JPH0214572A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0214572A
JPH0214572A JP16462488A JP16462488A JPH0214572A JP H0214572 A JPH0214572 A JP H0214572A JP 16462488 A JP16462488 A JP 16462488A JP 16462488 A JP16462488 A JP 16462488A JP H0214572 A JPH0214572 A JP H0214572A
Authority
JP
Japan
Prior art keywords
electrode
gate electrode
main
pressure
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16462488A
Other languages
Japanese (ja)
Inventor
Akio Nakagawa
Tsuneo Ogura
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16462488A priority Critical patent/JPH0214572A/en
Publication of JPH0214572A publication Critical patent/JPH0214572A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent useless pressure from being applied on an element pellet for improving reliability by taking out a first gate electrode on a first main electrode side together with a second gate electrode on a second main electrode side by a bonding wire.
CONSTITUTION: An anode electrode 2 (a first main electrode) and a gate electrode 4 on the anode side (a first gate electrode) so as to surround the above are formed on one main surface of a pellet 1, while a cathode electrode 3 (a second main electrode) and a gate electrode 5 on the cathode side (a second gate electrode) so as to surround the above are formed on the other main surface. Both surfaces of the pellet 1 are held between the pressure-welding posts 6 and 7. Metal electrodes 8 and 9 for a thermal expansion stress buffer are provided between the pressure-welding posts 6, 7 and the anode electrode 2, the cathode electrode 3 of an element. The gate electrode taking-out is performed by both gate electrodes 4, 5 together with the bonding wires 13, 14. These bonding wires 13 and 14 are pulled out through the hollowed-out parts of the pressure-welding posts 6 and 7 while being connected to the sleeves 15 and 16 for gate electrode taking-out for being connected to a wiring of the package outside.
COPYRIGHT: (C)1990,JPO&Japio
JP16462488A 1988-07-01 1988-07-01 Semiconductor device Pending JPH0214572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16462488A JPH0214572A (en) 1988-07-01 1988-07-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16462488A JPH0214572A (en) 1988-07-01 1988-07-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0214572A true JPH0214572A (en) 1990-01-18

Family

ID=15796734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16462488A Pending JPH0214572A (en) 1988-07-01 1988-07-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0214572A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105447B2 (en) 2012-08-28 2015-08-11 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
US9208992B2 (en) 2010-04-26 2015-12-08 Advanced Energy Industries, Inc. Method for controlling ion energy distribution
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
CN105934821A (en) * 2014-01-21 2016-09-07 Abb 技术有限公司 Power semiconductor device
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US10896807B2 (en) 2017-11-17 2021-01-19 Advanced Energy Industries, Inc. Synchronization between an excitation source and a substrate bias supply

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9208992B2 (en) 2010-04-26 2015-12-08 Advanced Energy Industries, Inc. Method for controlling ion energy distribution
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9105447B2 (en) 2012-08-28 2015-08-11 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
JP2017506819A (en) * 2014-01-21 2017-03-09 アーベーベー・テクノロジー・アーゲー Power semiconductor device
CN105934821A (en) * 2014-01-21 2016-09-07 Abb 技术有限公司 Power semiconductor device
US10079214B2 (en) * 2014-01-21 2018-09-18 Abb Schweiz Ag Power semiconductor device
CN105934821B (en) * 2014-01-21 2018-11-23 Abb瑞士股份有限公司 Power semiconductor arrangement
US10896807B2 (en) 2017-11-17 2021-01-19 Advanced Energy Industries, Inc. Synchronization between an excitation source and a substrate bias supply

Similar Documents

Publication Publication Date Title
JP2528991B2 (en) Resin-sealed semiconductor device and lead frame
JP2915892B2 (en) Resin-sealed semiconductor device and method of manufacturing the same
TW349266B (en) Semiconductor device, method of manufacturing the semiconductor device, and method of manufacturing lead frame
JPH04326534A (en) Chip-bonding method for semiconductor device
JPH02285638A (en) Semiconductor device
JPH04324662A (en) Semiconductor package
JPS5662352A (en) Semiconductor integrated circuit device for acoustic amplification circuit
JPS63148646A (en) Semiconductor device
MY123941A (en) Semiconductor device, tab tape for semiconductor device, method of manufacturing the tab tape and method of manufacturing the semiconductor device
MY123034A (en) Semiconductor device and method of fabricating the same
EP0378209A3 (en) Hybrid resin-sealed semiconductor device
JPH02239651A (en) Semiconductor device and mounting method thereof
JPS5963737A (en) Wiring connection method
JPS6010645A (en) Resin-sealed semiconductor device
JPH01238032A (en) Semiconductor device in which copper or copper-alloy metal fine wire is provided at its electrical connection part
JPH01226160A (en) Terminal device for connecting electronic parts and manufacture thereof
US5349233A (en) Lead frame and semiconductor module using the same having first and second islands and three distinct pluralities of leads and semiconductor module using the lead frame
KR900002447A (en) Electrode junction structure of semiconductor device
JPS55118643A (en) Wire bonding process
JPH04214643A (en) Resin-sealed semiconductor device
JPH0249447A (en) Semiconductor device and manufacture thereof
JPH01303730A (en) Mounting structure of semiconductor element and manufacture thereof
JPS60124959A (en) Wire for connecting semiconductor element
JPS63141330A (en) Semiconductor integrated circuit device
JPS6077446A (en) Sealed semiconductor device