (ja) 誘電体膜厚センサ−
JPH04275422A (ja) ドライエッチング装置におけるモニタリング方法