JPS6234949A - Epoxy resin composition for sealing semiconductor - Google Patents
Epoxy resin composition for sealing semiconductorInfo
- Publication number
- JPS6234949A JPS6234949A JP60173212A JP17321285A JPS6234949A JP S6234949 A JPS6234949 A JP S6234949A JP 60173212 A JP60173212 A JP 60173212A JP 17321285 A JP17321285 A JP 17321285A JP S6234949 A JPS6234949 A JP S6234949A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- sealing semiconductor
- softening point
- thermoplastic resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、信頼性特に半田浸漬後の信頼性に優れる半導
体封止用エダキシ樹脂組成物に係わシ、その特徴は半田
浸漬時に軟化し熱衝撃を吸収する熱可塑性樹脂を配合す
ることにある。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an edoxy resin composition for semiconductor encapsulation that has excellent reliability, especially after being immersed in solder, and its characteristic is that it does not soften when immersed in solder. The goal is to incorporate thermoplastic resin that absorbs thermal shock.
従来の半導体の一般的な評価方法は、高温高湿条件にお
ける耐湿性テスト及び冷熱衝撃サイクルテストである。Conventional general evaluation methods for semiconductors are a moisture resistance test under high temperature and high humidity conditions and a thermal shock cycle test.
これらは一般使用条件の加速テストとして利用されてお
り、主として２気圧１００％ＲＨ条件での耐湿性評価や
一６５℃と１５０℃の間での熱衝撃評価が実施されてい
る。半導体封止用エイキシ樹脂組成物も上記評価に対し
て寿命を向上させるように改良されてきた。These are used as accelerated tests under general usage conditions, and moisture resistance evaluations are mainly carried out under 2 atmospheres and 100% RH conditions, and thermal shock evaluations between -65°C and 150°C. Eixy resin compositions for semiconductor encapsulation have also been improved to improve their lifespan in response to the above evaluation.
しかし、最近半導体の実装方法として半田浴に半導体及
び基板を浸漬させるという合理化方法が一部で実施され
今後かなり汎用化が予想される状況となってきた。However, recently, a streamlined method of immersing the semiconductor and substrate in a solder bath has been implemented in some areas as a semiconductor mounting method, and it is expected that this method will be widely used in the future.
現在、従来の半導体封止用エイキシ樹脂組成物で対応し
ているが半田浸漬後の信頼性が大幅に低下するという問
題を抱えている。例えば、耐湿性が極端に劣化したり特
性変動を起こしたシすることが報告されている。従来材
の品質設計時に想定した条件とは全く異る急激な熱衝撃
が加わるため一室温から２６０’Ｃまで数秒で熱変化す
るため対応しきれない状態になっている。At present, conventional Eixy resin compositions for semiconductor encapsulation are used to solve this problem, but they suffer from the problem that reliability after immersion in solder is significantly reduced. For example, it has been reported that the moisture resistance deteriorates extremely or the characteristics change. Due to the sudden thermal shock that is completely different from the conditions assumed when designing the quality of conventional materials, the temperature changes from one room temperature to 260'C in a few seconds, making it impossible to handle.
そこで、半田浸漬実装法に対応する半導体封止用工２キ
シ樹脂組成物の開発が市場から強く要求されている。Therefore, there is a strong demand from the market for the development of a dioxy resin composition for semiconductor encapsulation that is compatible with the solder immersion mounting method.
本発明は、従来材料では不可能であった半田浸漬時の熱
衝撃に耐える材料の開発を目的として研究した結果、あ
る温度範囲で軟化することによシ急激な熱衝撃を吸収で
きるだけでな〈従来の特性も保持できる物質・機構を見
い出し、市場で適用できる材料を完成したものである。The present invention was developed as a result of research aimed at developing a material that can withstand thermal shock during solder immersion, which was impossible with conventional materials. We have discovered a substance and mechanism that retains conventional properties, and have completed a material that can be applied on the market.
本発明は、軟化点が１５０〜２６０℃の熱可塑性樹脂を
１〜ｌＯ重ｔ％含むことを特徴とする半導体封止用工は
キシ樹脂組成物である。The present invention is a resin composition for semiconductor encapsulation characterized by containing 1 to 10% by weight of a thermoplastic resin having a softening point of 150 to 260°C.
本発明でいうところのエポキシ樹脂組成物は、工はキシ
樹脂・硬化促進剤及び本発明の熱可塑性樹脂を必須とし
、必要に応じて硬化剤・充填材・難燃剤・処理剤・顔料
・離型剤その他添加剤を配合したものである。半導体の
封止を目的としているので不純物は少ない方が好ましく
例えば試料５ｔを純水９５ｆで１２５℃・２０時間抽出
した時の抽出水室導度が８０μ８／ｃｔｎ以下が望まし
い。The epoxy resin composition referred to in the present invention essentially contains an oxyresin, a curing accelerator, and the thermoplastic resin of the present invention, and optionally includes a curing agent, a filler, a flame retardant, a processing agent, a pigment, and a release agent. It contains a molding agent and other additives. Since the purpose is to seal a semiconductor, it is preferable that the amount of impurities is small. For example, when 5 tons of sample is extracted with 95 f of pure water for 20 hours at 125° C., the conductivity of the extracted water chamber is preferably 80 μ8/ctn or less.
エポキシ樹脂とは、エイキシ基を有するもの全般のこと
をいい、例えばビスフェノール型エイキシ・フェノール
ノボラック型工はキシ樹脂・複素環型エポキシ樹脂とい
った一般名を挙げることができる。Epoxy resin refers to all compounds having an epoxy group, and for example, common names such as bisphenol type epoxy resin, phenol novolac type resin, oxyresin, and heterocyclic epoxy resin can be mentioned.
硬化促進剤とは、工メキシ樹脂組成物の硬化を１促進さ
せる触媒全般のことをいい、例えばイミダゾール類・第
３級アミン類・有機リン化合物・有機アルミニウム化合
物といった一般名を挙げることができる。The curing accelerator refers to any catalyst that accelerates the curing of the engineered resin composition, and includes common names such as imidazoles, tertiary amines, organophosphorus compounds, and organoaluminum compounds.
本発明の熱可塑性樹脂としては、軟化点が１５０〜２６
０℃であることが必要であシ、例えば高密度ポリエチレ
ン・月？リメチルＲンテン・ぼりエチレンテレフタレー
ト・ポリブチレンテレフタレート・ボリアリレート・プ
リカーボネート・ぼりフェニレンオキサイド・−リフェ
ニレ／サルファイド、ポリアミド・ポリスルホン・ポリ
エーテルエーテルケトン・プリイミド・イリアξトイミ
ド・ボリアンノビスマレイミド・フッ素樹脂といった一
般名を挙げることができる。The thermoplastic resin of the present invention has a softening point of 150 to 26
It needs to be at 0℃, for example, high-density polyethylene. Rimethyl R-nten, ethylene terephthalate, polybutylene terephthalate, polyarylate, precarbonate, phenylene oxide, -riphenylene/sulfide, polyamide, polysulfone, polyether ether ketone, priimide, ilia ξ toimide, boryanobismaleimide, fluororesin, etc. Can list common names.
軟化点が１５０℃未満だと、加工時や耐湿性評価時に溶
出し離型不良・外観不良や回路不良といった問題を起こ
す、逆に２６０℃を超えると熱衝撃の吸収効果がなくな
る。特に望ましい軟化点の範囲は１７０〜２３０℃であ
る。If the softening point is less than 150°C, it will elute during processing or when evaluating moisture resistance, causing problems such as poor mold release, poor appearance, and circuit defects.On the other hand, if it exceeds 260°C, the thermal shock absorption effect will be lost. A particularly desirable softening point range is 170 to 230°C.
又、添加量としては１〜１０重量％であることが必要で
ある。１チ未満では熱衝撃吸収効果が発揮されない。逆
に１０チ超えると熱可塑性樹脂としての性質が強くなシ
すぎ、半田浸漬時に溶融し外観不良を起こしたυ耐湿性
が極端に劣化する。Further, the amount added needs to be 1 to 10% by weight. If it is less than 1 inch, the thermal shock absorption effect will not be exhibited. On the other hand, if it exceeds 10 mm, its properties as a thermoplastic resin will be too strong, and its moisture resistance will be extremely deteriorated by melting when immersed in solder, resulting in poor appearance.
本発明に従うと半田浸漬といった厳しい実装条件でも従
来同等以上の信頼性を保持する工ぽキシ樹脂封止半導体
が得られる。即ち、大量生産・低コストを目的とした合
理化実装法−半田浸漬−が可能となりさらに半導体を汎
用のものとすることが達成できた。現在でも半導体は日
常生活の中で一般的に使用されているが、本発明によシ
今後さらに半導体は汎用化し人間の生活水準向上に役立
つことが期待できる。According to the present invention, it is possible to obtain an epoxy resin-encapsulated semiconductor that maintains reliability equal to or higher than conventional semiconductors even under severe mounting conditions such as solder immersion. That is, it has become possible to use a rational mounting method - solder dipping - aimed at mass production and low cost, and it has also been possible to make the semiconductor more versatile. Semiconductors are still commonly used in daily life, but it is expected that the present invention will make semiconductors even more versatile in the future and help improve the standard of living of humans.
以下、半導体封止用成形材料での検討例で説明する。検
討例で用いた部は全て重量部である。又、使用した原料
は次の通シである。The following is an explanation using a study example of a molding material for semiconductor encapsulation. All parts used in the study examples are parts by weight. The raw materials used are as follows.
工？キシ樹脂 大日本インキ化学工業 エビクロン−Ｎ
６６５ＥＸＰ充填材 龍 森 ヒユー
ズレックス硬 化 剤 住友ベークライト フェ
ノールノボラック硬化促進剤 住友化学工業
スミキュアー０表面処理剤 トーレ・シリコーン
ＳＨ−６０４０′顔 料 電気化学工業
カーボン離型 剤 へキストジャパン へ
キストワックスＥ熱可塑性樹脂 ■テリエチレン
軟化点 ８０℃■ゼリカーボネート
＃ １６０℃■ゼリフエニレンサルファイド ｌ
２２０℃■ぽリイミド ＃ ２５０
℃■フッ素樹脂 １３００℃従来の低
応力
添加剤 ■信越化学工業 ＫＦ−１
００■宇部興産 ＣＴＢＮ １３００
Ｘ ８検討例
エイキシ樹脂２０部、硬化剤１０部、充填材（７０−ｘ
−ｙ）部、硬化促進剤０２部、表面処理剤０．５部、顔
料０．５部、離型剤０．５部、熱可塑性樹脂Ｘ部、従来
の低応力添加剤ｙ部を表−１の配合に従って混合後１０
０℃の熱ロールで３分間混練し半導体封止用成形材料１
０種を得た。これら材料の特性及び模擬ＩＣの特性に関
する評価結果を表−１に示す。表−１よシ明らかなよう
に、本発明の熱可塑性樹脂を適量用いることによシ、半
田浸漬を受けても信頼性の劣化しない材料が得られる。Engineering? Oxy resin Dainippon Ink & Chemicals Ebikuron-N
665EXP filler Tatsumori Hughes Rex hardening agent Sumitomo Bakelite Phenol novolak hardening accelerator Sumitomo Chemical
Sumicure 0 surface treatment agent Toray Silicone
SH-6040' pigment Denki Kagaku Kogyo
Carbon mold release agent Hoechst Japan Hoechst Wax E thermoplastic resin ■Teriethylene
Softening point 80℃■Jericarbonate
# 160℃■Zelifenenylene sulfide l
220℃ ■Polyimide #250
℃■Fluororesin 1300℃ Conventional low stress additive ■Shin-Etsu Chemical KF-1
00■Ube Industries CTBN 1300
X 8 Study Example 20 parts of Eixy resin, 10 parts of curing agent, filler (70-x
-y) part, curing accelerator 02 parts, surface treatment agent 0.5 part, pigment 0.5 part, mold release agent 0.5 part, thermoplastic resin X part, conventional low stress additive y part - 10 after mixing according to the recipe in 1.
Knead for 3 minutes with a heated roll at 0°C to obtain molding material 1 for semiconductor encapsulation.
0 types were obtained. Table 1 shows the evaluation results regarding the characteristics of these materials and the characteristics of the simulated IC. As is clear from Table 1, by using an appropriate amount of the thermoplastic resin of the present invention, a material whose reliability does not deteriorate even when immersed in solder can be obtained.
従来技術又は本発明の範囲よシ外れる場合の検討例と比
較すると抜群の効果があることがわかる。It can be seen that the present invention has an outstanding effect when compared with the conventional technology or the study examples outside the scope of the present invention.
Claims (1)
量％含むことを特徴とする半導体封止用エポキシ樹脂組
成物。An epoxy resin composition for semiconductor encapsulation, comprising 1 to 10% by weight of a thermoplastic resin having a softening point of 150 to 260°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60173212A JPS6234949A (en) | 1985-08-08 | 1985-08-08 | Epoxy resin composition for sealing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60173212A JPS6234949A (en) | 1985-08-08 | 1985-08-08 | Epoxy resin composition for sealing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6234949A true JPS6234949A (en) | 1987-02-14 |
Family
ID=15956198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60173212A Pending JPS6234949A (en) | 1985-08-08 | 1985-08-08 | Epoxy resin composition for sealing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6234949A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62135516A (en) * | 1985-12-09 | 1987-06-18 | Polyplastics Co | Sealant for electrical component |
| JPH01286346A (en) * | 1988-05-12 | 1989-11-17 | Nitto Denko Corp | Semiconductor device |
| JPH0222322A (en) * | 1988-07-12 | 1990-01-25 | Toshiba Chem Corp | Resin compound for sealing |
| JPH037724A (en) * | 1989-03-30 | 1991-01-14 | Toray Ind Inc | Epoxy resin composition |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5650545A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Resin molded type semiconductor device |
| JPS5999748A (en) * | 1982-11-30 | 1984-06-08 | Toshiba Corp | Resin sealed type semiconductor device |
| JPS59181037A (en) * | 1983-03-30 | 1984-10-15 | Nitto Electric Ind Co Ltd | Semiconductor device |
| JPS60181120A (en) * | 1984-02-03 | 1985-09-14 | チバ‐ガイギー アクチエンゲゼルシヤフト | Epoxy resin/polysulfone forming composition giving high crack- and moisture-resistance curable product |
| JPS6121125A (en) * | 1984-07-10 | 1986-01-29 | Matsushita Electric Works Ltd | Epoxy resin molding material for sealing |
| JPS6222823A (en) * | 1985-07-23 | 1987-01-31 | Toshiba Chem Corp | Sealing resin composition |
| JPS6222822A (en) * | 1985-07-23 | 1987-01-31 | Toshiba Chem Corp | Sealing resin composition |
-
1985
- 1985-08-08 JP JP60173212A patent/JPS6234949A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5650545A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Resin molded type semiconductor device |
| JPS5999748A (en) * | 1982-11-30 | 1984-06-08 | Toshiba Corp | Resin sealed type semiconductor device |
| JPS59181037A (en) * | 1983-03-30 | 1984-10-15 | Nitto Electric Ind Co Ltd | Semiconductor device |
| JPS60181120A (en) * | 1984-02-03 | 1985-09-14 | チバ‐ガイギー アクチエンゲゼルシヤフト | Epoxy resin/polysulfone forming composition giving high crack- and moisture-resistance curable product |
| JPS6121125A (en) * | 1984-07-10 | 1986-01-29 | Matsushita Electric Works Ltd | Epoxy resin molding material for sealing |
| JPS6222823A (en) * | 1985-07-23 | 1987-01-31 | Toshiba Chem Corp | Sealing resin composition |
| JPS6222822A (en) * | 1985-07-23 | 1987-01-31 | Toshiba Chem Corp | Sealing resin composition |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62135516A (en) * | 1985-12-09 | 1987-06-18 | Polyplastics Co | Sealant for electrical component |
| JPH0582859B2 (en) * | 1985-12-09 | 1993-11-22 | Polyplastics Kk | |
| JPH01286346A (en) * | 1988-05-12 | 1989-11-17 | Nitto Denko Corp | Semiconductor device |
| JPH0222322A (en) * | 1988-07-12 | 1990-01-25 | Toshiba Chem Corp | Resin compound for sealing |
| JPH037724A (en) * | 1989-03-30 | 1991-01-14 | Toray Ind Inc | Epoxy resin composition |
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