JPS6244860B2 - - Google Patents

Info

Publication number
JPS6244860B2
JPS6244860B2 JP56177760A JP17776081A JPS6244860B2 JP S6244860 B2 JPS6244860 B2 JP S6244860B2 JP 56177760 A JP56177760 A JP 56177760A JP 17776081 A JP17776081 A JP 17776081A JP S6244860 B2 JPS6244860 B2 JP S6244860B2
Authority
JP
Japan
Prior art keywords
diode
transistor
base
chip
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56177760A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5879747A (ja
Inventor
Toshio Shigekane
Motoo Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP56177760A priority Critical patent/JPS5879747A/ja
Publication of JPS5879747A publication Critical patent/JPS5879747A/ja
Publication of JPS6244860B2 publication Critical patent/JPS6244860B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56177760A 1981-11-05 1981-11-05 半導体装置 Granted JPS5879747A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56177760A JPS5879747A (ja) 1981-11-05 1981-11-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56177760A JPS5879747A (ja) 1981-11-05 1981-11-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS5879747A JPS5879747A (ja) 1983-05-13
JPS6244860B2 true JPS6244860B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=16036643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56177760A Granted JPS5879747A (ja) 1981-11-05 1981-11-05 半導体装置

Country Status (1)

Country Link
JP (1) JPS5879747A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2548415Y2 (ja) * 1990-02-20 1997-09-24 澤藤電機株式会社 自励交流発電機の電圧調整装置

Also Published As

Publication number Publication date
JPS5879747A (ja) 1983-05-13

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