JPS6230709B2 - - Google Patents
Info
- Publication number
- JPS6230709B2 JPS6230709B2 JP16052080A JP16052080A JPS6230709B2 JP S6230709 B2 JPS6230709 B2 JP S6230709B2 JP 16052080 A JP16052080 A JP 16052080A JP 16052080 A JP16052080 A JP 16052080A JP S6230709 B2 JPS6230709 B2 JP S6230709B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- alloy
- contact resistance
- temperature
- shows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910007568 Zn—Ag Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16052080A JPS5784166A (en) | 1980-11-13 | 1980-11-13 | 3-5 group compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16052080A JPS5784166A (en) | 1980-11-13 | 1980-11-13 | 3-5 group compound semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5784166A JPS5784166A (en) | 1982-05-26 |
JPS6230709B2 true JPS6230709B2 (US20100268047A1-20101021-C00003.png) | 1987-07-03 |
Family
ID=15716727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16052080A Granted JPS5784166A (en) | 1980-11-13 | 1980-11-13 | 3-5 group compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5784166A (US20100268047A1-20101021-C00003.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254610U (US20100268047A1-20101021-C00003.png) * | 1985-09-26 | 1987-04-04 | ||
JPS6336413U (US20100268047A1-20101021-C00003.png) * | 1986-08-22 | 1988-03-09 | ||
JPH0355377Y2 (US20100268047A1-20101021-C00003.png) * | 1986-08-22 | 1991-12-10 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4816881A (en) * | 1985-06-27 | 1989-03-28 | United State Of America As Represented By The Secretary Of The Navy | A TiW diffusion barrier for AuZn ohmic contacts to p-type InP |
-
1980
- 1980-11-13 JP JP16052080A patent/JPS5784166A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254610U (US20100268047A1-20101021-C00003.png) * | 1985-09-26 | 1987-04-04 | ||
JPS6336413U (US20100268047A1-20101021-C00003.png) * | 1986-08-22 | 1988-03-09 | ||
JPH0355377Y2 (US20100268047A1-20101021-C00003.png) * | 1986-08-22 | 1991-12-10 |
Also Published As
Publication number | Publication date |
---|---|
JPS5784166A (en) | 1982-05-26 |
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