JPS6249239A - Measurement for adhesivity of thin film - Google Patents

Abstract

PURPOSE:To enable the measurement of adhesivity of a metal thin film substrate with a metal plate to be used in the manufacture of a photomask or the like, by arranging an island pattern etching process, a washing process, a counting process and the like. CONSTITUTION:First, an island pattern is etched into a thin film to be measured on a metal plate. An automatic appearance inspecting device is used to inspect I a sample mask containing the thin film being inspected to check for the initial number of patterns missed. Then, the sample mask is placed into a proper holder and undergoes an ultrasonic washing by a certain output. In this process, when any poorly adhered part exists in the thin film being measured, the island patterns are missed according to the ultrasonic output. After the washing treatment, an automatic appearance inspecting device inspects II the sample mask to count the number of missed patterns as in the inspection I process. The number of missed patterns obtained in the inspection I process is subtracted from that counted in this process to determine the number of missed patterns by the ultrasonic output. In this manner, the adhesivity of the thin film can be measured.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for measuring the adhesion force of a thin film to a substrate, and in particular is used for photolithography photomasks or reticles used during the manufacturing process of semiconductor integrated circuits. It concerns a method for measuring the adhesion force between a metal thin film on a metal plate and a substrate.

[Conventional technology]

General methods for measuring the adhesion force of thin films include the scratching method, tension method, and peeling method. 13 [Problems to be solved by the invention] However, in the conventional measuring force method mentioned above, special equipment is required when measuring, and Due to the ambiguity in the definition of "wearing force" itself, there are inconveniences such as the numerical value differing depending on the measurement method.

In addition, −[In the dual method, thin films for semiconductor integrated circuits,
In particular, when measuring the adhesion force of a metal thin film to a substrate of a metal plate 1 (used in the production of a photomask for photolithography), the adhesion force is very high. When comparing the adhesion forces of two or more thin films with substrates having slight differences in their properties, it has been impossible to measure the adhesion with precision.

Manufacture of semiconductor integrated circuit] No. 1 used in L culm. It is not a problem that photomasks, especially 1/ζ17 days, are required to be defect-free due to their 1d1 properties, and even during repeated use, defects may occur or increase during the cleaning process, etc. Must not be. For the above reasons, the adhesion force between the thin metal film of the metal plate 1 used and the substrate is an important factor, and there was an urgent need to develop a method for measuring it.

The present invention has been made in view of the disadvantages of the conventional measurement method described above (the target point was that it was impossible to measure with the conventional method). The purpose of this method is to measure the adhesion force of a metal thin film of Metalp 1/-1- to a substrate, and it provides an effective method especially when measuring subtle differences in adhesive strength between two or more types of thin films. be.

[Means for solving problems]

The present invention provides a method for measuring the adhesion force of a thin film to a substrate, including the steps of etching two fine island patterns on the thin film to be measured; A process of washing the thin film to be measured with etched E-turns and its substrate with water using ultrasonic waves or high-pressure sub-1-no, and treating the islands/turns etched in the thin film to be measured with ultra-sonic or high-pressure streak-1-no. This is a method for measuring the force applied to a thin film, and is characterized by the step of counting before and after.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. ◇First Figure is a process diagram of adhesion force measurement which is an embodiment of the present invention. 1. First, turn the metal plate using the same procedure as turning the photomask. A. Etching islands and mother turns on the 1l11 constant thin film (island pattern etching process). In this embodiment, the island pattern 1 of 2 μm x 2 μm is formed by metal plate l-center portion 64.
Etch to mrn x 60 mm (Figure 2). In order to confirm the initial number of missing 79 turns of the Zannormask containing the thin film to be measured after turning has been completed (if there is no pattern defect in the etching process, the number of missing turns d will be zero), use an automatic visual inspection device to inspect it. (Inspection ■Step) After the inspection I step, the sample mask is placed in a suitable holder and subjected to ultrasonic water washing at a certain output (ultrasonic water washing second step).In this step, weakly adherent parts of the thin film to be measured are If there is, island cutans will be missing depending on the ultrasonic output.

An example of missing island patterns is shown in FIG. 2 is a somewhat missing turn part.

After the ultrasonic water washing treatment, in order to count the number of missing patterns, the pattern is inspected using an automatic visual inspection device in the same way as the inspection I process (Inspection ■ process. From the number of missing parts counted in the inspection ■ process, the number of missing parts in the inspection I process is determined. Subtract the number to get the number of missing turns in the ultrasonic output.

1" Repeat the ultrasonic water washing process and inspection (1) while increasing the thickness one by one, and observe the increase in the number of missing parts. The obtained results are plotted with the ultrasonic output on the horizontal axis and the number of missing turns on the vertical axis to obtain Figure 4. In FIG. 4, film B is a film that has improved the adhesion strength of film A. By using the measuring method according to the present invention, the effect of the improvement can be clearly seen. In the examples, the adhesion forces of two types of thin films to the substrate were comparatively measured, but the same measurements may be performed on three or more types of samples under the same conditions. Although ultrasonic water washing was used in the Ushida embodiment, water washing using high-pressure spray may also be used in the same manner.

〔Effect of the invention〕

(5) By performing the previous strength measurement according to the present invention as described in the above explanations 1 to 1, it was possible to measure the metal thickness of the metal plate 1 used for manufacturing photomasks or redicles, which was impossible in Konto.
The adhesion force between the pattern and the substrate can also be easily and reliably measured.

As mentioned above, it goes without saying that the photomasks used during the manufacturing process of semiconductor integrated circuits are required to be defect-free.
There must be no increase in defects during the cleaning process or the like during repeated use after manufacture. Therefore, the adhesion force between the metal thin film of the metal plate used and the substrate is an important factor, and has the effect of easily and reliably measuring this matter.

[Brief explanation of the drawing]

Fig. 1 is a process diagram for adhesion measurement according to the present invention, Fig. 2 is an enlarged view of the island groove part of the Xanzol mask used in the example, Fig. 3 is a diagram showing an example of missing grooves, and Fig. 4 is a diagram showing an example of missing grooves. The figure is a characteristic diagram showing the results of adhesion measurement according to the present invention. 1...2μm x 211m island pattern turn, 2...A (6) Island pattern missing part.

Claims (1)

[Claims] (1) In a method for measuring the adhesion force of a thin film to a substrate,
a step of etching a fine island pattern on a thin film to be measured; a step of washing the thin film to be measured with the etched island pattern and its substrate with water using ultrasonic waves or high-pressure spray; and an island pattern etched in the thin film to be measured. 1. A method for measuring adhesion of a thin film, comprising the steps of counting before and after ultrasonic or high-pressure spray treatment.