JPS6246063B2 - - Google Patents
Info
- Publication number
- JPS6246063B2 JPS6246063B2 JP19023281A JP19023281A JPS6246063B2 JP S6246063 B2 JPS6246063 B2 JP S6246063B2 JP 19023281 A JP19023281 A JP 19023281A JP 19023281 A JP19023281 A JP 19023281A JP S6246063 B2 JPS6246063 B2 JP S6246063B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide
- wiring
- electrode
- electrode metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19023281A JPS5891659A (ja) | 1981-11-26 | 1981-11-26 | 電極配線形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19023281A JPS5891659A (ja) | 1981-11-26 | 1981-11-26 | 電極配線形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5891659A JPS5891659A (ja) | 1983-05-31 |
| JPS6246063B2 true JPS6246063B2 (US08063081-20111122-C00044.png) | 1987-09-30 |
Family
ID=16254683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19023281A Granted JPS5891659A (ja) | 1981-11-26 | 1981-11-26 | 電極配線形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5891659A (US08063081-20111122-C00044.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6451472U (US08063081-20111122-C00044.png) * | 1987-09-29 | 1989-03-30 |
-
1981
- 1981-11-26 JP JP19023281A patent/JPS5891659A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6451472U (US08063081-20111122-C00044.png) * | 1987-09-29 | 1989-03-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5891659A (ja) | 1983-05-31 |
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