JPS6230342A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6230342A
JPS6230342A JP16886485A JP16886485A JPS6230342A JP S6230342 A JPS6230342 A JP S6230342A JP 16886485 A JP16886485 A JP 16886485A JP 16886485 A JP16886485 A JP 16886485A JP S6230342 A JPS6230342 A JP S6230342A
Authority
JP
Japan
Prior art keywords
bumps
pattern
chip
plate
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16886485A
Other languages
Japanese (ja)
Inventor
Yoshimasa Hiki
比企 能正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16886485A priority Critical patent/JPS6230342A/en
Publication of JPS6230342A publication Critical patent/JPS6230342A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49572Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16237Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To microminiaturize a pattern by forming a plurality of bumps on the periphery and the interior of a chip, obtaining a distance between bumps capable of connecting with a conductor pattern on a thin insulating plate and forming on a thin polyimide plate a pattern except the bump connector and external connector. CONSTITUTION:A semiconductor chip 1 has a plurality of bumps, which are formed of bumps 2a existing on the periphery and bumps 2b existing in the interior. A bump connector hole 4 and an external connector hole 5 of a thin plate 3 of polyimide (insulator) are punched in advance, a copper foil is contacted closely on the plate 3, and the prescribed pattern 6 is then formed. In other words, an insulating circuit board having the gold-plated pattern exposed in the holes 4, 5 on the plate 3 is formed. The pattern projected to the hole of the thin plate and a plurality of bumps 2a, 2b on the chip are positioned at 1:1 and connected.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の端子接続技術に関し、特に多端子
を有する半導体チップのリード端子接続技術に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a terminal connection technique for a semiconductor device, and more particularly to a lead terminal connection technique for a semiconductor chip having multiple terminals.

〔従来の技術〕[Conventional technology]

従来、この種のリード端子接続は、半導体チップの周辺
部にバンプ電極を形成し、ポリイミドのテープ上に形成
された配線パターンとバンプを接続するTAB (Ta
pe Automated Bonding )技術に
より行われていた。
Conventionally, this type of lead terminal connection involves forming bump electrodes on the periphery of a semiconductor chip, and connecting the bumps to a wiring pattern formed on a polyimide tape (TAB
pe Automated Bonding) technology.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のリード端子接続技術は、接続用バンプが
半導体チップの周辺部のみに存在する定め、多くの入出
力リード端子を必要とする半導体装置において、必要人
出力リード端子を形成することが困難となるという欠点
がある。すなわち、第2図(a)は従来の電極リード引
出しを示す平面図、同図(b)は断面図である。図にお
いて、llは周辺にバング電極12を有する半導体チッ
プであり、35u幅のポリイミドテープ13上に形成さ
れた金メッキされた銅パターン16がバンプ電m12に
接続される。銅パターン16は、半導体チップ11との
接続部ではポリイミドチーブ13の支持がない片持ち梁
の状態となっている。従って、多端子接続のためパター
ン16のピッチを狭くすると、パターンの幅も狭くなり
、強度が劣化し、パターンの精度が洛ち、バンプ12と
パターン16の接続が困難となる。
In the conventional lead terminal connection technology described above, connection bumps exist only on the periphery of the semiconductor chip, making it difficult to form necessary output lead terminals in semiconductor devices that require many input/output lead terminals. There is a drawback that. That is, FIG. 2(a) is a plan view showing a conventional electrode lead drawer, and FIG. 2(b) is a sectional view. In the figure, 11 is a semiconductor chip having a bump electrode 12 on its periphery, and a gold-plated copper pattern 16 formed on a 35u wide polyimide tape 13 is connected to a bump electrode m12. The copper pattern 16 is in a cantilevered state without the support of the polyimide chip 13 at the connection portion with the semiconductor chip 11. Therefore, when the pitch of the pattern 16 is narrowed for multi-terminal connection, the width of the pattern also becomes narrow, the strength deteriorates, the accuracy of the pattern decreases, and the connection between the bumps 12 and the pattern 16 becomes difficult.

一方第2図(a)の平面図のように、バンプ12を周辺
に形成するために多くの入出力端子を必要とする半導体
チップにおいては、バンプ12のバンプ間距離が狭くな
る。従って多くの入出力端子、即ち多くのバンプ12を
必要とする半導体チップは実現困難となる。また逆に、
必要なバンプ間距離を確保し、かつ多くのバンプを周辺
に形成しようとする場合には、半導体チップサイズが大
きくなり歩留りが低下し原価が高くなる。
On the other hand, in a semiconductor chip that requires many input/output terminals in order to form bumps 12 around it, as shown in the plan view of FIG. 2(a), the distance between the bumps 12 becomes narrow. Therefore, it becomes difficult to realize a semiconductor chip that requires many input/output terminals, that is, many bumps 12. And vice versa,
When attempting to secure the necessary distance between bumps and form many bumps around the semiconductor chip, the size of the semiconductor chip increases, the yield decreases, and the cost increases.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体装置は、−表面上でかつ周辺および内部
に複数のバンプ電極を有する半導体チップの前記バンプ
に接続された引出しリードを有するが、この引出しリー
ドは、絶縁薄板上に設けた導体パターンからなり、かつ
、前記絶94板の前記テップのバング位置にあけた穴に
前記導体パターンの一端を突出させて前記バングと接続
し、この導体パターンの他端は外部接続穴に露出させて
外部接続がな6れる。
The semiconductor device of the present invention - has a lead connected to the bump of a semiconductor chip having a plurality of bump electrodes on the surface, around the periphery, and inside the semiconductor chip; and one end of the conductor pattern is made to protrude into a hole drilled at the bang position of the tip of the 94-board board and connected to the bang, and the other end of the conductor pattern is exposed to the external connection hole and connected to the outside. Connection is established.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図(a)は本発明の一実施例の平面図、同図(b)
は同図(a)のA−A断面図である。これらの図におい
て、半導体チップ1は複数のバンプを有し、そのバンプ
は、周辺部に存在するバング2aと内部に存在するバン
プ2bとからなる。一方ポリイミド(絶碌物)の薄板3
のバンプ接続部穴4および外部接続部穴5を前以って打
ち抜き、ポリイミド薄板3上に鋼箔を密着させる。その
後、所定のパターン6を衆知のエツチング技術とメッキ
技術で形成する。即ち、バンプ接続部穴4と外部接続部
穴5に露出した金メッキされたパターンをポリイミド薄
板3上に有する絶縁性配線基板を形成する。
FIG. 1(a) is a plan view of an embodiment of the present invention, and FIG. 1(b) is a plan view of an embodiment of the present invention.
is a sectional view taken along line A-A in FIG. In these figures, a semiconductor chip 1 has a plurality of bumps, and the bumps are composed of a bump 2a existing on the periphery and a bump 2b existing inside. On the other hand, polyimide (exquisite) thin plate 3
The bump connection holes 4 and the external connection holes 5 are punched out in advance, and the steel foil is tightly attached onto the polyimide thin plate 3. Thereafter, a predetermined pattern 6 is formed using well-known etching and plating techniques. That is, an insulating wiring board having a gold-plated pattern exposed in the bump connection hole 4 and the external connection hole 5 on the polyimide thin plate 3 is formed.

この配線薄板のバンプ接続部穴4を突出した導体パター
ンとチップ上の複数のバンプ2a、2bを1対lに位置
合せし、両者t−衆知の接続技術により接続する。この
ようにして多くの入出力リード端子を有する半導体装置
を実現する。
The conductor pattern protruding from the bump connection hole 4 of this thin wiring board and the plurality of bumps 2a, 2b on the chip are aligned one to one, and both are connected by a connection technique known in the art. In this way, a semiconductor device having many input/output lead terminals is realized.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、複数のバンプをチップ周
辺部および内部に形成し、絶縁薄板上の導体パターンに
接続ill’T 奮なバンプ間距離を確保することおよ
びバンプ接続部と外部接続部以外のパターンはポリイミ
ド薄板上に形成することにより、パターンの微細化を可
能にすることにより、多くの入出力リード端子を必要と
する半導体装置を実現できる効果がある。
As explained above, the present invention forms a plurality of bumps on the periphery and inside of a chip, connects them to a conductor pattern on a thin insulating plate, secures a distance between the bumps, and connects the bumps to the external connection area. By forming other patterns on a polyimide thin plate, it is possible to miniaturize the pattern, which has the effect of realizing a semiconductor device that requires many input/output lead terminals.

【図面の簡単な説明】[Brief explanation of drawings]

第1図1alは本発明の一実施例に保る配線薄板とそれ
に接続した半導体チップの平面図、同図(b)は同図(
a)のA−A断面図、第2図(a)は従来のP3嫌テー
プとそれに接続した半導体チップの平面図、同図tb)
は同図(a)のA−A#!fr而図であ面。 1.11・・・・・・半導体チップ、2a・・・・・・
周辺バンプ、2b・・・−・・内部バング、3.13・
・・・・・ポリイミド薄板、4・・・・・・バンプ穴、
5・・・・・・外部接続穴、6゜16・・・・・・導体
パターン。 7、子;69□、 代理人 弁理士  内 原   晋(ハ、−1,”・(
bン 第 7図 (ll) rb) 第2図
1al is a plan view of a thin wiring board and a semiconductor chip connected thereto according to one embodiment of the present invention, and FIG.
Figure 2 (a) is a plan view of a conventional P3 tape and a semiconductor chip connected to it; Figure 2 (tb)
is A-A#! in figure (a). A mask with a picture. 1.11... Semiconductor chip, 2a...
Peripheral bump, 2b --- Internal bang, 3.13.
...Polyimide thin plate, 4...Bump hole,
5... External connection hole, 6゜16... Conductor pattern. 7, child; 69□, agent: Susumu Uchihara, patent attorney (ha, -1,”・(
Figure 7 (ll) rb) Figure 2

Claims (1)

【特許請求の範囲】[Claims] 絶縁薄板上に設けた導体パターンを半導体チップ上のバ
ンプ電極に接続し、前記チップの電極リード引出しを行
った半導体装置において、前記チップ上のバンプ電極は
チップ周辺およびその内側にも設けられ、かつ、前記絶
縁薄板は前記バンプ電極の位置および外部接続部に穴が
あけられ、この穴に前記導体パターンが突出または露出
され、前記バンプ位置穴に突出した導体パターンの先端
部が前記バンプ電極と接続されていることを特徴とする
半導体装置。
In a semiconductor device in which a conductive pattern provided on an insulating thin plate is connected to a bump electrode on a semiconductor chip and an electrode lead of the chip is drawn out, the bump electrode on the chip is also provided around and inside the chip, and , the insulating thin plate has a hole formed at the position of the bump electrode and an external connection part, the conductor pattern protrudes or is exposed in the hole, and the tip of the conductor pattern protruding into the bump position hole is connected to the bump electrode. A semiconductor device characterized by:
JP16886485A 1985-07-31 1985-07-31 Semiconductor device Pending JPS6230342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16886485A JPS6230342A (en) 1985-07-31 1985-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16886485A JPS6230342A (en) 1985-07-31 1985-07-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6230342A true JPS6230342A (en) 1987-02-09

Family

ID=15875972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16886485A Pending JPS6230342A (en) 1985-07-31 1985-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6230342A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2635916A1 (en) * 1988-08-23 1990-03-02 Bull Sa HIGH DENSITY INTEGRATED CIRCUIT SUPPORT AND MANUFACTURING METHOD THEREOF
US4985749A (en) * 1988-03-22 1991-01-15 Bull S.A. Substrate for very large scale integrated circuit and apparatus for selective tinning of the substrate leads
US5021866A (en) * 1987-09-28 1991-06-04 Kabushiki Kaisha Toshiba Semiconductor integrated circuit apparatus
US5229328A (en) * 1990-10-24 1993-07-20 International Business Machines Corporation Method for bonding dielectric mounted conductors to semiconductor chip contact pads
US5452182A (en) * 1990-04-05 1995-09-19 Martin Marietta Corporation Flexible high density interconnect structure and flexibly interconnected system
JPH09252023A (en) * 1996-03-15 1997-09-22 Nec Corp Semiconductor device and its manufacturing method
US5686352A (en) * 1993-07-26 1997-11-11 Motorola Inc. Method for making a tab semiconductor device with self-aligning cavity and intrinsic standoff

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512791A (en) * 1978-07-14 1980-01-29 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512791A (en) * 1978-07-14 1980-01-29 Nec Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021866A (en) * 1987-09-28 1991-06-04 Kabushiki Kaisha Toshiba Semiconductor integrated circuit apparatus
US4985749A (en) * 1988-03-22 1991-01-15 Bull S.A. Substrate for very large scale integrated circuit and apparatus for selective tinning of the substrate leads
US5081949A (en) * 1988-03-22 1992-01-21 Bull S.A. Apparatus for selective tinning of substrate leads
FR2635916A1 (en) * 1988-08-23 1990-03-02 Bull Sa HIGH DENSITY INTEGRATED CIRCUIT SUPPORT AND MANUFACTURING METHOD THEREOF
US5452182A (en) * 1990-04-05 1995-09-19 Martin Marietta Corporation Flexible high density interconnect structure and flexibly interconnected system
US5229328A (en) * 1990-10-24 1993-07-20 International Business Machines Corporation Method for bonding dielectric mounted conductors to semiconductor chip contact pads
US5686352A (en) * 1993-07-26 1997-11-11 Motorola Inc. Method for making a tab semiconductor device with self-aligning cavity and intrinsic standoff
JPH09252023A (en) * 1996-03-15 1997-09-22 Nec Corp Semiconductor device and its manufacturing method

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