JPS6248033A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS6248033A
JPS6248033A JP60188847A JP18884785A JPS6248033A JP S6248033 A JPS6248033 A JP S6248033A JP 60188847 A JP60188847 A JP 60188847A JP 18884785 A JP18884785 A JP 18884785A JP S6248033 A JPS6248033 A JP S6248033A
Authority
JP
Japan
Prior art keywords
wire
capillary
recrystallized
laser
bonding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60188847A
Other languages
Japanese (ja)
Inventor
Takumi Matsukura
松倉　巧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60188847A priority Critical patent/JPS6248033A/en
Publication of JPS6248033A publication Critical patent/JPS6248033A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a desired loop shape by generating the deformation of a wire at the prescribed position at the time of horizontally moving a capillary. CONSTITUTION:After a metal ball 3 is formed at the end of a wire 2 projected from a capillary 1, the capillary 1 is moved down, and the ball 2 is press-bonded to an electrode 14 on a semiconductor element 4. After the capillary 1 is then lifted, a laser generated by a laser oscillator 12 is emitted through an optical fiber 13 to the desired potion of the wire 2 to raise the temperature of the portion higher than the recrystallizing temperature of a wire material. Thus, the wire 2 of the portion is recrystallized, and hardness is reduced from the other portion. Then, when the capillary 1 is moved horizontally, the wire 2 is deformed in the recrystallized portion having lower hardness than the other portion. Accordingly, the timing of the laser emission is altered to vary the height of the recrystallized portion, thereby facilitating the desired loop shape stably.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はワイヤがンディング方法に関し、特にワイヤの
ループ形状の安定化を図シ得るワイヤーボンディング方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wire bonding method, and more particularly to a wire bonding method that can stabilize the loop shape of a wire.

〔従来の技術〕[Conventional technology]

従来、半導体素子の電極とインナーリードを金属細線で
接続するボンディングは次のように行なわれていた。す
なわち、第３図（ａ）〜（ｄ）に示されるように、キャ
ピラリー１から突出させたワイヤー２の先端に金属ボー
ル３を形成させた後、キャピラリー１を下降させ、ボー
ル３を半導体素子４上の電極１４に圧着する（第３図（
ｂ））。次にキャピラリー１を上昇させてインナーリー
ド７へ移動させ、セカンドボンディングさせる（第３図
（ｅ）　）。Conventionally, bonding for connecting electrodes and inner leads of a semiconductor element with thin metal wires has been performed as follows. That is, as shown in FIGS. 3(a) to 3(d), a metal ball 3 is formed at the tip of a wire 2 protruding from a capillary 1, and then the capillary 1 is lowered and the ball 3 is attached to a semiconductor element 4. Crimp the upper electrode 14 (see Fig. 3 (
b)). Next, the capillary 1 is raised and moved to the inner lead 7 for second bonding (FIG. 3(e)).

次に、下クランプ５でワイヤーをはさみながら、キャピ
ラリーを上昇させてワイヤーを引きちぎりカットする（
第３図（ｄ））。Next, while holding the wire with the lower clamp 5, raise the capillary and tear off the wire to cut it (
Figure 3(d)).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上述した従来のボンディング方法では、
キャピラリー移動時のワイヤー変形位置がキャピラリー
の動き及びワイヤー硬度により一義的に決定されるため
、ループ形状の自由度がなく、しかも、安定性がないも
のとなって、第４品に示されるようにワイヤー２が半導
体素子ｌの周囲部４′あるいは素子投載部１５と接触し
ショート・不良をひきおこすという問題があった。特に
ボンデインゲスピードが早い場合やワイヤー長が長い場
合には、支点となるポールネック部３′でのワイヤー変
形がおこりやすく直線的なワイヤー形状になりやすい。However, in the conventional bonding method described above,
Since the wire deformation position when the capillary moves is uniquely determined by the movement of the capillary and the hardness of the wire, there is no degree of freedom in the loop shape and there is no stability, as shown in the fourth item. There is a problem in that the wire 2 comes into contact with the peripheral portion 4' of the semiconductor element 1 or the element mounting portion 15, causing short circuits and defects. Particularly when the bonding speed is high or the wire length is long, the wire is likely to be deformed at the pole neck portion 3', which serves as a fulcrum, and the wire is likely to have a straight wire shape.

本発明は前記問題点を解消するもので、キャピラリーの
水平移動時のワイヤー変形を一定の位置で発生させるこ
とにより、所望のループ形状を得るワイヤボンディング
方法を提供するものである。The present invention solves the above-mentioned problems and provides a wire bonding method in which a desired loop shape is obtained by causing wire deformation at a fixed position when a capillary is moved horizontally.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

本発明のワイヤボンディング方法は、キャピラリーの先
端に形成された金属ポールを電極へ圧着し、キャピラリ
ーを上昇させた後に、ワイヤーの所望する位置にレーザ
ーを照射して再結晶させ、その部分の硬度を低下させる
ことによシ、キャピラリーの水平移動時のワイヤー変形
を一定の位置で発生させることを特徴とするものである
。In the wire bonding method of the present invention, a metal pole formed at the tip of a capillary is crimped onto an electrode, the capillary is raised, and then a laser is irradiated to a desired position on the wire to recrystallize it and reduce the hardness of that part. By lowering the capillary, wire deformation occurs at a fixed position when the capillary moves horizontally.

〔実施例〕 以下、本発明の一実施例を図面を参照して説明する。〔Example〕 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第１図において、本体にワイヤ繰り出し装置８から繰り
出されたワイヤ２を案内するワイヤガイド１０とワイヤ
をクランプする上クランプ６が取シ付けられている。そ
して、前記上クランｆ６から。In FIG. 1, a wire guide 10 for guiding the wire 2 fed out from the wire feeding device 8 and an upper clamp 6 for clamping the wire are attached to the main body. And from the upper clan f6.

導出されたワイヤ２を下クラン７″５を介してアーム９
に堆り付けられたキャピラリー１に導入し、この下クラ
ンプ５とキャピラリー１との上下運動および水平運動に
よって半導体素子４とインナーリード７とをワイヤ２に
よって接続するようになっている。また前記アーム９に
はレーザー発振器１２からレーザーを導く光ファイバー
１３が取シ付けられており、任意のタイミングでワイヤ
２にレーザー°を照射するようになっている。The wire 2 led out is passed through the lower clamp 7''5 to the arm 9.
The semiconductor element 4 and the inner lead 7 are connected by the wire 2 by the vertical and horizontal movement of the lower clamp 5 and the capillary 1. Further, an optical fiber 13 is attached to the arm 9 to guide a laser beam from a laser oscillator 12, so that the wire 2 is irradiated with the laser beam at an arbitrary timing.

このような構成において、第３図（ａ）　ｔ　（ｂ）と
同様の工程を経て、ポール圧着後にキャピラリー１が上
昇した後に、第２図に示すように、レーザー発振器１２
によ多発生させたレーザーを光ファイバー１３を通して
ワイヤ２の所望する位置に照射してその部分の温度をワ
イヤ材料の再結晶温度よシ高くする。これによって、そ
の部分のワイヤ２は再結晶し、他の部分より硬度が低下
する。次てキャピラリー１は水平方向に移動するが、そ
の際ワイヤ２は他の部分よりも硬度の低い再結晶部分２
′で変形する為、レーザー照射のタイミングを変えて再
結晶部分２′の高さを変化させることによシ、所望する
ループ形状を容易にしかも安定して得ることができる。In such a configuration, after the capillary 1 rises after the pole is crimped through the same steps as in FIGS. 3(a) and 3(b), the laser oscillator 12
A laser beam generated at a high frequency is irradiated to a desired position of the wire 2 through the optical fiber 13 to raise the temperature of that part to a temperature higher than the recrystallization temperature of the wire material. As a result, the wire 2 in that portion recrystallizes and has lower hardness than other portions. Next, the capillary 1 moves horizontally, and at this time, the wire 2 is attached to the recrystallized part 2, which has a lower hardness than other parts.
Since the recrystallized portion 2' is deformed by changing the timing of laser irradiation and the height of the recrystallized portion 2', a desired loop shape can be easily and stably obtained.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明だよれば、金属ポールを電極
へ圧着し、キャピラリーを上昇させた後に、ワイヤの所
望する位置にレーザーを照射し、再結晶させてその部分
の硬度を低下させ、キャピラリーの水平移動時のワイヤ
ー変形を一定の位置で発生させることにより、所望のル
ープ形状を容易に得ることができるとともに、ループ形
状の安定性をも高めることができる。これにより、ワイ
ヤーと素子周囲部、素子投載部との接触、ショートが防
止でき、半導体ＩＣの製造歩留を向上させるとともに、
信頼性も著しく向上させることができる効果を有するも
のである。As explained above, according to the present invention, after the metal pole is crimped to the electrode and the capillary is raised, a laser is irradiated to a desired position of the wire to recrystallize and reduce the hardness of that part, and the capillary is raised. By causing wire deformation at a fixed position during horizontal movement of the wire, a desired loop shape can be easily obtained, and the stability of the loop shape can also be improved. This prevents contact and short circuits between the wire and the device surrounding area and the device mounting area, improving the manufacturing yield of semiconductor ICs, and
This has the effect of significantly improving reliability.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明を実行するだめのワイヤポンディング装
置の一実施例を示す概略図、第２図は本発明の作用説明
図、第３図（、）〜（ｄ）、第４図は従来のデンディン
グ方法を示す説明図である。 １・・・キャピラリー、２・・・ワイヤ、２′・・・ワ
イヤ再結晶部、３・・・ゾール、４・・・半導体素子、
５・・・下クランプ、６・・・上クランプ、７・・・イ
ンナーリード、８・・・ワイヤ繰り出し装置、９・・・
アーム、１０・・・ワイヤガイド、１１・・・トーチ、
１２・・・レーザー発振器、１３・・・光ファイバー、
１４・・・電極。Fig. 1 is a schematic diagram showing an embodiment of a wire bonding device for carrying out the present invention, Fig. 2 is an explanatory diagram of the operation of the present invention, Figs. 3 (,) to (d), and Fig. 4 are FIG. 2 is an explanatory diagram showing a conventional dending method. DESCRIPTION OF SYMBOLS 1... Capillary, 2... Wire, 2'... Wire recrystallization part, 3... Sol, 4... Semiconductor element,
5... Lower clamp, 6... Upper clamp, 7... Inner lead, 8... Wire feeding device, 9...
Arm, 10... wire guide, 11... torch,
12... Laser oscillator, 13... Optical fiber,
14...electrode.

Claims (1)

【特許請求の範囲】[Claims] （１）半導体素子の電極とインナーリードとを金属細線
でボンディングするワイヤボンディング方法において、
キャピラリーの先端に形成させた金属ボールを電極に圧
着し、キャピラリーを上昇させた後、ワイヤーの所望す
る位置にレーザーを照射して再結晶させ、キャピラリー
の水平移動時のワイヤー変形を前記レーザー照射位置で
発生させることを特徴とするワイヤボンディング方法。(1) In a wire bonding method in which electrodes of a semiconductor element and inner leads are bonded using thin metal wires,
A metal ball formed at the tip of the capillary is crimped onto an electrode, the capillary is raised, and then a laser is irradiated to a desired position on the wire to recrystallize it, and the deformation of the wire when the capillary moves horizontally is reflected from the laser irradiation position. A wire bonding method characterized by generating
JP60188847A 1985-08-28 1985-08-28 Wire bonding method Pending JPS6248033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60188847A JPS6248033A (en) 1985-08-28 1985-08-28 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60188847A JPS6248033A (en) 1985-08-28 1985-08-28 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS6248033A true JPS6248033A (en) 1987-03-02

Family

ID=16230880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60188847A Pending JPS6248033A (en) 1985-08-28 1985-08-28 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS6248033A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011181839A (en) * 2010-03-03 2011-09-15 Mitsubishi Electric Corp Wire bonding method
CN111048430A (en) * 2020-01-08 2020-04-21 广东工业大学 Method for processing ultrahigh-density space interconnection lead under light source guide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011181839A (en) * 2010-03-03 2011-09-15 Mitsubishi Electric Corp Wire bonding method
CN111048430A (en) * 2020-01-08 2020-04-21 广东工业大学 Method for processing ultrahigh-density space interconnection lead under light source guide

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