JPS6252460B2 - - Google Patents

Info

Publication number
JPS6252460B2
JPS6252460B2 JP54034986A JP3498679A JPS6252460B2 JP S6252460 B2 JPS6252460 B2 JP S6252460B2 JP 54034986 A JP54034986 A JP 54034986A JP 3498679 A JP3498679 A JP 3498679A JP S6252460 B2 JPS6252460 B2 JP S6252460B2
Authority
JP
Japan
Prior art keywords
wafer
aluminum
approximately
chamber
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54034986A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54132169A (en
Inventor
Ii Tonpuson Chaaruzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Burroughs Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burroughs Corp filed Critical Burroughs Corp
Publication of JPS54132169A publication Critical patent/JPS54132169A/ja
Publication of JPS6252460B2 publication Critical patent/JPS6252460B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/12—Anodising more than once, e.g. in different baths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP3498679A 1978-04-03 1979-03-20 Method of forming mutual connecting structure of aluminum on ic chip Granted JPS54132169A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/892,943 US4146440A (en) 1978-04-03 1978-04-03 Method for forming an aluminum interconnect structure on an integrated circuit chip

Publications (2)

Publication Number Publication Date
JPS54132169A JPS54132169A (en) 1979-10-13
JPS6252460B2 true JPS6252460B2 (https=) 1987-11-05

Family

ID=25400751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3498679A Granted JPS54132169A (en) 1978-04-03 1979-03-20 Method of forming mutual connecting structure of aluminum on ic chip

Country Status (2)

Country Link
US (1) US4146440A (https=)
JP (1) JPS54132169A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4358339A (en) * 1978-07-27 1982-11-09 Rockwell International Corporation Method of fabrication of bubble domain device structures
US4456506A (en) * 1982-01-28 1984-06-26 Sperry Corporation Superconducting circuit fabrication
US5679982A (en) * 1993-02-24 1997-10-21 Intel Corporation Barrier against metal diffusion
US6387771B1 (en) * 1999-06-08 2002-05-14 Infineon Technologies Ag Low temperature oxidation of conductive layers for semiconductor fabrication
US6899815B2 (en) * 2002-03-29 2005-05-31 Intel Corporation Multi-layer integrated circuit package

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3827949A (en) * 1972-03-29 1974-08-06 Ibm Anodic oxide passivated planar aluminum metallurgy system and method of producing
JPS5722885B2 (https=) * 1974-02-18 1982-05-15
JPS5731315B2 (https=) * 1974-05-13 1982-07-03
US4045302A (en) * 1976-07-08 1977-08-30 Burroughs Corporation Multilevel metallization process

Also Published As

Publication number Publication date
JPS54132169A (en) 1979-10-13
US4146440A (en) 1979-03-27

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