JPS6242438A - Film substrate for transmission - Google Patents
Film substrate for transmissionInfo
- Publication number
- JPS6242438A JPS6242438A JP60182345A JP18234585A JPS6242438A JP S6242438 A JPS6242438 A JP S6242438A JP 60182345 A JP60182345 A JP 60182345A JP 18234585 A JP18234585 A JP 18234585A JP S6242438 A JPS6242438 A JP S6242438A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- conductive paste
- strip conductor
- container
- grounding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高周波ICにおける伝送路として用いられる
膜基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a film substrate used as a transmission line in a high frequency IC.
マイクロ波伝送回路の1つであるストリップ線路は、平
行平板形導波管の変形であって、誘電体の両面に接地面
になる接地導体とストリップ導体とが設けられたもので
ある。このストリップ線路は平面構造になっており、小
形軽量にすることができ、経済的な伝送路として製造す
ることができる。また半導体部品と組合わせ使用する場
合に優れた適合性をもっている。したがって半導体装置
内の高周波伝送路として広く用いられている。A strip line, which is one type of microwave transmission circuit, is a modification of a parallel plate waveguide, and has a ground conductor serving as a ground plane and a strip conductor on both sides of a dielectric material. This stripline has a planar structure, can be made small and lightweight, and can be manufactured as an economical transmission line. It also has excellent compatibility when used in combination with semiconductor components. Therefore, it is widely used as a high frequency transmission line in semiconductor devices.
ところで、上記ストリップ線路を、M&仮として半導体
容器にダイボンディングして接着する方法としては、通
常の半導体素子の場合に用いられる半田系あるいは金糸
合金を用いた共晶ダイボンディング法によらず、導電ペ
ーストを用いた常温接着法を採用することが多くなった
。By the way, the method of die-bonding and adhering the above-mentioned strip line to the semiconductor container as an M&temporary method is not to use the eutectic die-bonding method using solder or gold thread alloy, which is used in the case of ordinary semiconductor devices, but to use a conductive method. Room-temperature bonding methods using paste are increasingly being used.
これは、高周波帯においては、他の搭載部品との位置合
わせに寸法精度が厳しく、共晶ダイボンディング法では
位置がずれ易く寸法精度がだ ゛しにくいからである
。4電ペースト法は、常温接着であるから寸法精度がだ
しやすく、また作業コストも軽減できる。This is because in high frequency bands, dimensional accuracy is difficult to align with other mounted components, and with the eutectic die bonding method, the position tends to shift and dimensional accuracy is difficult to maintain. Since the 4-electro paste method uses room-temperature bonding, dimensional accuracy can be easily achieved and work costs can be reduced.
しかし、導電ペーストで、膜基板を容器に接着する場合
に、問題点が多す。第3図で、膜基板8は1がス) +
7ツプ導体、3が誘電質の板状体、2が接地導体で、ス
トリップ線路を形成している。容器7に接地導体2との
間を24電ペースト5で接着するが、接地導体2の界面
に対する4電ペースト5のヌレ性が悪いことと、ペース
トキュア時のアウトガス発生があるので、ヌレ性不良に
より接着力がおとり、またアウトガスで空洞6が生じや
すい。空洞6の位置によっては接着力にも影響する。However, there are many problems when bonding a membrane substrate to a container using conductive paste. In Figure 3, the membrane substrate 8 is 1)
Seven conductors, 3 a dielectric plate, and 2 a ground conductor form a strip line. The container 7 and the ground conductor 2 are bonded with the 24-electrode paste 5, but the wetting properties of the 4-electrode paste 5 on the interface of the ground conductor 2 are poor, and outgas is generated during paste curing, resulting in poor wetting properties. This weakens the adhesive strength, and also tends to create cavities 6 due to outgas. The position of the cavity 6 also affects the adhesion force.
したがって、上記欠点を除くためには、ヌレ性+7)良
く、空洞のできにくい低アウトガスペーストを選択すれ
ばよいが、電気的特性が最重点で良電導性が必要であっ
て、都合の良い4電ペーストがない。Therefore, in order to eliminate the above drawbacks, it is sufficient to select a low outgassing paste that has good wettability (+7) and does not easily form cavities. There is no electric paste.
本発明の目的は、上記事情に鑑み、従来の導電ペースト
、従来の工法によっても膜基板と容器との充分な接着強
度の得られる構造を有する膜基板を提供することにある
、
〔問題点を解決するための手段〕
本発明の膜基板は、誘¥ii、質の板状体の一面にスト
リップ導体が設けられ、他面に該ストリップ導体に中心
線を合わして平行し、それより幅広の接地導体が板状体
の側端との間に間隔全おいて設けられたものである。こ
の膜基板を半導体装置の容器に導電ペーストにより接着
することで高周波伝送路を形成することができる。In view of the above circumstances, an object of the present invention is to provide a membrane substrate having a structure in which sufficient adhesion strength between the membrane substrate and the container can be obtained even with conventional conductive pastes and conventional construction methods. Means for Solving the Problem] The membrane substrate of the present invention is provided with a strip conductor on one side of a dielectric plate, and a strip conductor on the other side that is parallel to the strip conductor and whose center line is aligned with the strip conductor. A ground conductor is provided at a full distance from the side edge of the plate-like body. A high frequency transmission path can be formed by bonding this film substrate to a container of a semiconductor device using a conductive paste.
導電ペーストは、接地導体とは界面ヌレ性が良くないが
、誘電質の部材とは界面ヌレ性が数段と優れている。し
たがって本発明のように膜基板の接地導体面側のように
、側端より接地導体との間に誘1!質の部材が露出して
いる場合には、この部分での界面ヌレ性が極めて良好と
なるので、膜基板の容器との接着力を充分強くすること
ができる。Although the conductive paste does not have good interfacial wetting properties compared to a ground conductor, it has much better interfacial wetting properties than dielectric members. Therefore, as in the present invention, as in the case of the ground conductor surface side of the membrane substrate, there is a gap between the side edge and the ground conductor. When the material is exposed, the interfacial wettability at this portion is extremely good, so that the adhesion between the membrane substrate and the container can be made sufficiently strong.
以下、図面を参照して、本発明の一実施例につき説明す
る。第1図は実施例の膜基板を示すもので、第2図に容
器に4屯ペーストで接着した状況を示す。図にみるよう
に、誘電質の板状体3の一面(上面)にストリップ導体
1を設け、他面(下面)にこれと平行して中心ik合わ
して幅広の接地導体10t−設ける。その幅は、ストリ
ップ導体1の幅の数倍程度にとる。板状体3の側端との
間の側端部分4は露出していて、誘電質部材面になって
いる。Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows the membrane substrate of the example, and FIG. 2 shows the state where it is adhered to a container with 4-ton paste. As shown in the figure, a strip conductor 1 is provided on one surface (upper surface) of a dielectric plate-like body 3, and a wide ground conductor 10t is provided on the other surface (lower surface) in parallel with the strip conductor 1 with its centers ik aligned. Its width is about several times the width of the strip conductor 1. The side end portion 4 between the side ends of the plate-like body 3 is exposed and serves as a dielectric member surface.
上記膜基板9を容器7に導電ペースト5で接着すると、
第2図に示すように、導電ペースト5と、前記側端部分
4との間は、導電ペースト5のヌレが極めて良く、接着
力が強い。このとき、4tペースト5は従来のものでり
るから7ウトガスで空洞6ができることもめるが、側端
部分4はヌレがよいためこの部分には殆ど空洞6が生じ
ないので、接着強度に対する影響はない。When the membrane substrate 9 is bonded to the container 7 with the conductive paste 5,
As shown in FIG. 2, the conductive paste 5 has very good wetting between the conductive paste 5 and the side end portion 4, and the adhesive force is strong. At this time, since the 4t paste 5 is a conventional one, it is possible that a cavity 6 will be formed after 7 hours, but since the side edge part 4 has good wettability, almost no cavity 6 will be formed in this part, so there is no effect on the adhesive strength. do not have.
次に、接地導体10が板状体3のストリップ導体1に対
向する面の全面にないことによる高周波伝送特性に対す
る影響について述べる。一般にストリップ導体1の幅に
対する接地得体10の幅が数倍程度であれば、導体間の
電界は75〜85チが垂直上下方向に集中する。これは
ストリップ導体lと板状体3の厚みとの比、誘電率から
理論的にも計算されるもので、高周波伝送路として必要
な特性を考慮して目的に適合した設計値を選定すればよ
い。Next, the influence on high frequency transmission characteristics due to the fact that the ground conductor 10 is not present on the entire surface of the plate-shaped body 3 facing the strip conductor 1 will be described. Generally, if the width of the grounding member 10 is several times the width of the strip conductor 1, 75 to 85 inches of the electric field between the conductors will be concentrated in the vertical vertical direction. This can be calculated theoretically from the ratio of the thickness of the strip conductor l to the thickness of the plate-shaped body 3 and the dielectric constant, and if you select a design value that suits the purpose by considering the characteristics required as a high-frequency transmission line. good.
〔発明の効果J
以上、説明したように、膜基板の構造として、接地面を
全面を金属でおおわず、板状体の側端から間隔をおいて
接地導体を形成することによって、従来の導電ペースト
で容器に接着しても、充分な接着強度を得ることができ
た。4電ペーストによる作業は常温作業であるから、半
導体装置内の他の部品との関係位fを寸法精度よく設定
できる。[Effects of the Invention J As explained above, as for the structure of the membrane substrate, the ground plane is not entirely covered with metal, but the ground conductor is formed at a distance from the side edge of the plate-like body, thereby improving the conventional conductive structure. Sufficient adhesive strength could be obtained even when the paste was used to adhere to the container. Since the work using the 4-electrode paste is performed at room temperature, the relationship f with other parts in the semiconductor device can be set with high dimensional accuracy.
また、上記膜基板の構造でも設計により高周波伝送特性
を損なわないようにできる。Furthermore, the structure of the membrane substrate can be designed so as not to impair high frequency transmission characteristics.
第1図、第2図は本発明の一実施例を示すもので、第1
図は膜基板の斜視図、第2図は容器に接着した状況を示
す図、第3図は従来例の膜基板の接着状況を示す図であ
る。
1・・・ストリップ導体、
2.10・・・接地導体、
3・・・板状体(誘を賀)、
4・・・側端部分、 5・・・導電ペースト、6
・・・空洞、 7・・・容器、8.9・・・
膜基板。1 and 2 show one embodiment of the present invention.
2 is a perspective view of the membrane substrate, FIG. 2 is a diagram showing the state in which the membrane substrate is adhered to a container, and FIG. 3 is a diagram showing the state in which the conventional membrane substrate is adhered. DESCRIPTION OF SYMBOLS 1... Strip conductor, 2.10... Grounding conductor, 3... Plate-shaped body (induction), 4... Side end portion, 5... Conductive paste, 6
...Cavity, 7...Container, 8.9...
membrane substrate.
Claims (1)
面に該ストリップ導体に中心線を合わせて平行し、それ
より幅広の接地導体が板状体の側端との間に間隔をおい
て設けられてなる膜基板であつて、半導体装置の容器に
導電ペーストにより接着され高周波伝送路を形成するこ
とを特徴とする半導体装置内伝送用膜基板。A strip conductor is provided on one side of a dielectric plate, and a ground conductor, which is wider than the strip conductor and parallel to the strip conductor with its center line aligned with the other side, is provided on the other side with a space between it and the side edge of the plate. 1. A membrane substrate for transmission in a semiconductor device, which is bonded to a container of a semiconductor device with a conductive paste to form a high frequency transmission path.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60182345A JPS6242438A (en) | 1985-08-19 | 1985-08-19 | Film substrate for transmission |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60182345A JPS6242438A (en) | 1985-08-19 | 1985-08-19 | Film substrate for transmission |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6242438A true JPS6242438A (en) | 1987-02-24 |
Family
ID=16116683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60182345A Pending JPS6242438A (en) | 1985-08-19 | 1985-08-19 | Film substrate for transmission |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6242438A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017092479A (en) * | 2013-01-25 | 2017-05-25 | 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd. | Package and method for forming transmission line |
-
1985
- 1985-08-19 JP JP60182345A patent/JPS6242438A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017092479A (en) * | 2013-01-25 | 2017-05-25 | 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd. | Package and method for forming transmission line |
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