JPS62299067A - Infrared ray detector - Google Patents
Infrared ray detectorInfo
- Publication number
- JPS62299067A JPS62299067A JP61141332A JP14133286A JPS62299067A JP S62299067 A JPS62299067 A JP S62299067A JP 61141332 A JP61141332 A JP 61141332A JP 14133286 A JP14133286 A JP 14133286A JP S62299067 A JPS62299067 A JP S62299067A
- Authority
- JP
- Japan
- Prior art keywords
- infrared rays
- reflected
- reflecting film
- light receiving
- detection device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 14
- 229910021339 platinum silicide Inorganic materials 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
この発明は赤外線検出装置に関する。４〔従来の技術〕
従来のシヨ・７トキバリアダイオードを用いた赤外線Ｃ
ＯＤイメージセンサ（ＳＢ−Ｉ ＲＣＣＤ）について＼
Ｗ、Ｆ、Ｋｏｓｏｎｏｃｋｙ （コソノッキー）等の
Ｓ Ｐ Ｉ Ｅ （Ｔｈｅ ５ｏｃｉｅｔｙ ｏｆ Ｐ
ｈｏｔｏ−Ｏｐｔｉｃａｌ Ｉｎｓｔｒｕｍｅｎｔａｔ
ｉｏｎ Ｅｎｇｉｎｅｅｒｓ） ＋４４３１１６７ペー
ジ、１９８３年の論文をもとに説明する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] This invention relates to an infrared detection device. 4 [Conventional technology] Infrared C using conventional barrier diodes
About OD image sensor (SB-I RCCD)
S P I E (The 5ociety of P) such as W, F, Kosonocky
photo-Optical Instrumentat
ion Engineers) +4431167 pages, explanation based on a 1983 paper.
第２図は、ＳＢ−ＩＲＣＯＤの模式的平面図である。受
光部１には逆バイアスされたショットキバリアダイオー
ドが用いられており、水平方向と垂直方向に規則的に配
列されている。受光部１の列の一方側に近接して垂直Ｃ
ＯＤレジスタ２が設けられており、この垂直ＣＣＤレジ
スタ２と受光部１との間にトランスフアゲ−［・部３が
設けられている。垂直ＣＣＤレジスタ２とトランスファ
ゲート部３とは信号読み出し部を構成し、受光部１と読
み出し部とで画素が構成される。さらに、垂直ＣＣＤレ
ジスタ２の電荷転送方向の端部には水平ＣＣＤレジスタ
４が設けられており、水平ＣＯＤレジスタ４の電荷転送
方向の端部には出力部５が設けられている。FIG. 2 is a schematic plan view of SB-IRCOD. The light receiving section 1 uses reverse biased Schottky barrier diodes, which are regularly arranged in the horizontal and vertical directions. Vertical C adjacent to one side of the row of light receiving sections 1
An OD register 2 is provided, and a transfer gate section 3 is provided between the vertical CCD register 2 and the light receiving section 1. The vertical CCD register 2 and the transfer gate section 3 constitute a signal readout section, and the light receiving section 1 and the readout section constitute a pixel. Further, a horizontal CCD register 4 is provided at the end of the vertical CCD register 2 in the charge transfer direction, and an output section 5 is provided at the end of the horizontal COD register 4 in the charge transfer direction.
第３図は、第２図の５Ｂ−ＩＲＣＣＤの単位画素の水平
方向の模式的断面図である。ｐ型シリコン基板６の一主
面に白金シリサイド層７が形成されている。逆バイアス
耐圧を高めるために白金シリサイド層７のエツジ部と接
する領域には、ｎ型のガードリング部８が形成されてい
る。白金シリサイド層７の上方には、アルミニウムの反
射膜９が酸化膜１０を介して設けられている。白金シリ
サイド層７とトランスフアゲ−目１とを電気的に接続す
る目的で、ｎ十領域１２が形成されている。白金シリサ
イド層７とｎ十領域１２とは、オーム接触している。ト
ランスファゲート１１の下のチャネルは表面型である。3 is a schematic horizontal cross-sectional view of a unit pixel of the 5B-IRCCD shown in FIG. 2. FIG. A platinum silicide layer 7 is formed on one main surface of a p-type silicon substrate 6 . In order to increase the reverse bias breakdown voltage, an n-type guard ring portion 8 is formed in a region in contact with the edge portion of the platinum silicide layer 7. An aluminum reflective film 9 is provided above the platinum silicide layer 7 with an oxide film 10 interposed therebetween. An n+ region 12 is formed for the purpose of electrically connecting the platinum silicide layer 7 and the transfer gate 1. The platinum silicide layer 7 and the n+ region 12 are in ohmic contact. The channel under transfer gate 11 is of a surface type.
トランスファゲート１１に隣接して垂直ＣＣＤレジスタ
用の駆動ゲート１３とｎ型の埋め込み層１４とが形成さ
れている。Adjacent to the transfer gate 11, a drive gate 13 for a vertical CCD register and an n-type buried layer 14 are formed.
第２図および第３図で示した５Ｂ−ＩＲＣＣＤでは、裏
面より赤外線が入射し、白金シリサイド層７に赤外線が
吸収され、エネルギーの大きいエレクトロンやホールが
生成される。ｐ型シリコン基板６と白金シリサイド層７
とがなすショットキバリアダイオードのショソトキバリ
アハイトは０．２〜０．２７ｅＶであるが、このバリア
ハイドを赤外線によって励起されたホットホールが越え
、ｐ型シリコン基板６へ注入され、エレクトロンとホー
ルが分離され、白金シリサイド層７に残ったエレクトロ
ンが信号電荷となる。信号電荷は白金シリサイド層７と
これとオーム接触しているｎ十領域１２とに蓄積される
。フィールド期間またはフレーム期間毎にトランスファ
ゲート部３がオン状態になり、白金シリサイド層７とｎ
＋領域１２とにより垂直ＣＯＤレジスタ２へ信号電荷は
転送され、さらに垂直ＣＣＤレジスタ２と水平ＣＣＤレ
ジスタ４の働きにより出力部５へ転送され、固定撮像素
子外部へ出力される。In the 5B-IRCCD shown in FIGS. 2 and 3, infrared rays enter from the back surface, are absorbed by the platinum silicide layer 7, and generate high-energy electrons and holes. p-type silicon substrate 6 and platinum silicide layer 7
The Schottky barrier height of the Schottky barrier diode made by Toga is 0.2 to 0.27 eV, but hot holes excited by infrared rays cross this barrier hide and are injected into the p-type silicon substrate 6, where electrons and holes are generated. The separated electrons remaining in the platinum silicide layer 7 become signal charges. Signal charges are accumulated in the platinum silicide layer 7 and the n+ region 12 in ohmic contact therewith. The transfer gate section 3 is turned on every field period or frame period, and the platinum silicide layer 7 and n
The signal charge is transferred to the vertical COD register 2 by the + region 12, and further transferred to the output section 5 by the functions of the vertical CCD register 2 and the horizontal CCD register 4, and output to the outside of the fixed image sensor.
上述した従来の赤外線検出装置において、アルミニウム
の反射膜９は、裏面より入射した赤外線のうちで白金シ
リサイド屓７に吸収されなかったものを反射し、再度白
金シリサイド層７に入射させることによって量子効率の
向上を図る目的で設けられている。In the conventional infrared detection device described above, the aluminum reflective film 9 reflects the infrared rays that are not absorbed by the platinum silicide layer 7 from among the infrared rays incident from the back surface, and makes the infrared rays incident on the platinum silicide layer 7 again, thereby increasing the quantum efficiency. It was established for the purpose of improving the quality of life.
第４図は多数の画素を含む従来の赤外線検出装置の模式
的断面図である。簡単のために、白金シリサイド層７の
うちでｐ型シリコン基板６と対向し赤外線に感度を持つ
受光部１５とアルミニウムの反射膜９とを示した。さら
にＳＢ−Ｉ ＲＣＣＤＣＣＤチップれた所に、赤外線を
散乱する散乱体１６が設けられている。散乱体１６とし
ては、ＳＢ−１ＲＣＣＤチツプをマウントしたケースの
キャップや冷却器のヘッドなどが考えられる。FIG. 4 is a schematic cross-sectional view of a conventional infrared detection device including a large number of pixels. For the sake of simplicity, a light-receiving section 15 that faces the p-type silicon substrate 6 and is sensitive to infrared rays in the platinum silicide layer 7 and an aluminum reflective film 9 are shown. Furthermore, a scatterer 16 for scattering infrared rays is provided at a location below the SB-I RCCD CCD chip. As the scatterer 16, the cap of the case on which the SB-1RCCD chip is mounted, the head of a cooler, etc. can be considered.
第４図において矢印ａとｂは赤外線の光路を示している
。光路ａは受光部１５で吸収されなかった赤外線がアル
ミニウムの反射膜９で反射され、再び受光部１５へ入射
する場合を示している。最初に通過した受光部１５と同
じかせいぜい隣の受光部１５に反射光は入射する。これ
に対して、光路すは受光部１５で吸収されなかった赤外
線がアルミニウムの反射膜９の隙間を通過し、遠方の散
乱体１６によって反射され、再び受光部１５へ入射する
場合を示している。光路すの場合、最初に通過した受光
部１５のある画素から大きく離れた画素の受光部１５へ
入射することもある。このように従来の赤外線検出装置
では、光路すのような遠方の散乱体による反射の影響が
あるために、５Ｂ−ＩＲＣＣＤの再生画素の像がボケで
、解像度が大きく劣化するという欠点があった。In FIG. 4, arrows a and b indicate the optical path of infrared rays. Optical path a shows a case where infrared rays that are not absorbed by the light receiving section 15 are reflected by the aluminum reflective film 9 and enter the light receiving section 15 again. The reflected light enters the same or at most the next light receiving part 15 as the light receiving part 15 that it passed through first. In contrast, the optical path shows the case where the infrared rays that were not absorbed by the light receiving section 15 pass through the gap in the aluminum reflective film 9, are reflected by the distant scatterer 16, and enter the light receiving section 15 again. . In the case of an optical path, the light may enter the light receiving section 15 of a pixel far away from the pixel of the light receiving section 15 through which it first passes. As described above, conventional infrared detection devices have the disadvantage that the image of the reproduced pixel of the 5B-IRCCD is blurred and the resolution is significantly degraded due to the influence of reflection from distant scatterers such as light paths. .
この発明の目的は上記の欠点を除去し、解像度のよい赤
外線検出装置を提供することにある。An object of the present invention is to eliminate the above-mentioned drawbacks and provide an infrared detection device with good resolution.
この発明は、半導体基板の一主面に受光部と信号読み出
し部とを有する画素が配列された裏面照射型赤外線検出
装置において、画素表面全面に反射膜が設けられている
ことを特徴とする。The present invention is a back-illuminated infrared detection device in which pixels having a light receiving section and a signal readout section are arranged on one main surface of a semiconductor substrate, and is characterized in that a reflective film is provided on the entire surface of the pixel.
この発明の赤外線検出装置では、二次元ないしは一次元
に画素が配列されている受光面上の全面にアルミニウム
などの金属製反射膜が形成されているために、受光部で
吸収されなかった赤外線は必ず反射膜によって反射され
る。このために、反射赤外線は反射前に通過した画素と
同じ画素かせいぜい隣接した画素に入射し、解像度を劣
化させることなく、反射赤外線を利用することで量子効
率を高くすることができる。In the infrared detection device of the present invention, a reflective film made of metal such as aluminum is formed on the entire surface of the light-receiving surface where pixels are arranged two-dimensionally or one-dimensionally, so that infrared rays that are not absorbed by the light-receiving section are It is always reflected by a reflective film. For this reason, the reflected infrared rays are incident on the same pixel or at most an adjacent pixel to which the reflected infrared rays passed before reflection, and quantum efficiency can be increased by using the reflected infrared rays without degrading the resolution.
以下、図面を用いてこの発明の一実施例の説明を行う。 An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の一実施例の５ＢＩＲＣＣＤの単位画
素の水平方向の模式的断面図である。FIG. 1 is a schematic horizontal cross-sectional view of a unit pixel of a 5 BIRCCD according to an embodiment of the present invention.
このＳＢ−Ｉ ＲＣＣＤの模式的平面図は第２図と同様
である。なお、第１図において、第３図と同一の参照番
号は同一の構成要素を示す。この装置ではデバイス表面
に酸化膜１０ａを介して全面にアルミニウムの反射膜９
が形成され、さらに反射膜９の上の保護膜のための酸化
膜１０ｂが形成されている。A schematic plan view of this SB-I RCCD is similar to FIG. 2. Note that in FIG. 1, the same reference numbers as in FIG. 3 indicate the same components. In this device, an aluminum reflective film 9 is provided on the entire surface of the device via an oxide film 10a.
is formed, and an oxide film 10b serving as a protective film on the reflective film 9 is further formed.
第５図は多数の画素を含む本実施例の模式的断面図であ
る。図において第４図と同一記号は同一の構成要素を示
している。このＳＢ−Ｉ ＲＣＣＤでは矢印線ａとｂで
示すように、ｐ型シリコン基板６の主面に対してどのよ
うな角度で入射した赤外線に対しても、受光部１５で吸
収されなかったものは必ず反射膜９で反射される。反射
した赤外光は反射前に通過した受光部と同じ受光部かせ
いぜい隣接した受光部に入射する。従って、遠方の散乱
体１６の影響を受けず、解像度を劣化させることなく、
反射赤外線を利用することで量子効率を高くすることが
できる。FIG. 5 is a schematic cross-sectional view of this embodiment including a large number of pixels. In the figure, the same symbols as in FIG. 4 indicate the same components. In this SB-I RCCD, as shown by arrow lines a and b, infrared rays that are incident on the main surface of the p-type silicon substrate 6 at any angle are not absorbed by the light receiving section 15. It is always reflected by the reflective film 9. The reflected infrared light enters the same light receiving section through which it passed before reflection, or at most an adjacent light receiving section. Therefore, without being affected by the distant scatterer 16 and without deteriorating the resolution,
Quantum efficiency can be increased by using reflected infrared rays.
以上の実施例では５Ｂ−Ｉ ＲＣＣＤの場合を説明した
が、走査回路はＣＣＤレジスタに限らず、ＭＯＳ型やそ
の他の方式であってもよい。また、ショットキバリアダ
イオード型のセンサのみでなく、狭バンドキャンプの半
導体を用いた赤外線検出装置においても本発明を適用で
きる。なお、反射膜としては、アルミニウムなどの金泥
の他、各種材料を用いることができる。In the above embodiments, the case of a 5B-I RCCD has been described, but the scanning circuit is not limited to a CCD register, but may be of a MOS type or other type. Furthermore, the present invention can be applied not only to Schottky barrier diode type sensors but also to infrared detection devices using narrow band camp semiconductors. Note that various materials can be used as the reflective film in addition to gold paint such as aluminum.
このように、この発明による赤外線検出装置では、反射
膜をデバイス受光面全体に設けることによって、遠方の
散乱体の影響を排除し、解像度のよい再生画像が得られ
る。As described above, in the infrared detection device according to the present invention, by providing a reflective film over the entire light-receiving surface of the device, the influence of distant scatterers can be eliminated and a reproduced image with good resolution can be obtained.
第１図はこの発明の一実施例による赤外線検出装置の単
位画素の模式的断面図、
第２図は赤外線検出装置の模式的平面図、第３図は従来
の赤外線検出装置の単位画素の模式的断面図、
第４図は従来の赤外線検出装置の数画素を含む模式的断
面図、
第５図はこの発明の一実施例の赤外線検出装置の数画素
を含む模式的断面図である。
１．１５・・・受光部
２・・・・・垂直ＣＣＤレジスタ
３・・・・・トランスファゲート部
６・・・・・ｐ型シリコン基板
７・・・・・白金シリサイド層
９・・・・・反射膜
１０ａ 、１０ｂ ・・酸化膜
１１・・・・・トランスファゲート
１３・・・・・駆動ゲートFIG. 1 is a schematic sectional view of a unit pixel of an infrared detection device according to an embodiment of the present invention, FIG. 2 is a schematic plan view of the infrared detection device, and FIG. 3 is a schematic diagram of a unit pixel of a conventional infrared detection device. FIG. 4 is a schematic sectional view including several pixels of a conventional infrared detection device. FIG. 5 is a schematic sectional view including several pixels of an infrared detection device according to an embodiment of the present invention. 1.15... Light receiving section 2... Vertical CCD register 3... Transfer gate section 6... P-type silicon substrate 7... Platinum silicide layer 9... -Reflection films 10a, 10b...Oxide film 11...Transfer gate 13...Drive gate
Claims (1)
を有する画素が配列された裏面照射型赤外線検出装置に
おいて、画素表面全面に反射膜が設けられていることを
特徴とする赤外線検出装置。(1) In a back-illuminated infrared detection device in which pixels each having a light receiving section and a signal readout section are arranged on one main surface of a semiconductor substrate, an infrared detection device is characterized in that a reflective film is provided over the entire surface of the pixel. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61141332A JPS62299067A (en) | 1986-06-19 | 1986-06-19 | Infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61141332A JPS62299067A (en) | 1986-06-19 | 1986-06-19 | Infrared ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62299067A true JPS62299067A (en) | 1987-12-26 |
Family
ID=15289484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61141332A Pending JPS62299067A (en) | 1986-06-19 | 1986-06-19 | Infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62299067A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002033473A (en) * | 2000-07-17 | 2002-01-31 | Hamamatsu Photonics Kk | Semiconductor device |
| JP2006261372A (en) * | 2005-03-17 | 2006-09-28 | Sony Corp | Solid-state image sensing device, its manufacturing method and imaging device |
| JP2011151420A (en) * | 2011-04-25 | 2011-08-04 | Sony Corp | Solid-state image sensor, method of manufacturing the same, and imaging device |
| JP2011151421A (en) * | 2011-04-25 | 2011-08-04 | Sony Corp | Solid-state image sensor, method of manufacturing the same, and imaging device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956766A (en) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | Solid-state image pick-up sensor |
-
1986
- 1986-06-19 JP JP61141332A patent/JPS62299067A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956766A (en) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | Solid-state image pick-up sensor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002033473A (en) * | 2000-07-17 | 2002-01-31 | Hamamatsu Photonics Kk | Semiconductor device |
| JP2006261372A (en) * | 2005-03-17 | 2006-09-28 | Sony Corp | Solid-state image sensing device, its manufacturing method and imaging device |
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