JPS6249239A - Measurement for adhesivity of thin film - Google Patents
Measurement for adhesivity of thin filmInfo
- Publication number
- JPS6249239A JPS6249239A JP18884385A JP18884385A JPS6249239A JP S6249239 A JPS6249239 A JP S6249239A JP 18884385 A JP18884385 A JP 18884385A JP 18884385 A JP18884385 A JP 18884385A JP S6249239 A JPS6249239 A JP S6249239A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- patterns
- missed
- measured
- adhesivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄膜の基板との付着力測定方法に関し、特に半
導体集積回路の製造工程中に用いられる写真蝕刻用フォ
トマスク又はレティクルに使用されるメタルプレー ト
の金属薄膜と基板との付着力の測定方法に関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for measuring the adhesion force of a thin film to a substrate, and in particular is used for photolithography photomasks or reticles used during the manufacturing process of semiconductor integrated circuits. It concerns a method for measuring the adhesion force between a metal thin film on a metal plate and a substrate.
一般的な薄膜のイ・1着力の測定力法(/ては引っかき
法、引張り法、引きはがし法等があり、いずれも薄膜に
力をIJOえてはがし、−天−の剥πt(・で要する力
を求めるというものであった13
〔発明が解決しようとする問題点〕
しかしながら、−L述した従来の測定力法では、測定す
る際にそれに応じて特別な装置が必要であったり、「付
着力」自体の定義のあいまいさから、測定方法により数
値が異なる等の不都合がある。General methods for measuring the adhesion force of thin films include the scratching method, tension method, and peeling method. 13 [Problems to be solved by the invention] However, in the conventional measuring force method mentioned above, special equipment is required when measuring, and Due to the ambiguity in the definition of "wearing force" itself, there are inconveniences such as the numerical value differing depending on the measurement method.
加えて、−[二連した方法では半導体集積回路用薄膜、
特に写真蝕刻用フォトマスクまfr−1・J゛l、/デ
ィクルの製造に用いら)するメタルプレー1・の金属薄
膜の基板との付着力を測定する様な場合、′持にイ」着
力に微妙な差のある二種以−ヒの薄膜の基板との付着力
を比較する様な場合には、その精度−1−測定が不可能
であった。In addition, −[In the dual method, thin films for semiconductor integrated circuits,
In particular, when measuring the adhesion force of a metal thin film to a substrate of a metal plate 1 (used in the production of a photomask for photolithography), the adhesion force is very high. When comparing the adhesion forces of two or more thin films with substrates having slight differences in their properties, it has been impossible to measure the adhesion with precision.
半導体集積回路の製造]L稈中に用いらノ1.るフォト
マスク、特1/ζ17デイクルにお・いて1d1その性
質ト無欠陥を要求されることは旨う丑でもなく、繰り返
し使用される間にも洗浄工程中等で欠陥の発生、増加が
あってはならない。以上の理由に」:り用いられるメタ
ルプレー1・の金属薄膜と基板との付着力は重要なファ
クターであり、その測定方法の開発が急務であった。Manufacture of semiconductor integrated circuit] No. 1 used in L culm. It is not a problem that photomasks, especially 1/ζ17 days, are required to be defect-free due to their 1d1 properties, and even during repeated use, defects may occur or increase during the cleaning process, etc. Must not be. For the above reasons, the adhesion force between the thin metal film of the metal plate 1 used and the substrate is an important factor, and there was an urgent need to develop a method for measuring it.
本発明は、前述した従来測定方法の不都合点(【鑑みて
なされたものであり、その目的とするきころは、従来方
法では測定不可能であった)Aトマスク又はレティクル
の製造に用いら扛るメタルプ1/−1−の金属薄膜の基
板との付着力を測定することにあり、特に二種以上の薄
膜間の微妙な旧著力の違いを測定する際に有効な方法を
提供するものである。The present invention has been made in view of the disadvantages of the conventional measurement method described above (the target point was that it was impossible to measure with the conventional method). The purpose of this method is to measure the adhesion force of a metal thin film of Metalp 1/-1- to a substrate, and it provides an effective method especially when measuring subtle differences in adhesive strength between two or more types of thin films. be.
本発明は薄膜の基板との付着力を測定する方法において
、被測定薄膜に二微細なアイランド・ぐターンを蝕刻す
る工程と、前記アイラン1.s ノeターンを蝕刻した
被測定薄膜及びその基板を超音波又は高圧のスブ1ノー
を用いて水洗する工程と、被測定薄膜に蝕刻されたアイ
ランド・やターンを超音波又は高圧スジ1ノー処理の前
後でカウントする工程とを行うことを特徴とゴる薄膜の
付m−力測定ノラ法である。The present invention provides a method for measuring the adhesion force of a thin film to a substrate, including the steps of etching two fine island patterns on the thin film to be measured; A process of washing the thin film to be measured with etched E-turns and its substrate with water using ultrasonic waves or high-pressure sub-1-no, and treating the islands/turns etched in the thin film to be measured with ultra-sonic or high-pressure streak-1-no. This is a method for measuring the force applied to a thin film, and is characterized by the step of counting before and after.
以下本発明の一実施例を図面を用いで説明する◇第1図
り」本発明の一実施例である付着力測定の工程図である
。1ず初めに、フォトマスクのノぐターニングと同様の
手順にでメタルプL/−トの?A 1l11定薄膜にア
イランド・母ターンを蝕刻する(アイランドゞパターン
蝕刻工程)。本実施例では2μm X 2μmのアイラ
ンドパターンーン1をメタルプレー l−中央部64
mrn X 60 mmに蝕刻する(第2図)。−ぐタ
ーニングが終了した被測定薄膜を含むザンノルマスクヲ
初期の79ターン欠落数(蝕刻工程でのパターン不良が
なけ汀ば欠落数dゼロとなる〕を確認するだめに自動外
観検査装置を用いて検査する(検査■工程〕。検査I工
程の後、前記ザンプルマスクを適当な保持体に入れ、あ
る出力で超音波水洗を行う(超音波水洗二「程)。この
工程において被測定薄膜に付着の弱い部分があると、超
音波出力に応じてアイランド・クターンが欠落−する。An embodiment of the present invention will be described below with reference to the drawings. ◇First Figure is a process diagram of adhesion force measurement which is an embodiment of the present invention. 1. First, turn the metal plate using the same procedure as turning the photomask. A. Etching islands and mother turns on the 1l11 constant thin film (island pattern etching process). In this embodiment, the island pattern 1 of 2 μm x 2 μm is formed by metal plate l-center portion 64.
Etch to mrn x 60 mm (Figure 2). In order to confirm the initial number of missing 79 turns of the Zannormask containing the thin film to be measured after turning has been completed (if there is no pattern defect in the etching process, the number of missing turns d will be zero), use an automatic visual inspection device to inspect it. (Inspection ■Step) After the inspection I step, the sample mask is placed in a suitable holder and subjected to ultrasonic water washing at a certain output (ultrasonic water washing second step).In this step, weakly adherent parts of the thin film to be measured are If there is, island cutans will be missing depending on the ultrasonic output.
アイランドパターンの欠落例を第3図に示す。2は・や
ターン欠落部である。An example of missing island patterns is shown in FIG. 2 is a somewhat missing turn part.
超音波水洗処理後、パターンの欠落数をカウントするた
めに検査l工程と同様に自動外観検査装置にて検査する
(検査■工程つ。検査■工程でカウントした欠落数から
検査I工程での欠落数を引算しその超音波出力での・ぐ
ターン欠落数とする。After the ultrasonic water washing treatment, in order to count the number of missing patterns, the pattern is inspected using an automatic visual inspection device in the same way as the inspection I process (Inspection ■ process. From the number of missing parts counted in the inspection ■ process, the number of missing parts in the inspection I process is determined. Subtract the number to get the number of missing turns in the ultrasonic output.
1」ツカを順次増大してゆきながら、超音波水洗工程及
び検査■を繰り返1〜、欠落数の増加の様子を見る。得
られた結果を横軸に超音波出力、縦軸に・ぐターン欠落
数をプロットして第4図を得る。第4図においてB膜は
A膜の付着強度を改善した膜であシ、本発明による測定
方法を用いることにより、改善の効果が一目瞭然となる
。実施例では二種類の薄膜の基板に対する付着力を比較
測定したが、三種以上のサンプルに対しても同一条件の
ものと同様の測定を行えば良い。丑だ実施例では、超音
波水洗を用いたが同様にして高圧スプレーによる水洗を
用いることもできる。1" Repeat the ultrasonic water washing process and inspection (1) while increasing the thickness one by one, and observe the increase in the number of missing parts. The obtained results are plotted with the ultrasonic output on the horizontal axis and the number of missing turns on the vertical axis to obtain Figure 4. In FIG. 4, film B is a film that has improved the adhesion strength of film A. By using the measuring method according to the present invention, the effect of the improvement can be clearly seen. In the examples, the adhesion forces of two types of thin films to the substrate were comparatively measured, but the same measurements may be performed on three or more types of samples under the same conditions. Although ultrasonic water washing was used in the Ushida embodiment, water washing using high-pressure spray may also be used in the same manner.
(5〕
以上説明1〜だように本発明による旧著力測定を行うこ
とにより、今斗で不可能であったフォトマスク又はレデ
ィクルの製造に用いられるメタルプレー1・の金属薄j
摸と基板との付着力の測定も容易にしかも確実に行うこ
とができる。(5) By performing the previous strength measurement according to the present invention as described in the above explanations 1 to 1, it was possible to measure the metal thickness of the metal plate 1 used for manufacturing photomasks or redicles, which was impossible in Konto.
The adhesion force between the pattern and the substrate can also be easily and reliably measured.
既述のごとく、半導体集積回路の製造工朽゛中に用いら
れるフォトマスク、7持にし・ディクルにおいては、そ
の性質−ヒ無欠陥を要求されることはいうまでもなく、
製造後繰り返j〜使用される間にも洗浄工程中等で欠陥
の増加があってはならない。従って用いられるメタルプ
レートの金属薄膜と基板との付着力は重要なファクター
であり、本事項を容易に確実に測定できる効果を有する
ものである。As mentioned above, it goes without saying that the photomasks used during the manufacturing process of semiconductor integrated circuits are required to be defect-free.
There must be no increase in defects during the cleaning process or the like during repeated use after manufacture. Therefore, the adhesion force between the metal thin film of the metal plate used and the substrate is an important factor, and has the effect of easily and reliably measuring this matter.
第1図は本発明てよる付着力測定の工程図、第2図は実
施例で用いたザンゾルマスクのアイランド・ぐターン部
の拡大図、第3図は・ぐターン欠落例を示す図、第4図
は本発明による付着力測定の結果を示す特性図である。
1・・・2μm X 211mのアイラントノぐターン
、2・・・ア(6〕
イランドパターン欠落部。Fig. 1 is a process diagram for adhesion measurement according to the present invention, Fig. 2 is an enlarged view of the island groove part of the Xanzol mask used in the example, Fig. 3 is a diagram showing an example of missing grooves, and Fig. 4 is a diagram showing an example of missing grooves. The figure is a characteristic diagram showing the results of adhesion measurement according to the present invention. 1...2μm x 211m island pattern turn, 2...A (6) Island pattern missing part.
Claims (1)
被測定薄膜に微細なアイランドパターンを蝕刻する工程
と、前記アイランドパターンを蝕刻した被測定薄膜及び
その基板を超音波又は高圧のスプレーを用いて水洗する
工程と、被測定薄膜に蝕刻されたアイランドパターンを
超音波又は高圧スプレー処理の前後でカウントする工程
とを行うことを特徴とする薄膜の付着力測定方法。(1) In a method for measuring the adhesion force of a thin film to a substrate,
a step of etching a fine island pattern on a thin film to be measured; a step of washing the thin film to be measured with the etched island pattern and its substrate with water using ultrasonic waves or high-pressure spray; and an island pattern etched in the thin film to be measured. 1. A method for measuring adhesion of a thin film, comprising the steps of counting before and after ultrasonic or high-pressure spray treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18884385A JPS6249239A (en) | 1985-08-28 | 1985-08-28 | Measurement for adhesivity of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18884385A JPS6249239A (en) | 1985-08-28 | 1985-08-28 | Measurement for adhesivity of thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6249239A true JPS6249239A (en) | 1987-03-03 |
JPH0448182B2 JPH0448182B2 (en) | 1992-08-06 |
Family
ID=16230809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18884385A Granted JPS6249239A (en) | 1985-08-28 | 1985-08-28 | Measurement for adhesivity of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6249239A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110398457A (en) * | 2019-08-06 | 2019-11-01 | 郑州中科新兴产业技术研究院 | A kind of electrodes of lithium-ion batteries adherency force test method |
-
1985
- 1985-08-28 JP JP18884385A patent/JPS6249239A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110398457A (en) * | 2019-08-06 | 2019-11-01 | 郑州中科新兴产业技术研究院 | A kind of electrodes of lithium-ion batteries adherency force test method |
Also Published As
Publication number | Publication date |
---|---|
JPH0448182B2 (en) | 1992-08-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |