JPS625354B2 - - Google Patents
Info
- Publication number
- JPS625354B2 JPS625354B2 JP11647579A JP11647579A JPS625354B2 JP S625354 B2 JPS625354 B2 JP S625354B2 JP 11647579 A JP11647579 A JP 11647579A JP 11647579 A JP11647579 A JP 11647579A JP S625354 B2 JPS625354 B2 JP S625354B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- laser
- width
- active layer
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 48
- 230000003287 optical effect Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 18
- 230000012010 growth Effects 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 125000005842 heteroatom Chemical group 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11647579A JPS5640293A (en) | 1979-09-11 | 1979-09-11 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11647579A JPS5640293A (en) | 1979-09-11 | 1979-09-11 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5640293A JPS5640293A (en) | 1981-04-16 |
| JPS625354B2 true JPS625354B2 (zh) | 1987-02-04 |
Family
ID=14688015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11647579A Granted JPS5640293A (en) | 1979-09-11 | 1979-09-11 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5640293A (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5987888A (ja) * | 1982-11-10 | 1984-05-21 | Sharp Corp | 半導体レ−ザ素子 |
| JPS61135184A (ja) * | 1984-12-05 | 1986-06-23 | Sharp Corp | 半導体レ−ザ装置 |
-
1979
- 1979-09-11 JP JP11647579A patent/JPS5640293A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5640293A (en) | 1981-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4803691A (en) | Lateral superradiance suppressing diode laser bar | |
| JPS6343908B2 (zh) | ||
| JPH0461514B2 (zh) | ||
| JPH05129720A (ja) | 半導体レーザ装置 | |
| JPH0248151B2 (zh) | ||
| JPS625354B2 (zh) | ||
| JPH07283490A (ja) | 光半導体装置 | |
| US4631729A (en) | Semiconductor laser structure | |
| US4633477A (en) | Semiconductor laser with blocking layer | |
| EP0298778B1 (en) | Semiconductor laser devices and methods of making same | |
| JPH0671121B2 (ja) | 半導体レーザ装置 | |
| JPS58225681A (ja) | 半導体レ−ザ素子 | |
| JPH0268975A (ja) | 半導体レーザ | |
| JPS59184585A (ja) | 単一軸モ−ド半導体レ−ザ | |
| JPS59218786A (ja) | 単一軸モ−ド半導体レ−ザ | |
| JPS6234473Y2 (zh) | ||
| JPH01132189A (ja) | 半導体レーザ素子およびその製造方法 | |
| JPS6136719B2 (zh) | ||
| JPH0233988A (ja) | 半導体レーザ | |
| JPH0569318B2 (zh) | ||
| JPH01183184A (ja) | 半導体レーザーとその製造方法 | |
| JPS61137386A (ja) | 二重ヘテロ構造半導体レ−ザ | |
| JPH04370993A (ja) | 半導体レーザ装置 | |
| Hunsperger et al. | Distributed-Feedback Lasers | |
| JPH0260184A (ja) | 半導体レーザ |