JPS6249680B2 - - Google Patents

Info

Publication number
JPS6249680B2
JPS6249680B2 JP56023144A JP2314481A JPS6249680B2 JP S6249680 B2 JPS6249680 B2 JP S6249680B2 JP 56023144 A JP56023144 A JP 56023144A JP 2314481 A JP2314481 A JP 2314481A JP S6249680 B2 JPS6249680 B2 JP S6249680B2
Authority
JP
Japan
Prior art keywords
write
block
writing
conditions
rated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56023144A
Other languages
Japanese (ja)
Other versions
JPS57138100A (en
Inventor
Kyoshi Matsui
Kunio Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56023144A priority Critical patent/JPS57138100A/en
Publication of JPS57138100A publication Critical patent/JPS57138100A/en
Publication of JPS6249680B2 publication Critical patent/JPS6249680B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Description

【発明の詳細な説明】 本発明は、ユーザで書込み可能な読出し専用メ
モリ(以下、PROMという。)の書込みマージン
測定装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a write margin measuring device for a user-writable read-only memory (hereinafter referred to as PROM).

従来からPROMは、ユーザで書込み可能である
という利便に反し、その信頼性について次のよう
な問題点があつた。
Conventionally, PROMs have the convenience of being writable by the user, but have had the following problems with their reliability.

すなわち、PROMには、その製造条件の変動な
どによる書込み条件の設定余裕度(書込みマージ
ン)の不足などがありうるので、書込み器を用い
て所望のプログラムを書き込む場合、その書込み
条件の設定が適当でないときには、数度の書込み
によつて始めて確実な書込みが行われ、または全
く書込みが行われないというおそれがあつた。
In other words, PROM may have insufficient margin for setting the write conditions (write margin) due to fluctuations in its manufacturing conditions, etc., so when writing the desired program using a writer, it is important to set the write conditions appropriately. Otherwise, there was a fear that reliable writing would be performed only after several writings, or that no writing would be performed at all.

したがつて、そのように書込みマージンが少な
いPROMは、その情報記憶保持特性も悪いものが
多く、それを長期間使用していると、プログラ
ム、データなどの書込み内容が変化するおそれが
あるので、その使用システムのシステムダウンを
もひきおこしかねないというものである。
Therefore, PROMs with such a small write margin often have poor information storage characteristics, and if they are used for a long period of time, there is a risk that the written contents such as programs and data may change. This could even cause a system failure of the system in which it is used.

このように、PROMに対して確実にプログラ
ム、データなどを書込むことは、非常に重要なこ
とであるにもかかわらず、従来は、その書込みマ
ージンまたは書込み特性を容易に測定する手段が
なく、ユーザが書込みマージンを容易、確実に知
ることができなかつたので、そのチエツクに多大
の手数を要し、また、充分な信頼性が得られなか
つた。
Although it is extremely important to reliably write programs, data, etc. to PROM, there has been no means to easily measure the write margin or write characteristics. Since the user could not easily and reliably know the write margin, a great deal of effort was required to check it, and sufficient reliability could not be obtained.

本発明の目的は、上記した従来技術の欠点をな
くし、PROMの書込みを効率化しうるとともに、
あらかじめ書込みマージン不足のものを除去して
信頼性を得るための書込みマージン測定装置を提
供することにある。
An object of the present invention is to eliminate the drawbacks of the above-mentioned prior art, improve the efficiency of PROM writing, and
It is an object of the present invention to provide a write margin measuring device for obtaining reliability by eliminating in advance those with insufficient write margin.

本発明の特徴は、被測定の書込み可能な読出し
専用メモリに対して指定された書込み条件で書込
みを行いうる書込み手段と、これに対し、上記被
測定の書込み可能な読出し専用メモリの一部また
は全部のアドレスを複数ブロツクに分割し、その
分割数に応じて定格書込み条件以下の任意の書込
み条件を指定しうる書込み条件可変設定手段と、
書込みパルスの電圧、電流、幅、立上り時間など
の各書込み条件を、定格書込み条件より弱いもの
から順次に定格書込み条件まで段階的に変化さ
せ、それぞれ、上記被測定の書込み可能な読出し
専用メモリの分割されたブロツクに書込み、その
ブロツクごとの書込み結果を照合し、各ブロツク
ごとの書込み率を算出し、各ブロツクごとの書込
み率より算出した書込みマージンその他必要な結
果を表示または記録しうる表示・記録手段と、こ
れら各手段に係る必要な制御・処理を行いうる制
御・処理手段と含んで構成した書込みマージン測
定装置にある。
The features of the present invention include a writing means capable of writing to the writable read-only memory to be measured under specified write conditions, and a write means capable of writing to the writable read-only memory to be measured; write condition variable setting means capable of dividing all addresses into a plurality of blocks and specifying any write condition below the rated write condition according to the number of blocks;
Each write condition, such as the voltage, current, width, and rise time of the write pulse, was gradually changed from weaker than the rated write condition to the rated write condition, and A display and display system that can write to divided blocks, collate the write results for each block, calculate the write rate for each block, and display or record the write margin and other necessary results calculated from the write rate for each block. The present invention provides a write margin measuring device including a recording means and a control/processing means capable of performing necessary control/processing related to each of these means.

なお、これを詳述すれば、書込み条件、すなわ
ち、書込みパルスの電圧、電流、幅、立上り時間
などを、定格書込み条件より弱いものから順次に
定格書込み条件まで段階的に変化させ、それぞ
れ、被測定のPROMの分割されたブロツクに書込
み、そのブロツクごとに書込み結果を照合し、い
ずれの書込み条件以上で充分な書込みが行われて
いるかを判定することによつて書込みマージンの
測定を可能とするものである。
In addition, to explain this in detail, the write conditions, that is, the voltage, current, width, rise time, etc. of the write pulse, are gradually changed from weaker than the rated write condition to the rated write condition, and each It is possible to measure the write margin by writing to divided blocks of the measurement PROM, comparing the write results for each block, and determining whether sufficient writing has been performed under any of the write conditions. It is something.

以下、本発明の実施例を図に基づいて説明す
る。
Embodiments of the present invention will be described below based on the drawings.

第1図は、本発明に係る書込みマージン測定装
置の一実施例のブロツク図、第2図は、そのフロ
ーチヤートである。
FIG. 1 is a block diagram of an embodiment of a write margin measuring device according to the present invention, and FIG. 2 is a flowchart thereof.

ここで、10は、書込みマージン測定装置、1
1は、制御・処理手段に係る処理装置(MPU)、
12は、同内部メモリ(RAM)、13は、同入出
力制御回路(IOC)、14は、書込み手段に係る
パルス発生器(PG)、15は、書込み条件可変設
定手段に係るキーボード(KBD)、16は、表
示・記録手段に係るデイスプレイ(CRT)、20
は、被測定のPROMである。
Here, 10 is a write margin measuring device, 1
1 is a processing unit (MPU) related to control/processing means;
12 is the internal memory (RAM), 13 is the input/output control circuit (IOC), 14 is a pulse generator (PG) related to the writing means, and 15 is a keyboard (KBD) related to the writing condition variable setting means. , 16 is a display (CRT) related to display/recording means, 20
is the PROM to be measured.

まず、書込みマージンの測定に先だち、PROM
20(例えば、ヒユーズ焼切り形のもの)の一部
または全部のメモリセルを適宜に複数ブロツクに
分割し、その分割数に対応する各書込み条件を設
定し、そのデータを内部メモリ12に記憶させる
(第2図のステツプ)。
First, before measuring the write margin, the PROM
20 (for example, fuse-cut type) is divided into a plurality of blocks as appropriate, each write condition corresponding to the number of divisions is set, and the data is stored in the internal memory 12. (Steps in Figure 2).

この書込み条件データは、例えば、弱書込み、
中程度書込み、定格書込みに応じ、その焼切り電
圧、印加寺間、立上り時間および適用ブロツクの
書込みアドレス指定などからなり、キーボード1
5から入出力制御回路13、処理装置11を介し
て内部メモリ12に記憶される。
This write condition data includes, for example, weak write,
Depending on medium writing and rated writing, the keyboard 1
5, is stored in the internal memory 12 via the input/output control circuit 13 and the processing device 11.

なお、PROM20の書込みを行うべきアドレス
指定は、処理装置11により、乱数などに従つて
ランダムに決定され、そのアドレスは、内部メモ
リ12に記憶されている。
Note that the address designation at which the PROM 20 should be written is randomly determined by the processing device 11 according to random numbers, and the address is stored in the internal memory 12.

また、本測定装置10の制御は、あらかじめ内
部メモリ12に格納された所定のプログラムに従
い、処理装置11によつて行われる。
Further, the measuring device 10 is controlled by the processing device 11 according to a predetermined program stored in the internal memory 12 in advance.

次に、測定動作の開始させるようにキーボード
15で所定の操作(例えば、測定開始ボタンの操
作)が行われると、本装置の測定のための動作が
起動される(ステツプ)。
Next, when a predetermined operation is performed on the keyboard 15 (eg, operation of a measurement start button) to start a measurement operation, the measurement operation of the apparatus is started (step).

この起動操作は必ずしも必要でなく、上記ステ
ツプの終了により、自動的に起動が行われるよ
うにすることもできる。
This activation operation is not necessarily necessary, and activation may be performed automatically upon completion of the above steps.

これにより、処理装置11は、まず、入出力制
御回路13を介し、PROM20の全アドレスにつ
いてデータ読取りを行い、全アドレスが未書込み
のものであるか否かのチエツク(ブランクチエツ
ク)を行う(ステツプ)。
As a result, the processing device 11 first reads data from all addresses of the PROM 20 via the input/output control circuit 13, and checks (blank check) whether or not all addresses are unwritten (step 1). ).

その結果、書込み済のアドレスがあれば、その
アドレス、データなど必要な事項をデイスプレイ
16に表示せしめ、PROM20を他のものに交換
し、または書込み消去などの処置を行いうるよう
にする(ステツプ)。
As a result, if there is an address that has been written, necessary items such as the address and data are displayed on the display 16 so that the PROM 20 can be replaced with another one or write and erase operations can be performed (step). .

全アドレスが未書込みであれば、分割されたブ
ロツクごとに、順次、所定の書込み条件、書込み
アドレスを内部メモリ12から取り出し、それら
を入出力制御回路13を介してパルス発生器14
に指定し、PROM20へ所定条件で書込みを行わ
せる(ステツプ)。
If all addresses have not been written, the predetermined write conditions and write addresses are sequentially retrieved from the internal memory 12 for each divided block and sent to the pulse generator 14 via the input/output control circuit 13.
, and write to the PROM 20 under predetermined conditions (step).

書込み動作が完了すると、処理装置11は、
PROM20の各ブロツクごとに、順次、その各ア
ドレスに対する書込みデータを読み取り、内部メ
モリ12に記憶されている当該アドレスに係るデ
ータと照合し、その書込み率(例えば、書込みが
行われるべきアドレス数に対し、実際に書込みが
行われているアドレス数の比率)その他必要なデ
ータを算出する(ステツプ)。
When the write operation is completed, the processing device 11
For each block of the PROM 20, the write data for each address is sequentially read, compared with the data related to the address stored in the internal memory 12, and the write rate (for example, the number of addresses to which writing should be performed) is , ratio of the number of addresses to which writing is actually being performed) and other necessary data are calculated (step).

次いで、その照合結果(後述の書込みマージン
の値を含む。)を各ブロツクごとにデイスプレイ
16に表示せしめて測定動作を終了する(ステツ
プ)。
Next, the verification results (including the value of the write margin, which will be described later) are displayed on the display 16 for each block, and the measurement operation is completed (step).

以上により、PROM20の各ブロツクごとに書
込み率が判明するので、例えば、定格書込み条件
と定格以下の書込み条件で書込み率が100%とな
るときの焼切り電圧、パルス幅などの差を書込み
マージンの値として判定することができる。
As a result of the above, the write rate can be determined for each block of the PROM 20. For example, the difference in burnout voltage, pulse width, etc. when the write rate becomes 100% under the rated write condition and the write condition below the rated condition is calculated as the write margin. It can be determined as a value.

以上、被測定のPROM20をヒユーズ焼切り形
のものとして説明したが、その他の接合部破壊
形、紫外線消去形のものであつても、書込みを行
うパルス発生器14を適合する書込み形式とする
ことにより、同様に書込みマージンを測定するこ
とができる。
Although the PROM 20 to be measured has been described above as a fuse-burning type, the pulse generator 14 that performs writing should be of an appropriate writing type even if it is of the other type such as a joint destruction type or an ultraviolet erasing type. The write margin can be measured in the same way.

以上、詳細に説明したように、本発明によれ
ば、PROMの書込みマージンを任意的、系統的に
可変として測定しうる装置を実現することができ
るので、メモリのスクリーニングまたは最適書込
み条件を知ることができ、情報記憶保持特性が良
好な確実なプログラム書込みに、ひいては、その
メモリを使用したシステムの信頼性向上に顕著な
効果が得られる。
As described above in detail, according to the present invention, it is possible to realize a device that can arbitrarily and systematically vary and measure the write margin of PROM, so that it is possible to perform memory screening or know the optimum write conditions. This makes it possible to reliably write programs with good information storage retention characteristics, which in turn has a significant effect on improving the reliability of systems using the memory.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明に係る書込みマージン測定装
置の一実施例のブロツク図、第2図は、そのフロ
ーチヤートである。 10…書込みマージン測定装置、11…処理装
置、12…内部メモリ、13…入出力制御回路、
14…パルス発生器、15…キーボード、16…
デイスプレイ、20…PROM。
FIG. 1 is a block diagram of an embodiment of a write margin measuring device according to the present invention, and FIG. 2 is a flowchart thereof. 10...Write margin measuring device, 11...Processing device, 12...Internal memory, 13...I/O control circuit,
14...Pulse generator, 15...Keyboard, 16...
Display, 20...PROM.

Claims (1)

【特許請求の範囲】[Claims] 1 被測定の書込み可能な読出し専用メモリに対
して指定された書込み条件で書込みを行いうる書
込み手段と、これに対し、上記被測定の書込み可
能な読出し専用メモリの一部または全部のアドレ
スを複数ブロツクに分割し、その分割数に応じて
定格書込み条件以下の任意の書込み条件を指定し
うる書込み条件可変設定手段と、書込みパルスの
電圧、電流、幅、立上り時間などの各書込み条件
を、定格書込み条件より弱いものから順次に定格
書込み条件まで段階的に変化させ、それぞれ、上
記被測定の書込み可能な読出し専用メモリの分割
されたブロツクに書込み、そのブロツクごとの書
込み結果を照合し、各ブロツクごとの書込み率を
算出し、各ブロツクごとの書込み率より算出した
書込みマージンその他必要な結果を表示または記
録しうる表示・記録手段と、これら各手段に係る
必要な制御・処理を行いうる制御・処理手段とを
含んで構成したことを特徴とする書込みマージン
測定装置。
1. A writing means capable of writing to the writable read-only memory to be measured under specified write conditions, and a plurality of addresses for part or all of the writable read-only memory to be measured. A write condition variable setting means that can divide the program into blocks and specify any write condition below the rated write condition according to the number of blocks, and write conditions such as the voltage, current, width, and rise time of the write pulse can be set according to the rated write condition. Gradually change the write conditions from weaker to rated write conditions, write to the divided blocks of the above-mentioned writable read-only memory under test, compare the write results for each block, and write to each block. A display/recording means capable of calculating the write rate for each block and displaying or recording the write margin calculated from the write rate for each block and other necessary results, and a control/recording means capable of performing necessary control/processing related to each of these means. 1. A write margin measuring device comprising a processing means.
JP56023144A 1981-02-20 1981-02-20 Write margin measuring device Granted JPS57138100A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56023144A JPS57138100A (en) 1981-02-20 1981-02-20 Write margin measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56023144A JPS57138100A (en) 1981-02-20 1981-02-20 Write margin measuring device

Publications (2)

Publication Number Publication Date
JPS57138100A JPS57138100A (en) 1982-08-26
JPS6249680B2 true JPS6249680B2 (en) 1987-10-20

Family

ID=12102364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56023144A Granted JPS57138100A (en) 1981-02-20 1981-02-20 Write margin measuring device

Country Status (1)

Country Link
JP (1) JPS57138100A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190617B1 (en) 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system

Also Published As

Publication number Publication date
JPS57138100A (en) 1982-08-26

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