JPS6232681A - Electronic material ceramic and electronic circuit substrate using the same - Google Patents

Electronic material ceramic and electronic circuit substrate using the same

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Publication number
JPS6232681A
JPS6232681A JP17186285A JP17186285A JPS6232681A JP S6232681 A JPS6232681 A JP S6232681A JP 17186285 A JP17186285 A JP 17186285A JP 17186285 A JP17186285 A JP 17186285A JP S6232681 A JPS6232681 A JP S6232681A
Authority
JP
Japan
Prior art keywords
ceramic
electronic
dielectric
ceramic substrate
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17186285A
Other languages
Japanese (ja)
Other versions
JPH0738489B2 (en
Inventor
圭一 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP60171862A priority Critical patent/JPH0738489B2/en
Priority to US06/892,320 priority patent/US4759965A/en
Publication of JPS6232681A publication Critical patent/JPS6232681A/en
Publication of JPH0738489B2 publication Critical patent/JPH0738489B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Structure Of Printed Boards (AREA)
  • Insulating Bodies (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は磁器コンデンサー乃至はこの様なコンデンサー
を内蔵した磁器基板等として利用し得る電子材料セラミ
−2り、及びこれを用いて構成さる電子回路用基体に関
する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an electronic material ceramic that can be used as a ceramic capacitor or a ceramic substrate incorporating such a capacitor, and an electronic device constructed using the same. Regarding circuit substrates.

〔従来の技術〕[Conventional technology]

従来、電子回路用基体は、導体回路のみ、導体回路と抵
抗、もしくは導体回路と抵抗と限られた範囲のコンデン
サーを具備して構成され、その他の機能部分は、素子と
して分離して基体に装着ゴれていた。
Conventionally, electronic circuit boards have been configured with only a conductor circuit, a conductor circuit and a resistor, or a conductor circuit and a resistor and a limited range of capacitors, and other functional parts have been separated as elements and attached to the base. It was broken.

即ち、例えば、従来の磁器基板においては、導体と抵抗
体の内蔵基板が中心であり、コンデンサーはチップ部品
等としてはんだ付により装着していた。この為、電子回
路の小型化には限界があった。第8図にその1例を示す
。51は磁器基板、52は導体回路、53は抵抗体、5
4はチップコンデンサーである。
That is, for example, in a conventional ceramic board, the board mainly has a built-in conductor and a resistor, and a capacitor is attached as a chip component by soldering. For this reason, there was a limit to the miniaturization of electronic circuits. An example is shown in FIG. 51 is a ceramic substrate, 52 is a conductor circuit, 53 is a resistor, 5
4 is a chip capacitor.

近年、同一の磁器基板内で誘電率を変化させる事により
、基板内に複数個のコンデンサーを内蔵させようとする
試みがなされている。つまり第9図に示すように、高誘
電率ε1の部分61と低誘電率ε2の部分62を分離す
る事により同一基板上に複数個のコンデンサーを形成さ
せようとする試みである。しかしながら、従来、同一基
板内に異なった誘電体部分を形成する方法が非常に難し
く、例えば積層セラミックコンデンサーを作製する場合
の煩雑さを考えれば自明である様に、複数個のコンデン
サーを内蔵する基板は、未だ実現乃至実用化されていな
いのが現状である。
In recent years, attempts have been made to incorporate a plurality of capacitors within the same ceramic substrate by changing the dielectric constant within the same substrate. In other words, as shown in FIG. 9, this is an attempt to form a plurality of capacitors on the same substrate by separating a portion 61 with a high dielectric constant ε1 and a portion 62 with a low dielectric constant ε2. However, conventionally, it has been extremely difficult to form different dielectric parts on the same substrate, and as is obvious when considering the complexity of manufacturing multilayer ceramic capacitors, for example, it is difficult to form substrates with multiple capacitors built-in. Currently, this has not yet been realized or put into practical use.

〔発明の解決すべき問題点〕[Problems to be solved by the invention]

本発明は、従来の問題点を解決し、複数の高誘電体部分
を画成し得る電子材料セラミックを提供すべくなされた
ものである。
The present invention has been made to solve the conventional problems and provide an electronic material ceramic that can define a plurality of high dielectric constant parts.

本発明は、また、この様な電子材料セラミックを用いる
ことにより、複数個のコンデンサーを内蔵し得る電子回
路用基体を提供すべくなされたものである。
The present invention has also been made to provide an electronic circuit substrate that can house a plurality of capacitors by using such an electronic material ceramic.

本発明は、更に、誘電体をはじめとする多くの機能部分
を備えしかも小型化され安価な電子回路用基体を提供す
べくなされたものである。
A further object of the present invention is to provide a compact and inexpensive electronic circuit substrate that is equipped with many functional parts including a dielectric material.

〔問題点を解決するための手段〕[Means for solving problems]

即ち、本発明によって提供される電子材料セラミックは
、誘電体乃至はその前駆体を含む成形体に設けられた空
所に誘電率の異なる物質が充填されて形成される誘電率
の異なる部分を有していることを特徴とするものであり
、また、本発明によって提供される電子回路用基体は、
上記電子材料セラミックにより構成されていることを特
徴とするものである。
That is, the electronic material ceramic provided by the present invention has portions with different dielectric constants formed by filling a void provided in a molded body containing a dielectric material or its precursor with substances having different dielectric constants. The electronic circuit substrate provided by the present invention is characterized by:
It is characterized in that it is made of the electronic material ceramic described above.

〔発明の詳細な説明及び実施例〕[Detailed description and examples of the invention]

本発明において前記成形体とは、例えば圧粉体(原料と
なる例えば金属酸化物類の圧粉状の固体)、焼成体又は
焼結体(磁器類等)などを言い、本発明の電子材料セラ
ミックを構成する誘電体乃至は誘電体を形成するための
前駆体(例えば前述の圧粉状の固体や、高誘電体を合成
するときに一次焼成により得られる半導体磁器や半導体
粒子群から成る固体等)を含むものを言う。
In the present invention, the molded body refers to, for example, a green compact (a powder-like solid material such as a metal oxide as a raw material), a fired body or a sintered body (porcelain, etc.), and the electronic material of the present invention Dielectrics that make up ceramics or precursors for forming dielectrics (for example, the powder-like solids mentioned above, semiconductor porcelain obtained by primary firing when synthesizing high dielectric materials, or solids made of semiconductor particles) etc.).

本発明の電子材料セラミックの特徴は、前記成形体に設
けられた空所に誘電率の異なる物質を充填し、必要に応
じて焼成等の工程を経て誘電率の異なる部分を形成せし
めたことにある。従って、成形体に単一もしくは複数の
空所を設け、例えば低誘電率の物質を充填することによ
り、空所の周囲で高誘電率化されるべき部分を2つ以上
に分離して、互いに離隔した2つ以上の高誘電体部分を
画成せしめることができる。
The electronic material ceramic of the present invention is characterized by filling the voids provided in the molded body with substances having different dielectric constants, and forming portions having different dielectric constants through a process such as firing as necessary. be. Therefore, by providing a single or multiple cavities in the molded body and filling them with, for example, a substance with a low dielectric constant, the portion to be made high in dielectric constant can be separated into two or more parts around the cavities and mutually separated. Two or more spaced apart high dielectric portions can be defined.

1つの例として、粒界絶縁型の高誘電体で構成される磁
器基板は、通常例えばB aT i 03にDy203
 、S i02等の成分を添加し混合した圧粉状の成形
体を、−次焼成して半導体化し、次いで焼成体表面に金
属又は金属酸化物(例えばCu 、CuO、MnO2、
T1203等)を塗布し、二次焼成して粒界絶縁層を形
成せしめることにより得られる。この例において本発明
を実施する場合、まず前記圧粉状の成形体、−次焼成後
の焼成体、金属又は金属酸化物を表面に塗布した焼成体
、又は二次焼成後の焼成体の所望の部位に所望の形状の
空所(例えば表層部分に穿たれた凹所等)を設ける。空
所の数は画成すべき誘電体の数によって適宜決められる
。空所を設ける方法としては、例えば圧粉体のプレス成
形、レーザー加工、機械加工(例えばダイヤモンド切削
)、超音波加工等による方法が挙げられる。
As an example, a ceramic substrate composed of a grain-boundary insulated high dielectric material is usually made of, for example, B aT i 03 and Dy203.
, Si02, etc. are added and mixed, and the green compact is then fired to become a semiconductor, and then a metal or metal oxide (e.g. Cu, CuO, MnO2,
T1203, etc.) and secondary firing to form a grain boundary insulating layer. When carrying out the present invention in this example, first, the desired compacted body, the fired body after secondary firing, the fired body whose surface is coated with a metal or metal oxide, or the fired body after secondary firing. A cavity of a desired shape (for example, a recess bored in the surface layer) is provided in the area. The number of voids is appropriately determined depending on the number of dielectrics to be defined. Examples of the method for providing the void space include press molding of a compact, laser processing, mechanical processing (eg, diamond cutting), ultrasonic processing, and the like.

次いで、この様にして設けられる空所に、例えば低誘電
率の物質を充填し、その後の磁器基板を得るための工程
、あるいは必要に応じて行なわれる三次焼成を経て、高
誘電体部分を複数画成した磁器基板を得る。画成される
高誘電体部分の誘電率は互いに同じであっても異なって
いてもよい。
Next, the void space provided in this way is filled with, for example, a low dielectric constant material, and a plurality of high dielectric constant parts are formed through the subsequent process for obtaining a ceramic substrate or tertiary firing, which is performed as necessary. Obtain a defined porcelain substrate. The dielectric constants of the defined high dielectric portions may be the same or different.

異ならせしむる方法としては、例えば塗布添加剤の種類
を変える方法等が挙げられる。なお、この例の磁器基板
を得るために用いられる前記低誘電率物質としては、融
点が磁器本体より低いものがなお更よく、例えばPbS
iO3、BS f03、Li5i03.各種結晶化ガラ
ス等が好適である。
As a method for making the coating different, for example, there is a method of changing the type of coating additive. The low dielectric constant material used to obtain the ceramic substrate of this example is preferably one having a melting point lower than that of the ceramic body, such as PbS.
iO3, BS f03, Li5i03. Various types of crystallized glasses are suitable.

かくして得られる磁器基板には、各々の高誘電体部分の
表面上に導体部分(電極、引出し部等)を設けることに
より、複数個のコンデンサーを内蔵させることができる
。また更に、磁器基板の内部乃至は周囲に、導体部分(
例えばスルホール状の・9体)、抵抗体乃至は絶縁体部
分(例えば通常の薄膜乃至は厚膜形成法により形成され
る)を形成して、多くの機能部分を備えた基板とするこ
とができる。
A plurality of capacitors can be built into the thus obtained ceramic substrate by providing a conductor portion (electrode, lead-out portion, etc.) on the surface of each high dielectric portion. Furthermore, a conductive portion (
For example, by forming through-hole-shaped (9 bodies), resistor or insulator parts (for example, formed by normal thin film or thick film forming method), it is possible to create a substrate with many functional parts. .

以下、具体的実施例を示して、本発明を更に詳しく説明
するが、本発明の実施の態様はこれにより限定されない
Hereinafter, the present invention will be explained in more detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.

実施例1 第1図に本発明の実施例である磁器基板の製造工程を示
す。本実施例においては、第2図(a)に示すようにプ
レス成形時に成形体1に四部2を形成する。次に通常の
磁器コンデンサーを作製するのと同様な工程でBaTi
O3−Dy203−5i02系の誘電体磁器を形成する
。すなわち成形体を所定の雰囲気において一次焼成を行
い、次にCuO等添加剤の塗布を行ない、酸化雰囲気中
において二次焼成を行い、誘電体磁器基板を得る。前記
誘電体磁器基板の凹部に例えばPbSiO3の粉末3を
第2図(b)に示す様に充填した後、三次焼成を行う。
Example 1 FIG. 1 shows the manufacturing process of a ceramic substrate according to an example of the present invention. In this example, as shown in FIG. 2(a), four parts 2 are formed on the molded body 1 during press molding. Next, in the same process as making ordinary porcelain capacitors,
O3-Dy203-5i02-based dielectric ceramic is formed. That is, the molded body is first fired in a predetermined atmosphere, then an additive such as CuO is applied, and a second firing is performed in an oxidizing atmosphere to obtain a dielectric ceramic substrate. After filling the concave portion of the dielectric ceramic substrate with, for example, PbSiO3 powder 3 as shown in FIG. 2(b), tertiary firing is performed.

更に磁器基板に所定の導体部分、抵抗体部分、及び絶縁
体部分を形成する事により、C,R内蔵基板が得られる
Further, by forming predetermined conductor portions, resistor portions, and insulator portions on the ceramic substrate, a C and R built-in substrate can be obtained.

実施例2 第3図に本発明の実施例である磁器基板の他の製造工程
を示す、未実施例においては、成形により所望形状の成
形体21を得(第4図(a))、−次焼成によって半導
体化した磁器基板22においてレーザー照射により凹部
23を形成する(第4図(b))。次に添加剤の塗布を
行い、二次焼成して誘電体磁器基板を得る。前記磁器基
板の凹部に例えばP b S i O3の粉末24を第
4図(c)に示す様に充填する0次に三次焼成を行う。
Example 2 FIG. 3 shows another manufacturing process of the ceramic substrate according to the embodiment of the present invention. A recess 23 is formed by laser irradiation in the ceramic substrate 22 which has been made into a semiconductor by the subsequent firing (FIG. 4(b)). Next, additives are applied and secondary firing is performed to obtain a dielectric ceramic substrate. The concave portion of the ceramic substrate is filled with powder 24 of, for example, P b Si O 3 as shown in FIG. 4(c), and tertiary firing is performed.

更に、この基板に所定の導体部分、抵抗体部分、及び絶
縁体部分を形成する事により、C,R内蔵基板が得られ
る。
Further, by forming predetermined conductor portions, resistor portions, and insulator portions on this substrate, a C and R built-in substrate can be obtained.

実施例3 第5図に本発明の実施例である磁器基板の他の製造工程
を示す。本実施例においては、成形により所望形状の成
形体31を得(第6図(a))、−次焼成により半導体
化した磁器基板に添加剤を塗布後、二次焼成を行い誘電
体磁器基板32を得る。この磁器基板にダイヤモンド工
具を使用した機械加工により凹部33を形成しく第6図
(b))、その凹部に例えばP b S i O3の粉
末34を第6図(c)に示す様に充填する。次に三次焼
成を行う。前記基板に所定の導体部分、抵抗体部分、及
び絶縁体部分を形成する事により、C,R内蔵基板が得
られる。
Embodiment 3 FIG. 5 shows another manufacturing process of a ceramic substrate according to an embodiment of the present invention. In this example, a molded body 31 having a desired shape is obtained by molding (FIG. 6(a)), and after applying an additive to a ceramic substrate made into a semiconductor by secondary firing, a dielectric ceramic substrate is subjected to secondary firing. Get 32. A recess 33 is formed in this ceramic substrate by machining using a diamond tool (FIG. 6(b)), and the recess is filled with powder 34 of, for example, P b Si O3 as shown in FIG. 6(c). . Next, tertiary firing is performed. By forming predetermined conductor portions, resistor portions, and insulator portions on the substrate, a C and R built-in substrate can be obtained.

なお、第7図に前記実施例に示した様な工程により得ら
れる本発明の磁器基板の例を示す、第7図(a)及び(
b)は、それぞれ磁器基板の平面図及び断面図であり、
41が高誘電体部分、42が低誘電体部分である。また
第7図(c)は、更に導体部分43、抵抗体部分44、
及び絶縁体部分45を形成した磁器基板を示している。
In addition, FIG. 7 (a) and (
b) is a plan view and a cross-sectional view of the ceramic substrate, respectively;
41 is a high dielectric portion, and 42 is a low dielectric portion. Further, FIG. 7(c) further shows a conductor portion 43, a resistor portion 44,
and a ceramic substrate on which an insulator portion 45 is formed.

〔発明の効果〕〔Effect of the invention〕

本発明の電子材料セラミックは、各種誘電率の異なる誘
電体を複数画成し得る。従って、これを用いて構成され
る本発明の電子回路用基体は、各種容量のコンデンサー
を複数内蔵することができ、またこの基板に導体、抵抗
体、絶縁体等の各種機能部分を形成することにより、多
くの機能部分を備え、しかも小型化され安価な電子回路
用基体となる。また、この様に基体内でのコンデンサー
、抵抗等の設計の自由度を大幅に向上させることができ
る。
The electronic material ceramic of the present invention can define a plurality of dielectric bodies having various dielectric constants. Therefore, the electronic circuit substrate of the present invention constructed using this can incorporate a plurality of capacitors of various capacities, and various functional parts such as conductors, resistors, and insulators can be formed on this substrate. As a result, it becomes a base for electronic circuits that is equipped with many functional parts, is smaller in size, and is inexpensive. Further, in this way, the degree of freedom in designing capacitors, resistors, etc. within the base can be greatly improved.

なお、本発明においては、成形体に設けられた空所に誘
電率の異なる物質を充填するが1例えば充填材なし、す
なわち空気相のみでも低誘電率化を達成する事が可能で
あるが、基板の一部が極端に薄くなる事により、基板自
体の強度が問題となる。従って、空所に充填材を充填す
る事により強度の向上という効果をも達成し得るもので
ある。
Note that in the present invention, the voids provided in the molded body are filled with substances having different dielectric constants; however, it is possible to achieve a low dielectric constant without a filler, that is, with only an air phase. As some parts of the substrate become extremely thin, the strength of the substrate itself becomes a problem. Therefore, by filling the voids with the filler material, it is possible to achieve the effect of improving the strength.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の1実施例である磁器基板の製造工程
を説明するための工程説明図であり、第2図の(a)は
このときの凹部を形成したプレス成形体の断面図、(b
)は凹部に誘電率の異なる物質を充填した磁器基板の断
面図を示している。 第3図は、本発明の1実施例である磁器基板の他の製造
工程を説明するための工程説明図であり、第4図の(a
)はこのときの成形体、(b)は凹部を形成した半導体
磁器基板、(C)は凹部に誘電率の異なる物質を充填し
た磁器基板のそれぞれの断面図を示している。 第5図は、本発明の1実施例である磁器基板の更に他の
製造工程を説明するための工程説明図であり、第6図の
(a)はこのときの成形体。 (b)は凹部を形成した誘電体磁器基板、(C)は凹部
に誘電率の異なる物質を充填した誘電体磁器基板のそれ
ぞれの断面図を示している。 第7図の(a ”)は、本発明の1実施例である磁器基
板の平面図、(b)は(a)中A−A断面図であり、(
C)は更にこの磁器基板に導体、抵抗体、絶縁体等の機
能部分を形成したR、C内蔵の磁器基板の断面図である
。 第8図は、従来の磁器基板の断面図である。 第9図は、従来試みられている方法による複数の高誘電
体部分を有する磁器基板の断面図である。 1.21.31・Φ・成形体。 2.23,32.41・拳・誘電体磁器。 3.24,33,42・−Φ低誘電率物質。 22・Φ・半導体磁器。 43・・・導体。 44・9−抵抗体。 45・・・絶縁体。 代理人  弁理士 山  下  積  平第1図 (G) (b) 第3図 第4図 (a) (b) (C) M5図 第6図 (b) (C) 第7因 (a) (C)
FIG. 1 is a process explanatory diagram for explaining the manufacturing process of a ceramic substrate according to an embodiment of the present invention, and FIG. , (b
) shows a cross-sectional view of a ceramic substrate whose recesses are filled with substances having different dielectric constants. FIG. 3 is a process explanatory diagram for explaining another manufacturing process of a ceramic substrate according to an embodiment of the present invention, and
) shows a cross-sectional view of the resulting molded body, (b) shows a semiconductor ceramic substrate with a recess formed therein, and (C) shows a cross-sectional view of a ceramic substrate in which the recess is filled with a substance having a different dielectric constant. FIG. 5 is a process explanatory diagram for explaining still another manufacturing process of a ceramic substrate according to an embodiment of the present invention, and FIG. 6(a) is a molded product at this time. (b) shows a cross-sectional view of a dielectric ceramic substrate in which a recess is formed, and (C) shows a dielectric ceramic substrate in which the recess is filled with a substance having a different dielectric constant. FIG. 7(a) is a plan view of a ceramic substrate according to an embodiment of the present invention, and FIG. 7(b) is a sectional view taken along line A-A in FIG.
C) is a sectional view of a ceramic substrate with built-in R and C in which functional parts such as conductors, resistors, and insulators are further formed on this ceramic substrate. FIG. 8 is a cross-sectional view of a conventional ceramic substrate. FIG. 9 is a cross-sectional view of a ceramic substrate having a plurality of high dielectric portions according to a conventional method. 1.21.31・Φ・Molded body. 2.23, 32.41・Fist・Dielectric porcelain. 3.24,33,42・-Φ low dielectric constant material. 22・Φ・Semiconductor porcelain. 43...Conductor. 44.9 - Resistor. 45...Insulator. Agent Patent Attorney Seki Yamashita Figure 1 (G) (b) Figure 3 Figure 4 (a) (b) (C) Figure M5 Figure 6 (b) (C) Cause 7 (a) ( C)

Claims (5)

【特許請求の範囲】[Claims] (1)誘電体乃至はその前駆体を含む成形体に設けられ
た空所に誘電率の異なる物質が充 填されて形成される誘電率の異なる部分を 有していることを特徴とする電子材料セラ ミック。
(1) An electronic material characterized by having portions with different dielectric constants formed by filling a void provided in a molded body containing a dielectric material or its precursor with substances having different dielectric constants. ceramic.
(2)空所に低誘電率の物質が充填されて低誘電率化さ
れている特許請求の範囲第(1) 項記載の電子材料セラミック。
(2) The electronic material ceramic according to claim (1), wherein the void space is filled with a substance having a low dielectric constant to reduce the dielectric constant.
(3)誘電体乃至はその前駆体を含む成形体に設けられ
た空所に誘電率の異なる物質が充 填されて形成される誘電率の異なる部分を 有している電子材料セラミックにより構成 されていることを特徴とする電子回路用基 体。
(3) Comprised of an electronic material ceramic having portions with different dielectric constants formed by filling a void provided in a molded body containing a dielectric material or its precursor with substances having different dielectric constants. An electronic circuit substrate characterized by:
(4)空所に低誘電率物質が充填されて低誘電率化され
た部分を挟んで、互いに離隔した 2つ以上の高誘電体部分を有している特許 請求の範囲第(3)項記載の電子回路用基 体。
(4) Claim (3) comprising two or more high dielectric parts spaced apart from each other with a low dielectric constant part sandwiched between the hollow space filled with a low dielectric constant material and a low dielectric constant part sandwiched therebetween. The electronic circuit substrate described above.
(5)セラミック内部乃至は周囲に、更に、導体、抵抗
体及び絶縁体等のうち少なくとも 1種類の機能部分を有している特許請求の 範囲第(3)項又は第(4)項記載の電子 回路用基体。
(5) The ceramic according to claim (3) or (4) further has at least one type of functional part among a conductor, a resistor, an insulator, etc. inside or around the ceramic. Substrate for electronic circuits.
JP60171862A 1985-08-06 1985-08-06 Electronic material ceramic and substrate for electronic circuit using the same Expired - Fee Related JPH0738489B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60171862A JPH0738489B2 (en) 1985-08-06 1985-08-06 Electronic material ceramic and substrate for electronic circuit using the same
US06/892,320 US4759965A (en) 1985-08-06 1986-08-04 Ceramic, preparation thereof and electronic circuit substrate by use thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60171862A JPH0738489B2 (en) 1985-08-06 1985-08-06 Electronic material ceramic and substrate for electronic circuit using the same

Publications (2)

Publication Number Publication Date
JPS6232681A true JPS6232681A (en) 1987-02-12
JPH0738489B2 JPH0738489B2 (en) 1995-04-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017946U (en) * 1973-06-12 1975-02-27
JPS52127786A (en) * 1976-04-20 1977-10-26 Matsushita Electric Ind Co Ltd Semiconductor device and its preparation
JPS5519075A (en) * 1978-07-31 1980-02-09 Touyoko Shokuhin Kogyo Kk Preparation of coating chocolate for ice cream comprising fruit juice and natural pigment
JPS57177589A (en) * 1981-04-27 1982-11-01 Hitachi Electronics Composite board
JPS5858702A (en) * 1981-10-05 1983-04-07 松下電器産業株式会社 Electrode structure for ceramic board
JPS5867089A (en) * 1981-10-19 1983-04-21 株式会社日立製作所 High frequency circuit board

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017946U (en) * 1973-06-12 1975-02-27
JPS52127786A (en) * 1976-04-20 1977-10-26 Matsushita Electric Ind Co Ltd Semiconductor device and its preparation
JPS5519075A (en) * 1978-07-31 1980-02-09 Touyoko Shokuhin Kogyo Kk Preparation of coating chocolate for ice cream comprising fruit juice and natural pigment
JPS57177589A (en) * 1981-04-27 1982-11-01 Hitachi Electronics Composite board
JPS5858702A (en) * 1981-10-05 1983-04-07 松下電器産業株式会社 Electrode structure for ceramic board
JPS5867089A (en) * 1981-10-19 1983-04-21 株式会社日立製作所 High frequency circuit board

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