JPS6239891B2 - - Google Patents
Info
- Publication number
- JPS6239891B2 JPS6239891B2 JP55113597A JP11359780A JPS6239891B2 JP S6239891 B2 JPS6239891 B2 JP S6239891B2 JP 55113597 A JP55113597 A JP 55113597A JP 11359780 A JP11359780 A JP 11359780A JP S6239891 B2 JPS6239891 B2 JP S6239891B2
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- oxide film
- detector
- film semiconductor
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims description 19
- 150000004706 metal oxides Chemical class 0.000 claims description 19
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 9
- 239000011734 sodium Substances 0.000 description 9
- 229910052708 sodium Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 229910001415 sodium ion Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000779 smoke Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000799 K alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910000528 Na alloy Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012857 radioactive material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Examining Or Testing Airtightness (AREA)
- Monitoring And Testing Of Nuclear Reactors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11359780A JPS5635037A (en) | 1980-08-19 | 1980-08-19 | Leakage detector for liquid metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11359780A JPS5635037A (en) | 1980-08-19 | 1980-08-19 | Leakage detector for liquid metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5635037A JPS5635037A (en) | 1981-04-07 |
| JPS6239891B2 true JPS6239891B2 (enrdf_load_stackoverflow) | 1987-08-25 |
Family
ID=14616233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11359780A Granted JPS5635037A (en) | 1980-08-19 | 1980-08-19 | Leakage detector for liquid metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5635037A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197456A (en) * | 1981-05-29 | 1982-12-03 | Toshiba Corp | Metallic ion detector |
| JPS5882663U (ja) * | 1981-11-30 | 1983-06-04 | 株式会社東芝 | アルカリ金属の漏洩検出器 |
-
1980
- 1980-08-19 JP JP11359780A patent/JPS5635037A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5635037A (en) | 1981-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2941192A (en) | Flame and overheat detecting system | |
| CA1258922A (en) | Solid state dosimeter | |
| JPS6239891B2 (enrdf_load_stackoverflow) | ||
| US4587543A (en) | Method and device for detecting metal ions | |
| US3569704A (en) | Radiation dosimeter | |
| EP0132924A3 (en) | Barrier layer for photovoltaic devices | |
| US4996576A (en) | Radiation-sensitive device | |
| US3265899A (en) | Semiconductor amplifying radiation detector | |
| KR100353047B1 (ko) | Ｐｏｗｅｒ ｐＭＯＳＦＥＴ을 사용한 고준위 방사선용γ선 실시간 소형 선량계 | |
| US3676678A (en) | Single chamber ionization smoke detector | |
| US4941029A (en) | High resistance optical shield for visible sensors | |
| Scharf et al. | Steady-State response of silicon radiation detectors of the diffused pn junction type to x rays. I: Photovoltaic mode of operation | |
| JPS6035834B2 (ja) | 輻射線検出用半導体装置 | |
| JP3000688B2 (ja) | 電子回路の耐放射線保護装置及び人工衛星 | |
| RU2061282C1 (ru) | Полупроводниковый детектор ионизирующего излучения | |
| JPS5756746A (en) | Humidity sensitive semiconductor element | |
| US3792279A (en) | Ionization smoke detector | |
| Žontar et al. | Radiation monitoring at Belle | |
| JPS5480090A (en) | Semiconductor device | |
| Hardy et al. | Low-frequency noise in proton damaged LDD MOSFET's | |
| JPH0793433B2 (ja) | 電界効果トランジスタ | |
| US3329815A (en) | Device for measuring beam quality of ionizing radiation comprising first and second detectors of different radiation lengths | |
| KR100423536B1 (ko) | 가돌리늄막을 가진 ｐＭＯＳＦＥＴ센서와 ｐＭＯＳＦＥＴ센서 및 감산기를 사용하여 감마선／열중성자를 동시에 검출하는 실시간 전자적 선량계 및 그 검출방법 | |
| JPS59114875A (ja) | 半導体放射線検出器 | |
| Moncaster et al. | A semiconductor monitor for nuclear radiations |