JPS6240697B2 - - Google Patents
Info
- Publication number
- JPS6240697B2 JPS6240697B2 JP58203764A JP20376483A JPS6240697B2 JP S6240697 B2 JPS6240697 B2 JP S6240697B2 JP 58203764 A JP58203764 A JP 58203764A JP 20376483 A JP20376483 A JP 20376483A JP S6240697 B2 JPS6240697 B2 JP S6240697B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- contrast
- photoresist layer
- photobleachable
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43819482A | 1982-11-01 | 1982-11-01 | |
US438194 | 1982-11-01 | ||
US536923 | 1983-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59104642A JPS59104642A (ja) | 1984-06-16 |
JPS6240697B2 true JPS6240697B2 (en, 2012) | 1987-08-29 |
Family
ID=23739639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58203764A Granted JPS59104642A (ja) | 1982-11-01 | 1983-11-01 | 集積回路の製法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59104642A (en, 2012) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI875260B (zh) * | 2023-10-23 | 2025-03-01 | 奇美實業股份有限公司 | 水溶性組合物、其用途及半導體裝置的製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5188924A (en) * | 1984-05-14 | 1993-02-23 | Kabushiki Kaisha Toshiba | Pattern forming method utilizing material with photoresist film underlayer and contrast enhancement overlayer containing photosensitive diazonium salt |
US4663275A (en) * | 1984-09-04 | 1987-05-05 | General Electric Company | Photolithographic method and combination including barrier layer |
JPH07107602B2 (ja) * | 1985-04-30 | 1995-11-15 | 株式会社東芝 | パタ−ン形成材料 |
CA2011927C (en) * | 1989-06-02 | 1996-12-24 | Alan Lee Sidman | Microlithographic method for producing thick, vertically-walled photoresist patterns |
JP2663815B2 (ja) * | 1992-11-02 | 1997-10-15 | 信越化学工業株式会社 | レジストパターン形成方法 |
US5902716A (en) * | 1995-09-05 | 1999-05-11 | Nikon Corporation | Exposure method and apparatus |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL140629B (nl) * | 1963-07-04 | 1973-12-17 | Kalle Ag | Lichtgevoelig materiaal voor de vervaardiging van drukvormen en de daarmede vervaardigde drukvormen. |
US3511653A (en) * | 1966-07-01 | 1970-05-12 | American Cyanamid Co | Contrast enhancement of optical images |
NL7216227A (en, 2012) * | 1972-11-30 | 1974-06-04 | ||
US3873313A (en) * | 1973-05-21 | 1975-03-25 | Ibm | Process for forming a resist mask |
US4005437A (en) * | 1975-04-18 | 1977-01-25 | Rca Corporation | Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil |
-
1983
- 1983-11-01 JP JP58203764A patent/JPS59104642A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI875260B (zh) * | 2023-10-23 | 2025-03-01 | 奇美實業股份有限公司 | 水溶性組合物、其用途及半導體裝置的製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS59104642A (ja) | 1984-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |