JPS6242428A - 結晶成長装置 - Google Patents

結晶成長装置

Info

Publication number
JPS6242428A
JPS6242428A JP18121185A JP18121185A JPS6242428A JP S6242428 A JPS6242428 A JP S6242428A JP 18121185 A JP18121185 A JP 18121185A JP 18121185 A JP18121185 A JP 18121185A JP S6242428 A JPS6242428 A JP S6242428A
Authority
JP
Japan
Prior art keywords
substrate
quartz
jig
melt
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18121185A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260065B2 (enrdf_load_stackoverflow
Inventor
Michiharu Ito
伊藤 道春
Koji Hirota
廣田 耕治
Mitsuo Yoshikawa
吉河 満男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18121185A priority Critical patent/JPS6242428A/ja
Publication of JPS6242428A publication Critical patent/JPS6242428A/ja
Publication of JPH0260065B2 publication Critical patent/JPH0260065B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP18121185A 1985-08-19 1985-08-19 結晶成長装置 Granted JPS6242428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18121185A JPS6242428A (ja) 1985-08-19 1985-08-19 結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18121185A JPS6242428A (ja) 1985-08-19 1985-08-19 結晶成長装置

Publications (2)

Publication Number Publication Date
JPS6242428A true JPS6242428A (ja) 1987-02-24
JPH0260065B2 JPH0260065B2 (enrdf_load_stackoverflow) 1990-12-14

Family

ID=16096769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18121185A Granted JPS6242428A (ja) 1985-08-19 1985-08-19 結晶成長装置

Country Status (1)

Country Link
JP (1) JPS6242428A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264377A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd ビデオプリンタ
JPH0296490A (ja) * 1988-10-03 1990-04-09 Hitachi Ltd ビデオプリンタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264377A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd ビデオプリンタ
JPH0296490A (ja) * 1988-10-03 1990-04-09 Hitachi Ltd ビデオプリンタ

Also Published As

Publication number Publication date
JPH0260065B2 (enrdf_load_stackoverflow) 1990-12-14

Similar Documents

Publication Publication Date Title
JPS6242428A (ja) 結晶成長装置
JPS6242427A (ja) 結晶成長装置
JPH05330979A (ja) 液相エピタキシャル成長装置
JPH05330984A (ja) 液相エピタキシャル成長装置
JP4870859B2 (ja) 液相エピタキシャル成長装置及び成長方法
JPH05330983A (ja) 液相エピタキシャル成長装置
JPS6021897A (ja) 液相エピタキシヤル結晶成長方法
JPH05330981A (ja) 液相エピタキシャル成長装置
JPH05330978A (ja) 液相エピタキシャル成長装置
JPH05330980A (ja) 液相エピタキシャル成長装置
JP2574122B2 (ja) 化合物半導体の結晶成長方法および結晶成長装置
SU1633032A1 (ru) Способ получени полупроводниковых гетероструктур
JPH05330982A (ja) 液相エピタキシャル成長装置
JPH05330977A (ja) 液相エピタキシャル成長装置
JPH06206794A (ja) 液相エピタキシャル成長装置
JPH06345589A (ja) 液相エピタキシャル成長装置
JPS61156744A (ja) 液相エピタキシアル成長装置
JPH08208365A (ja) 溶液結晶成長装置および方法
JPH04148532A (ja) 液相エピタキシャル結晶成長装置
JPH02218139A (ja) 液相エピタキシャル結晶成長装置
JPH0278233A (ja) 液相エピタキシャル成長方法およびその成長装置
JPH04187589A (ja) 液相エピタキシャル結晶成長用治具及び該治具を用いた多元半導体結晶の製造方法
JPH02312247A (ja) 液相エピタキシャル成長用基板ホルダ
JPH05186291A (ja) 液相エピタキシャル成長装置
JPS634626A (ja) 液相エピタキシヤル結晶成長用基板保持治具