JPS6254958A - Pressure contact type semiconductor device - Google Patents

Pressure contact type semiconductor device

Info

Publication number
JPS6254958A
JPS6254958A JP60193747A JP19374785A JPS6254958A JP S6254958 A JPS6254958 A JP S6254958A JP 60193747 A JP60193747 A JP 60193747A JP 19374785 A JP19374785 A JP 19374785A JP S6254958 A JPS6254958 A JP S6254958A
Authority
JP
Japan
Prior art keywords
electrode
metal post
metal
post electrode
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60193747A
Other languages
Japanese (ja)
Other versions
JPH065686B2 (en
Inventor
Shigeyasu Takatsuchi
高槌　重靖
Shuroku Sakurada
桜田　修六
Tadashi Sakagami
阪上　正
Masafumi Ono
小野　政文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP19374785A priority Critical patent/JPH065686B2/en
Priority to US06/898,597 priority patent/US4775916A/en
Publication of JPS6254958A publication Critical patent/JPS6254958A/en
Publication of JPH065686B2 publication Critical patent/JPH065686B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the positioning accuracy by reducing the size of a portion for inserting a metal post electrode of a resin ring, inserting the electrode, and conducting positioning with respect to an electrode plate by the deformation of the ring. CONSTITUTION:A resin ring 1 is pressed to be spread only by DELTAl1 at a part of the inserting portion of a metal plate 4 due to the influence of the inserting portion of a metal post 5, but since the inserting portion of the metal plate of a resin ring is t1 thick, almost no influence is affected to the portion separated from the post electrode 5. In case of phiB<phiA, phiC<phiD, t1<t2, when the plate 4 of phiA is inserted to the portion of the phiB of the ring 1, since the longitudinal elastic coefficient of the ring 1 is small, the portion of the phiB is spread to the size of the phiA. Further, since t2<t1 is satisfied, the phiC of the portion t2 is spread by the size of (phiA-phiB). Here, if phiC<phiD-(phiA-phiB) is set, when the electrode 5 is inserted, the thickness t2 of the portion of phiC is t2<t1. Thus, only the vicinity of the portion of t2 is deformed. Thus, the positioning accuracy can be improved to improve the reliability.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、ゲートターンオフサイリスタ（以下ＧＴＯサ
イリスタ）、サイリスタ又はトランジスタ等の圧接型半
導体装置に係り、特に半導体基体に隣接され、熱膨張係
数が近似した金属板と金属ポスト電極の位置決めに好適
な樹脂リングに関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a press-contact type semiconductor device such as a gate turn-off thyristor (hereinafter referred to as a GTO thyristor), a thyristor, or a transistor, and particularly relates to a press-contact type semiconductor device such as a gate turn-off thyristor (hereinafter referred to as a GTO thyristor), a thyristor, or a transistor, and in particular a semiconductor device that is adjacent to a semiconductor substrate and has an approximate coefficient of thermal expansion. The present invention relates to a resin ring suitable for positioning a metal plate and a metal post electrode.

〔発明の背景〕[Background of the invention]

一般にトランジスタ、サイリスタ、ＧＴＯサイリスタ等
の半導体基体に金属ポスト電極等を加圧接触する圧接型
半導体装置は電力用として知られている。従来の圧接型
半導体装置をＧＴＯサイリスタを例にして、第３図にて
説明する。樹脂１６により端部を保護された半導体基体
３の両側に、熱膨張係数の近い金属板４，８．９を介し
て、熱。Generally, pressure contact type semiconductor devices such as transistors, thyristors, and GTO thyristors in which a metal post electrode or the like is brought into pressure contact with a semiconductor substrate are known for power use. A conventional pressure contact type semiconductor device will be explained using a GTO thyristor as an example with reference to FIG. Heat is applied to both sides of the semiconductor substrate 3 whose ends are protected by the resin 16 via metal plates 4 and 8.9 having similar coefficients of thermal expansion.

電気伝導率の高い金属ポスト電極５，１０を設け、この
金属ポスト５，１０を加圧圧接する構造となっている。Metal post electrodes 5 and 10 having high electrical conductivity are provided, and the metal posts 5 and 10 are welded together under pressure.

また、ゲート電極環７は金属ポスト電極１０に絶縁体１
１を介して挿入されており、バネ系６により加圧される
構造となっている。このゲート電極環７の金属ポスト電
極１０により半導体用体３のゲート電極部に対応する様
に位置決めされている。ところで金属ポストｉｌｔ極１
０はフランジ１３．セラミック１２．フランジ１４とろ
う材テ固定しており、また他方の金属ポスト電極５はフ
ランジ１５とろう材で固定されている。さらにフランジ
１５と１４は溶接にて固定される為、金属ポスト電極５
と１０は正確に位置決めされる。Furthermore, the gate electrode ring 7 has an insulator 1 on the metal post electrode 10.
1, and is configured to be pressurized by a spring system 6. The metal post electrodes 10 of the gate electrode ring 7 are positioned to correspond to the gate electrode portions of the semiconductor body 3. By the way, metal post ilt pole 1
0 is flange 13. Ceramic 12. The flange 14 is fixed to a brazing material, and the other metal post electrode 5 is fixed to a flange 15 by a brazing material. Furthermore, since the flanges 15 and 14 are fixed by welding, the metal post electrode 5
and 10 are precisely positioned.

半導体基体３は合金された金属板４は樹脂リング１によ
って金属ポスト電極５に位置決めされていめが出来なく
なる事が起る点については配慮されていなかった。なお
この種の装置として関連するものは例えば実開昭５５−
１４４８４５号公報が挙げられる。No consideration was given to the fact that the alloyed metal plate 4 of the semiconductor substrate 3 would be positioned on the metal post electrode 5 by the resin ring 1, resulting in a loss of alignment. A related device of this type is, for example, the Utility Model Application Unexamined in 1983-
144845 is mentioned.

〔発明の目的〕[Purpose of the invention]

本発明の目的は半導体基体が合金された金属板と金属ポ
スト電極を精度良く位置決めして信頼性を向上させた圧
接型半導体装置を提供する事にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a press-contact type semiconductor device in which a metal plate having an alloyed semiconductor substrate and a metal post electrode are precisely positioned to improve reliability.

〔発明の概要〕[Summary of the invention]

本発明は、樹脂リングの金属ポスト電極を挿入される部
分の寸法を小さくして金属ポスト電極を挿入して樹脂リ
ングの変形により電極板と位置を行うものである。In the present invention, the size of the portion of the resin ring into which the metal post electrode is inserted is reduced, the metal post electrode is inserted, and the position with the electrode plate is achieved by deforming the resin ring.

〔発明の実施例〕[Embodiments of the invention]

本発明の実施例を第１図、第２図により説明する。半導
体基体３が合金された金属板４は樹脂リング１により金
属ポスト電極５に位置決めされているが、この時樹脂リ
ング１は金属ポスト５が挿入される部分の影響で金属板
４が挿入される部分の一部がΔＱ１だけ押広げられてい
る。しかし樹脂リングの金属板の挿入される部分は厚み
ｔｚがある為、金属ポスト電極５より離れた部分ではほ
とんど影響が無く、金属板４を押えている。これは第１
図に示す様な構成で、φＢ〈φＡ、φＣくφＤ、ｔｚ＜
ｔｚである場合、樹脂リング１のφＢの部分にφＡの金
属板４を挿入した場合、樹゛脂リング１の縦弾性係数は
小さい為、φＢの部分はφＡの寸法まで広げられる。さ
らにｔｚ＜ｔｔである為、ｔｚの部分のφＣも（φＡ−
φＢ）の寸法だけ広がる。ここでφＣの寸法を金属ポス
ト電極５のφＢに対し、φＣくφＤ−（φＡ−φＢ）と
なる様設定すれば金属ポスト電極５が挿入された時φＣ
はφＢの大きさに広げらる。ところがφＣの部分の厚み
ｔｚはｔｚ＜ｔｔであるので、この影響は１１の部分全
体に及ぼす、結局第２図の様にｔｚの部分付近の変形の
みにとどまる。従って本実施例によれば、樹脂リング１
を効果的に変形させる事により金属板４上の半導体基体
１と金属ポスト電極５を正確に位置決めできる。尚第１
図では部品の構成を示すために、半導体基体３の端部保
護用の樹脂１６は省略している。Embodiments of the present invention will be explained with reference to FIGS. 1 and 2. The metal plate 4 alloyed with the semiconductor substrate 3 is positioned on the metal post electrode 5 by the resin ring 1, but at this time, the metal plate 4 is inserted into the resin ring 1 due to the influence of the part where the metal post 5 is inserted. A part of the portion is expanded by ΔQ1. However, since the portion of the resin ring into which the metal plate is inserted has a thickness tz, there is almost no effect on the portion away from the metal post electrode 5, and the metal plate 4 is held down. This is the first
With the configuration shown in the figure, φB<φA, φC×φD, tz<
tz, when the metal plate 4 of φA is inserted into the portion of φB of the resin ring 1, the portion of φB is expanded to the dimension of φA since the longitudinal elastic modulus of the resin ring 1 is small. Furthermore, since tz<tt, φC in the tz part is also (φA−
It expands by the dimension of φB). Here, if the dimension of φC is set to be φC × φD-(φA-φB) with respect to φB of the metal post electrode 5, when the metal post electrode 5 is inserted, φC
is expanded to the size of φB. However, since the thickness tz of the portion φC satisfies tz<tt, this effect is exerted on the entire portion 11, and as a result, only the deformation near the portion tz occurs as shown in FIG. Therefore, according to this embodiment, the resin ring 1
By effectively deforming the metal post electrode 5, the semiconductor substrate 1 on the metal plate 4 and the metal post electrode 5 can be accurately positioned. The first
In the figure, the resin 16 for protecting the end of the semiconductor substrate 3 is omitted to show the structure of the parts.

絶縁リング１としては４フツ化エチレン樹脂。The insulation ring 1 is made of tetrafluoroethylene resin.

シリコンゴム、の如き材質のものが好適である。A material such as silicone rubber is suitable.

〔発明の効果〕〔Effect of the invention〕

本発明は樹脂リングの変形を積極的に利用して半導体基
体を載置した金属板と金属ポスト電極の位置決め精度を
向上させたものであり、それによって樹脂リング以外の
部品の構造を変える事無く信頼性を向上する事が出来る
。The present invention actively utilizes the deformation of the resin ring to improve the positioning accuracy of the metal plate on which the semiconductor substrate is placed and the metal post electrode, thereby eliminating the need to change the structure of components other than the resin ring. Reliability can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明装置の一実施例を示し、構成部材の寸法
関係を示す断面図、第２図は第１図に示す本発明装置の
具体的状況を示す要部断面図、第３図は従来装置を示す
断面図、第４図は第３図に示す従来装置の問題点を示す
要部断面図である。 １・・・樹脂リング、３・・・半導体基体、４，８．９
・・・金属板、５．１０・・・金属ポスト電極。FIG. 1 shows an embodiment of the device of the present invention, and is a sectional view showing the dimensional relationship of the constituent members, FIG. 2 is a sectional view of essential parts showing a specific situation of the device of the invention shown in FIG. 1, and FIG. 4 is a cross-sectional view showing a conventional device, and FIG. 4 is a cross-sectional view of a main part showing problems with the conventional device shown in FIG. DESCRIPTION OF SYMBOLS 1... Resin ring, 3... Semiconductor base, 4,8.9
...Metal plate, 5.10...Metal post electrode.

Claims (1)

【特許請求の範囲】[Claims] １、半導体基体と該半導体基体の少なくとも一方の面に
設けられた該半導体基体に熱膨張係数が近い金属板と、
該金属板を介して前記半導体基体を圧接する金属ポスト
電極と、前記半導体基板の他方の面に同様の構成で金属
板と金属ポスト電極を有し、少なくとも一方の金属板と
金属ポスト電極は樹脂リングにより位置決めされ両金属
ポスト電極間に圧接力が加えられる構造の圧接型半導体
装置において、樹脂リングが金属ポスト電極に内接する
径は該電極の外径より小さく金属板に内接する径は該金
属板の外径よりわづかに小さく、樹脂リングを拡げて金
属ポスト電極に内接させ変形しても電極板を内接する部
分ではほとんど変形せず、半導体基板を金属ポスト電極
に正しく位置合せする圧接形半導体装置。1. a semiconductor substrate and a metal plate provided on at least one surface of the semiconductor substrate and having a coefficient of thermal expansion close to that of the semiconductor substrate;
A metal post electrode press-contacts the semiconductor substrate through the metal plate, and a metal plate and a metal post electrode in a similar configuration on the other surface of the semiconductor substrate, and at least one of the metal plate and the metal post electrode is made of resin. In a pressure contact type semiconductor device having a structure in which a pressure contact force is applied between both metal post electrodes positioned by a ring, the diameter of the resin ring inscribed in the metal post electrode is smaller than the outer diameter of the electrode, and the diameter inscribed in the metal plate is smaller than the outer diameter of the metal post electrode. Slightly smaller than the outside diameter of the plate, even if the resin ring is expanded and deformed when inscribed in the metal post electrode, the part where the electrode plate is inscribed will hardly deform, and the semiconductor substrate will be correctly aligned with the metal post electrode. shaped semiconductor device.
JP19374785A 1985-09-04 1985-09-04 Pressure contact type semiconductor device Expired - Lifetime JPH065686B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP19374785A JPH065686B2 (en) 1985-09-04 1985-09-04 Pressure contact type semiconductor device
US06/898,597 US4775916A (en) 1985-09-04 1986-08-21 Pressure contact semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19374785A JPH065686B2 (en) 1985-09-04 1985-09-04 Pressure contact type semiconductor device

Publications (2)

Publication Number Publication Date
JPS6254958A true JPS6254958A (en) 1987-03-10
JPH065686B2 JPH065686B2 (en) 1994-01-19

Family

ID=16313137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19374785A Expired - Lifetime JPH065686B2 (en) 1985-09-04 1985-09-04 Pressure contact type semiconductor device

Country Status (2)

Country Link
US (1) US4775916A (en)
JP (1) JPH065686B2 (en)

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* Cited by examiner, † Cited by third party
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JPH01235798A (en) * 1988-03-16 1989-09-20 Hazama Gumi Ltd Concrete mold device
JP2007099373A (en) * 2005-10-06 2007-04-19 Fuji Seal International Inc Overlap package

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US4914812A (en) * 1987-12-04 1990-04-10 General Electric Company Method of self-packaging an IC chip
JP2739970B2 (en) * 1988-10-19 1998-04-15 株式会社東芝 Pressure contact type semiconductor device
JP2502386B2 (en) * 1989-04-11 1996-05-29 富士電機株式会社 Semiconductor device
US5210601A (en) * 1989-10-31 1993-05-11 Kabushiki Kaisha Toshiba Compression contacted semiconductor device and method for making of the same
JPH0831606B2 (en) * 1989-11-17 1996-03-27 株式会社東芝 High power semiconductor device
GB8928492D0 (en) * 1989-12-18 1990-02-21 Westinghouse Brake & Signal Housings for semiconductor devices
EP0520592B1 (en) * 1991-06-27 1995-08-23 Siemens Aktiengesellschaft Hydrogen storage for a plasma switch
US5371386A (en) * 1992-04-28 1994-12-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of assembling the same
JP3259599B2 (en) * 1995-06-20 2002-02-25 三菱電機株式会社 Pressure contact type semiconductor device
JP3319569B2 (en) * 1996-05-31 2002-09-03 株式会社東芝 Pressure contact type semiconductor device
US7132698B2 (en) * 2002-01-25 2006-11-07 International Rectifier Corporation Compression assembled electronic package having a plastic molded insulation ring
EP2447988B1 (en) 2010-11-02 2015-05-06 GE Energy Power Conversion Technology Limited Power electronic device with edge passivation
EP3824497B1 (en) * 2019-07-31 2022-05-04 Hitachi Energy Switzerland AG Power semiconductor device

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JPH01235798A (en) * 1988-03-16 1989-09-20 Hazama Gumi Ltd Concrete mold device
JP2007099373A (en) * 2005-10-06 2007-04-19 Fuji Seal International Inc Overlap package

Also Published As

Publication number Publication date
US4775916A (en) 1988-10-04
JPH065686B2 (en) 1994-01-19

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