JPS6251918B2 - - Google Patents

Info

Publication number
JPS6251918B2
JPS6251918B2 JP11718882A JP11718882A JPS6251918B2 JP S6251918 B2 JPS6251918 B2 JP S6251918B2 JP 11718882 A JP11718882 A JP 11718882A JP 11718882 A JP11718882 A JP 11718882A JP S6251918 B2 JPS6251918 B2 JP S6251918B2
Authority
JP
Japan
Prior art keywords
silicon
ribbon
raw material
temperature part
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11718882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS598688A (ja
Inventor
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11718882A priority Critical patent/JPS598688A/ja
Publication of JPS598688A publication Critical patent/JPS598688A/ja
Priority to JP28473186A priority patent/JPS62153187A/ja
Publication of JPS6251918B2 publication Critical patent/JPS6251918B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11718882A 1982-07-06 1982-07-06 薄膜結晶の製造方法 Granted JPS598688A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11718882A JPS598688A (ja) 1982-07-06 1982-07-06 薄膜結晶の製造方法
JP28473186A JPS62153187A (ja) 1982-07-06 1986-11-28 薄膜結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11718882A JPS598688A (ja) 1982-07-06 1982-07-06 薄膜結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP28473186A Division JPS62153187A (ja) 1982-07-06 1986-11-28 薄膜結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS598688A JPS598688A (ja) 1984-01-17
JPS6251918B2 true JPS6251918B2 (zh) 1987-11-02

Family

ID=14705580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11718882A Granted JPS598688A (ja) 1982-07-06 1982-07-06 薄膜結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS598688A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103025924A (zh) * 2010-05-06 2013-04-03 瓦里安半导体设备公司 利用弹性与浮力从熔化物表面移离片材

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7855087B2 (en) * 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US7816153B2 (en) * 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
US8545624B2 (en) * 2008-06-20 2013-10-01 Varian Semiconductor Equipment Associates, Inc. Method for continuous formation of a purified sheet from a melt
US9567691B2 (en) 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
US7998224B2 (en) * 2008-10-21 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Removal of a sheet from a production apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103025924A (zh) * 2010-05-06 2013-04-03 瓦里安半导体设备公司 利用弹性与浮力从熔化物表面移离片材
CN103025924B (zh) * 2010-05-06 2016-04-06 瓦里安半导体设备公司 利用弹性与浮力从熔化物表面移离片材

Also Published As

Publication number Publication date
JPS598688A (ja) 1984-01-17

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