JPS6232452A - 改良ポジ型ホトレジスト用現像液 - Google Patents
改良ポジ型ホトレジスト用現像液Info
- Publication number
- JPS6232452A JPS6232452A JP60171834A JP17183485A JPS6232452A JP S6232452 A JPS6232452 A JP S6232452A JP 60171834 A JP60171834 A JP 60171834A JP 17183485 A JP17183485 A JP 17183485A JP S6232452 A JPS6232452 A JP S6232452A
- Authority
- JP
- Japan
- Prior art keywords
- developer
- developing solution
- organic base
- photoresist
- positive type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
- G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171834A JPS6232452A (ja) | 1985-08-06 | 1985-08-06 | 改良ポジ型ホトレジスト用現像液 |
| US06/892,646 US4784937A (en) | 1985-08-06 | 1986-08-04 | Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171834A JPS6232452A (ja) | 1985-08-06 | 1985-08-06 | 改良ポジ型ホトレジスト用現像液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6232452A true JPS6232452A (ja) | 1987-02-12 |
| JPH0567028B2 JPH0567028B2 (Direct) | 1993-09-24 |
Family
ID=15930615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60171834A Granted JPS6232452A (ja) | 1985-08-06 | 1985-08-06 | 改良ポジ型ホトレジスト用現像液 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6232452A (Direct) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6472154A (en) * | 1987-09-12 | 1989-03-17 | Tama Kagaku Kogyo Kk | Positive type photoresist developing solution |
| JP2005309260A (ja) * | 2004-04-23 | 2005-11-04 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用リンス液 |
| JP2022507938A (ja) * | 2018-12-28 | 2022-01-18 | ヨンチャン ケミカル カンパニー リミテッド | 極紫外線リソグラフィー用工程液、及びこれを用いたパターン形成方法 |
-
1985
- 1985-08-06 JP JP60171834A patent/JPS6232452A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6472154A (en) * | 1987-09-12 | 1989-03-17 | Tama Kagaku Kogyo Kk | Positive type photoresist developing solution |
| JP2005309260A (ja) * | 2004-04-23 | 2005-11-04 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用リンス液 |
| JP2022507938A (ja) * | 2018-12-28 | 2022-01-18 | ヨンチャン ケミカル カンパニー リミテッド | 極紫外線リソグラフィー用工程液、及びこれを用いたパターン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0567028B2 (Direct) | 1993-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0451020B2 (Direct) | ||
| US4820621A (en) | Developer solution for positive-working photoresist compositions comprising a base and a non-ionic surfactant | |
| TWI254194B (en) | The aqueous solution of surfactant for developing the coating layer | |
| US5175078A (en) | Positive type photoresist developer | |
| EP3566098B1 (en) | Chemically amplified positive type photoresist composition and pattern forming method using the same | |
| US4873177A (en) | Method for forming a resist pattern on a substrate surface and a scum-remover therefor | |
| EP0062733B1 (en) | Metal ion-free photoresist developer composition | |
| US5164286A (en) | Photoresist developer containing fluorinated amphoteric surfactant | |
| WO2002025379A1 (en) | Developing solution for photoresist | |
| WO2007094299A1 (ja) | レジスト基板用処理液とそれを用いたレジスト基板の処理方法 | |
| US4808513A (en) | Method of developing a high contrast, positive photoresist using a developer containing alkanolamine | |
| EP0394353A1 (en) | Aqueous developing solution and its use in developing positive-working photoresist composition | |
| JPH06118660A (ja) | レジスト用現像液組成物 | |
| JP4040544B2 (ja) | レジスト用現像液組成物およびレジストパターンの形成方法 | |
| JPH04204454A (ja) | レジスト用現像液組成物 | |
| JPS6232452A (ja) | 改良ポジ型ホトレジスト用現像液 | |
| JP2006099059A (ja) | 微細パターン形成方法 | |
| CN1802609B (zh) | 抗蚀剂用显影剂组合物和形成抗蚀图案的方法 | |
| JP2527172B2 (ja) | ポジ型ホトレジスト用現像液 | |
| JPS6232451A (ja) | 改良ポジ型ホトレジスト用現像液 | |
| EP0364895B1 (en) | Positive type photoresist developer | |
| JPS61232453A (ja) | 改良されたポジ型ホトレジスト用現像液 | |
| JPH1124285A (ja) | レジスト用現像液 | |
| JPH0455504B2 (Direct) | ||
| JPH0562736B2 (Direct) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |