JPS6137700B2 - - Google Patents
Info
- Publication number
- JPS6137700B2 JPS6137700B2 JP16918979A JP16918979A JPS6137700B2 JP S6137700 B2 JPS6137700 B2 JP S6137700B2 JP 16918979 A JP16918979 A JP 16918979A JP 16918979 A JP16918979 A JP 16918979A JP S6137700 B2 JPS6137700 B2 JP S6137700B2
- Authority
- JP
- Japan
- Prior art keywords
- information
- propagation path
- gate
- information storage
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006870 function Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 4
- 230000005381 magnetic domain Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
Description
【発明の詳細な説明】
本発明は磁気バブルメモリチツプの改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in magnetic bubble memory chips.
一般に磁性薄膜は面内方向に磁区の磁化容易軸
を持つているが、ある種の磁性薄膜、例えばオル
ソフエライトや磁性ガーネツト等においては磁区
が膜面に対し垂直な磁化容易軸を持つている。こ
の薄膜に垂直方向の磁界を加えて行くと、ストリ
ツプ状であつた磁区はある磁界の強さで円筒磁区
(バブルドメイン)となる。このバブルドメイン
は直径が数μm以下であり磁界の勾配により磁性
薄膜内を自由に動かすことができることから、こ
のバブルドメインをメモリ素子として利用したの
が磁気バブルメモモリ装置である。現在この磁気
バブルメモリ装置に用いられるメモリチツプの構
成は、第1図に示す如きブロツクリプリケート方
式が主流となりつつある。これについて簡単に説
明すると、バブル発生器1に繋がつた情報書き込
み用伝播路2に複数個の情報蓄績ループ3が接続
され、またこの複数個の情報蓄積ループ3の反対
側は検出器4に繋がつた情報読み出し用伝播路5
にそれぞれ接続しており、さらに情報書き込み用
播路2と情報蓄積ループ3との中間にはトランス
フアインゲート6が設けられ、情報蓄積ループ3
と情報読み出し用伝播路5との中間にはトランス
フアアウトゲート7が設けられている。なお情報
書き込み用伝播路2の終端は消去器8に接続して
いる。このようなメモリチツプにおいて、情報を
読み出したい場合、情報が読み出し側ゲートを通
過した直後であれば蓄積ループをほぼ一周するま
で蓄積ループから読出すことができない。本発明
はこの欠点を改良するために案出されたものであ
る。 Generally, magnetic thin films have magnetic domains with easy magnetization axes in the in-plane direction, but in some types of magnetic thin films, such as orthoferrite and magnetic garnet, magnetic domains have easy magnetization axes perpendicular to the film plane. When a perpendicular magnetic field is applied to this thin film, the strip-shaped magnetic domains become cylindrical magnetic domains (bubble domains) at a certain magnetic field strength. This bubble domain has a diameter of several micrometers or less and can move freely within the magnetic thin film depending on the gradient of the magnetic field. Therefore, a magnetic bubble memory device utilizes this bubble domain as a memory element. At present, the block replica system as shown in FIG. 1 is becoming mainstream in the structure of memory chips used in magnetic bubble memory devices. To briefly explain this, a plurality of information storage loops 3 are connected to an information writing propagation path 2 connected to a bubble generator 1, and the opposite side of the plurality of information storage loops 3 is connected to a detector 4. Connected information readout propagation path 5
Furthermore, a transfer gate 6 is provided between the information writing path 2 and the information storage loop 3, and the information storage loop 3
A transfer out gate 7 is provided between the information reading propagation path 5 and the information reading propagation path 5. Note that the terminal end of the information writing propagation path 2 is connected to the eraser 8. In such a memory chip, if it is desired to read information, immediately after the information passes through the read-side gate, it cannot be read out from the storage loop until it has gone around the storage loop almost once. The present invention has been devised to improve this drawback.
このため本発明においては、1本の情報書き込
み用伝播路と1本の情報読み出し用伝播路とに繋
がつた複数個の情報蓄積ループを持つた磁気バブ
ルメモリチツプにおいて、該情報蓄積ループと情
報書き込み用伝播路との間にトランスフアイン機
能とリプリケートアウト機能を果すゲートを設け
ると共に、該情報蓄積ループと情報読み出し用伝
播路との間にトランスフアアウト機能とリプリケ
ートアウト機能を果すゲートを設け、さらに情報
書き込み用伝播路の終端と情報読み出し用伝播路
の終端とを合流させて、何れからでも読み出し可
能としたことを特徴とするものである。 Therefore, in the present invention, in a magnetic bubble memory chip having a plurality of information storage loops connected to one information writing propagation path and one information reading propagation path, the information storage loop and the information writing A gate that performs a transfer-in function and a replicate-out function is provided between the information storage loop and the information read-out propagation path, and a gate that performs a transfer-out function and a replicate-out function is provided between the information storage loop and the information readout propagation path. Furthermore, the terminal end of the information writing propagation path and the terminal end of the information reading propagation path are merged, so that reading can be performed from either of them.
以下、添付図面に基づいて本発明の実施例につ
き詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail based on the accompanying drawings.
第2図に実施例の構成図を示す。本実施例は、
バブル発生器1に繋がつた情報書き込み用伝播路
2には複数個の情報蓄積ループ3が接続され、こ
の複数個の情報蓄積ループ3の反対側は情報読み
出し用伝播路5に接続され、前記の情報書き込み
用伝播路2の終端と情報読み出し用伝播路5の終
端とは合流して検出器4に接続されている。また
情報書き込み用伝播路2と情報蓄積ループ3との
間にはトランスフアイン機能とリプリケートアウ
ト機能をもつゲート9が設けられ、情報読み出し
用伝播路5と情報蓄積ループ3との間にはトラン
スフアウト機能とリプリケートアウト機能をもつ
ゲート10が設けられている。 FIG. 2 shows a configuration diagram of the embodiment. In this example,
A plurality of information storage loops 3 are connected to the information writing propagation path 2 connected to the bubble generator 1, and the opposite side of the plurality of information storage loops 3 is connected to the information reading propagation path 5. The terminal end of the information writing propagation path 2 and the terminal end of the information reading propagation path 5 merge and are connected to the detector 4. Further, a gate 9 having a transfer-in function and a replicate-out function is provided between the information writing propagation path 2 and the information storage loop 3, and a transfer gate 9 is provided between the information reading propagation path 5 and the information storage loop 3. A gate 10 having an out function and a replicate out function is provided.
この各ゲートのパターンの1例を第3図に示
す。図において符号9はトランスフアインとリプ
リケートアウトの両機能をもつゲートであつて、
このゲートはバブルを駆動する回転磁界HDの180
゜位相が異なる部分Tr―inとRe―outを夫々用い
ることにより2機能を使い分けることができるよ
うになつている。 An example of the pattern of each gate is shown in FIG. In the figure, reference numeral 9 is a gate that has both transfer-in and replicate-out functions.
This gate has a rotating magnetic field H D that drives the bubble at 180
By using the portions Tr-in and Re-out, which have different phases, it is possible to use the two functions separately.
このように構成された本実施例の磁気バブルメ
モリチツプの動作を次に説明する。先ず第4図の
如く情報蓄積ループ3のバブル伝播方向が矢印の
如く反時計方向であり、読み出したい情報がP点
にあれば、P点より反時計回りにゲート9までの
ビツト数をN1,ゲート10までのビツト数をN2
とする。次に第5図のフローチヤート図に示す如
き手順でN1とN2を比較し、その小さい方のゲー
トより読み出すようにする。このようにすること
により読み出したい情報が読み出し側のゲート1
0を通過した直後でも情報蓄積ループ3をほぼ半
周すれば書き込み側のゲート9より読み出すこと
ができる。 The operation of the magnetic bubble memory chip of this embodiment constructed in this manner will be described below. First, as shown in Fig. 4, if the bubble propagation direction in the information storage loop 3 is counterclockwise as indicated by the arrow, and the information to be read is at point P, then the number of bits from point P to gate 9 counterclockwise is N1. , the number of bits up to gate 10 is N 2
shall be. Next, N 1 and N 2 are compared according to the procedure shown in the flowchart of FIG. 5, and the smaller gate is read out. By doing this, the information you want to read is at the gate 1 on the read side.
Immediately after passing through 0, the information can be read from the write side gate 9 by going around the information storage loop 3 approximately half way.
以上説明した如く本発明の磁気バブルメモリチ
ツプは書き込み側にトランスフアイン機能にリプ
リケートアウト機能を付加したゲートを置き、書
き込み側伝播路を読み出し側伝播路に合流させる
ことにより情報読み出し時間(平均アクセスタイ
ム)の短縮を可能としたものである。 As explained above, the magnetic bubble memory chip of the present invention has a gate with a transfer-in function and a replicate-out function on the write side, and the write side propagation path merges with the read side propagation path, thereby reducing the information read time (average access This made it possible to shorten the time required.
第1図は従来のブロツクリプリケート方式の1
例の構成図、第2図は本発明にかかる実施例の磁
気バブルメモリチツプの構成図、第3図は実施例
のゲートパターンの1例の模式図、第4図は実施
例の動作説明図、第5図はそのフローチヤート図
である。
1……バブル発生器、2……情報書き込み用伝
播路、3……情報蓄積ループ、4……検出器、5
……情報読み出し用伝播路、9,10……ゲー
ト。
Figure 1 shows one example of the conventional block replication method.
FIG. 2 is a configuration diagram of a magnetic bubble memory chip according to an embodiment of the present invention, FIG. 3 is a schematic diagram of an example of a gate pattern of an embodiment, and FIG. 4 is an explanatory diagram of the operation of an embodiment. , FIG. 5 is a flow chart thereof. 1...Bubble generator, 2...Propagation path for information writing, 3...Information storage loop, 4...Detector, 5
...Propagation path for information reading, 9, 10...gate.
Claims (1)
み出し用伝播路とに繋がつた複数個の情報蓄積ル
ープを持つた磁気バブルメモリチツプにおいて、
該情報蓄積ループと情報書き込み用伝播路との間
にトランスフアイン機能とリプリケートアウト機
能を果すゲートを設けると共に、該情報蓄積ルー
プと情報読み出し用伝播路との間にトランスフア
アウト機能とリプリケートアウト機能を果すゲー
トを設け、さらに情報書き込み用伝播路の終端と
情報読み出し用伝播路の終端とを合流させて、何
れからでも読み出し可能としたことを特徴とする
磁気バブルメモリチツプ。1. In a magnetic bubble memory chip having a plurality of information storage loops connected to one information writing propagation path and one information reading propagation path,
A gate that performs a transfer-in function and a replicate-out function is provided between the information storage loop and the information writing propagation path, and a gate that performs a transfer-out function and a replicate-out function is provided between the information storage loop and the information reading propagation path. A magnetic bubble memory chip characterized in that it is provided with a gate that performs an out function, and furthermore, the terminal end of an information writing propagation path and the terminal end of an information reading propagation path are merged, so that reading can be performed from either of them.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16918979A JPS5694568A (en) | 1979-12-27 | 1979-12-27 | Magnetic bubble memory chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16918979A JPS5694568A (en) | 1979-12-27 | 1979-12-27 | Magnetic bubble memory chip |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5694568A JPS5694568A (en) | 1981-07-31 |
JPS6137700B2 true JPS6137700B2 (en) | 1986-08-25 |
Family
ID=15881873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16918979A Granted JPS5694568A (en) | 1979-12-27 | 1979-12-27 | Magnetic bubble memory chip |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5694568A (en) |
-
1979
- 1979-12-27 JP JP16918979A patent/JPS5694568A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5694568A (en) | 1981-07-31 |
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