JPS6160503B2 - - Google Patents

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Publication number
JPS6160503B2
JPS6160503B2 JP54168100A JP16810079A JPS6160503B2 JP S6160503 B2 JPS6160503 B2 JP S6160503B2 JP 54168100 A JP54168100 A JP 54168100A JP 16810079 A JP16810079 A JP 16810079A JP S6160503 B2 JPS6160503 B2 JP S6160503B2
Authority
JP
Japan
Prior art keywords
information
block
propagation path
information storage
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54168100A
Other languages
Japanese (ja)
Other versions
JPS5693168A (en
Inventor
Mikio Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16810079A priority Critical patent/JPS5693168A/en
Publication of JPS5693168A publication Critical patent/JPS5693168A/en
Publication of JPS6160503B2 publication Critical patent/JPS6160503B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は磁気バブルメモリチツプに関し、特に
そのゲート回路の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to magnetic bubble memory chips, and more particularly to improvements in gate circuits thereof.

一般に磁性薄膜は面内方向に磁区の磁化容易軸
を持つているが、ある種の磁性薄膜、例えばオル
ソフエライトや磁性ガーネツト等においては磁区
が垂直な磁化容易軸を持つている。この薄膜に垂
直方向の磁界を加えて行くと、ストリツプ状であ
つた磁区はある磁界の強さで円筒磁区(バブルド
メイン)となる。このバブルドメインは直径が数
μm以下であり磁界の勾配により磁性薄膜内を自
由に動かすことができることから、このバブルド
メインをメモリ素子として利用したのが磁気バブ
ルメモリ装置である。現在この磁気バブルメモリ
装置のメモリチツプの構成は、第1図に示す如き
ブロツクリプリケート方式が主流となりつつあ
る。これについて簡単に説明すると、バブル発生
器1に繋がつた書き込み用伝播路2に複数個の情
報蓄積ループ3が接続され、またこの複数個の情
報蓄積ループ3は検出器4に繋がつた読み出し用
伝播路5にそれぞれ接続し、さらに書き込み用伝
播路2と情報蓄積ループ3との中間にはトランス
フアインゲート6が設けられ情報蓄積ループ3と
読み出し用伝播路5との中間にはトランスフアア
ウトゲート7が設けられている。ところがこのよ
うなメモリチツプにおいて、そのメモリ容量が増
大し、蓄積ループの数を多くした場合にはゲート
が長くなり、その抵抗値が大きくなり、電源電圧
を高く、かつ容量の大なるものが必要となる。本
発明はこの欠点を改良するために案出されたもの
である。
Generally, magnetic thin films have magnetic domains with easy axes of magnetization in the in-plane direction, but in some types of magnetic thin films, such as orthoferrite and magnetic garnet, magnetic domains have vertical easy axes of magnetization. When a perpendicular magnetic field is applied to this thin film, the strip-shaped magnetic domains become cylindrical magnetic domains (bubble domains) at a certain magnetic field strength. This bubble domain has a diameter of several μm or less and can move freely within the magnetic thin film due to the gradient of the magnetic field. Therefore, a magnetic bubble memory device utilizes this bubble domain as a memory element. Currently, the block replica system as shown in FIG. 1 is becoming mainstream in the structure of memory chips in magnetic bubble memory devices. To briefly explain this, a plurality of information storage loops 3 are connected to a write propagation path 2 connected to a bubble generator 1, and a plurality of information storage loops 3 are connected to a read propagation path 2 connected to a detector 4. Further, a transfer-in gate 6 is provided between the write propagation path 2 and the information storage loop 3, and a transfer-out gate 7 is provided between the information storage loop 3 and the read propagation path 5. is provided. However, as the memory capacity of such memory chips increases and the number of storage loops increases, the gate becomes longer and its resistance value increases, requiring a higher power supply voltage and larger capacity. Become. The present invention has been devised to improve this drawback.

このため本発明においては、1本の情報書き込
み用伝播路と1本の情報読み出し用伝播路とに繋
がつた複数個の情報蓄積ループを持つた磁気バブ
ルメモリチツプにおいて、該情報蓄積ループを複
数個のブロツクに分け、且つ入力ゲートおよび出
力ゲートの導体パターンを各ブロツク毎に分離し
たことを特徴とするものである。
Therefore, in the present invention, in a magnetic bubble memory chip having a plurality of information storage loops connected to one information writing propagation path and one information reading propagation path, the plurality of information storage loops are connected to one information writing propagation path and one information reading propagation path. It is characterized in that it is divided into blocks, and the conductor patterns of the input gate and output gate are separated for each block.

また1本の情報書き込み用伝播路と1本の情報
読み出し用伝播路とに繋がつた複数個の情報蓄積
ループを持つた磁気バブルメモリチツプにおい
て、該情報蓄積ループを複数個のブロツクに分
け、そのループ構成ビツト数をブロツク内では同
一とし、かつブロツク間では異なるように構成し
たことを特徴とするものである。
Furthermore, in a magnetic bubble memory chip that has a plurality of information storage loops connected to one information writing propagation path and one information reading propagation path, the information storage loop is divided into a plurality of blocks. It is characterized in that the number of loop configuration bits is the same within a block and is different between blocks.

以下、添付図面に基づいて本発明の実施例につ
き詳細に説明する。
Hereinafter, embodiments of the present invention will be described in detail based on the accompanying drawings.

第2図に実施例の構成を示す。図において符号
1はバブル発生器、2は情報書き込み用伝播路、
3は情報蓄積ループ、4は検出器、5は情報読み
出し用伝播路であり、情報蓄積ループ3は複数個
が設けられていて各々は一方をバブル発生器1に
繋がれた情報書き込み用伝播路2に接続され反対
側を検出器4に繋がれた情報読み出し用伝播路5
に接続され、さらにこれらの情報蓄積ループ3は
複数個のブロツクA,B,Cに分けられ、その各
ブロツク毎に入力ゲート6-1,6-2,6-3が情報
書き込み伝播路2と情報蓄積ループ3との間に設
けられ、出力ゲート7-1,7-2,7-3が情報読み
出し伝播路5と情報蓄積ループ3との間に設けら
れている。従つて入力ゲート6-1〜6-3及び出力
ゲート7-1〜7-3の各ゲートの導体パターンは各
ブロツク毎に分離されている。なお8は消去器で
ある。
FIG. 2 shows the configuration of the embodiment. In the figure, numeral 1 is a bubble generator, 2 is a propagation path for information writing,
3 is an information storage loop, 4 is a detector, and 5 is a propagation path for information reading. A plurality of information storage loops 3 are provided, each of which is an information writing propagation path with one end connected to the bubble generator 1. 2 and the opposite side is connected to the detector 4.
Furthermore, these information storage loops 3 are divided into a plurality of blocks A, B, and C, and the input gates 6 -1 , 6 -2 , and 6 -3 of each block are connected to the information write propagation path 2 . Output gates 7 -1 , 7 -2 , and 7 -3 are provided between the information readout propagation path 5 and the information storage loop 3 . Therefore, the conductor patterns of the input gates 6 -1 to 6 -3 and the output gates 7 -1 to 7 -3 are separated for each block. Note that 8 is an eraser.

このように構成された本実施例は2通りの使用
方法がある。その第1は全べての入力ゲート6-1
〜6-3又は全べての出力ゲート7-1〜7-3を同時
に作動する方法である。この場合情報の書き込み
および読み出し動作は従来と変らないが、入力ゲ
ートおよび出力ゲートが複数個に分割されてお
り、1個のゲートの抵抗値は小さくなつているた
め電源電圧を下げることができる。但しゲート駆
動回路はブロツク数(ゲート数)だけ必要であ
る。
There are two ways to use this embodiment configured in this way. The first is all input gates 6 -1
6-3 or all output gates 7-1 to 7-3 are activated simultaneously. In this case, the information writing and reading operations are the same as before, but the input gate and output gate are divided into a plurality of parts, and the resistance value of each gate is reduced, so that the power supply voltage can be lowered. However, the number of gate drive circuits required is equal to the number of blocks (number of gates).

第2の使用方法は各ブロツクに入れる情報の間
にあきビツトを入れ順次各ブロツクに書き込み又
は読み出しを行なう方法で、例えば第3図の如く
〇印で示す必要情報の間に×印で示すあきビツト
を配置し、先ずこのC′部分を第2図の入力ゲー
ト6-3を開いてCブロツクに入れ、次に1ビツト
のタイミングをずらして入力ゲート6-2を開き
B′部分をBブロツクに入れ、次にA′部分をAブ
ロツクに入れるようにする。このようにすると入
力ゲート6-1〜6-3を少しづつタイミングをずら
して動作させることができるのでゲート駆動回路
を1個で共用することができる。なお読み出し側
もCブロツク、Bブロツク、Aブロツクの順で書
き込み側と同じタイミングで出力ゲートを開けば
書き込んだ情報と同じ情報を読み出すことができ
る。
The second usage method is to insert a blank bit between the information to be put in each block and write or read from each block sequentially.For example, as shown in Figure 3, there is a gap between the necessary information indicated by the ○ mark, as shown by the cross mark. After arranging the bits, first open the input gate 6-3 in Fig. 2 and put this C' portion into the C block, then shift the timing of one bit and open the input gate 6-2.
Put part B' into block B, then put part A' into block A. In this way, the input gates 6 -1 to 6 -3 can be operated with slightly different timings, so that one gate drive circuit can be used in common. Note that on the reading side, if the output gates are opened in the order of C block, B block, and A block at the same timing as on the writing side, the same information as written information can be read out.

次に第2の実施例を第4図に示す。本実施例の
構成が前実施例と異なるところは入力ゲート6を
各ブロツクに分割せず(分割しても良い)、かつ
各ブロツクA,B,Cのブロツク内のループ構成
ビツトは同一であるが、ブロツク間では異なるよ
うにしたことである。例えばAブロツクのビツト
数をnビツトとすればBブロツクはn+mビツ
ト、Cブロツクはn+2mビツトとする。
Next, a second embodiment is shown in FIG. The configuration of this embodiment differs from the previous embodiment in that the input gate 6 is not divided into blocks (although it may be divided), and the loop configuration bits in each block A, B, and C are the same. However, it is different between blocks. For example, if the A block has n bits, the B block has n+m bits, and the C block has n+2m bits.

このように構成された本実施例は次の如くにし
て用いられる。先ず情報のビツト構成を第5図の
如く各ブロツクの情報蓄積ループに対応して分割
しその間に×印で示すあきビツトmを挿入する。
この分割した情報A′,B′,C′は同時に入力ゲー
ト6を介して各ブロツクA,B,Cにそれぞれ書
き込まれる。次に読み出すときは先ず出力ゲート
-1を働かせAブロツクに書き込まれている情報
A′を読み出し、次にmビツト遅らせて出力ゲー
ト7-2を働かせBブロツクに書き込まれている情
報B′を読み出し、さらにmビツト遅らせて出力ゲ
ート7-3を働かせCブロツクに書き込まれている
情報C′を読み出すのである。このようにして読
み出された情報はあきビツトの無いものとなる。
また出力ゲートは前実施例と同様に各ブロツク毎
にタイミングをずらして動作するためゲート制御
回路(電源および切換回路)は1個で良い。なお
出力ゲートはバブルを分割する必要から大電力を
要するので各ブロツクに分割したのであるが、入
力ゲートは単にスイツチング作用のみで小電力で
良いので1本としたが電源電圧を下げるためには
各ブロツク毎に分割した方が良い。
This embodiment thus configured is used in the following manner. First, the bit structure of the information is divided into sections corresponding to the information storage loops of each block as shown in FIG. 5, and empty bits m indicated by cross marks are inserted between the sections.
The divided information A', B', and C' are simultaneously written into each block A, B, and C via the input gate 6, respectively. When reading next time, first activate output gate 7-1 to read the information written in A block.
A' is read, then delayed by m bits, output gate 7-2 is activated, information B' written in B block is read out, information B' is further delayed by m bits, output gate 7-3 is activated, and information written in C block is read. Information C' is read out. The information read in this way has no empty bits.
Further, as in the previous embodiment, the output gate operates with timing shifted for each block, so only one gate control circuit (power supply and switching circuit) is required. Note that the output gate requires a large amount of power to split the bubble, so it was divided into each block.The input gate only has a switching function and requires a small amount of power, so it was made into one gate, but in order to lower the power supply voltage, each block was divided into two. It is better to divide it into blocks.

以上説明した如く本発明の磁気バブルメモリチ
ツプは情報蓄積ループを複数ブロツクに分け、各
ブロツクに入出力ゲートを設けることにより電源
電圧を下げることを可能とし、また各入出力ゲー
トの動作タイミングを順次ずらすことによりゲー
ト制御回路を1個の小容量のもので実質的に従来
通りの機能を果すことを可能としたものである。
As explained above, the magnetic bubble memory chip of the present invention divides the information storage loop into a plurality of blocks, and by providing input/output gates in each block, it is possible to lower the power supply voltage, and the operation timing of each input/output gate can be sequentially adjusted. By shifting the gate control circuit, it is possible to use a single gate control circuit with a small capacity to perform substantially the same function as before.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の磁気バブルメモリチツプにおけ
るブロツクリプリケート方式の1例の構成図、第
2図は本発明にかかる第1の実施例の磁気バブル
メモリチツプの構成図、第3図は第1の実施例に
用いる情報のビツト構成図、第4図は第2の実施
例の磁気バブルメモリチツプの構成図、第5図は
第2の実施例に用いる情報のビツト構成図であ
る。 1…バブル発生器、2…情報書き込み用伝播
路、3…情報蓄積ループ、4…検出器、5…情報
読み出し用伝播路、6,6-1,6-2,6-3、…入
力ゲート、7,7-1,7-2,7-3…出力ゲート、
8…消去器。
FIG. 1 is a block diagram of an example of a block replication method in a conventional magnetic bubble memory chip, FIG. 2 is a block diagram of a first embodiment of a magnetic bubble memory chip according to the present invention, and FIG. FIG. 4 is a diagram showing the configuration of the magnetic bubble memory chip of the second embodiment, and FIG. 5 is a diagram showing the bit configuration of the information used in the second embodiment. DESCRIPTION OF SYMBOLS 1... Bubble generator, 2... Information writing propagation path, 3... Information storage loop, 4... Detector, 5... Information reading propagation path, 6, 6 -1 , 6 -2 , 6 -3 ,... Input gate , 7, 7 -1 , 7 -2 , 7 -3 ...output gate,
8... Eraser.

Claims (1)

【特許請求の範囲】 1 1本の情報書き込み用伝播路と1本の情報読
み出し用伝播路とに繋がつた複数個の情報蓄積ル
ープを持つた磁気バブルメモリチツプにおいて、
該情報蓄積ループを複数個のブロツクに分け、且
つ入力ゲートおよび出力ゲートの導体パターンを
各ブロツク毎に分離したことを特徴とする磁気バ
ブルメモリチツプ。 2 1本の情報書き込み用伝播路と1本の情報読
み出し用伝播路とに繋がつた複数個の情報蓄積ル
ープを持つた磁気バブルメモリチツプにおいて、
該情報蓄積ループを複数個のブロツクに分け、そ
のループ構成ビツト数をブロツク内では同一と
し、かつブロツク間では異なるように構成したこ
とを特徴とする磁気バブルメモリチツプ。
[Claims] 1. A magnetic bubble memory chip having a plurality of information storage loops connected to one information writing propagation path and one information reading propagation path,
A magnetic bubble memory chip characterized in that the information storage loop is divided into a plurality of blocks, and the conductor patterns of input gates and output gates are separated for each block. 2. In a magnetic bubble memory chip having a plurality of information storage loops connected to one information writing propagation path and one information reading propagation path,
A magnetic bubble memory chip characterized in that the information storage loop is divided into a plurality of blocks, and the number of bits constituting the loop is the same within each block and different between blocks.
JP16810079A 1979-12-26 1979-12-26 Magnetic bubble memory chip Granted JPS5693168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16810079A JPS5693168A (en) 1979-12-26 1979-12-26 Magnetic bubble memory chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16810079A JPS5693168A (en) 1979-12-26 1979-12-26 Magnetic bubble memory chip

Publications (2)

Publication Number Publication Date
JPS5693168A JPS5693168A (en) 1981-07-28
JPS6160503B2 true JPS6160503B2 (en) 1986-12-20

Family

ID=15861830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16810079A Granted JPS5693168A (en) 1979-12-26 1979-12-26 Magnetic bubble memory chip

Country Status (1)

Country Link
JP (1) JPS5693168A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945682A (en) * 1982-09-08 1984-03-14 Fujitsu Ltd Constituting method of magnetic bubble memory element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263030A (en) * 1975-11-19 1977-05-25 Rockwell International Corp Magnetic bubble domain device
JPS5430743A (en) * 1977-08-10 1979-03-07 Rockwell International Corp Magnetic bubble domain device
JPS5534330A (en) * 1978-08-31 1980-03-10 Fujitsu Ltd Magnetic bubble memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263030A (en) * 1975-11-19 1977-05-25 Rockwell International Corp Magnetic bubble domain device
JPS5430743A (en) * 1977-08-10 1979-03-07 Rockwell International Corp Magnetic bubble domain device
JPS5534330A (en) * 1978-08-31 1980-03-10 Fujitsu Ltd Magnetic bubble memory device

Also Published As

Publication number Publication date
JPS5693168A (en) 1981-07-28

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