JPS62502043A - シリコン・カ−バイド半導体デバイスのためのウェ−ハ・ベ−ス - Google Patents

シリコン・カ−バイド半導体デバイスのためのウェ−ハ・ベ−ス

Info

Publication number
JPS62502043A
JPS62502043A JP61503869A JP50386986A JPS62502043A JP S62502043 A JPS62502043 A JP S62502043A JP 61503869 A JP61503869 A JP 61503869A JP 50386986 A JP50386986 A JP 50386986A JP S62502043 A JPS62502043 A JP S62502043A
Authority
JP
Japan
Prior art keywords
substrate
carbide
silicon carbide
wafer base
device wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61503869A
Other languages
English (en)
Japanese (ja)
Inventor
バンシヤー，ロインタン・エフ
パーソン，ジエームス・デイ
スタツフツド，オスカー・エム
Original Assignee
ヒユ−ズ・エアクラフト・カンパニ−
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヒユ−ズ・エアクラフト・カンパニ− filed Critical ヒユ−ズ・エアクラフト・カンパニ−
Publication of JPS62502043A publication Critical patent/JPS62502043A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP61503869A 1985-05-23 1986-04-23 シリコン・カ−バイド半導体デバイスのためのウェ−ハ・ベ−ス Pending JPS62502043A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US737367 1985-05-23
US06/737,367 US4767666A (en) 1985-05-23 1985-05-23 Wafer base for silicon carbide semiconductor device

Publications (1)

Publication Number Publication Date
JPS62502043A true JPS62502043A (ja) 1987-08-13

Family

ID=24963643

Family Applications (2)

Application Number Title Priority Date Filing Date
JP61503869A Pending JPS62502043A (ja) 1985-05-23 1986-04-23 シリコン・カ−バイド半導体デバイスのためのウェ−ハ・ベ−ス
JP61117721A Granted JPS61272922A (ja) 1985-05-23 1986-05-23 半導体装置ウエハ−基板とその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP61117721A Granted JPS61272922A (ja) 1985-05-23 1986-05-23 半導体装置ウエハ−基板とその製造方法

Country Status (6)

Country Link
US (1) US4767666A (enExample)
EP (2) EP0222908A1 (enExample)
JP (2) JPS62502043A (enExample)
AT (1) ATE50886T1 (enExample)
DE (1) DE3669418D1 (enExample)
WO (1) WO1986007194A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2573480B2 (ja) * 1985-11-22 1997-01-22 東芝セラミックス 株式会社 半導体熱処理用治具
US4978567A (en) * 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
US5055319A (en) * 1990-04-02 1991-10-08 The Regents Of The University Of California Controlled high rate deposition of metal oxide films
US5043773A (en) * 1990-06-04 1991-08-27 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates
US5190890A (en) * 1990-06-04 1993-03-02 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same
JPH0529621A (ja) * 1991-07-19 1993-02-05 Rohm Co Ltd 炭化珪素薄膜回路素子とその製造方法
DE4135076A1 (de) * 1991-10-24 1993-04-29 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung
US5492752A (en) * 1992-12-07 1996-02-20 Oregon Graduate Institute Of Science And Technology Substrates for the growth of 3C-silicon carbide
US6650870B2 (en) 1995-12-15 2003-11-18 Innovision Research & Technology Plc Data communication apparatus
DE19803423C2 (de) * 1998-01-29 2001-02-08 Siemens Ag Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor
WO2004102634A2 (en) 2003-04-16 2004-11-25 The Regents Of The University Of California Metal mems devices and methods of making same
US7767498B2 (en) * 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US20070187888A1 (en) * 2005-11-29 2007-08-16 Paul Dures Lottery game card having a Sudoku-themed game

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3176204A (en) * 1960-12-22 1965-03-30 Raytheon Co Device composed of different semiconductive materials
IL63802A (en) * 1981-09-11 1984-10-31 Iscar Ltd Sintered hard metal products having a multi-layer wear-resistant coating

Also Published As

Publication number Publication date
EP0209648A1 (en) 1987-01-28
ATE50886T1 (de) 1990-03-15
JPS61272922A (ja) 1986-12-03
EP0209648B1 (en) 1990-03-07
WO1986007194A1 (en) 1986-12-04
JPH0556851B2 (enExample) 1993-08-20
US4767666A (en) 1988-08-30
DE3669418D1 (de) 1990-04-12
EP0222908A1 (en) 1987-05-27

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