JPS6237557B2 - - Google Patents
Info
- Publication number
- JPS6237557B2 JPS6237557B2 JP11684077A JP11684077A JPS6237557B2 JP S6237557 B2 JPS6237557 B2 JP S6237557B2 JP 11684077 A JP11684077 A JP 11684077A JP 11684077 A JP11684077 A JP 11684077A JP S6237557 B2 JPS6237557 B2 JP S6237557B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- region
- semiconductor layer
- band width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 13
- 230000010355 oscillation Effects 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11684077A JPS5451491A (en) | 1977-09-30 | 1977-09-30 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11684077A JPS5451491A (en) | 1977-09-30 | 1977-09-30 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5451491A JPS5451491A (en) | 1979-04-23 |
JPS6237557B2 true JPS6237557B2 (xx) | 1987-08-13 |
Family
ID=14696919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11684077A Granted JPS5451491A (en) | 1977-09-30 | 1977-09-30 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5451491A (xx) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5618484A (en) * | 1979-07-24 | 1981-02-21 | Nec Corp | Manufacture of semiconductor laser |
JPS5627989A (en) * | 1979-08-14 | 1981-03-18 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
JPS5698888A (en) * | 1980-01-09 | 1981-08-08 | Tokyo Inst Of Technol | Light emitting semiconductor laser |
-
1977
- 1977-09-30 JP JP11684077A patent/JPS5451491A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5451491A (en) | 1979-04-23 |
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