JPH0464041A - Method and apparatus for inspecting defect of pellicle - Google Patents
Method and apparatus for inspecting defect of pellicleInfo
- Publication number
- JPH0464041A JPH0464041A JP17508890A JP17508890A JPH0464041A JP H0464041 A JPH0464041 A JP H0464041A JP 17508890 A JP17508890 A JP 17508890A JP 17508890 A JP17508890 A JP 17508890A JP H0464041 A JPH0464041 A JP H0464041A
- Authority
- JP
- Japan
- Prior art keywords
- light
- pellicle
- film
- pellicle film
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007547 defect Effects 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 16
- 238000002834 transmittance Methods 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 238000007689 inspection Methods 0.000 claims description 9
- 230000004907 flux Effects 0.000 abstract description 10
- 238000005259 measurement Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract 2
- 239000012528 membrane Substances 0.000 description 16
- 239000000428 dust Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000011179 visual inspection Methods 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明はペリクルの欠陥検査方法および装置に関し、特
に、ホトマスクやレチクルに装着されるペリクルの欠陥
を簡便に、しかも高感度で検査することができる方法お
よび装置に関する。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a method and apparatus for inspecting pellicle defects, and particularly to a method and apparatus for inspecting defects in a pellicle attached to a photomask or a reticle. The present invention relates to a method and apparatus capable of doing so.
〈従来の技術〉
ＩＣ，ＬＳＩ等の集積回路の製造において、半導体基板
上に回路パターンを形成するために用いられるホトマス
クやレチクルには、露光されるパターン上に塵埃等の異
物が付着したり、ホトマスクやレチクル上に異物が付着
して露光時に該異物の影がパターン上に投影されたりし
て、製品である集積回路の欠陥の原因となり、製品の歩
留りが悪化するのを防止するため、最近ではべりタルを
装着して露光に供される。<Prior Art> In the manufacture of integrated circuits such as ICs and LSIs, photomasks and reticles used to form circuit patterns on semiconductor substrates are prone to foreign matter such as dust adhering to the exposed patterns. Recently, in order to prevent foreign matter from adhering to a photomask or reticle and casting a shadow on the pattern during exposure, which can cause defects in integrated circuit products and reduce product yields, Then, a lens is attached and exposed.
このペリクルは、通常、ニトロセルロース等の透明性物
質からなるペリクル膜と、該ペリクル膜が上部に張設さ
れた枠とから構成されるものである。 このペリクルを
使用すれば、ホトマスクやレチクル上に異物が付着する
のを防止することができるとともに、仮にペリクル膜上
に異物が付着しても、露光時にパターン上に投影される
異物の影は、パターン上に結像せず、いわゆるピンボケ
の像となるため、外形か２０〜８０μｓ以下の異物によ
る影響は減殺される。This pellicle is usually composed of a pellicle membrane made of a transparent material such as nitrocellulose, and a frame on which the pellicle membrane is stretched. By using this pellicle, it is possible to prevent foreign matter from adhering to the photomask or reticle, and even if foreign matter adheres to the pellicle film, the shadow of the foreign material projected on the pattern during exposure will be Since the image is not formed on the pattern and becomes a so-called out-of-focus image, the influence of foreign matter having a duration of 20 to 80 μs or less is reduced.
しかし、前述の大きさより外形が大きな異物がペリクル
膜に付着したり、ペリクル膜内に埋入していた場合、あ
るいは異物かペリクルの内側面に付着している場合には
、ホトマスクやレチクルにペリクルを装着する時や装着
後、衝撃等の何らかの原因により、異物が落下してホト
マスクやレチクルに付着し、その異物の像がパターン上
に転写されてしまい、ＬＳＩ製造における不良の原因と
なる。However, if a foreign object with a larger external shape than the above-mentioned size adheres to the pellicle membrane, is embedded in the pellicle membrane, or is attached to the inside surface of the pellicle, the pellicle may be attached to the photomask or reticle. During or after mounting, foreign matter may fall due to impact or other causes and adhere to the photomask or reticle, and the image of the foreign matter may be transferred onto the pattern, causing defects in LSI manufacturing.
そこで、ペリクルをホトマスクやレチクルに装着する前
に、ペリクル膜に付着した塵埃、ペリクル膜内に埋入さ
れた塵埃、あるいは膜面の疵等のペリクルの欠陥の有無
を検査するために、ペリクル膜に光を照射して散乱光の
強度を測定する装置が開発されている。Therefore, before attaching the pellicle to a photomask or reticle, in order to inspect the pellicle for defects such as dust attached to the pellicle film, dust embedded in the pellicle film, or flaws on the film surface, the pellicle film is A device has been developed that measures the intensity of scattered light by irradiating it with light.
〈発明が解決しようとする課題〉
しかしながら、これらの散乱光強度の測定による欠陥検
査装置は、ペリクル膜中に存在する異物に対しては感度
が低く、また、異物の形状によって検出感度か異なる等
の欠点がある。<Problems to be Solved by the Invention> However, these defect inspection devices that measure the intensity of scattered light have low sensitivity to foreign matter present in the pellicle film, and the detection sensitivity varies depending on the shape of the foreign matter. There are drawbacks.
そのため、結局、最終的には目視による検査が必要とな
り、この目視による検査でペリクルか汚染されてしまう
おそれがある。Therefore, a visual inspection is ultimately required, and there is a risk that the pellicle may become contaminated during this visual inspection.
そこで本発明の目的は、ペリクル膜に付着した塵埃、ペ
リクル膜内に埋入された塵埃、あるいは膜面の疵等のペ
リクルの欠陥の有無を、簡便に、ペリクルを汚染するこ
となく、高感度で測定することができるペリクルの欠陥
検査方法および装置を提供することにある。Therefore, an object of the present invention is to provide a high-sensitivity method that can easily detect the presence or absence of pellicle defects such as dust attached to the pellicle membrane, dust embedded in the pellicle membrane, or flaws on the membrane surface without contaminating the pellicle. An object of the present invention is to provide a method and apparatus for inspecting pellicle defects that can be measured.
くＨ題を解決するための手段〉
本発明は、前記課題を解決するために、ペリクル膜面に
光を照射し、最小検出欠陥径の５０倍以下のスポット径
で、ペリクルが装着されるホトマスクまたはレチクルに
使用される露光光線と同一の波長の光を検出し、ペリク
ル膜の光透過率を測定し、ペリクル膜の欠陥を検出する
ペリクルの欠陥検査方法を提供するものである。Means for Solving Problems> In order to solve the above problems, the present invention provides a photomask on which a pellicle is attached by irradiating light onto the pellicle film surface with a spot diameter of 50 times or less than the minimum detectable defect diameter. Another object of the present invention is to provide a pellicle defect inspection method that detects light having the same wavelength as the exposure light beam used for the reticle, measures the light transmittance of the pellicle film, and detects defects in the pellicle film.
また、本発明は、前記方法を実施するための装置として
、ペリクル膜に光を照射して該ペリクル膜の欠陥を検査
する装置であって、ペリクル膜に光を照射する光源、ペ
リクル膜上の照射光の検出スポット径を最小検出欠陥径
の５０倍以下となるように調整する集光手段、ペリクル
膜への光の照射位置を調整する光照射位置調整手段およ
びペリクル膜を透過した光の光量を測定する光量測定手
段とを有するペリクルの欠陥検査装置を提供するもので
ある。The present invention also provides an apparatus for carrying out the method, which inspects the pellicle film for defects by irradiating the pellicle film with light, comprising: a light source for irradiating the pellicle film; A light focusing means for adjusting the detection spot diameter of the irradiation light to be 50 times or less than the minimum detectable defect diameter, a light irradiation position adjusting means for adjusting the irradiation position of the light onto the pellicle film, and the amount of light transmitted through the pellicle film. The present invention provides a pellicle defect inspection device having a light amount measuring means for measuring the amount of light.
以下、本発明のペリクルの欠陥検査方法および装置につ
いて、詳細に説明する。Hereinafter, the pellicle defect inspection method and apparatus of the present invention will be described in detail.
本発明の方法は、ペリクル膜面に光を照射し、ペリクル
膜を透過する前と透過後の光の光量を測定して、へりク
ル膜における光の透過率を求め、この透過率によってペ
リクル膜の欠陥を検出することによってペリクルを検査
する方法である。The method of the present invention irradiates the pellicle membrane surface with light, measures the amount of light before and after passing through the pellicle membrane, determines the light transmittance in the pellicle membrane, and uses this transmittance to determine the light transmittance of the pellicle membrane. This is a method of inspecting pellicles by detecting defects in the pellicle.
ペリクル膜に照射される光を検出するスポットは、ペリ
クル膜面上のスポット径で、最小検出欠陥径の５０倍以
下、好ましくは２５倍以下となるように光束調整手段に
よって光束が調整される。 ここで、「最小検出欠陥径
」とは、ホトマスクやレチクル上に落下しても、ＬＳＩ
の製造において不良の原因とならない異物の外径の上限
であり、通常、ペリクルが装着されるホトマスクやレチ
クルの最小線幅の２０％の数値をいう。The light flux of the spot for detecting the light irradiated on the pellicle film is adjusted by the light flux adjusting means so that the spot diameter on the pellicle film surface is 50 times or less, preferably 25 times or less, the minimum detection defect diameter. Here, the "minimum detectable defect diameter" means that even if it falls onto a photomask or reticle, the LSI
This is the upper limit of the outer diameter of foreign matter that does not cause defects in the production of pellicles, and is usually 20% of the minimum line width of the photomask or reticle on which the pellicle is attached.
また、光束調整手段としては、集光レンズ、スリット等
の常用の装置を用いればよい。Further, as the light flux adjusting means, a commonly used device such as a condenser lens or a slit may be used.
照射される光は、ペリクルが装着されるホトマスクやレ
チクルの露光に使用される光と同波長の光が使用される
。 例えば、波長４３６ｎｍ、３６５ｎｍの光を使用す
ればよい。The irradiated light has the same wavelength as the light used to expose the photomask or reticle on which the pellicle is attached. For example, light with a wavelength of 436 nm or 365 nm may be used.
また、光の照射位置および照射位置の個数は、測定対象
であるペリクル膜の面積に応じて適宜選択すればよい。Further, the light irradiation position and the number of irradiation positions may be appropriately selected depending on the area of the pellicle film to be measured.
ペリクル膜への光の照射位置の調整手段としては、光を
レンズ等によって照射位置を移動させる装置を用いても
よいし、また、ペリクルをＸ−Ｙステージ等の移動位置
調整手段に配置し、該移動位置調整手段を用いてもよい
。As means for adjusting the irradiation position of the light onto the pellicle film, a device that moves the irradiation position of the light using a lens or the like may be used, or the pellicle may be placed on a moving position adjustment means such as an X-Y stage, The movement position adjusting means may also be used.
本発明の方法は、ペリクル膜を透過した光の光量を測定
し、光の透過率を求めるものである。The method of the present invention measures the amount of light transmitted through a pellicle film to determine the light transmittance.
光量の測定手段としては、光電子増倍管、フォトダイオ
ード、フォトトランジスター等の常用の装置を、測定す
る光の波長に応じて適宜選択すればよい。As a means for measuring the amount of light, a commonly used device such as a photomultiplier tube, a photodiode, a phototransistor, etc. may be appropriately selected depending on the wavelength of the light to be measured.
以下、本発明について、第１図に概略を示す本発明の装
置の一実施態様に基づいて詳細に説明する。Hereinafter, the present invention will be explained in detail based on one embodiment of the apparatus of the present invention, which is schematically shown in FIG.
第１図において、１は光源、２は集光レンズ、３はベリ
タル、４はＸ−Ｙステージ、および５は光量測定装置を
示す。In FIG. 1, 1 is a light source, 2 is a condensing lens, 3 is Verital, 4 is an XY stage, and 5 is a light amount measuring device.
この装置において、光源１から出射された光６は、集光
レンズ２により収束され、さらに微小投影レンズ７によ
り光束を絞られ、Ｘ−Ｙステージ４上に載置されたペリ
クル３のペリクル＠８に、最小検出欠陥径の５０倍以下
のスポット径の光に調整されて照射される。 ペリクル
膜８を透過した光６ａは、光量測定装置５により光量を
測定され、ペリクル膜８の透過前後の光量の変化から透
過率が求められる。 なお、９はペリクル膜透過後の光
の光束を調整する光束調整手段であり、通常、集光レン
ズが用いられる。 また、この透過率の測定は、ペリク
ル膜の全表面に亘って、あるいは適宜選択された測定点
について行ない、ペリクルの欠陥を検出する。In this device, light 6 emitted from a light source 1 is converged by a condensing lens 2, and further narrowed down by a microprojection lens 7, and a pellicle @ 8 of a pellicle 3 placed on an X-Y stage 4 is condensed by a condenser lens 2. Then, the light is adjusted to have a spot diameter that is 50 times or less than the minimum detectable defect diameter. The amount of light 6a transmitted through the pellicle film 8 is measured by a light amount measuring device 5, and the transmittance is determined from the change in the amount of light before and after passing through the pellicle film 8. Note that 9 is a light flux adjusting means for adjusting the light flux of light after passing through the pellicle film, and a condensing lens is usually used. Further, this transmittance measurement is performed over the entire surface of the pellicle film or at appropriately selected measurement points to detect defects in the pellicle.
本発明の方法および装置において、測定される透過率か
らペリクル膜の欠陥を判定するには、例えば、ペリクル
が使用されるホトマスクの最小線幅が５−である場合、
最小検出欠陥径は、前記の通り、５Ｘ２０／１００＝１
戸となり、この５０倍以下の径、すなわち５０戸以下の
スポット径で、ペリクル膜の全表面に亘フて連続的にあ
るいは適宜選択された測定点について連続的にペリクル
膜透過後の光の光量を測定し、透過率を求め、その透過
率の低下より、欠陥の有無および欠陥の位置を判定すれ
ばよい。In the method and apparatus of the present invention, in order to determine defects in the pellicle film from the measured transmittance, for example, if the minimum line width of the photomask in which the pellicle is used is 5-,
As mentioned above, the minimum detectable defect diameter is 5X20/100=1
The amount of light after passing through the pellicle membrane is measured continuously over the entire surface of the pellicle membrane or at appropriately selected measurement points with a spot diameter of 50 times or less, that is, a spot diameter of 50 or less. The presence or absence of a defect and the position of the defect may be determined based on the decrease in the transmittance.
例えば、以下に示す実験例のようにして、ペリクルの欠
陥の検出および欠陥の位置が測定される。For example, a pellicle defect is detected and the position of the defect is measured as in the experimental example shown below.
（実験例）
波長＋４３６ｒ＋ｍの光を、ペリクル膜面上におけるス
ポット径が１００−φとなるように絞った光束で、ペリ
クル膜面に照射し、ペリクル膜を透過した光を集光レン
ズで集め、スポット径６０ｐφの光束の範囲を１つの測
定点としてサンプリングして、ペリクル膜面の合計１０
箇所について透過率を測定したところ、下記の表１に示
す結果が得られた。(Experiment example) Light with a wavelength of +436r+m is irradiated onto the pellicle film surface with a focused beam so that the spot diameter on the pellicle film surface is 100-φ, and the light that has passed through the pellicle film is collected by a condenser lens. The range of the luminous flux with a spot diameter of 60 pφ was sampled as one measurement point, and a total of 10 points were measured on the pellicle film surface.
When transmittance was measured at the locations, the results shown in Table 1 below were obtained.
表 １
そこで、測定点５を顕微鏡を用いて詳細に調査したとこ
ろ、２０−×１０ｐの塵埃が付着していることが分った
。Table 1 Therefore, when measurement point 5 was investigated in detail using a microscope, it was found that 20-×10 particles of dust were attached.
〈発明の効果〉
本発明のペリクル欠陥検査方法によれば、ペリクル膜に
付着した塵埃、ペリクル膜内に埋入された塵埃、あるい
は膜面の疵等のペリクルの欠陥の有無を簡便に、ペリク
ルを汚染することなく、高感度で測定することができる
。 また、本発明のペリクル欠陥検査装置は、前記方法
を好適に行なうことができるものであり、実用上の価値
が大である。<Effects of the Invention> According to the pellicle defect inspection method of the present invention, the presence or absence of pellicle defects such as dust attached to the pellicle membrane, dust embedded in the pellicle membrane, or flaws on the membrane surface can be easily detected by inspecting the pellicle. can be measured with high sensitivity without contaminating the Furthermore, the pellicle defect inspection apparatus of the present invention can suitably carry out the above method, and has great practical value.
第１図は、本発明のペリクル欠陥検査装置の一実施態様
を説明する概念図である。
符号の説明
１・・・光源、
２・・・集光レンズ、
３・・・ペリクル、
４・・・Ｘ−Ｙステージ、
５・・・光量測定装置、
６．６ａ・・・光、
７・・・微小投影レンズ、
８・・・ペリクル膜、
９・・・光束調整手段
ＦＩＧ、１FIG. 1 is a conceptual diagram illustrating one embodiment of the pellicle defect inspection apparatus of the present invention. Explanation of symbols 1...Light source, 2...Condensing lens, 3...Pellicle, 4...X-Y stage, 5...Light amount measuring device, 6.6a...Light, 7. ...Minute projection lens, 8...Pellicle film, 9...Light flux adjusting means FIG, 1
Claims (2)
０倍以下のスポット径で、ペリクルが装着されるホトマ
スクまたはレチクルに使用される露光光線と同一の波長
の光を検出し、ペリクル膜の光透過率を測定し、ペリク
ル膜の欠陥を検出するペリクルの欠陥検査方法。(1) Irradiate the pellicle film surface with light and
A pellicle that detects light of the same wavelength as the exposure light used for the photomask or reticle on which the pellicle is attached, with a spot diameter of 0 times or less, and measures the light transmittance of the pellicle film to detect defects in the pellicle film. defect inspection method.
検査する装置であって、ペリクル膜に光を照射する光源
、ペリクル膜上の照射光の検出スポット径を最小検出欠
陥径の５０倍以下となるように調整する集光手段、ペリ
クル膜への光の照射位置を調整する光照射位置調整手段
およびペリクル膜を透過した光の光量を測定する光量測
定手段とを有するペリクルの欠陥検査装置。(2) A device for inspecting defects in a pellicle film by irradiating the pellicle film with light, the light source irradiating the pellicle film with light, and the detection spot diameter of the irradiated light on the pellicle film being 50% of the minimum detectable defect diameter. Defect inspection of a pellicle, which includes a light condensing means for adjusting the light irradiation position to be equal to or less than double, a light irradiation position adjusting means for adjusting the irradiation position of the light onto the pellicle film, and a light amount measuring means for measuring the amount of light transmitted through the pellicle film. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17508890A JPH0464041A (en) | 1990-07-02 | 1990-07-02 | Method and apparatus for inspecting defect of pellicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17508890A JPH0464041A (en) | 1990-07-02 | 1990-07-02 | Method and apparatus for inspecting defect of pellicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0464041A true JPH0464041A (en) | 1992-02-28 |
Family
ID=15990040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17508890A Pending JPH0464041A (en) | 1990-07-02 | 1990-07-02 | Method and apparatus for inspecting defect of pellicle |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0464041A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5541418A (en) * | 1992-09-16 | 1996-07-30 | British Nuclear Fuels Plc | Inspection of cylindrical objects |
| US7497246B2 (en) | 2003-11-27 | 2009-03-03 | Daikin Industries, Ltd. | Air conditioner |
| US8006512B2 (en) | 2003-11-27 | 2011-08-30 | Daikin Industries, Ltd. | Air conditioner |
| CN102375351A (en) * | 2010-08-11 | 2012-03-14 | 上海微电子装备有限公司 | Signal normalization mask alignment system |
-
1990
- 1990-07-02 JP JP17508890A patent/JPH0464041A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5541418A (en) * | 1992-09-16 | 1996-07-30 | British Nuclear Fuels Plc | Inspection of cylindrical objects |
| US5703377A (en) * | 1992-09-16 | 1997-12-30 | British Nuclear Fuels Plc | Apparatus for the inspection of cylindrical objects having a borescope device |
| US7497246B2 (en) | 2003-11-27 | 2009-03-03 | Daikin Industries, Ltd. | Air conditioner |
| US7757749B2 (en) | 2003-11-27 | 2010-07-20 | Daikin Industries, Ltd. | Air conditioner |
| US8006512B2 (en) | 2003-11-27 | 2011-08-30 | Daikin Industries, Ltd. | Air conditioner |
| CN102375351A (en) * | 2010-08-11 | 2012-03-14 | 上海微电子装备有限公司 | Signal normalization mask alignment system |
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