JPS6230688A - 薄膜の結晶化方法 - Google Patents

薄膜の結晶化方法

Info

Publication number
JPS6230688A
JPS6230688A JP60168726A JP16872685A JPS6230688A JP S6230688 A JPS6230688 A JP S6230688A JP 60168726 A JP60168726 A JP 60168726A JP 16872685 A JP16872685 A JP 16872685A JP S6230688 A JPS6230688 A JP S6230688A
Authority
JP
Japan
Prior art keywords
thin film
film
substrate
melting
crystallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60168726A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0432039B2 (enExample
Inventor
Yutaka Hayashi
豊 林
Kenichi Ishii
賢一 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60168726A priority Critical patent/JPS6230688A/ja
Publication of JPS6230688A publication Critical patent/JPS6230688A/ja
Publication of JPH0432039B2 publication Critical patent/JPH0432039B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP60168726A 1985-07-31 1985-07-31 薄膜の結晶化方法 Granted JPS6230688A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60168726A JPS6230688A (ja) 1985-07-31 1985-07-31 薄膜の結晶化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60168726A JPS6230688A (ja) 1985-07-31 1985-07-31 薄膜の結晶化方法

Publications (2)

Publication Number Publication Date
JPS6230688A true JPS6230688A (ja) 1987-02-09
JPH0432039B2 JPH0432039B2 (enExample) 1992-05-28

Family

ID=15873284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60168726A Granted JPS6230688A (ja) 1985-07-31 1985-07-31 薄膜の結晶化方法

Country Status (1)

Country Link
JP (1) JPS6230688A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63139240U (enExample) * 1987-03-03 1988-09-13

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855395A (ja) * 1981-09-30 1983-04-01 Toshiba Corp シリコン単結晶膜の成長方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855395A (ja) * 1981-09-30 1983-04-01 Toshiba Corp シリコン単結晶膜の成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63139240U (enExample) * 1987-03-03 1988-09-13

Also Published As

Publication number Publication date
JPH0432039B2 (enExample) 1992-05-28

Similar Documents

Publication Publication Date Title
JPS59208783A (ja) 薄膜トランジスタ
JPS62181419A (ja) 多結晶シリコンの再結晶化法
US9147838B2 (en) Phase change current density control structure
US7052993B2 (en) Thin film transistor having copper alloy wire and method of manufacturing the same
JP3774871B2 (ja) 遅延型薄膜ヒューズ
JPH11514800A (ja) 電子装置製造
JPH0445584A (ja) 相転移型メモリ素子およびその製造方法
US4128681A (en) Method for producing an InSb thin film element
JPH0432039B2 (enExample)
JPH04253323A (ja) 半導体装置の製造方法
JPH0556314B2 (enExample)
JPH03227068A (ja) 薄膜トランジスタおよびその製造方法
JPS62286282A (ja) 薄膜トランジスタの製造方法
JPH01302768A (ja) 逆スタガー型シリコン薄膜トランジスタ
JPH0567782A (ja) 薄膜トランジスタとその製造方法
JP2939819B2 (ja) 薄膜トランジスタの製造方法
JPS5871661A (ja) 薄膜トランジスタの製造方法
JPS6347253B2 (enExample)
JPH05343633A (ja) 半導体装置およびその製造方法
JPS63207181A (ja) 半導体材料
JPH0614511B2 (ja) 半導体薄膜の結晶化方法
JPH0570824B2 (enExample)
JPS5948961A (ja) 半導体装置の製造方法
JPS62152173A (ja) 薄膜電界効果トランジスタ
JPS61212013A (ja) 半導体薄膜の結晶化法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term