JPS6230708B2 - - Google Patents
Info
- Publication number
- JPS6230708B2 JPS6230708B2 JP56201236A JP20123681A JPS6230708B2 JP S6230708 B2 JPS6230708 B2 JP S6230708B2 JP 56201236 A JP56201236 A JP 56201236A JP 20123681 A JP20123681 A JP 20123681A JP S6230708 B2 JPS6230708 B2 JP S6230708B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- layer
- hydrogenated amorphous
- color image
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910006404 SnO 2 Inorganic materials 0.000 claims 2
- 239000011195 cermet Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14667—Colour imagers
Description
【発明の詳細な説明】
本発明は多色のカラーイメージを判別すること
を可能とする大形カラーイメージセンサに関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a large color image sensor that is capable of distinguishing multicolor images.
従来のカラーセンサは、第１図に示すように単
結晶Siにボロン、りん等の不純物を拡散すること
によつてＰ型、Ｎ型、Ｐ型の三層構造とし、浅い
方のPN接合PS1の深い方のPN接合PS2の分光感度
が異なることを用いて、色を識別するものであ
る。すなわち、単結晶Siの吸収係数は短波長の光
など大きく、それゆえ入射面に近いPN接合PS1は
短波長感度が大となる。一方、内部には長波長の
光しか到達しなくなり、それゆえ内部のPN接合
PS2は長波長感度が大となる。Ａ，Ｃはｐ側電
極、Ｂはｎ側電極である。 As shown in Figure 1, conventional color sensors have a three-layer structure of P-type, N-type, and P-type by diffusing impurities such as boron and phosphorus into single-crystal Si, and the shallower PN junction PS The difference in spectral sensitivity of the deeper PN junction PS 2 of 1 is used to identify colors. That is, the absorption coefficient of single crystal Si is large for short wavelength light, and therefore the PN junction PS 1 close to the incident surface has high short wavelength sensitivity. On the other hand, only long wavelength light reaches the inside, and therefore the internal PN junction
PS 2 has high long wavelength sensitivity. A and C are p-side electrodes, and B is an n-side electrode.
さて、Siの厚さをフイルタとすることから、分
光感度を大きく異ならせるためにはＮ型拡散層を
厚くしなければならず、かつプレーナ構造である
ために深い方の接合PS2面が表面に出ており分光
感度の分離を悪くさせている。 Now, since the thickness of Si is used as a filter, the N-type diffusion layer must be thick in order to make a large difference in spectral sensitivity, and since it has a planar structure, the two deeper bonded PS surfaces are This makes the separation of spectral sensitivities worse.
さらに、単結晶を用いていることから、大面積
のカラーイメージを検知するためにはレンズ等に
よる集光が必要であり、素子えのものが高価であ
るとともに導光系が複雑となり安価、小型化は不
可能である。 Furthermore, since a single crystal is used, in order to detect large-area color images, it is necessary to focus the light with a lens, etc., which makes the element expensive and the light guiding system complicated. is impossible.
本発明は以上の欠点を解決するために、水素化
無定形シリコン用い、接合を積層型として構成
し、かつ大面積の密着カラーイメージセンサを提
供するものである。 In order to solve the above-mentioned drawbacks, the present invention provides a large-area contact color image sensor that uses hydrogenated amorphous silicon, has a laminated junction structure, and has a large area.
本発明は、シランガス（S1H4）をグロー放電分
解により容易に局在準位密度の少い良質な無定形
シリコンを作製できること、ならびにボロン、り
ん添加によりＰ型、Ｎ型無定形シリコンが容易に
形成可能なこと、かつＰ型無定形シリコンと無添
加無定形シリコンとの間に良好な整流性接触が形
成可能なこと、高仕事関数の金属やネサ膜と無添
加無定形シリコンとの間に良好なシヨツトキー接
合が形成可能なこと、高濃度Ｎ型無定形シリコン
あるいは低仕事関数の金属と無添加無定形シリコ
ンが良好なオーミツク接触を有することを利用し
て、二つの整流性接触と導電性を積層して連続的
に形成可能とするものである。 The present invention is that high-quality amorphous silicon with low local level density can be easily produced by glow discharge decomposition of silane gas (S 1 H 4 ), and that P-type and N-type amorphous silicon can be produced by adding boron and phosphorus. It is possible to easily form a good rectifying contact between P-type amorphous silicon and additive-free amorphous silicon, and it is possible to form a good rectifying contact between P-type amorphous silicon and additive-free amorphous silicon. By utilizing the fact that a good Schottky junction can be formed between the two and the good ohmic contact between high concentration N-type amorphous silicon or a low work function metal and additive-free amorphous silicon, two rectifying contacts and It is possible to continuously form conductive layers by laminating them.
さらに無定形シリコンは単結晶シリコンに比較
して吸収係数が１桁高いので、素子の厚さが１桁
以上少くてすみ、かつ薄膜であることから大面積
のカラーイメージセンサが作製可能となり、安価
でかつレンズ系の不要なカラーイメージセンサを
提供するものである。 Furthermore, since amorphous silicon has an absorption coefficient that is one order of magnitude higher than that of single crystal silicon, the thickness of the element can be reduced by more than one order of magnitude, and since it is a thin film, it is possible to fabricate large-area color image sensors at low cost. The present invention provides a color image sensor that is large in size and does not require a lens system.
具体的に素子形状ならびに時数を示して説明を
加える。 A detailed explanation will be given by showing the element shape and the number of hours.
第２図に本発明の一つの構造を示す。１は高仕
事関数金属の白金Ptであり、２は真性（無添加）
無定形シリコン、３は高濃度n+無定形シリコ
ン、４は真性（無添加）無定形シリコン、５は高
仕事関数金属Ptであり、６は二つのPt層と一つの
高濃度n+無定形シリコン層とに電気的接続を行
なわしめる電極である。高仕事関数の金属１と真
性無定形シリコン２により形成された光センサを
PS1、真性無定形シリコン４と高仕事関数の金属
５により形成される光センサPS2とし、PS1側か
ら光を射したとする。ここで、高仕事関数の金属
Pt１の層の膜厚を80Å、真性無定形シリコン２の
層の膜厚を3000Å、高濃度n+無定形シリコン３
の層を1000Å真性無定形シリコン４の層を3000Å
高仕事関数金属Pt５の層を200Åとしたときの
PS1，PS2の短絡電流の波長依存性（分光感度）
を第３図に各々曲線Is1，Is2で示す。さて、この
PS2の短絡電流Is2をPS1の短絡電流Is2で割つた値
の対数をとると、第４図に示すように波長に対し
てその出力はほぼ直線となる。第４図で縦軸は
log（Is2／Is1）、横軸は波長である。このことか
ら、このカラーイメージセンサの素子に光が照射
された時Ps1，Ps2のそれぞれの短絡電流を同時に
測定してみて、電流Is2，Is1の比を対数を算出し
て第４図のグラフを使用して入力光の波長が識別
できる。 FIG. 2 shows one structure of the present invention. 1 is platinum Pt, a high work function metal, and 2 is intrinsic (no additives).
Amorphous silicon, 3 is high concentration n + amorphous silicon, 4 is intrinsic (additive-free) amorphous silicon, 5 is high work function metal Pt, 6 is two Pt layers and one high concentration n + amorphous This is an electrode that makes an electrical connection to the silicon layer. An optical sensor made of high work function metal 1 and intrinsic amorphous silicon 2
Assume that PS 1 is an optical sensor PS 2 formed of intrinsic amorphous silicon 4 and high work function metal 5, and that light is emitted from the PS 1 side. Here, high work function metal
The thickness of the Pt1 layer is 80 Å, the thickness of the intrinsic amorphous silicon 2 layer is 3000 Å, and the high concentration n + amorphous silicon 3
A layer of 1000Å and a layer of intrinsic amorphous silicon 4 of 3000Å
When the layer of high work function metal Pt5 is 200Å,
Wavelength dependence of short-circuit current of PS 1 and PS 2 (spectral sensitivity)
are shown as curves Is 1 and Is 2 in Fig. 3, respectively. Now, this
If we take the logarithm of the value obtained by dividing the short-circuit current Is 2 of PS 2 by the short-circuit current Is 2 of PS 1 , the output becomes approximately linear with respect to wavelength, as shown in FIG. In Figure 4, the vertical axis is
log(Is 2 /Is 1 ), the horizontal axis is the wavelength. From this, when the element of this color image sensor is irradiated with light, the short circuit currents of Ps 1 and Ps 2 are simultaneously measured, and the logarithm of the ratio of the currents Is 2 and Is 1 is calculated and the fourth The wavelength of the input light can be identified using the graph in the figure.
例えばIs1，Is2の値が同じなら第４図の例にお
いてはlog（Is2／Is1）→０に対応する約530nｍの
波長の光であることがわかる。 For example, if the values of Is 1 and Is 2 are the same, it can be seen that in the example of FIG. 4, the light has a wavelength of about 530 nm, which corresponds to log(Is 2 /Is 1 )→0.
本発明は高仕事関数金属１，５として、Pt、
Au、Pdも使用でき電極６として低仕事関数金属
であるMo、Ta、Al、Crなどが使用できる。 The present invention uses Pt as the high work function metals 1 and 5,
Au and Pd can also be used, and low work function metals such as Mo, Ta, Al, and Cr can be used as the electrode 6.
さらに、本発明は第５図ａに示す如く高仕事関
数金属で形成された接合層に代わつてP+無定形
シリコン５８を用いることにより、P+無定形シ
リコン58−真性無定形シリコン４−n+無定形シ
リコン３−真性無定形シリコン４−P+無定形シ
リコン５８を基板５１上に連続的に積層化が容易
に可能となる。 Furthermore, as shown in FIG. 5a, by using P + amorphous silicon 58 instead of the bonding layer formed of a high work function metal, P + amorphous silicon 58 - intrinsic amorphous silicon 4 - n + Amorphous silicon 3-Principle amorphous silicon 4-P + Amorphous silicon 58 can be easily laminated continuously on the substrate 51.
さらに、本発明は第５図ｂの如く、高仕事関数
金属によつて入射光強度が減少することを除くた
めに、高仕事関数金属１，５よりなる接合層をオ
ーバラツプさせない形で積層化することも可能で
あり、このことより短波長端、長波長端における
測定誤差を小さくすることができる。 Furthermore, as shown in FIG. 5b, in order to eliminate the reduction in incident light intensity caused by the high work function metal, the bonding layers made of the high work function metals 1 and 5 are laminated in a non-overlapping manner. This can also reduce measurement errors at the short wavelength end and long wavelength end.
ここで、活性層ならびに接合層は無定形シリコ
ンに不純物を添加してバンドキヤツプを変化させ
た物も使用可能であり、判別するカラーイメージ
の色種によつて選択もまた可能である。 Here, the active layer and the bonding layer can be made of amorphous silicon with impurities added to change the bandcap, and can be selected depending on the color type of the color image to be discriminated.
第１図は従来のカラーセンサの断面図ａと等価
回路図ｂ、第２図は本発明のカラーセンサの断面
図、第３図は本発明のカラーセンサの分光感度特
性を示す図、第４図は短絡電流の波長依存性を示
す図、第５図は本発明の他の実施例を示す図であ
る。
１，５は高仕事関数の金属、２，４は真性無定
形Si、３は高濃度n+無定形Si、６は電極、５１は
基板。
Fig. 1 is a cross-sectional view a and an equivalent circuit diagram b of a conventional color sensor, Fig. 2 is a cross-sectional view of a color sensor of the present invention, Fig. 3 is a diagram showing spectral sensitivity characteristics of the color sensor of the present invention, and Fig. The figure shows the wavelength dependence of short-circuit current, and FIG. 5 is a diagram showing another embodiment of the present invention. 1 and 5 are high work function metals, 2 and 4 are intrinsic amorphous Si, 3 is high concentration n + amorphous Si, 6 is an electrode, and 51 is a substrate.
Claims (1)
１の層と、第１の水素化無定形シリコン層と、水
素化無定形シリコンとオーミツク接触をする導電
層と、第２の水素化無定形シリコン層と、水素化
無定形シリコンと整流性接触をする第２の層を順
次積層し、該第１、２の層および導電層に電気的
に接続する手段を具備したことを特徴とするカラ
ーイメージセンサ。 ２ 第１および第２の層がＰ型の水素化無定形シ
リコンよりなる特許請求の範囲第１項記載のカラ
ーイメージセンサ。 ３ 第１および第２の層が半透明な高仕事関数の
金属又は金属サーメツトよりなる特許請求の範囲
第１項記載のカラーイメージセンサ。 ４ 第１および第２の層がIn2O3、SnO2、In2O3
−SnO2の透明電極よりなる特許請求の範囲第１
項記載のカラーイメージセンサ。 ５ 導電層がn+型の水素化無定形シリコンより
なる特許請求の範囲第１項記載のカラーイメージ
センサ。 ６ 導電層が半透明な低仕事関数の金属よりなる
特許請求の範囲第１項記載のカラーイメージセン
サ。[Scope of Claims] 1. A first layer in rectifying contact with hydrogenated amorphous silicon, a first hydrogenated amorphous silicon layer, a conductive layer in ohmic contact with hydrogenated amorphous silicon, and a first layer in rectifying contact with hydrogenated amorphous silicon; A second layer of hydrogenated amorphous silicon and a second layer that is in rectifying contact with the hydrogenated amorphous silicon are sequentially laminated, and a means for electrically connecting the first and second layers and the conductive layer is provided. A color image sensor characterized by: 2. The color image sensor according to claim 1, wherein the first and second layers are made of P-type hydrogenated amorphous silicon. 3. The color image sensor according to claim 1, wherein the first and second layers are made of a translucent high work function metal or metal cermet. 4 The first and second layers are In 2 O 3 , SnO 2 , In 2 O 3
-Claim 1 consisting of a transparent electrode of SnO 2
Color image sensor described in section. 5. The color image sensor according to claim 1, wherein the conductive layer is made of n + type hydrogenated amorphous silicon. 6. The color image sensor according to claim 1, wherein the conductive layer is made of a translucent low work function metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201236A JPS58105568A (en) | 1981-12-14 | 1981-12-14 | Long length sensor for color image |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201236A JPS58105568A (en) | 1981-12-14 | 1981-12-14 | Long length sensor for color image |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58105568A JPS58105568A (en) | 1983-06-23 |
| JPS6230708B2 true JPS6230708B2 (en) | 1987-07-03 |
Family
ID=16437590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56201236A Granted JPS58105568A (en) | 1981-12-14 | 1981-12-14 | Long length sensor for color image |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58105568A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239055A (en) * | 1984-05-11 | 1985-11-27 | Sanyo Electric Co Ltd | Amorphous silicon photosensor |
| JPH0797631B2 (en) * | 1986-07-07 | 1995-10-18 | 日本板硝子株式会社 | Image sensor |
-
1981
- 1981-12-14 JP JP56201236A patent/JPS58105568A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58105568A (en) | 1983-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4581625A (en) | Vertically integrated solid state color imager | |
| JP5973149B2 (en) | Photodetector | |
| US5130775A (en) | Amorphous photo-detecting element with spatial filter | |
| US4698658A (en) | Amorphous semiconductor device | |
| EP0307484A1 (en) | Color sensor | |
| US4804833A (en) | Color sensing method and device therefor | |
| JPS6230708B2 (en) | ||
| JPS6173033A (en) | Color exposure device | |
| WO1989003593A1 (en) | Low noise photodetection and photodetector therefor | |
| JPH03202732A (en) | Color sensor | |
| JPH03268369A (en) | Color sensor | |
| US7053457B2 (en) | Opto-electronic component | |
| JPH0453003Y2 (en) | ||
| JP3159386B2 (en) | Optical sensor | |
| JPS6177375A (en) | Color sensor | |
| JPH01140676A (en) | Semi-transparent solar cell | |
| JP2016174163A (en) | Optical filter | |
| JPS6222543B2 (en) | ||
| JP3469061B2 (en) | Solar cell | |
| JPS6269568A (en) | Semiconductor color sensor | |
| JPH02238676A (en) | Color sensor | |
| JP2596419B2 (en) | Position detection device | |
| JPH021865Y2 (en) | ||
| JP2764297B2 (en) | Photoelectric conversion device | |
| Kato et al. | Integrated transducer for color distinction |