JPS6240697B2 - - Google Patents

Info

Publication number
JPS6240697B2
JPS6240697B2 JP58203764A JP20376483A JPS6240697B2 JP S6240697 B2 JPS6240697 B2 JP S6240697B2 JP 58203764 A JP58203764 A JP 58203764A JP 20376483 A JP20376483 A JP 20376483A JP S6240697 B2 JPS6240697 B2 JP S6240697B2
Authority
JP
Japan
Prior art keywords
layer
contrast
photoresist layer
photobleachable
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58203764A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59104642A (ja
Inventor
Furederitsuku Gurifuingu Buruusu
Richaado Uesuto Hooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS59104642A publication Critical patent/JPS59104642A/ja
Publication of JPS6240697B2 publication Critical patent/JPS6240697B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58203764A 1982-11-01 1983-11-01 集積回路の製法 Granted JPS59104642A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43819482A 1982-11-01 1982-11-01
US438194 1982-11-01
US536923 1983-09-28

Publications (2)

Publication Number Publication Date
JPS59104642A JPS59104642A (ja) 1984-06-16
JPS6240697B2 true JPS6240697B2 (uk) 1987-08-29

Family

ID=23739639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203764A Granted JPS59104642A (ja) 1982-11-01 1983-11-01 集積回路の製法

Country Status (1)

Country Link
JP (1) JPS59104642A (uk)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188924A (en) * 1984-05-14 1993-02-23 Kabushiki Kaisha Toshiba Pattern forming method utilizing material with photoresist film underlayer and contrast enhancement overlayer containing photosensitive diazonium salt
US4663275A (en) * 1984-09-04 1987-05-05 General Electric Company Photolithographic method and combination including barrier layer
JPH07107602B2 (ja) * 1985-04-30 1995-11-15 株式会社東芝 パタ−ン形成材料
CA2011927C (en) * 1989-06-02 1996-12-24 Alan Lee Sidman Microlithographic method for producing thick, vertically-walled photoresist patterns
JP2663815B2 (ja) * 1992-11-02 1997-10-15 信越化学工業株式会社 レジストパターン形成方法
US5902716A (en) * 1995-09-05 1999-05-11 Nikon Corporation Exposure method and apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3416922A (en) * 1963-07-04 1968-12-17 Azoplate Corp Resinous printing plate compositions containing light-sensitive nitrones
GB1186772A (en) * 1966-07-01 1970-04-02 American Cyanamid Co Improved Technique of Photographic Dodging and Modified Photographic Film
JPS4988466A (uk) * 1972-11-30 1974-08-23
US3873313A (en) * 1973-05-21 1975-03-25 Ibm Process for forming a resist mask
US4005437A (en) * 1975-04-18 1977-01-25 Rca Corporation Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3416922A (en) * 1963-07-04 1968-12-17 Azoplate Corp Resinous printing plate compositions containing light-sensitive nitrones
GB1186772A (en) * 1966-07-01 1970-04-02 American Cyanamid Co Improved Technique of Photographic Dodging and Modified Photographic Film
JPS4988466A (uk) * 1972-11-30 1974-08-23
US3873313A (en) * 1973-05-21 1975-03-25 Ibm Process for forming a resist mask
US4005437A (en) * 1975-04-18 1977-01-25 Rca Corporation Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil

Also Published As

Publication number Publication date
JPS59104642A (ja) 1984-06-16

Similar Documents

Publication Publication Date Title
US4702996A (en) Method of enhancing the contrast of images and materials therefor
US5108874A (en) Composite useful in photolithography
US4677049A (en) Spin castable photobleachable layer forming compositions
EP0110165B1 (en) A method of enhancing the contrast of images and materials therefor
EP0002999B1 (fr) Procédé de formation d'une couche de masquage sur un substrat pour constituer un masque
JP4482332B2 (ja) ファーストミニマム底面反射防止膜組成物を使用して像を形成する方法
KR970004447B1 (ko) 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법
KR920005771B1 (ko) 광표백성 필름을 사용하는 사진평판 제조방법
US4990665A (en) Diarylnitrones
JPS59142538A (ja) 感光性組成物
EP0459655A2 (en) Photoresist process employing an i-line peak light source
US4859789A (en) Diarylnitrones
KR940001554B1 (ko) 사진평판의 스트리핑 방법
JPS6240697B2 (uk)
JP2006338002A (ja) レジストの画像形成方法、上塗り層材料(液浸リソグラフィ汚染ゲッタリング層)
JPH0241741B2 (uk)
JPS60238829A (ja) パタ−ン形成方法
KR100764374B1 (ko) 이머젼 리소그라피 용액 제거용 조성물 및 이를 이용한이머젼 리소그라피 공정을 포함하는 반도체 소자 제조방법
JPH0688962B2 (ja) ジアリ−ルニトロン類
CA1299188C (en) Diarylnitrones
JPS62500202A (ja) 非漂白性の光吸収剤を含むポジのフォトレジストを用いる改良されたフォトリソングラフィ方法
JPH02187765A (ja) コントラスト増強用の光脱色性層用材料およびそれを用いたパターン形成方法
JPS61143744A (ja) パタ−ン形成方法
JPS61118741A (ja) フオトレジスト材料
Toriumi et al. Negative Bleaching Photoresist (BLEST) For Mid-UV Exposure

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees