JPS5945682A - Constituting method of magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To handle memories of different byte constitution by switching plural generators and detectors with an external circuit. CONSTITUTION:A major line 2 for writing where four generators 1-1-1-4, etc., are connected and a major line 4 for reading where four detectors 5-5-5-4, etc. are connected by n-line minor loops 3-1-3-n for every generator and every detector. For example, where the generator 1-1 and detector 5-4 are selected by the external circuit, 4n pieces of information for every page are controlled; when the generators 1-1 and 1-3, a transfer gate 6-2, detectors 5-2 and 5-4, etc., are activated selectively, write information by the generator 1-1 is read by the detector 5-2 and information by the generator 1-3 is read by the detector 5-4, controlling 2n pieces of information. Thus, the constituting method of titled magnetic bubble memory element which handles memories of different constitution is realized.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to an improvement in the construction method of a magnetic bubble memo 'J7 child.

<2) Problems of the prior art [The storage capacity of the magnetic bubbles stored in the IJ element has increased over the years due to advances in fabrication technology and materials; Bubble diameter 1
] Transfer patterns made of materials such as metal alloys, metal alloys, Ni-C++ alloys, etc. are becoming smaller and smaller.

For example, in the case of an IM W 'iA I M bit memory element, the minimum pattern size is 1 μm, and a 10 mm square magnetic garnet crystal 1iy! Above, the entire pattern of the L-child circuit is formed.

For such memory elements, if a high-performance projection exposure machine is used, as is the case with the currently used Bakun forming method, the possible transfer area is 10 mm square, but the yield due to the amount of material used must be taken into account. However, a pattern area of 5 x 10 mm in the center with good molecular capacity is exposed twice to form a circuit pattern of 10 nm square, which is used as one element.

A memory device has been proposed in which this method is extended to L-, and a plurality of blocks of the same major/minor II and It configuration are formed on one element.

However, in this bubble memory configuration, it is impossible to take the byte configuration of the diagonal number type term by an external circuit. It is an object of the present invention to provide a method for configuring a baffle memory element that can be applied to memory models having different configurations.

(4) Structure of the output 111j and its purpose according to the present invention, C, within the 1' nop?
Anti-respect (1 in contact with solid generator and d Pig generator)
One major line for cutting ¥1 in the original 4-, a straight tongue tip (l/) detector, and the detector (/l: contact Δ
・）℃Z/・IA'-'s tFf protrusion, the major lines and the minor loop of the summer that connects to these major lines, and the generator and detector are connected to ・V by the external circuit. The feature is that the number of minor loops assigned to each geo rake and detector can be changed by switching (achieved by providing a method for configuring one IB bubble memory).

75) Examples of the invention Hereinafter, embodiments of the invention will be described in detail with reference to the drawings.

1. Method of constructing a magnetic bubble memory device according to the X invention'
f: This is a diagram for explanation.

In the figure, 1-1 to 1-4 are generators, 2 is a major line for writing, : U-1 to 3 is a VS minor loop, 4 is +-j is a major line for reading, 5 is a major line for reading.
~5 is a diactor, 6-□~6-3 is a transformer 1-4, and it shows that.

Moku'yumi/A1i II &;l: 4 + solid generators 1-1 to 1-4 are connected to -11 reading major line 2, and readout major line 4 (to 41 solid generators) Detectors 5-1 to 5-4 are connected 11) 1-ζJ
are doing. Note that 5-1 to 5-3 excluding detector 5-4
i'j-f':;it, zoso] are connected to detectors 5-1 to 5-3 via transfer gates 6-0 to 6-3. 1 generator and n minor loops per detector are provided between the major line 2 for writing and the major line 4 for reading.
．． It's there.

Note that the X embodiment is a case in which there are four generators and four detectors, but the number may be eight, sixteen, etc.

In this embodiment, the VC4t11 is constructed, the generators 1 to 1, and the transfer gates 6-□ to--
1-4 rod 6 Detector 5-1 to 5-4 are all outside) 41 (controller 3) (light comes into contact with the roller). Now, for example, if the controller circuit is configured to operate only the generator 1-1 and the detector 5-4, the diene 1', the detector 1-1, and the detector 5-4 will generate 4nl per page. 1f
'f-information can be controlled. Also, by operating generators 1-0 and 1-3, transfer gate 6-2, and detectors 5-2 and 5-4, the fLfc information written by generator 1-□ is transferred to daylight camera 5.
-2 and written by generator 1-3.
．． The 1H information is read out by the detector 5-4, part 1.
Each can control 2n pieces of 1n information.

. -Also, by making all the generators 1-1 to l-4, tiger/sphere gates 6-□ to 6-3, and detectors 5-4 to 5-4, the total number of generators and detectors is set to vn. information can be controlled.

In this way, the present invention provides a fixed number of minors (n) per generator and detector, and by counting all generators and detectors, it is possible to receive n bits per generator and detector. In addition, by using generators, two detectors, and detectors for every other element, each generator and detector can have 2n bits, so that elements with four different pit configurations, such as 64 bytes, 128 bytes, etc. The Hf function is achieved in one chip.

Naomi/li! Although we have shown an example of changing the byte configuration f l'T by external control using the same chip, it is also possible to create devices with different byte configurations using the same chip and selecting terminals during bonding. It is also possible. However, in this case, external control becomes unnecessary.

(6) Effects of the Invention As explained in detail above, the method of configuring the magnetic bubble memory element according to the present invention is capable of changing to a plurality of different byte configurations with a simple configuration, Magnetic baffle memo IJ pJ child application i@expand →
“It has a great effect.

[Brief explanation of the drawing]

L'41 ilj: This is a diagram for explaining the magnetic bubble memory Yonago Birch 1 method according to the present invention. 2
is the major line for writing, 3-1~3-o1/;t
Major f loop, 4 is the major line for reading, 5
-1 to 5-4 are detectors, and 6-1 to 6-3 are transfer gates. Patent Applicant Tomijutori Co., Ltd. Patent Application Agent Patent Attorney Akira Aoki Patent Attorney Kazuyuki Nishidate Patent Attorney 1) Male Patent Attorney Akira Yamaguchi

Claims (1)

[Claims] 1.In one chip, a plurality of generators and one major line for rock digging connected to the generators,
It has a plurality of detector I supports, one read-out four-measure line connected to the detector, and a plurality of one-piece f/'l ma/f-nare lubes tangential to these major lines, and the generator and Switching the detector by an external circuit C (one generation V-
Switch the number of minor loops that apply W+lIg to the light and detector! I: A method for configuring a magnetic bubble memory element with an r characteristic.