JPH01272945A - Inspecting method for surface defect - Google Patents
Inspecting method for surface defectInfo
- Publication number
- JPH01272945A JPH01272945A JP10136888A JP10136888A JPH01272945A JP H01272945 A JPH01272945 A JP H01272945A JP 10136888 A JP10136888 A JP 10136888A JP 10136888 A JP10136888 A JP 10136888A JP H01272945 A JPH01272945 A JP H01272945A
- Authority
- JP
- Japan
- Prior art keywords
- foreign matter
- detected
- light
- foreign
- emitted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007547 defect Effects 0.000 title description 14
- 238000000034 method Methods 0.000 title description 14
- 239000000126 substance Substances 0.000 claims description 19
- 238000007689 inspection Methods 0.000 abstract description 22
- 230000001678 irradiating effect Effects 0.000 abstract description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052753 mercury Inorganic materials 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 2
- 238000004040 coloring Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 17
- 239000011521 glass Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 239000000428 dust Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の概要］
レチクル、マスクなどの表面欠陥の検査方法に係わり、
より詳細には、レチクル、マスクの表面に付着している
、しみ、薄膜などの検査を行う際に、蛍光を当て発色さ
せ、これの色差を判定して欠陥を見つける方法に関し、
しみ、薄膜に対して効率よく検出できる表面欠陥の検査
方法を提供することを目的とし、有機物系の異物が付着
する被検物に一定波長の紫外線を照射し、その紫外線吸
収により前記異物から発する蛍光を検知し、有機物系の
特性による発色量の違いにより検査することを特徴とす
る表面欠陥の検査方法を含み構成する。[Detailed Description of the Invention] [Summary of the Invention] This invention relates to a method for inspecting surface defects of reticles, masks, etc.
In more detail, when inspecting stains, thin films, etc. attached to the surface of reticles and masks, we will introduce a method for detecting defects by applying fluorescent light to develop a color and determining the color difference. The aim is to provide an inspection method for surface defects that can be efficiently detected by irradiating ultraviolet rays of a certain wavelength onto a specimen to which organic foreign matter is attached, and detecting the fluorescence emitted from the foreign matter by absorbing the ultraviolet light. , a surface defect inspection method characterized in that inspection is performed based on differences in the amount of color developed depending on the characteristics of organic substances.
本発明は、レチクル、マスクなどの表面欠陥の検査方法
に係わり、より詳細には、レチクル、マスクの表面に付
着している異物などの検査を行う際に、蛍光を照射し異
物から出る発色を検知し、これの色差を判定して欠陥を
見つげる方法に関する。The present invention relates to a method for inspecting surface defects on reticles, masks, etc., and more specifically, when inspecting foreign matter adhering to the surface of a reticle or mask, fluorescent light is irradiated to detect the color emitted from the foreign matter. It relates to a method of detecting and determining the color difference to identify defects.
近年、レチクルまたはマスクは、デバイスの微細化に伴
い、その回路パターンの集積度が密になってきており、
小さなじみや薄膜などの異物もパターン欠陥となり、こ
の欠陥を確実に検知できるものが要求されている。この
じみや薄膜などの欠陥は、−船釣に有機物系のものが多
い。従来のレチクル、マスクの表面検査装置においては
、主にヘリウム・ネオンなどのレーザ光を用いており、
このレーザ光を被検物であるレチクルあるいはマスクの
表面に照射し、この表面からの乱反射を利用して異物を
検査している。すなわち、レチクルあるいはマスクのク
ロムパターンは形状が決まっているため、レーザ光が一
定方向に散乱されるのに対して、異物などの場合には多
方向に散乱されるため、このことを利用して異物をパタ
ーンと区別し検査をしている。In recent years, with the miniaturization of devices, reticles or masks have become denser in their circuit patterns.
Foreign matter such as small run-ins or thin films can also be pattern defects, and there is a need for something that can reliably detect these defects. Defects such as stains and thin films are often caused by organic matter. Conventional reticle and mask surface inspection equipment mainly uses laser light such as helium or neon.
This laser light is irradiated onto the surface of a reticle or mask, which is an object to be inspected, and the diffused reflection from this surface is used to inspect foreign matter. In other words, since the chrome pattern on a reticle or mask has a fixed shape, the laser beam is scattered in one direction, whereas foreign objects, etc., scatter in many directions. Foreign objects are distinguished from patterns and inspected.
従来のレチクルあるいはマスクの表面検査装置では、レ
ーザ光の乱反射により異物を判断しているため、比較的
に厚さのある異物は検知できたが、薄いものについては
、散乱光が弱いため異物として捕らえにくかった。その
ため、厚さの無いじみや薄膜などの異物の検知が十分に
できず、しばしば異物がないと判断することがあり、露
光後デノ＼イスに欠陥を生している問題があった。Conventional reticle or mask surface inspection equipment detects foreign objects based on the diffuse reflection of laser light, so relatively thick foreign objects can be detected, but thin objects can be detected as foreign objects because the scattered light is weak. It was hard to catch. Therefore, it is not possible to sufficiently detect foreign substances such as thin spots or thin films, and it is often determined that there are no foreign substances, resulting in defects in the denomination after exposure.
そこで本発明は、しみ、薄膜などの異物に対して効率よ
く検出できる表面欠陥の検査方法を提供することを目的
とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a surface defect inspection method that can efficiently detect foreign substances such as stains and thin films.
上記課題は、有機物系の異物が付着する被検物に一定波
長の紫外線を照射し、その紫外線吸収により前記異物か
ら発する蛍光を検知し、有機物系の特性による発色量の
違いにより検査することを特徴とする表面欠陥の検査方
法によって解決される。The above-mentioned problem is to irradiate ultraviolet rays of a certain wavelength onto a test object to which organic foreign matter is attached, and detect the fluorescence emitted from the foreign matter by absorbing the ultraviolet light, and perform inspection based on the difference in the amount of color produced depending on the characteristics of the organic matter. This problem is solved by a characteristic surface defect inspection method.
第１図は本発明の原理説明図である。同図において、１
１は被検物であるレチクルあるいはマスクのガラス基板
、１２はこのガラス基板１１に形成された集積回路など
のクロムパターン、１３は異物となる薄膜、１４は異物
となる塵、１５はガラス基板１１の表面に照射する検査
用の紫外線である。この紫外線１５をガラス基板１１表
面に照射することにより、クロムパターン１２、薄膜１
３、塵１４は、紫外線１５を吸収し、同時に一定の波長
及び強度の蛍光（ルミネセンス）を発する。そして、こ
のクロムパターン１２、薄膜１３、塵１４の発する蛍光
は、強度、波長に差が生じており、特に金属であるクロ
ムパターン１２と、有機物系である薄膜１３及び塵１４
との間に強度が大きく異なっている。この違いを利用し
て予め用意しておいた色差データと比較して検査を行う
ものである。FIG. 1 is a diagram explaining the principle of the present invention. In the same figure, 1
1 is a glass substrate of a reticle or mask which is an object to be inspected; 12 is a chrome pattern such as an integrated circuit formed on this glass substrate 11; 13 is a thin film which is a foreign substance; 14 is dust which is a foreign substance; 15 is a glass substrate 11 This is ultraviolet light for inspection that irradiates the surface of the By irradiating the surface of the glass substrate 11 with this ultraviolet ray 15, the chromium pattern 12 and the thin film 1 are formed.
3. The dust 14 absorbs ultraviolet rays 15 and at the same time emits fluorescence (luminescence) with a certain wavelength and intensity. The fluorescence emitted by the chromium pattern 12, the thin film 13, and the dust 14 has a difference in intensity and wavelength.
There is a large difference in strength between the two. This difference is used to perform inspection by comparing with color difference data prepared in advance.
本発明では、紫外線１５を被検物であるガラス基板１１
表面に照射すると、この表面のクロムパターン１２、薄
膜１３、塵１４は、それぞれの物質に応して所定の強度
、波長の蛍光を発する。この蛍光は紫外線により物質中
の電子が刺激され光を放出する現象であり、金属である
クロムパターン１２は弱いが、有機物系である薄膜１３
と塵１４は強く発する。In the present invention, the ultraviolet rays 15 are applied to the glass substrate 11 which is the object to be inspected.
When the surface is irradiated, the chromium pattern 12, thin film 13, and dust 14 on the surface emit fluorescence with a predetermined intensity and wavelength depending on the respective substances. This fluorescence is a phenomenon in which electrons in a substance are stimulated by ultraviolet rays and emit light.The chromium pattern 12, which is a metal, is weak, but the thin film 13, which is an organic material, is weak.
And the dust 14 is strongly emitted.
この蛍光の特性を利用し、それをセンサなどで色差など
を測定し、クロムパターン１２か、薄膜１３あるいは塵
１４などの異物かを、予め用意しておいた色差データと
比較することにより、その差異により判定する。Utilizing the characteristics of this fluorescence, we measure the color difference using a sensor, etc., and compare it with color difference data prepared in advance to determine whether it is a chrome pattern 12, a thin film 13, or a foreign object such as dust 14. Judge based on the difference.
以下、本発明を図示の一実施例により具体的に説明する
。Hereinafter, the present invention will be specifically explained with reference to an illustrated embodiment.
第２図は本発明実施例の検査装置の構成図である。なお
、第１図に対応する部分は同一の符号を記す。第２図に
おいて、検査装置は、水平方向に移動するＸＹステージ
１６上に、被検物であるレチクルまたはマスクのガラス
基板１１が配置されている。このガラス基板１１上には
、異物として例えば有機物系の薄膜１３が付着している
。そして、ハロゲンランプまたは水銀ランプ１７から発
した光は、フィルタ１８を通し、例えば３５０ｎｍ〜４
００ｎｍ程度の波長の紫外線１５が選択され、ダイクロ
イック・ハーフミラ−１９で反射され、薄膜１３が有る
ガラス基板１１表面上に照射される。ガラス基板１１表
面に紫外線１５が照射され、薄膜１３から発した蛍光は
、ダイクロインク・ハーフミラ−１９を通過し、センサ
ー２０で検知される。このセンサー２０は、蛍光の強度
を測定し、その結果を比較器２１に出力する。この比較
器２１は、センサー２０で検知した蛍光の強度と、予め
入力されている有機物系の発光データとを比較して、被
検物が異物かどうか判断する。FIG. 2 is a configuration diagram of an inspection apparatus according to an embodiment of the present invention. Note that parts corresponding to those in FIG. 1 are denoted by the same reference numerals. In FIG. 2, in the inspection apparatus, a glass substrate 11 of a reticle or mask, which is an object to be inspected, is placed on an XY stage 16 that moves in the horizontal direction. On this glass substrate 11, a thin film 13 of, for example, an organic substance is attached as a foreign substance. Then, the light emitted from the halogen lamp or mercury lamp 17 passes through a filter 18, and the light is emitted from 350 nm to 4 nm, for example.
Ultraviolet light 15 having a wavelength of approximately 0.00 nm is selected, reflected by a dichroic half mirror 19, and irradiated onto the surface of the glass substrate 11 on which the thin film 13 is present. The surface of the glass substrate 11 is irradiated with ultraviolet light 15, and the fluorescence emitted from the thin film 13 passes through a dichroic ink half mirror 19 and is detected by a sensor 20. This sensor 20 measures the intensity of fluorescence and outputs the result to a comparator 21. The comparator 21 compares the intensity of the fluorescence detected by the sensor 20 with organic substance-based luminescence data input in advance to determine whether the object to be inspected is a foreign object.
次に、上記の検査装置による検査の方法を説明する。Next, an inspection method using the above inspection device will be explained.
第３図は本発明実施例の検査方法を示すフローチャート
である。FIG. 3 is a flowchart showing the inspection method according to the embodiment of the present invention.
まず、被検物であるレチクルまたはマスクをＸＹステー
ジ１６上に置く（ステップ５ＴＩ）。次に、水銀ランプ
１７を点灯し、フィルタ１８により３５０ｎｍ〜４００
ｎｍ程度の波長の紫外線１５が選択される（ステップＳ
Ｔ２，５Ｔ３）。そして、選択された紫外線１５は、ダ
イクロイック・ハーフミラ−１９で反射され、被検物を
照射する（ステップ５Ｔ４）。次に、照射された被検物
上に異物が有るか無いかにより、無い場合にはＸＹステ
ージ１６を別の検査位置に移動し被検物を照射し、また
有る場合には照明光とは別の波長の光（蛍光）を異物が
発する（ステップＳＴ５〜５Ｔ７）。この蛍光は、ダイ
クロイック・ハーフミラ−１９を通り抜け、センサー２
０で検知され、測定される（ステップＳＴ８．５Ｔ９）
。そして、測定されたセンサー２０の出力は、比較器２
１において、予め人力されているデータと比較され、そ
のデータと違う場合には警報（アラーム）が出され、そ
のデータと同じ場合には異物と判断される（ステップ５
Ｔ１０〜５Ｔ１２）。次に、検査を続けるかを判断し、
続ける場合には再び被検物を照射する以降のステップを
繰り返し、続けない場合には終了する（ステップ５Ｔ１
３）。First, a reticle or mask as a test object is placed on the XY stage 16 (step 5TI). Next, the mercury lamp 17 is turned on, and the filter 18
Ultraviolet light 15 having a wavelength of about nm is selected (step S
T2,5T3). The selected ultraviolet light 15 is then reflected by the dichroic half mirror 19 and irradiates the object to be inspected (step 5T4). Next, depending on whether there is a foreign object on the irradiated test object, if there is no foreign object, the XY stage 16 is moved to another inspection position and the test object is irradiated, and if there is, the illumination light is The foreign substance emits light (fluorescence) of a different wavelength (steps ST5 to 5T7). This fluorescence passes through the dichroic half mirror 19 and the sensor 2
Detected and measured at 0 (step ST8.5T9)
. Then, the measured output of the sensor 20 is converted to the comparator 2
In step 1, the object is compared with pre-entered data, and if it differs from that data, an alarm is issued, and if it is the same, it is determined that it is a foreign object (step 5).
T10-5T12). Next, decide whether to continue the test,
If the process is to be continued, the steps after irradiating the object are repeated; if not, the process ends (step 5T1).
3).
なお、上記実施例においては、レチクル、マスクのしみ
、薄膜などの欠陥を検知しているが、少なくとも有機物
系の異物が付着する被検物に−・定波長の紫外線を照射
し、紫外線吸収により異物から発する蛍光を検知し、有
機物系の特性による発色量の違いにより検査すればよく
、紫外線の波長は有機物系の特性に応じて検知しやすい
ものが選択される。In the above embodiment, defects such as stains on the reticle, mask, thin film, etc. are detected, but at least the object to be detected to which organic foreign matter is attached is irradiated with ultraviolet rays of a constant wavelength and detected by ultraviolet absorption. The fluorescence emitted from the foreign substance may be detected and the inspection can be performed based on the difference in the amount of color produced depending on the characteristics of the organic substance, and the wavelength of ultraviolet light is selected to be one that is easy to detect depending on the characteristics of the organic substance.
以」二の様に本発明によれば、紫外線を照射し、その紫
外線吸収により異物から発する蛍光を検知し特性による
発色量の違いから検査することにより、薄膜などの薄い
異物も検知可能であり、検査精度が向上し、レチクル、
マスクなどの品質向上に寄与するところが大きい。As described above, according to the present invention, it is possible to detect thin foreign substances such as thin films by irradiating ultraviolet rays, detecting the fluorescence emitted from foreign substances by absorbing the ultraviolet rays, and examining the difference in the amount of color produced depending on the characteristics. , inspection accuracy is improved, reticle,
This greatly contributes to improving the quality of masks and other products.
第１図は本発明の原理説明図、
第２図は本発明実施例の検査装置の構成図、第３図は本
発明実施例の検査方法を示すフローチャートである。
図中、
１１はガラス基板、
１２はクロｌ、パターン、
１３は薄膜、
１４は塵、
１５は紫外線、
１６はＸＹステージ、
１７は水銀ランプ、
１８はフィルタ、
１９はダイクロイック・ハーフミラ−１２０はセンサー
、
２１は比較器
を示ず。
特許出願人 富士通株式会社
代理人弁理士 久木元 彰
駆
書
１訃
一匹
ヤ
子
一’（１１１−FIG. 1 is an explanatory diagram of the principle of the present invention, FIG. 2 is a configuration diagram of an inspection apparatus according to an embodiment of the present invention, and FIG. 3 is a flowchart showing an inspection method according to an embodiment of the present invention. In the figure, 11 is a glass substrate, 12 is a chlorine pattern, 13 is a thin film, 14 is a dust, 15 is an ultraviolet ray, 16 is an XY stage, 17 is a mercury lamp, 18 is a filter, 19 is a dichroic half mirror, and 120 is a sensor , 21 does not show a comparator. Patent Applicant: Fujitsu Limited, Representative Patent Attorney, Moto Kuki
Claims (1)
１５）を照射し、その紫外線（１５）吸収により前記異
物から発する蛍光を検知し、有機物系の特性による発色
量の違いにより検査することを特徴とする表面欠陥の検
査方法。A certain wavelength of ultraviolet rays (
15), detecting the fluorescence emitted from the foreign substance by absorbing the ultraviolet ray (15), and inspecting based on the difference in the amount of color developed depending on the characteristics of the organic substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10136888A JPH01272945A (en) | 1988-04-26 | 1988-04-26 | Inspecting method for surface defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10136888A JPH01272945A (en) | 1988-04-26 | 1988-04-26 | Inspecting method for surface defect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01272945A true JPH01272945A (en) | 1989-10-31 |
Family
ID=14298881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10136888A Pending JPH01272945A (en) | 1988-04-26 | 1988-04-26 | Inspecting method for surface defect |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01272945A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02307047A (en) * | 1989-05-22 | 1990-12-20 | Nec Corp | Reticle foreign matter inspection device |
| JP2001059820A (en) * | 1999-06-16 | 2001-03-06 | Sumitomo Electric Ind Ltd | Detection method of fine foreign matter and method for producing plastic insulated power cable using the same |
| JP2002116150A (en) * | 2000-10-11 | 2002-04-19 | Menicon Co Ltd | Method and apparatus for detecting dirt on eye lens |
| JP2006201015A (en) * | 2005-01-20 | 2006-08-03 | Toppan Printing Co Ltd | Inspection device using linear line like ultraviolet illumination light |
| WO2009070817A1 (en) * | 2007-12-03 | 2009-06-11 | At & S Austria Technologie & Systemtechnik Aktiengesellschaft | Method and device for determining residues of a material and use thereof |
| WO2016002273A1 (en) * | 2014-07-04 | 2016-01-07 | 株式会社Sumco | Method for evaluating organic material contamination on surface of semiconductor substrate and use of same |
| US20220276153A1 (en) * | 2019-08-02 | 2022-09-01 | Ushio Denki Kabushiki Kaisha | Broadband pulsed light source apparatus and spectroscopic measurement method |
-
1988
- 1988-04-26 JP JP10136888A patent/JPH01272945A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02307047A (en) * | 1989-05-22 | 1990-12-20 | Nec Corp | Reticle foreign matter inspection device |
| JP2001059820A (en) * | 1999-06-16 | 2001-03-06 | Sumitomo Electric Ind Ltd | Detection method of fine foreign matter and method for producing plastic insulated power cable using the same |
| JP2002116150A (en) * | 2000-10-11 | 2002-04-19 | Menicon Co Ltd | Method and apparatus for detecting dirt on eye lens |
| JP2006201015A (en) * | 2005-01-20 | 2006-08-03 | Toppan Printing Co Ltd | Inspection device using linear line like ultraviolet illumination light |
| WO2009070817A1 (en) * | 2007-12-03 | 2009-06-11 | At & S Austria Technologie & Systemtechnik Aktiengesellschaft | Method and device for determining residues of a material and use thereof |
| WO2016002273A1 (en) * | 2014-07-04 | 2016-01-07 | 株式会社Sumco | Method for evaluating organic material contamination on surface of semiconductor substrate and use of same |
| JP2016018822A (en) * | 2014-07-04 | 2016-02-01 | 株式会社Sumco | Semiconductor substrate surface organic contamination evaluation method and application of the same |
| US20220276153A1 (en) * | 2019-08-02 | 2022-09-01 | Ushio Denki Kabushiki Kaisha | Broadband pulsed light source apparatus and spectroscopic measurement method |
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