JPS6244357B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic storage device, and more particularly to an improvement in the loop configuration of a magnetic storage device.

A magnetic storage device using a cylindrical magnetic domain (Bubble domain) has a configuration as shown in FIG. That is, when a constant bias magnetic field B is applied perpendicularly to the surface of a magnetic thin plate 1, such as orthoferrite or magnetic garnet, which has an axis of easy magnetization in the direction perpendicular to its surface, most of the magnetic thin plate 1 will move in that direction. However, a part remains magnetized in the opposite direction to form a cylindrical magnetic domain 2. This cylindrical magnetic domain 2
is extremely stable when a bias magnetic field is applied, but it moves freely in the direction of a magnetic field gradient above a certain level parallel to the surface of the magnetic thin plate 1. For example, a T/I bar pattern 3 is formed on the upper surface of the magnetic thin plate 1 using a high permeability material such as permalloy, and a rotating magnetic field H rotating parallel to the surface of the magnetic thin plate 1 is formed.
When _R is added, T・I bar pattern 3 has signs +, -
The cylindrical magnetic domain 2 is magnetized as shown in , and the cylindrical magnetic domain 2 is attracted or repelled, and the cylindrical magnetic domain 2 is exposed to the rotating magnetic field H _R
T/I bar pattern 3 in the direction according to the rotation direction of
move along. This movement of the cylindrical magnetic domain 2 is used to perform logic operations and storage operations.

FIG. 2 is an explanatory diagram of the loop configuration of a conventional magnetic storage device using cylindrical magnetic domains, in which a read major line 4, a write major line 5, and a plurality of major lines are formed on a magnetic thin plate 1 by the above-mentioned T/I bar pattern. Each minor loop 6 and the read major line 4 are coupled by a copy read gate 7, and each minor loop 6 and the write major line 5 are coupled by a write gate 8. , these gates 7
and 8 perform transfer, transfer, and deletion of cylindrical magnetic domains. 9 is a detector for detecting the presence of a cylindrical magnetic domain, and 10 is a cylindrical magnetic domain generator.

In such a configuration, each piece of information is stored in parallel in the minor loop 6, and its position is sequentially moved by the rotating magnetic field H _R applied to the magnetic thin plate 1. Therefore, when reading, each piece of information is stored in parallel.
After performing serial conversion, it is detected and a series of information is obtained. Therefore, even if there is a defective loop 6a in the minor loop 6, the entire device can be used as a good product by not using that position, which has the advantage of improving yield.However, if such a defective loop 6a is skipped, In the data within one page to be detected, a bit corresponding to the defective loop 6a is omitted. Therefore, when data is read and sent to the outside, a data string conversion circuit is required to compress these missing bit positions, and when writing data from the outside, a data string conversion circuit is required to create a space at the position corresponding to the defect. , control becomes extremely complex. FIG. 3a is an explanatory diagram of the read data when the defective loop 6a is in the fourth loop and the data string conversion circuit is not used, and FIG. 3b is the read data when the data string conversion circuit is used. FIG.

SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetic storage device having a loop configuration that eliminates the above-mentioned drawbacks and eliminates the need for a data string conversion circuit that is required in a conventional loop configuration. In order to achieve this, a write major line and a read major line in which a cylindrical magnetic domain is propagated by a rotating magnetic field are provided on a magnetic thin plate, and the write major line and read major line are connected by a plurality of minor lines, and each minor line has a plurality of minor lines. It is characterized by being joined by the book's minor loop.

Preferred embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 4 is an explanatory diagram showing an embodiment of the loop configuration of the magnetic storage device according to the present invention, in which the magnetic thin plate 1
A read major line 4, a write major line 5, a plurality of minor lines 11, and a plurality of minor loops 6 are arranged, and each minor line 11 and the plurality of minor loops 6 are connected by a duplicate write/read gate 12. , the minor line 11 connected to the plurality of minor loops 6 is connected to the write major line 5 by a plurality of write gates 13, and is connected to the read major line 4 by a read gate 14, and the read major line 4 of each minor line 11 is An eraser 15 is provided at the side end. Furthermore, the readout measure line 4 is connected to the detector 9.
In addition, a write major line 5 is connected to a generator 10 for writing and reading information. That is, in a magnetic storage device that stores information in N columns and M loops, N minor lines 11, a write gate 13, a read gate 14, an eraser 15, and M×
It is composed of N minor loops 6 and a copy read gate 12. Note that it goes without saying that the read gate 14 may be a switching gate or a duplication gate.

In a magnetic storage device having such a configuration, writing and reading of information is performed for each loop according to the column number by the operation of each gate. ……
N column...) If there is a defect in any minor loop 6, if the minor loop 6 in the same order in each column is regarded as a defective loop and information is not written, the page corresponding to that position will not be written. If no information is read out and the third loop of the second column is defective, for example, as shown in the explanatory view of read data in FIG. 5, the third page becomes a defective page and no information is read out to the third page. In other words, when comparing FIG. 3a showing the read data of the conventional example and FIG. 5 showing the read data according to the present invention, it is found that there is no missing data corresponding to a defective loop in each page, and there is no data missing in the entire page. There is a big difference in that. This means that the minor loop 6 in the conventional example is different from the minor loop 6 in the present invention, in which there are multiple minor loops 6 and minor line 1.
1, indicating that the reading of 1 bit in the conventional example corresponds to the reading of 1 loop in the present invention. Generally, magnetic storage devices are controlled on a page-by-page basis, so if writing and reading are prohibited for specific pages, a complicated configuration such as a data string conversion circuit is not required.

Furthermore, when the present invention is used as a memory system, data exchange with the outside is generally performed in units of bytes (8 bits). In conventional devices, the number of data in one page is 256 bits for 256K bits and 512 bits for 1M bits, so even if you want to transfer 1 byte at a time, you have to read in units of 32 or 64 bytes and discard unnecessary ones. I needed a way to say no. In the magnetic storage device according to the present invention, by providing eight minor lines 11 corresponding to data bits, it is possible to transfer data in units of one byte. In this case, there is an advantage that the access time is greatly shortened compared to the conventional configuration in which the minor loop 6 is made into 8 loops and the number of bits in one loop is increased to configure a large capacity chip. When used as a memory system, it often has error check bits or error correction bits in addition to data bits. In this case, the total number of minor lines 11 according to the present invention is 8 data lines + error correction or check line a. Although required, a is generally 8 or less, and is determined by an error correction method or an error check method.

As is clear from the above explanation, according to the magnetic storage device of the present invention, even if a defective loop occurs, if a loop in the same order in each column is regarded as a defect and information is not written, it is possible to No information is read on the page where the page is, and the entire page is omitted. However, since the magnetic storage device is controlled on a page-by-page basis, by prohibiting writing and reading to a specific page, information can be read accurately without the need for a complicated configuration such as a data string conversion circuit. Furthermore, when the number of minor lines is set to eight and fewer than eight error correction or check lines are provided, there is an advantage that the access time can be greatly shortened in a memory system that exchanges information in bytes.

[Brief explanation of the drawing]

Fig. 1 is an explanatory diagram of the principle of a magnetic storage device using cylindrical magnetic domains, Fig. 2 is an explanatory diagram of a loop configuration of a conventional magnetic storage device, and Fig. 3a is an explanatory diagram of read data of a conventional magnetic storage device. FIG. b is an explanatory diagram of read data when a data string conversion circuit is used in a conventional magnetic storage device, FIG. 4 is an explanatory diagram showing an example of the loop configuration of the magnetic storage device according to the present invention, and FIG. FIG. 2 is an explanatory diagram of read data of the magnetic storage device according to the present invention. In the figure, 1 is a magnetic thin plate, 2 is a cylindrical magnetic domain, and 3 is a magnetic thin plate.
is a T/I bar pattern, 4 is a read major line, 5 is a write major line, 6 is a minor loop, 6a is a defective loop, 7 is a duplicate read gate, 8 is a write gate, 9 is a detector, 10 is a generator, 11 is a 12 is a duplicate read/write gate, 13 is a write gate, 14 is a read gate, and 15 is an eraser.

Claims (1)

[Claims] 1 Applying a bias magnetic field in the direction of the easy axis of magnetization to a magnetic thin plate having an axis of easy magnetization perpendicular to the plane of the thin plate,
In the resulting magnetic storage device using cylindrical magnetic domains, the thin magnetic plate is provided with a write major line and a read major line through which the cylindrical magnetic domain propagates by a rotating magnetic field, and the write major line and the read major line are formed by a plurality of minor minor lines. A magnetic storage device characterized in that the minor lines are connected by lines, and each of the minor lines is connected by a plurality of minor loops.