JPS6233738B2 - - Google Patents
Info
- Publication number
- JPS6233738B2 JPS6233738B2 JP19454383A JP19454383A JPS6233738B2 JP S6233738 B2 JPS6233738 B2 JP S6233738B2 JP 19454383 A JP19454383 A JP 19454383A JP 19454383 A JP19454383 A JP 19454383A JP S6233738 B2 JPS6233738 B2 JP S6233738B2
- Authority
- JP
- Japan
- Prior art keywords
- coating material
- semiconductor wafer
- film
- coating
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 claims description 56
- 238000000576 coating method Methods 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 33
- 235000012431 wafers Nutrition 0.000 description 31
- 238000000034 method Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 2
- 238000007761 roller coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
Landscapes
- Coating Apparatus (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
この発明は、半導体ウエハにレジスト等の被覆
剤を塗布す半導体ウエハの被覆剤塗布装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor wafer coating coating apparatus for coating a semiconductor wafer with a coating such as a resist.
従来、半導体ウエハの片面、例えば上面にのみ
レジストを塗布する場合、スピンナ法や噴露塗布
法やローラ塗布法等で行われていた。 Conventionally, when applying a resist only to one side of a semiconductor wafer, for example, the top surface, a spinner method, a spray coating method, a roller coating method, or the like has been used.
このスピンナ法は、半導体ウエハの上面にレジ
ストを滴下してこのウエハを回転し、レジストを
上面全体に広げるようにしている。しかし、これ
では半導体ウエハが円形の場合にはレジストがほ
ぼ均一に塗布されるが、半導体ウエハ（例えば
―族化合物半導体ウエハ）が非対称形や不定形
の場合、レジストが片寄つて下面に回り込むとい
う問題があつた。 In this spinner method, resist is dropped onto the top surface of a semiconductor wafer and the wafer is rotated to spread the resist over the entire top surface. However, with this method, if the semiconductor wafer is circular, the resist is applied almost uniformly, but if the semiconductor wafer (for example, - group compound semiconductor wafer) is asymmetrical or irregularly shaped, the problem is that the resist is unevenly applied and wraps around the bottom surface. It was hot.
また、噴露塗布法やローラ塗布法では、半導体
ウエハを支持板上に設置してレジストを塗布した
後、形の異なる他の半導体ウエハをその支持板に
設置すると、支持板に残つているレジストが裏面
に付着することになる。 In addition, in the spray coating method and roller coating method, if a semiconductor wafer is placed on a support plate and resist is applied, and then another semiconductor wafer of a different shape is placed on the support plate, the resist remaining on the support plate may be removed. will be attached to the back side.
従つて、何れの方法によつても片面にのみレジ
ストを塗布するという目的を達成することができ
なかつた。 Therefore, no matter which method is used, it has not been possible to achieve the objective of applying resist only to one side.
この発明は、斯かる点に鑑みてなされたもの
で、被覆剤が含侵した塗布材に半導体ウエハを押
付けることにより、被覆剤を片面にのみ正確に塗
布できるようにした半導体ウエハの被覆剤塗布装
置を提供することを目的とするものである。 This invention has been made in view of the above, and is a coating material for semiconductor wafers that allows the coating material to be accurately applied to only one side by pressing the semiconductor wafer against the coating material impregnated with the coating material. The object of the present invention is to provide a coating device.
すなわち、この発明は上記目的を達成するため
に、固定治具における一対の固定部材間にフイル
ムがその両端部にて取付けられ、このフイルムの
中央部が下方に湾曲されると共に、この中央部に
開口が形成され、更に、フイルムの下面に吸湿性
の塗布材が貼付され、上面中央部に被覆剤が滴下
されて前記塗布材に開口を介して含侵される一
方、前記塗布材の下方に支持部材が設けられ、こ
の支持部材の上端に半導体ウエハが設けられて成
り、この半導体ウエハの上面に前記塗布材を押付
けて全面密着し、前記被覆剤をウエハ上面に塗布
するように構成されている。 That is, in order to achieve the above object, a film is attached at both ends of the film between a pair of fixing members in a fixing jig, the center part of the film is curved downward, and the center part is An opening is formed, and a hygroscopic coating material is applied to the lower surface of the film, and a coating material is dropped onto the center of the upper surface and impregnated into the coating material through the opening, while being supported below the coating material. A member is provided, and a semiconductor wafer is provided on the upper end of the support member, and the coating material is pressed onto the upper surface of the semiconductor wafer so as to be in close contact with the entire surface, and the coating material is applied to the upper surface of the wafer. .
以下、この発明の一実施例について図面に基づ
き詳細に説明する。 Hereinafter, one embodiment of the present invention will be described in detail based on the drawings.
第１図乃至第３図に示すように、１は半導体ウ
エハ２にレジスト３を塗布する被覆剤塗布装置で
あつて、固定治具４、フイルム５、塗布材６及び
支持部材７より構成されている。 As shown in FIGS. 1 to 3, reference numeral 1 denotes a coating coating device for coating a resist 3 on a semiconductor wafer 2, and is composed of a fixing jig 4, a film 5, a coating material 6, and a support member 7. There is.
固定部材４は、フイルム５を固定支持するもの
で、一対の固定部材４ａ，４ａが連接部材４ｂで
連接されて平面視コ字状に構成されている。この
固定治具４は、図示しないが、上下動自在に支持
されている。 The fixing member 4 fixedly supports the film 5, and has a U-shape in plan view, with a pair of fixing members 4a, 4a connected by a connecting member 4b. Although not shown, this fixing jig 4 is supported so as to be vertically movable.
フイルム５は、やや横長に形成されてその両端
部が固定部材４ａ，４ａの下面に固定されてい
る。このフイルム５は湾曲変形自在に形成され、
両固定部材４ａ，４ａ間隔より長く構成されて中
央部が下方に湾曲して撓んでいる。更に、フイル
ム５の中央部には円形の開口５ａが穿設されると
共に、両側部に切欠５ｂが形成されており、この
切欠５ｂの大きさによつて中央開口５ａの部分の
撓み量が調整されている。そして、このフイルム
５の上面中央部にレジスト３が滴下され、つま
り、最低部の開口５ａの周囲にレジスト３が滴下
されている。 The film 5 is formed to be slightly laterally elongated, and both ends thereof are fixed to the lower surfaces of the fixing members 4a, 4a. This film 5 is formed to be curved and deformable,
It is configured to be longer than the distance between both fixing members 4a, 4a, and its central portion is curved and bent downward. Further, a circular opening 5a is formed in the center of the film 5, and notches 5b are formed on both sides, and the amount of deflection of the central opening 5a can be adjusted depending on the size of the notches 5b. has been done. Then, the resist 3 is dropped onto the center portion of the upper surface of the film 5, that is, the resist 3 is dropped around the opening 5a at the lowest portion.
塗布材６は、ペーパータオル等でスポンジ状の
吸湿性のある布で構成され、半導体ウエハ２より
大きく形成され、フイルム５の下面に塗布されて
いる。この塗布材６はフイルム５の開口５ａがほ
ぼ中央部に位置し、レジスト３が開口５ａを通つ
て含侵するようになつている。 The coating material 6 is made of a sponge-like hygroscopic cloth such as a paper towel, is formed larger than the semiconductor wafer 2, and is coated on the lower surface of the film 5. In this coating material 6, the opening 5a of the film 5 is located approximately at the center, and the resist 3 is impregnated through the opening 5a.
支持部材７は、半導体ウエハ２を支持するもの
で、円柱状の支柱７ａの上端に円錐台状の設置部
７ｂが取付けられて成り、この設置部７ｂが塗布
材６における最低部のほぼ真下に位置している。
また設置部７ｂには、図示しないが、吸引口が開
設されており、半導体ウエハ２を吸着して支持す
るようになつている。 The support member 7 supports the semiconductor wafer 2, and includes a truncated conical installation portion 7b attached to the upper end of a cylindrical support 7a. positioned.
Further, although not shown, a suction port is provided in the installation portion 7b, and the semiconductor wafer 2 is suctioned and supported.
次に、この被覆剤塗布装置１による塗布方法に
ついて説明する。 Next, a coating method using this coating material coating device 1 will be explained.
まず、第１図に示すように、固定治具４を上昇
させた状態において、フイルム５の上面にレジス
ト３を滴下すると、このフイルム５が湾曲してい
るので、中央部の最低部に集中する。そして、こ
の最低部に開口５ａが形成されているので、レジ
スト３は開口５ａを通つて塗布材６に侵入する。 First, as shown in FIG. 1, when the resist 3 is dropped onto the top surface of the film 5 with the fixing jig 4 raised, since the film 5 is curved, it will be concentrated at the lowest part in the center. . Since the opening 5a is formed at this lowest portion, the resist 3 enters the coating material 6 through the opening 5a.
一方、半導体ウエハ２はレジスト塗布面を上に
して支持部材７に吸着支持されて、塗布材６の下
方に設置される。 On the other hand, the semiconductor wafer 2 is suction-supported by the support member 7 with the resist-coated surface facing upward, and is placed below the coating material 6 .
この状態より、固定治具４を下降すると、レジ
スト３を含侵した塗布材６の湾曲した最低部が、
第３図に示すように、半導体ウエハ２の上面中央
部に接する。引き続いて、固定治具４を徐々に下
降していくと、フイルム５が変形自在であるの
で、第４図に示すように、塗布材６と共にフイル
ム５が半導体ウエハ２に倣つて中央部より平坦に
変形し、この塗布材６の半導体ウエハ２に対する
接触部が徐々に広がり、半導体ウエハ２の上面に
塗布材６が全面接触する。この時点で固定治具４
の下降を停止し、その後、この固定治具４を上昇
させると、レジスト３が半導体ウエハ２の上面に
のみ塗布されることになる。そして、このレジス
ト３の膜厚は、従来より厚い５μｍ程度となる。 When the fixing jig 4 is lowered from this state, the curved lowest part of the coating material 6 impregnated with the resist 3 will be
As shown in FIG. 3, it touches the center of the upper surface of the semiconductor wafer 2. Subsequently, as the fixing jig 4 is gradually lowered, the film 5 is deformable, so that the film 5 along with the coating material 6 follows the semiconductor wafer 2 and is flattened from the center, as shown in FIG. The contact portion of the coating material 6 with the semiconductor wafer 2 gradually expands, and the coating material 6 comes into full contact with the upper surface of the semiconductor wafer 2. At this point, fixing jig 4
When the fixing jig 4 is stopped descending and then raised, the resist 3 is applied only to the upper surface of the semiconductor wafer 2. The film thickness of this resist 3 is about 5 μm, which is thicker than the conventional resist.
尚、この実施例においては、レジスト３を用い
たが、この発明はその他の被覆剤を適用してもよ
い。 Although resist 3 was used in this example, other coating materials may be used in the present invention.
また、固定治具４やフイルム５、更に塗布材６
の形状は実施例に限られるものではなく、特に、
半導体ウエハ２は定形、不定形の何れであつても
よいことは勿論である。 In addition, the fixing jig 4, the film 5, and the coating material 6 are also included.
The shape of is not limited to the example, and in particular,
Of course, the semiconductor wafer 2 may have either a fixed shape or an irregular shape.
以上のようにこの発明によれば、変形自在なフ
イルムの下面に塗布材を貼付し、この塗布材に被
覆材を含侵して塗布材を半導体ウエハに押付け、
被覆剤を塗布するようにしたために、被覆剤が半
導体ウエハの片面にのみ確実に塗布されることに
なる。特に、半導体ウエハが不定形であつても、
従来のように他の片面に被覆剤が回り込んだり、
付着することがないから、塗布作業を確実に行う
ことができる。 As described above, according to the present invention, a coating material is attached to the lower surface of a deformable film, the coating material is impregnated with a coating material, and the coating material is pressed onto a semiconductor wafer.
The application of the coating ensures that the coating is applied to only one side of the semiconductor wafer. In particular, even if the semiconductor wafer is irregularly shaped,
The coating material does not wrap around the other side like in the past,
Since there is no adhesion, the coating work can be performed reliably.
また、被覆剤の膜厚を従来に比して厚くするこ
とができると同時に、塗布時に気泡が被覆剤に入
らないので、被覆剤の機能を十分に発揮させるこ
とができる。 Furthermore, the film thickness of the coating material can be made thicker than in the past, and at the same time, air bubbles do not enter the coating material during application, so that the coating material can fully exhibit its functions.
図面はこの発明の一実施例を示し、第１図は被
覆剤塗布装置の斜視図、第２図は同平面図、第３
図は半導体ウエハの接触時におけるフイルム変形
前を示す同一部断面正面図、第４図は半導体ウエ
ハの全面接触時を示す同一部断面正面図である。
１…被覆剤塗布装置、２…半導体ウエハ、３…
レジスト、４…固定治具、４ａ…固定部材、５…
フイルム、５ａ…開口、６…塗布材、７…支持部
材。
The drawings show one embodiment of the present invention, in which Fig. 1 is a perspective view of the coating material application device, Fig. 2 is a plan view of the same, and Fig. 3 is a perspective view of the coating material coating device.
The figure is a partially sectional front view showing the film before deformation upon contact with a semiconductor wafer, and FIG. 1... Coating agent coating device, 2... Semiconductor wafer, 3...
Resist, 4...fixing jig, 4a...fixing member, 5...
Film, 5a... Opening, 6... Coating material, 7... Supporting member.
Claims (1)
ムがその両端部にて取付けられ、このフイルムの
中央部が下方に湾曲されると共に、この中央部に
開口が形成され、更に、フイルムの下面に吸湿性
の塗布材が貼付され、上面中央部に被覆剤が滴下
されて前記塗布材に開口を介して含侵される一
方、前記塗布材の下方に支持部材が設けられ、こ
の支持部材の上端に半導体ウエハが設けられて成
り、この半導体ウエハの上面に前記塗布材を押付
けて全面密接させ、前記被覆剤をウエハ上面に塗
布することを特徴とする半導体ウエハの被覆剤塗
布装置。1 A film is attached at both ends between a pair of fixing members in a fixing jig, the center part of this film is curved downward, an opening is formed in this center part, and a moisture absorbing part is formed on the lower surface of the film. The coating material is applied, and the coating material is dropped onto the center of the upper surface and impregnated into the coating material through the opening.A support member is provided below the coating material, and a semiconductor 1. An apparatus for coating a semiconductor wafer, comprising: a wafer; the coating material is pressed onto the upper surface of the semiconductor wafer so that the coating material is brought into close contact with the entire surface of the semiconductor wafer; and the coating material is coated on the upper surface of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19454383A JPS6085522A (en) | 1983-10-17 | 1983-10-17 | Equipment for coating semiconductor wafer with covering material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19454383A JPS6085522A (en) | 1983-10-17 | 1983-10-17 | Equipment for coating semiconductor wafer with covering material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6085522A JPS6085522A (en) | 1985-05-15 |
| JPS6233738B2 true JPS6233738B2 (en) | 1987-07-22 |
Family
ID=16326278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19454383A Granted JPS6085522A (en) | 1983-10-17 | 1983-10-17 | Equipment for coating semiconductor wafer with covering material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6085522A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235623A (en) * | 1985-08-09 | 1987-02-16 | Fujitsu Ltd | Formed resist film and application thereof |
-
1983
- 1983-10-17 JP JP19454383A patent/JPS6085522A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6085522A (en) | 1985-05-15 |
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