JPS6248913B2 - - Google Patents

Info

Publication number
JPS6248913B2
JPS6248913B2 JP56122709A JP12270981A JPS6248913B2 JP S6248913 B2 JPS6248913 B2 JP S6248913B2 JP 56122709 A JP56122709 A JP 56122709A JP 12270981 A JP12270981 A JP 12270981A JP S6248913 B2 JPS6248913 B2 JP S6248913B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
electrode
forming
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56122709A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5823491A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56122709A priority Critical patent/JPS5823491A/ja
Publication of JPS5823491A publication Critical patent/JPS5823491A/ja
Publication of JPS6248913B2 publication Critical patent/JPS6248913B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP56122709A 1981-08-05 1981-08-05 光電変換装置作製方法 Granted JPS5823491A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56122709A JPS5823491A (ja) 1981-08-05 1981-08-05 光電変換装置作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56122709A JPS5823491A (ja) 1981-08-05 1981-08-05 光電変換装置作製方法

Publications (2)

Publication Number Publication Date
JPS5823491A JPS5823491A (ja) 1983-02-12
JPS6248913B2 true JPS6248913B2 (enrdf_load_stackoverflow) 1987-10-16

Family

ID=14842662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56122709A Granted JPS5823491A (ja) 1981-08-05 1981-08-05 光電変換装置作製方法

Country Status (1)

Country Link
JP (1) JPS5823491A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088481A (ja) * 1983-10-20 1985-05-18 Kanegafuchi Chem Ind Co Ltd 太陽電池

Also Published As

Publication number Publication date
JPS5823491A (ja) 1983-02-12

Similar Documents

Publication Publication Date Title
EP2197036A1 (en) Method for manufacturing solar cell
KR101110825B1 (ko) 이면 접합형 태양 전지 및 그 제조 방법
WO2020155801A1 (zh) 阵列基板及其制作方法和显示面板
CN107170807B (zh) 一种薄膜晶体管及其制备方法、阵列基板、显示装置
JP3955156B2 (ja) 電子機器用構成基板と電子機器
JP2004006565A (ja) 太陽電池とその製造方法
JP2000183379A (ja) 太陽電池の製造方法
CN113345837A (zh) 一种显示面板的制作方法及显示面板
JP2989373B2 (ja) 光電変換装置の製造方法
JP5139502B2 (ja) 裏面電極型太陽電池
US10629834B2 (en) Thin film transistor, method for preparing the same, and display device
WO2020156239A1 (zh) 光电二极管及其制备方法、电子设备
CN113345919A (zh) 显示面板及其制作方法
JPS6248913B2 (enrdf_load_stackoverflow)
JPH0746721B2 (ja) イメ−ジセンサおよびその製造方法
JPS5823489A (ja) 半導体装置作製方法
JPS622472B2 (enrdf_load_stackoverflow)
JP2522024B2 (ja) 光電変換素子の製造方法
JPS5823490A (ja) 光電変換装置
JP2001068709A (ja) 薄膜太陽電池
JPS62172761A (ja) 非晶質シリコン薄膜トランジスタおよびその製造方法
WO2021031392A1 (zh) 阵列基板的制备方法及阵列基板
JP2835415B2 (ja) 光電変換素子
JPH0651350A (ja) 表示装置
JPS622471B2 (enrdf_load_stackoverflow)