JPS6250918B2 - - Google Patents

Info

Publication number
JPS6250918B2
JPS6250918B2 JP11798580A JP11798580A JPS6250918B2 JP S6250918 B2 JPS6250918 B2 JP S6250918B2 JP 11798580 A JP11798580 A JP 11798580A JP 11798580 A JP11798580 A JP 11798580A JP S6250918 B2 JPS6250918 B2 JP S6250918B2
Authority
JP
Japan
Prior art keywords
bubble
pattern
current
hole
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11798580A
Other languages
Japanese (ja)
Other versions
JPS5744283A (en
Inventor
Haruo Urai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11798580A priority Critical patent/JPS5744283A/en
Publication of JPS5744283A publication Critical patent/JPS5744283A/en
Publication of JPS6250918B2 publication Critical patent/JPS6250918B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0875Organisation of a plurality of magnetic shift registers
    • G11C19/0883Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders

Description

【発明の詳細な説明】 本発明は電流駆動型磁気バブル素子のバブル磁
区転送パタンに関するものである。更に詳しく述
べれば、孔あき二層導体を用いたバブル磁区転送
パタンに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bubble domain transfer pattern of a current-driven magnetic bubble element. More specifically, the present invention relates to a bubble domain transfer pattern using a perforated two-layer conductor.

バブル磁区を保持し得るバブル材料薄片上に、
孔あき導体パタンを二層重ね合せ、各層に位相が
90゜ずれた交流電流を通じ、孔パタンの周囲に生
じる実質的進行波的バイアス磁場によりバブル磁
区を駆動する電流アクセス型二層導体パタンデバ
イス(Dual Conductor Pattern,以下DCPデバ
イスと称す)は、A・H・ボベツク等による1979
年の文献ザ・ベル・システム・テクニカル・ジヤ
ーナル(The Bell System Technical Journal)
第58巻第6号第1453頁から第1540頁で初めて発表
されて以来、バブル駆動の高速性、従来の電流ア
クセス方式にはない低消費電力、微小バブルに対
する適応性のためにきわめて大きな関心が払われ
てきた。
on a bubble material flake capable of retaining bubble magnetic domains;
Two layers of perforated conductor patterns are stacked on top of each other, and each layer has a phase difference.
A current access type dual conductor pattern device (hereinafter referred to as DCP device) that drives a bubble magnetic domain by a substantially traveling wave bias magnetic field generated around a hole pattern through an alternating current shifted by 90 degrees is A. 1979 by H. Bovetzk et al.
The Bell System Technical Journal
Since it was first published in Volume 58, No. 6, pages 1453 to 1540, there has been a great deal of interest due to the high speed of bubble drive, low power consumption not found in conventional current access methods, and adaptability to microbubbles. It has been paid.

その文献では、バブル磁区情報はバブル駆動用
電流方向に垂直なバブル磁区転送方向をもつマイ
ナーループ内に蓄わえられ、一方バブル磁区情報
の書き込み又は読み出しはバブル磁区駆動用電流
方向に平行なバブル磁区転送方向をもつメジヤー
ループを通じて行われるメモリ構成の記載があ
る。更に同文献中ではバブル磁区駆動用電流方向
に平行なバブル磁区転送方向をもつ転送パタンの
例が示されている。しかし乍ら、同文献中の前記
転送パタンを用いただけでは一定の電流印加シー
ケンスでは一方向のバブル転送しか行われないこ
とは明らかであり、同文献記載のメジヤーループ
の如きループ状に、電流方向と平行な転送パタン
を設けることはきわめて困難である。
In that document, bubble domain information is stored in a minor loop with a bubble domain transfer direction perpendicular to the bubble driving current direction, while writing or reading of bubble domain information is carried out in a bubble parallel to the bubble domain driving current direction. There is a description of a memory organization that is performed through a major loop with a magnetic domain transfer direction. Furthermore, the same document shows an example of a transfer pattern having a bubble domain transfer direction parallel to the bubble domain driving current direction. However, it is clear that by using the transfer pattern described in the same document, bubble transfer is only performed in one direction with a constant current application sequence. It is extremely difficult to provide parallel transfer patterns.

本発明の目的は、バブル磁区駆動電流方向に平
行なループ状転送路を容易に形成出来るDCPデ
バイス用転送パタンを提供することにある。
An object of the present invention is to provide a transfer pattern for a DCP device that can easily form a loop-shaped transfer path parallel to the bubble domain drive current direction.

以下に図面を用いて本発明を詳しく説明する。
第1図は前記文献に記載されている、電流方向と
平行なバブル磁区転送方向を実現する従来の
DCPデバイスの転送パタンである。バブル磁区
駆動用の第1の導体層1には矢印31で示す電流
J1方向に垂直に長手方向をもつ孔パタン11,1
2等が設けられている。バブル駆動用の第2の導
体層2には矢印32で示す電流J2方向に垂直な長
手方向をもつ孔パタン21,13等が設けられて
いる。
The present invention will be explained in detail below using the drawings.
Figure 1 shows the conventional method that realizes the bubble domain transfer direction parallel to the current direction, which is described in the above-mentioned literature.
This is the transfer pattern of the DCP device. A current indicated by an arrow 31 is applied to the first conductor layer 1 for driving the bubble magnetic domain.
Hole pattern 11,1 with longitudinal direction perpendicular to J1 direction
2nd class is provided. The second conductor layer 2 for driving bubbles is provided with hole patterns 21, 13 and the like having a longitudinal direction perpendicular to the direction of current J2 as indicated by an arrow 32.

電流J1、及びJ2がa→b→c→d→a→b→c
→dの如き順序で第1及び第2導体層に印加する
と、電流方向aでパタン11のa0で示す位置を安
定位置とするバブル磁区は電流J1,J2の印加順序
に従つてa0→b0→c0→d0→a1→b1→c1→d1の径路
に従つてその安定位置を移す。すなわちバブル磁
区の転送方向は矢印4で示す方向となり、これは
又電流印加方向31,32と等しい。この従来型
転送パタンは印加電流順序が一定ならバブル磁区
転送方向も一方向である。この従来型転送パタン
を用いてループや往復転送路を形成するために
は、Wに示すパタン幅の2倍以上の幅が必要とな
り、スペース的な無駄が多くなりすぎる欠点をも
つ。
The currents J 1 and J 2 are a→b→c→d→a→b→c
→ When the currents are applied to the first and second conductor layers in the order as shown in d, the bubble magnetic domain whose stable position is the position indicated by a 0 of the pattern 11 in the current direction a becomes a according to the order in which the currents J 1 and J 2 are applied. Shift its stable position along the path 0 →b 0 →c 0 →d 0 →a 1 →b 1 →c 1 →d 1 . That is, the direction of transfer of the bubble domain is the direction shown by arrow 4, which is also equal to the current application directions 31 and 32. In this conventional transfer pattern, if the order of applied current is constant, the bubble domain transfer direction is also unidirectional. In order to form a loop or a reciprocating transfer path using this conventional transfer pattern, a width twice or more of the pattern width shown in W is required, which has the drawback of too much wasted space.

本発明を用いればこの様な欠点を取除いた
DCPデバイスが容易に実現する。
By using the present invention, these drawbacks can be eliminated.
DCP devices are easily realized.

本発明に係るDCPデバイス転送路の転送パタ
ンの特徴は、第1導体の少なくとも一部の孔パタ
ンの長手方向が印加電流方向に対し垂直から少し
傾き、第2導体の孔パタンで前記の傾いた孔パタ
ンに対応する位置に存在する孔パタンの長手方向
が前記孔パタンと逆方向に傾き、それらが互いに
交差し合つていることである。
The transfer pattern of the DCP device transfer path according to the present invention is characterized in that the longitudinal direction of at least a part of the hole pattern of the first conductor is slightly inclined from perpendicular to the applied current direction, and the hole pattern of the second conductor has the above-mentioned inclined direction. The longitudinal direction of the hole patterns existing at the position corresponding to the hole pattern is inclined in the opposite direction to the hole pattern, and they intersect with each other.

次に本発明の第1の実施例を第2図を用いて説
明する。本発明の特徴である互に交差し合つた第
1導体層の孔パタン12及び第2導体層の孔パタ
ン12及び第2導体層の孔パタン22が設けられ
ている。これら孔パタン12及び22の上側近傍
には長手方向が印加電流方向31又は32に垂直
な孔パタン11及び21が、また下側近傍には同
様な孔パタン13,23が設けられている。電流
J1の印加方向がaのとき孔パタン11のa1部が安
定位置であるバブル磁区は、印加電流順序a→b
→c→d→a→b→c→dに従つてa1→b1→c1
d1→a0→b0→c0→d0の如く転送され、矢印41で
示す方向の転送路が交差パタン12,22の上部
に形成される。交差パタン12,22の下部には
同じ印加電流順序に従つてa2→b2→c2→d2→a3
b3→c3→d3の矢印42で示す逆方向の転送路が形
成される。この様に本発明を用いれば往復転送路
が交差した一対の孔パタンをはさむ上下に形成さ
れるため、従来に比べ往復転送路が占めるスペー
スが大幅に節約出来ることになる。
Next, a first embodiment of the present invention will be described using FIG. 2. A feature of the present invention is that the first conductor layer hole pattern 12, the second conductor layer hole pattern 12, and the second conductor layer hole pattern 22 intersect with each other. Hole patterns 11 and 21 whose longitudinal direction is perpendicular to the applied current direction 31 or 32 are provided near the top of these hole patterns 12 and 22, and similar hole patterns 13 and 23 are provided near the bottom. current
When the direction of application of J 1 is a, the bubble magnetic domain where the a 1 part of the hole pattern 11 is at a stable position is the applied current order a→b.
→c→d→a→b→c→d according to a 1 →b 1 →c 1
The data is transferred as d 1 →a 0 →b 0 →c 0 →d 0 , and a transfer path in the direction shown by arrow 41 is formed above the intersecting patterns 12 and 22. At the bottom of the crossing patterns 12 and 22, a 2 → b 2 → c 2 → d 2 → a 3
A transfer path in the opposite direction indicated by the arrow 42 of b 3 →c 3 →d 3 is formed. As described above, when the present invention is used, the reciprocating transfer path is formed above and below the intersecting pair of hole patterns, so that the space occupied by the reciprocating transfer path can be significantly saved compared to the conventional method.

次に本発明の第2の実施例を第3図を用いて説
明する。
Next, a second embodiment of the present invention will be described with reference to FIG.

本実施例においては、本発明に係る交差パタン
は二種類設けられている。
In this embodiment, two types of intersecting patterns according to the present invention are provided.

この種類の違いは、同じ傾きの方向をもつ孔パ
タン11と22、又は孔パタン21と12が異な
る導体層にあることである。同じ種類に属する交
差パタンが印加電流方向に並んでいる。この様な
構成では、印加電流J1及びJ2の印加順序a→b→
c→d→……に従つて、矢印41で示されるバブ
ル磁区転送路a0→b0→c0→d0→……、矢印42で
示されるバブル磁区転送路a1→b1→c1→d1→…
…、矢印43で示されるバブル磁区転送路a2→b2
→c2→d2→……のように転送方向が交互に逆にな
るように配列した転送路群が容易に実現する。
The difference between these types is that the hole patterns 11 and 22 have the same inclination direction, or that the hole patterns 21 and 12 are in different conductor layers. Cross patterns belonging to the same type are lined up in the direction of applied current. In such a configuration, the application order of applied currents J 1 and J 2 is a→b→
According to c→d→..., the bubble magnetic domain transfer path a 0 →b 0 →c 0 →d 0 →... is shown by the arrow 41, and the bubble magnetic domain transfer path a 1 →b 1 →c is shown by the arrow 42. 1 →d 1 →…
..., bubble magnetic domain transfer path a 2 → b 2 indicated by arrow 43
A group of transfer paths arranged so that the transfer directions are alternately reversed as in →c 2 →d 2 →... can be easily realized.

第4図は本発明の第3の実施例を説明する図で
ある。本実施例は、第1の実施例の往復転送路に
コーナー部を設けた180゜折り返えし転送路であ
る。交差した孔パタン12と22の配列の端部に
印加電流方向と垂直な方向の第1導体層の孔パタ
ン15と第2導体層の孔パタン25が一部が重な
るように設けられている。印加電流J1及びJ2の印
加順序a→b→c→d→a→……に従つてバブル
磁区はa0→b0→c0→d0からコーナを形成する電流
方向に垂直な転送パタン部をa1→b1→c1→d1と経
由してa2→b2→c2→d2の如く転送される。
FIG. 4 is a diagram illustrating a third embodiment of the present invention. This embodiment is a 180° turnaround transfer path in which a corner portion is provided in the reciprocating transfer path of the first embodiment. A hole pattern 15 of the first conductor layer and a hole pattern 25 of the second conductor layer in a direction perpendicular to the applied current direction are provided at the ends of the array of intersecting hole patterns 12 and 22 so as to partially overlap. According to the application order of applied currents J 1 and J 2 a → b → c → d → a → ..., the bubble magnetic domain is transferred perpendicular to the current direction forming a corner from a 0 → b 0 → c 0 → d 0 . It is transferred as a 2 → b 2 → c 2 → d 2 via the pattern section as a 1 → b 1 → c 1 → d 1 .

即ち矢印4で示す180゜折り返えし転送路が得
られる。本実施例を用いれば、電流方向に平行な
ループ状転送パタンが直ちに実現出る。
That is, a 180° turnaround transfer path shown by arrow 4 is obtained. If this embodiment is used, a loop-shaped transfer pattern parallel to the current direction can be immediately realized.

本発明の第4の実施例を第5図に示す。本実施
例の特徴は本発明に係る交差パタン11,21の
他に印加電流方向に垂直に長手方向をもつ孔パタ
ン12と22、又は13と23が互に重なり合つ
ていることである。パタンが重なり合つていても
交差パタンの存在のために矢印41及び42で示
す往復転送路は充分に形成されている。
A fourth embodiment of the invention is shown in FIG. A feature of this embodiment is that, in addition to the intersecting patterns 11 and 21 according to the present invention, hole patterns 12 and 22 or 13 and 23, each having a longitudinal direction perpendicular to the direction of applied current, overlap each other. Even if the patterns overlap, the reciprocating transfer paths shown by arrows 41 and 42 are sufficiently formed due to the presence of the intersecting patterns.

更に重なり合つたパタンは、前述の文献中で示
されている様な転送路のスイツチングにも使用さ
れる可能性を有している。
Additionally, overlapping patterns have the potential to be used for switching paths as shown in the above-mentioned documents.

第6図に本発明の第5の実施例を示す。本実施
例では印加電流方向31又は32と垂直な方向か
ら傾いた長手方向を第1の導体層1の孔パタン1
1とそれとは逆方向に傾いた第2の導体層2の孔
パタン21とが一端をほぼ共通にして重なり合つ
ている。また、パタン11,21の重なり合つた
側では長手方向が電流方向に対して垂直な第1の
導体層1の孔パタン12と第2の導体層2の孔パ
タン22は互に分離し、傾いたパタン11,21
の重なり合つていない側では導体層1及び2のパ
タン13,23は重なり合つている。この様な構
成においても電流印加順序a→b→c→d→a→
b→……に従つて、矢印41に示すa0→b0→c0
d0→a1→b1の転送路と、これとは逆方向の矢印4
2で示すa2→b2→c2、d2→a3→b3→……の転送路
が得られる。
FIG. 6 shows a fifth embodiment of the present invention. In this embodiment, the hole pattern 1 of the first conductor layer 1 is formed in the longitudinal direction inclined from the direction perpendicular to the applied current direction 31 or 32.
1 and the hole pattern 21 of the second conductor layer 2 tilted in the opposite direction thereof overlap with each other with one end substantially in common. Further, on the side where the patterns 11 and 21 overlap, the hole pattern 12 of the first conductor layer 1 and the hole pattern 22 of the second conductor layer 2, whose longitudinal direction is perpendicular to the current direction, are separated from each other and tilted. Pattern 11, 21
On the non-overlapping sides of the conductor layers 1 and 2, the patterns 13 and 23 overlap. Even in this configuration, the current application order is a→b→c→d→a→
According to b→..., a 0 →b 0 →c 0 shown by arrow 41,
Transfer path d 0 → a 1 → b 1 and arrow 4 in the opposite direction
Transfer paths a 2 →b 2 →c 2 and d 2 →a 3 →b 3 →... shown in 2 are obtained.

本発明の第6の実施例を第7図に示す。本実施
例は、第1の導体層1の印加電流J1に実質的に平
行な端部に設けられた切り込みパタン16及び第
2の導体層2の同様な端部に設けられた切り込み
パタン26が本発明に係る交差パタン11及び2
1と共に往復転送路の一部として用いられている
例である。
A sixth embodiment of the invention is shown in FIG. This embodiment includes a cut pattern 16 provided at an end substantially parallel to the applied current J 1 of the first conductor layer 1 and a cut pattern 26 provided at a similar end of the second conductor layer 2. are intersecting patterns 11 and 2 according to the present invention.
1 is used as part of a round-trip transfer path.

本実施例の動作はこれまでの実施例の説明より
明らかである。本実施例を用いれば更にバブル磁
区の転送路のスペースが節約されるばかりでな
く、導体部間のバブル磁区のトランスフアー部と
してこの切り込みパタンを用いることができる。
The operation of this embodiment is clear from the description of the previous embodiments. By using this embodiment, not only the space for the bubble magnetic domain transfer path can be saved, but also this cut pattern can be used as a bubble magnetic domain transfer section between conductor parts.

以上に述べた様に、本発明を実施することによ
りDCPデバイスにおいて、バブル磁区駆動電流
方向と平行なループ状バブル磁区転送路が容易に
且つスペースの無駄なく実現される。
As described above, by implementing the present invention, a loop-shaped bubble magnetic domain transfer path parallel to the bubble magnetic domain drive current direction can be easily realized in a DCP device without wasting space.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は公知のDCPデバイスの転送路パタン
を示す平面図、第2図は本発明の第1の実施例
を、第3図は本発明の第2の実施例を、第4図は
本発明の第3の実施例を、第5図は本発明の第4
の実施例を、第6図は本発明の第5の実施例を、
第7図は本発明の第6の実施例をそれぞれ示す平
面図である。 1は第1の導体層、2は第2の導体層、11,
12,13,14,15,16は第1の導体層1
にある孔パタン、21,22,23,24,2
5,26は第2の導体層2にある孔パタン、3
1,32は第1、第2の導体層へのバブル磁区駆
動電流印加方法、41,42,43はバブル磁区
転送方向、J1,J2は夫々第1の導体層1、第2の
導体層2に印加する電流、a,b,c,dは印加
電流の方向、a0,b0,c0,d0,a1,b1,c1,d1
a2,b2,c2,d2,a3,b3,c3,d3は電流方向に対
応する磁気バブル安定位置を表わす。
FIG. 1 is a plan view showing a transfer path pattern of a known DCP device, FIG. 2 is a first embodiment of the present invention, FIG. 3 is a second embodiment of the present invention, and FIG. 4 is a plan view of the present invention. The third embodiment of the invention is shown in FIG.
FIG. 6 shows the fifth embodiment of the present invention.
FIG. 7 is a plan view showing a sixth embodiment of the present invention. 1 is a first conductor layer, 2 is a second conductor layer, 11,
12, 13, 14, 15, 16 are the first conductor layer 1
Hole pattern in 21, 22, 23, 24, 2
5 and 26 are hole patterns in the second conductor layer 2;
1 and 32 are bubble domain drive current application methods to the first and second conductor layers, 41, 42, and 43 are bubble domain transfer directions, and J 1 and J 2 are the first and second conductor layers 1 and 2, respectively. Current applied to layer 2, a, b, c, d are directions of applied current, a 0 , b 0 , c 0 , d 0 , a 1 , b 1 , c 1 , d 1 ,
a 2 , b 2 , c 2 , d 2 , a 3 , b 3 , c 3 , and d 3 represent stable magnetic bubble positions corresponding to the current direction.

Claims (1)

【特許請求の範囲】[Claims] 1 バブル磁区を保持し得る磁性材料と、その上
に設けられ孔パタンを有する第1及び第2の導体
層と、これら導体層にバブル磁区駆導用電流を印
加する手段を備えた電流アクセス型磁気バブル素
子において、前記第1の導体層に設けられた少な
くとも一部の孔パタンはその長手方向がバブル磁
区駆動用電流の印加方向と垂直な方向に対し所定
の方向に傾き、前記第2の導体層に設けられた孔
パタンで前記傾いた孔パタンに対応する位置の孔
パタンはその長手方向が前記孔パタンと反対の方
向に傾き、これら対応する一対の孔パタンは互に
パタンの一端又は中間部で交差する様に配されて
いることを特徴とする電流アクセス型バブル磁区
転送路。
1. A current access type comprising a magnetic material capable of holding a bubble magnetic domain, first and second conductor layers provided thereon and having a hole pattern, and means for applying a bubble magnetic domain driving current to these conductor layers. In the magnetic bubble element, the longitudinal direction of at least some of the hole patterns provided in the first conductor layer is inclined in a predetermined direction with respect to the direction perpendicular to the direction of application of the bubble domain driving current, and In the hole pattern provided in the conductor layer, the hole pattern at a position corresponding to the tilted hole pattern has its longitudinal direction inclined in the opposite direction to the hole pattern, and these corresponding pairs of hole patterns are mutually connected to one end of the pattern or A current access type bubble magnetic domain transfer path characterized by being arranged so as to intersect in the middle part.
JP11798580A 1980-08-27 1980-08-27 Transfer path of current access type bubble magnetic domain Granted JPS5744283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11798580A JPS5744283A (en) 1980-08-27 1980-08-27 Transfer path of current access type bubble magnetic domain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11798580A JPS5744283A (en) 1980-08-27 1980-08-27 Transfer path of current access type bubble magnetic domain

Publications (2)

Publication Number Publication Date
JPS5744283A JPS5744283A (en) 1982-03-12
JPS6250918B2 true JPS6250918B2 (en) 1987-10-27

Family

ID=14725157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11798580A Granted JPS5744283A (en) 1980-08-27 1980-08-27 Transfer path of current access type bubble magnetic domain

Country Status (1)

Country Link
JP (1) JPS5744283A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547098B1 (en) * 1983-05-30 1985-07-05 Commissariat Energie Atomique DEVICE FOR PROPAGATING MAGNETIC BUBBLES

Also Published As

Publication number Publication date
JPS5744283A (en) 1982-03-12

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