JP4153652B2 - Pattern evaluation apparatus and pattern evaluation method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an evaluation apparatus for evaluating a lithography resist pattern used when manufacturing a semiconductor device and an evaluation method using the evaluation apparatus.
[0002]
[Prior art]
In the manufacturing process of a semiconductor device, it is an indispensable process to inspect a semiconductor wafer on which an IC, an LSI, or the like is built. Such an inspection is performed many times during the manufacturing process substantially each time each layer is formed.
Conventionally, in the process of patterning a resist such as a photoresist formed on a semiconductor substrate, the pattern edge roughness and the connection accuracy are evaluated by forming the resist pattern, observing the pattern with an electron microscope, and performing image processing. The method of going and evaluating is used. However, in such a method, it takes a lot of time for observation and image processing, and it is necessary to evaluate each line in order to evaluate the entire chip and the entire wafer. So far, efficient evaluation has been difficult.
[0003]
[Problems to be solved by the invention]
As a conventional pattern inspection method, a technique described in JP-A-9-329555 is known. In this technique, defects are extracted by irradiating a pattern with white light and measuring the intensity of the diffracted light. In the method for inspecting a defect on a surface of a substrate having a feature having a periodic structure on a surface, the method includes the step of applying incident light onto the surface of the substrate, the step of detecting diffracted light from the surface of the substrate, Comparing the diffraction efficiency of the diffracted light with a known diffraction efficiency, and determining the presence or absence of a local defect in the feature on the substrate from the compared diffraction efficiency.
[0004]
As for the pattern dimensions, as disclosed in Japanese Patent Laid-Open No. 10-300428, the pattern is measured by irradiating the pattern with light having a specific wavelength and measuring the intensity of the diffracted light. However, with this technique, it has been difficult to evaluate pattern edge flaneness and splicing accuracy due to the type of light to be irradiated and the problem of detection means.
The present invention has been made under such circumstances, and based on the above defect inspection and pattern measurement method, the selectivity of the irradiation light is increased, and the edge roughness is easily made use of the correlation with the diffracted light and the scattering intensity. The present invention provides a pattern evaluation apparatus that can be measured at once and a pattern evaluation method using this evaluation apparatus.
[0005]
[Means for Solving the Problems]
The present invention relates to an evaluation apparatus and an evaluation method for evaluating a resist pattern, and includes a light source means capable of perpendicularly or obliquely incident on a substrate such as a semiconductor substrate on which a resist pattern to be evaluated is formed, and a photodetector detector. And a means for calculating the roughness of the resist pattern based on the result of the spectrum analysis. Based on defect inspection and pattern measurement methods, the selectivity of the irradiated light is increased, and the edge roughness of the resist pattern is detected by detecting the spread of light by spectral analysis instead of measuring the edge roughness from the conventional light intensity. It can be easily measured.
[0006]
That is, the pattern evaluation apparatus according to the present invention includes a means for irradiating a resist pattern formed on a substrate with light that is incident perpendicularly or obliquely to the substrate, and a reflection Light detection means for measuring the intensity of the scattered light for each wavelength, means for measuring the spectrum spread of the reflected or scattered light by spectral analysis, and calculating the roughness of the resist pattern based on the result of the spectral analysis It is characterized by having the means to do. The irradiated light may be laser light or white light. The means for irradiating the light may include at least one of a spectroscope, a diffraction grating, and a prism that monochromatizes the light from the light source. The means for irradiating the light may include a slit or a pinhole that detects the light with high resolution. The means for irradiating light may include a polarizer or a polarizing plate to irradiate the resist pattern with deflected light. The means for irradiating light may include an optical fiber as means for arbitrarily changing the incident angle and position of the irradiation light. The light detection means may include at least one of a slit, a pinhole, a spectroscope, a diffraction grating, a prism, and a wavelength resolving CCD. The apparatus may further include means for irradiating the light, the light detection means, the spectrum analysis means, and the calculation means, and the support means may include a device for moving an optical fiber. The apparatus may further include means for supporting the light irradiation means, the light detection means, the spectrum analysis means, and the calculation means, and the support means may include a holder for moving the substrate. The support means may rotate or tilt the substrate. The resist pattern to be evaluated may be a line and space pattern or a checkered pattern.
[0007]
The method of manufacturing a semiconductor device according to the present invention includes a means for irradiating a laser beam polarized by a polarizer and incident on a resist pattern formed on a substrate from a direction perpendicular or oblique to the substrate. A light detecting means for measuring the intensity of light reflected / diffracted / scattered from the light, a means for measuring the degree of polarization of the reflected / diffracted / scattered light by spectral analysis, and a resist pattern based on the result of the spectral analysis. And means for calculating roughness.
The method for manufacturing a semiconductor device of the present invention includes a step of irradiating a resist pattern formed on the substrate with white light or laser light, a step of detecting the intensity of reflected light from the resist pattern, and a spectrum by the reflected light. And a step of calculating the roughness of the resist pattern based on the result of the spectrum analysis step. In the step of calculating the roughness, the relationship between the edge roughness and the spread of the spectrum due to diffraction / scattering may be measured in advance using a standard pattern.
The method for manufacturing a semiconductor device of the present invention includes a step of irradiating a resist pattern formed on a substrate with laser light polarized by a polarizer, a step of detecting the intensity of reflected / scattered light from the resist pattern, The method includes a step of spectrally analyzing the degree of polarization of the reflected / scattered light, and a step of calculating the roughness of the resist pattern based on the result of the spectral analysis step.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, a first embodiment will be described with reference to FIGS.
FIG. 1 is a cross-sectional view of a measuring apparatus that measures the edge roughness of a resist pattern using reflected or diffracted light, FIG. 2 is a characteristic diagram showing the intensity of light detected by a photodetector, and FIG. It is a characteristic view showing the relationship between the spread of the spectrum of the pattern and the edge roughness of the resist pattern. As shown in FIG. 1, a patterned resist film 2 such as a photoresist is formed on a film to be processed 1 formed on a semiconductor substrate (wafer) such as silicon. The pattern evaluation apparatus includes a semiconductor substrate mounted on a stage 8 which is arranged on a support table 9 and has a resist pattern (resist film) 2 to be evaluated formed thereon, which can be moved vertically and horizontally on the support table. Generated by irradiating the resist pattern 2 with the white light 3 that irradiates the processing target film 1 such as an insulating film or a metal film formed on the semiconductor substrate with the white light 3 that can be perpendicularly or obliquely incident. An optical detector 5 that receives the reflected / diffracted / scattered light 4 that is transmitted, spectral analysis means 7 that analyzes the spread of the spectrum from the output data from the optical detector 5, and standard data in which the results of the spectral analysis are prepared in advance And means (not shown) for calculating the roughness of the resist pattern by comparison. The optical detector 5 is a movable wavelength-resolved optical detector capable of measuring reflected / diffracted / scattered light 4 such as a CCD, and is supported on a support base 9 by a support 10.
[0009]
The resist pattern 2 is evaluated by measuring reflected / diffracted / scattered light 4 generated from the irradiated white light 3 using this pattern evaluation apparatus. First, white light emitted from the light source (hν) Is Through the slit, white light 3 shaped to a pattern size or less is formed by a spectroscope. Then, the resist pattern 2 is irradiated with white light 3 formed from an oblique direction. The white light 3 irradiated to the resist pattern 2 is diffracted and shaped by a spectroscope through a slit to become diffracted light 4. The diffracted light 4 is received by the photodetector 5. The intensity of the diffracted light 4 is detected for each wavelength by the photodetector 5. At that time, the position of the photodetector 5 can be changed as necessary. The white light described here is Monochromatic light shaped by a spectroscope emitted from a white light source Means.
[0010]
In this embodiment (FIG. 1), the white light emitted from the light source passes through a slit and is shaped by a spectroscope. Yes. Further, when the light emitted from the light source is shaped before incidence as described above, it may be shaped similarly after reflection. Use of a slit or pinhole is advantageous because it improves the light resolution. A spectroscope, a diffraction grating, a prism, or the like can be used to shape light from a light source or reflected light. When these are used, light can be monochromatic. White light can be polarized using a polarizing plate or the like. When polarized, the scattered light needs to be polarized. A polarizer is used when the laser light from the light source is polarized. In this embodiment, the molded white light 3 is guided in the vicinity of the resist pattern 2 by an optical fiber. The optical fiber is advantageous because it can easily change the incident angle and the position of the irradiation light, but this need not be used in the present invention. Next, the detected data is corrected for the spectrum of the irradiation light source, the detector sensitivity, and other optical systems, and analyzed by the spectrum analyzing means 7 from the surface of the center wavelength dispersion (σ), that is, the half width at half maximum (FWHM). The analyzing means 7 uses a processor for analyzing the width and shape of the spectrum.
[0011]
Next, the analysis result is compared with the result of the standard pattern whose roughness is measured by SEM (Scanning Electron Microscope). Then, the roughness calculation means calculates the roughness of the resist pattern.
The resist pattern 2 arranged at equal intervals on the processing target film 1 of the substrate can be regarded as one kind of diffraction grating. Therefore, when the white light 3 is irradiated onto the resist pattern 2, the diffracted light 4 is split. When this is detected by the optical detector 5 fixed at a predetermined position, light having a wavelength determined by the pattern size and the pattern interval is detected more strongly. FIG. 2 is a characteristic diagram showing the intensity (INTENSITY) of the light detected by the photodetector, where the vertical axis represents the intensity of the diffracted light and the horizontal axis represents the spectral spread (σ). Since the spread of the spectrum directly represents the state at the time of diffraction, it spreads when the edge roughness of the resist pattern is large. That is, the edge roughness of the pattern is detected by the spread of the spectrum detected by the photodetector.
[0012]
Next, the relationship between the spread (σ) of the spectrum of the standard pattern and the edge roughness can be examined in advance, and the edge roughness of the entire pattern can be easily and quantitatively evaluated. FIG. 3 is a characteristic diagram showing the relationship between the spread of the spectrum of the standard pattern and the edge roughness of the resist pattern. The vertical axis represents edge roughness (EDGE ROUGHNESS), and the horizontal axis represents the spread of spectrum (σ). FIG. 2 shows three types of spectrum broadening (WAVELENGTH: σ), σ1, σ2, and σ3 (σ3>σ2> σ1). As shown in FIG. 3, the edge roughness increases as the spectral spread (σ) increases.
In addition, since this evaluation device does not depend on the refractive index of the underlying substrate, which is a film to be processed formed on a semiconductor substrate, any film can be handled as long as the position of the light source and detector is not changed. it can.
Based on defect inspection and pattern measurement methods, the selectivity of the white light emitted is increased, and the edge roughness is not measured from the conventional light intensity, but the spread of the white light is detected by spectral analysis. Edge roughness can be easily measured.
[0013]
Next, a second embodiment will be described with reference to FIGS.
FIG. 4 is a cross-sectional view of a measuring apparatus that measures the edge roughness of a resist pattern using reflected or diffracted light, FIG. 5 is a characteristic diagram showing the intensity of light detected by a photodetector, and FIG. It is a characteristic view showing the relationship between the spread of the spectrum of the pattern and the degree of polarization and the edge roughness of the resist pattern. As shown in FIG. 4, a patterned resist film 22 such as a photoresist is formed on a film to be processed 21 formed on a semiconductor substrate (wafer) such as silicon. The pattern evaluation apparatus is arranged on a support base 29, a resist pattern (resist film) 22 to be evaluated is formed, and a semiconductor substrate mounted on a stage 28 that can move up and down and left and right on the support base; Generated by irradiating laser beam 23 onto resist pattern 22 with means for irradiating laser beam 23 that can be perpendicularly or obliquely incident on target film 21 such as an insulating film or a metal film formed on a semiconductor substrate An optical detector 25 for receiving the reflected light 24, a spectral analysis means 27 for analyzing the spread of the spectrum from the output data from the optical detector 25, and comparing the result of the spectral analysis with standard data prepared in advance. Means (not shown) for calculating the roughness of the pattern. The optical detector 25 is a movable wavelength-resolved optical detector capable of measuring reflected light 24 such as reflected / diffracted / scattered light from a CCD or the like, and is supported on a support base 29 by a support 30.
[0014]
The resist pattern 22 is evaluated by measuring the reflected / diffracted / scattered light 24 generated from the irradiated laser beam 23 using this pattern evaluation apparatus. First, a laser beam emitted from a light source (laser: hν) is passed through a slit, and a laser beam 23 shaped to a pattern size or less is formed by a spectroscope. The laser beam 23 is guided by an optical fiber and takes out light of only a linearly polarized component by a polarizer 31. Then, the resist pattern 22 is irradiated with laser light 23 polarized from an oblique direction. The polarized laser beam 23 applied to the resist pattern 22 is reflected and scattered, and only a specific polarized component is extracted by the polarizer 32. The extracted reflected / scattered light is shaped by a spectroscope through a slit to become reflected / scattered light 24. The reflected / scattered light 24 is received by the photodetector 25. The intensity of the reflected / scattered light 24 is detected for each wavelength by the optical detector 25. At that time, the position of the photodetector 25 can be changed as necessary.
[0015]
In this embodiment (FIG. 4), the laser light emitted from the light source passes through the slit and is shaped by the spectroscope. However, it may be reflected as it is without passing through the slit or the like and detected by the optical detector. Further, when the laser light emitted from the light source is shaped before incidence as described above, it may be shaped similarly after reflection. Use of a slit or pinhole is advantageous because it improves the light resolution. A polarizer is used to polarize the laser beam. Further, in this embodiment, the shaped laser beam 23 is guided in the vicinity of the resist pattern 22 by an optical fiber, but this need not be used.
Next, the detected data is corrected by the spectrum analysis means 27 from the surface of the center wavelength dispersion (σ), that is, the half width at half maximum (FWHM), after correcting the spectrum of the irradiation light source, the detector sensitivity, and other optical systems. The analyzing means 27 uses a processor for analyzing the width and shape of the spectrum. When polarized laser light is used, analysis can be performed based on the degree of polarization. In that case, a processor for analyzing the degree of polarization of the polarized reflected light is used.
[0016]
Next, the analysis result is compared with the result of the standard pattern whose roughness is measured by SEM (Scanning Electron Microscope). Then, the roughness calculation means calculates the roughness of the resist pattern.
The resist pattern 22 arranged at equal intervals on the film to be processed of the substrate can be regarded as one kind of polarizer. Therefore, when linearly polarized light such as laser light 23 is incident on the resist pattern 22, the reflected light 24 is scattered and becomes elliptically polarized light. Therefore, the spectrum of the entire reflected light is broadened. When this light intensity is detected by the light detector 25 fixed at a predetermined position, as shown in FIG. 5, the spectrum is wider than the spectrum when irradiated. The spread (σ) of the spectrum due to this scattering becomes large when σ is large (σ1 <σ2 <σ3). FIG. 5 is a characteristic diagram showing the intensity (INTENSITY) of the light detected by the photodetector, where the vertical axis represents the intensity (au) of the diffracted light, and the horizontal axis represents the spectral broadening (WAVELENGTH: σ) (au). Since this spectral spread (σ) directly represents the state of the laser beam 23 when it is scattered, it spreads when the edge roughness of the resist pattern is large. That is, the edge roughness of the pattern is detected by the spread of the spectrum detected by the photodetector.
[0017]
Next, the relationship between the spread (σ) of the spectrum of the standard pattern and the edge roughness can be examined in advance, and the edge roughness of the entire pattern can be easily and quantitatively evaluated. FIG. 6A is a characteristic diagram showing the relationship between the spread of the spectrum of the standard pattern and the edge roughness of the resist pattern, and the vertical axis represents the edge roughness of the line (LINE EDGE ROUGHNESS) (au). The horizontal axis represents the spectrum spread (σ) (au).
When a processor that analyzes the degree of polarization of polarized reflected light is used, the edge roughness of the entire pattern can be quantitatively evaluated using the characteristic diagram of FIG. FIG. 6B is a characteristic diagram showing the relationship between the polarization degree of reflected light of the standard pattern and the edge roughness of the resist pattern, and the vertical axis represents the line edge roughness (LINE EDGE ROUGHNESS) (au). The horizontal axis represents the degree of polarization (au) of the spectrum.
[0018]
In addition, since this evaluation device does not depend on the refractive index of the underlying substrate, which is a film to be processed formed on a semiconductor substrate, any film can be handled as long as the position of the light source and detector is not changed. it can.
In this embodiment, the selectivity of the polarized laser beam irradiated based on the defect inspection and pattern measurement method is raised, and the edge roughness is not measured from the conventional light intensity, but the spread of the laser beam by spectrum analysis. By detecting this, it is possible to easily measure the edge roughness of the resist pattern.
[0019]
Next, a third embodiment will be described with reference to FIGS.
FIG. 7 is a characteristic diagram for explaining the correlation between the line width and edge roughness when the aperture is contaminated, FIG. 8 is a plan view of an evaluation pattern used in this embodiment, and FIG. 9 is an acceleration voltage of 50 kV. 1 is a schematic cross-sectional view of a CP type electron beam exposure apparatus. This embodiment is characterized in that the resist pattern is evaluated using the pattern evaluation apparatus used in the first and second embodiments, and the aperture of the electron beam exposure apparatus is evaluated based on this.
The electron beam 102a generated from the electron gun 101 is irradiated onto the wafer 107 through lenses 111a, 111b, and 111c. The electron beam 102a draws a pattern of a predetermined shape on the resist of the wafer 107 by inserting the first and second apertures 103 and 104 (mask). A first aperture 103 is inserted between the lenses 111a and 111b, and a second aperture 105 is inserted between the lenses 111b and 111c. Further, a deflector 104 a and an intermediate detector 108 are disposed on the second aperture 105. A deflector 104b and an on-sample detector 109 are disposed on the wafer 107.
[0020]
The first and second apertures 103 and 105 are formed with patterns suitable for pattern drawing.
The electron beam is accelerated to energy of 10 to 100 keV and is incident on the resist in order to ensure convergence and transparency. High-speed electrons in the resist generate secondary electrons of several eV by collision with constituent atoms. The secondary electrons react with a resin as a resist base material or a photosensitizer added to the base material, thereby altering them. Due to this alteration, a difference occurs in the dissolution rate with respect to a specific chemical solution (developer) between the non-irradiated portion which has not been altered in the resist. In this manner, the resist irradiated with the electron beam is immersed in the developer to form a resist pattern.
In this embodiment, a beam blur evaluation method using aperture contamination will be described. The evaluation aperture is for the first or second aperture above.
First, (1) an aperture for evaluation is provided on the aperture mask. The evaluation aperture can form an evaluation pattern. (2) 500 μC / cm per day for the evaluation aperture ² Irradiate the electron beam. Next, (3) an evaluation pattern is formed on the substrate using this aperture. (4) Thereafter, this evaluation pattern is evaluated by the evaluation methods shown in the first and second embodiments.
[0021]
When the aperture is contaminated, the beam is blurred, so that the beam resolution is lowered, the edge roughness is increased, and the joint accuracy is deteriorated. Therefore, the aperture flushing and replacement period was decided by regularly observing the edge roughness with SEM (Masaki Yoshizawa, Shigeru Moriya (Sony)), 47th Applied Physics Related Performance Performance Preliminary Performance Collection, p719). However, this kind of work takes time and is only performed once a week. Therefore, by measuring the edge roughness every day using the method shown in the first or second embodiment, which can easily measure the edge roughness, it is possible to grasp a detailed change in beam blur, and to flush the aperture.・ You can know the replacement time more accurately. FIG. 7 is a characteristic diagram for explaining the correlation between the line width (LINE WIDTH) (nm) and edge roughness (LINE EDGE ROUGHNESS) when the aperture is contaminated. AP (L) is shown in FIG. The upper convolution characteristic line AP (R) of the aperture represents the lower convolution characteristic line of the aperture. In this way, the adhesion state of the contour differs depending on the position in the aperture.
[0022]
In this embodiment, an evaluation method has been described in which the amount of contamination attached to the aperture, the blur of the beam, and the edge roughness can be measured in advance to easily grasp the daily replacement time of the consumables and the state of the machine. Further, by introducing a simple evaluation pattern as shown in FIG. 8 in advance and performing evaluation based on this, efficient work or automation can be performed.
In this embodiment, only the line and space (L & S) pattern is dealt with as the evaluation pattern, but the present invention may be a checkered pattern. Further, the present invention may not be a resist pattern such as a metal wiring. That is, there is no restriction on the material that becomes the substrate or the underlying film. In addition, various modifications can be made without departing from the scope of the present invention.
[0023]
In this way, the present invention increases the selectivity of irradiation light based on defect inspection and pattern measurement methods, and detects the spread of light by spectral analysis rather than measuring edge roughness from conventional light intensity. Thus, the edge roughness of a pattern such as a resist pattern can be easily measured at high speed. Further, by adding a spectroscope, a polarizer, a pinhole, a slit, or the like to the means for irradiating light, the selectivity of the irradiating light can be increased and the diversification of the evaluation pattern can be dealt with. In addition, by adding an optical fiber to the light irradiation means, the light source position and the substrate position can be arbitrarily arranged, and the irradiation light can be easily and freely aligned with the evaluation pattern. become. Further, by adding a polarizer, a pinhole, a spectroscope or the like to the means for detecting light, high-accuracy measurement is possible.
Further, by using a holder that can arbitrarily move an optical fiber or a substrate, these highly accurate movements can be performed. Further, by using a line & space or checkered pattern as an evaluation pattern, edge roughness and a joint portion can be emphasized, so that highly accurate pattern evaluation can be performed.
[0024]
【The invention's effect】
With the above configuration, the present invention increases the selectivity of irradiation light based on defect inspection and pattern measurement methods, and detects the spread of light by spectral analysis rather than measuring edge roughness from conventional light intensity. As a result, the edge roughness of a pattern such as a resist pattern can be easily measured with high accuracy and at high speed.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a measuring apparatus for measuring edge roughness of a resist pattern using reflection or diffracted light according to the present invention.
FIG. 2 is a characteristic diagram showing the intensity of light detected by the photodetector of the present invention.
FIG. 3 is a characteristic diagram showing the relationship between the spread of the spectrum of the standard pattern of the present invention and the edge roughness of the resist pattern.
FIG. 4 is a schematic cross-sectional view of a measuring apparatus for measuring the edge roughness of a resist pattern using reflection or diffracted light according to the present invention.
FIG. 5 is a characteristic diagram showing the intensity of light detected by the photodetector of the present invention.
FIG. 6 is a characteristic diagram showing the relationship between the spectral broadening and polarization degree of the standard pattern of the present invention and the edge roughness of the resist pattern.
FIG. 7 is a characteristic diagram illustrating the correlation between the line width and edge roughness when the aperture of the present invention is contaminated.
FIG. 8 is a plan view of a QC pattern used in an embodiment of the present invention.
FIG. 9 is a schematic cross-sectional view of a CP-type electron beam exposure apparatus with an acceleration voltage of 50 kV for carrying out the present invention.
[Explanation of symbols]
1, 21 ... film to be processed, 2, 22 ... resist pattern,
3 ... white light, 4,24 ... reflected / diffracted / scattered light,
5, 25 ... optical detectors, 7, 27 ... analyzers,
8, 28 ... stage, 9, 29 ... support base,
10, 30 ... support, 23 ... laser beam,
31, 32 ... Polarizers.

Claims (10)

  Means for irradiating the resist pattern formed on the substrate with light incident perpendicularly or obliquely to the substrate, and the intensity of the reflected or scattered light reflected / scattered from the resist pattern in terms of wavelength A light detecting means for measuring each time, a means for measuring a spectral spread of the reflected or scattered light by spectral analysis, and a means for calculating the roughness of the resist pattern based on the result of the spectral analysis A pattern evaluation apparatus. The pattern evaluation apparatus according to claim 1, wherein the irradiated light is laser light emitted from a laser light source or monochromatic light formed by a spectroscope emitted from a white light source.   The pattern evaluation apparatus according to claim 1, wherein the light irradiating unit includes at least one of a spectroscope, a diffraction grating, and a prism that monochromatizes light from a light source. .   The pattern evaluation apparatus according to claim 1, wherein the light irradiating unit includes a slit or a pinhole that detects light with high resolution.   The pattern evaluation apparatus according to claim 1, wherein the light irradiation unit includes a polarizer or a polarizing plate to irradiate the resist pattern with polarized light.   6. The pattern evaluation apparatus according to claim 1, wherein the light detection unit includes at least one of a slit, a pinhole, a spectroscope, a diffraction grating, a prism, and a wavelength-resolved CCD. .   Means for irradiating the resist pattern formed on the substrate perpendicularly or obliquely to the substrate and irradiating laser light polarized by a polarizer, and light reflected, diffracted or scattered from the resist pattern A light detecting means for measuring the intensity of any one of the following: a means for measuring the degree of polarization of the reflected light, diffracted light or scattered light by spectral analysis; and the roughness of the resist pattern based on the result of the spectral analysis. A pattern evaluation apparatus comprising: means for calculating. A step of irradiating the resist pattern formed on the substrate with monochromatic light or laser light molded with a spectroscope emitted from a white light source, and detecting the intensity of reflected light, diffracted light or scattered light from the resist pattern A step of spectrally analyzing the spread of a spectrum caused by any one of the reflected light, diffracted light, and scattered light, and a step of calculating roughness of a resist pattern based on a result of the spectral analysis step. Pattern evaluation method.   9. The pattern evaluation method according to claim 8, wherein in the step of calculating the roughness, a relationship between edge roughness and a spectrum spread due to diffraction or scattering is measured in advance using a standard pattern.   Irradiating the resist pattern formed on the substrate with laser light polarized by a polarizer, detecting the intensity of the reflected or scattered light from the resist pattern, and the degree of polarization of the reflected or scattered light. A pattern evaluation method comprising: a step of analyzing a spectrum; and a step of calculating roughness of a resist pattern based on a result of the step of analyzing the spectrum.

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