JPS6173369A - Infrared detecting element - Google Patents
Infrared detecting elementInfo
- Publication number
- JPS6173369A JPS6173369A JP59196151A JP19615184A JPS6173369A JP S6173369 A JPS6173369 A JP S6173369A JP 59196151 A JP59196151 A JP 59196151A JP 19615184 A JP19615184 A JP 19615184A JP S6173369 A JPS6173369 A JP S6173369A
- Authority
- JP
- Japan
- Prior art keywords
- infrared rays
- substrate
- silicon substrate
- absorption layer
- crosstalk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 12
- 230000031700 light absorption Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 229910021339 platinum silicide Inorganic materials 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、一つのシリコン基板内に一次元または二次
元に配列形成された赤外線検出素子のクセ
ロス、トークを改嵜さ番る構造に関するものである０
〔従来の技術〕
第２図は従来の赤外線検出素子の構造の概略を示す断面
図で、図において、（１）はｐ形シリコン基板、（２）
は酸化シリコン層、（３）は垂直ノットレジスタのゲー
ト電極、（４）はトランスファトランジスタのゲート成
極、（５）は赤外線の光ル変換を行なうンヨット午−接
合の白金シリサイド電極、（６）はトランスファトラン
ジスタのソースとなるｎ形項域、（７）はショットキー
接合のガードリングと、溝成するｎ影領域、（８）は接
着剤、（９）はバノクージである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a structure in which infrared detecting elements are arranged one-dimensionally or two-dimensionally within a single silicon substrate, and which modify the xeros and talk. 0 [Prior Art] Figure 2 is a cross-sectional view schematically showing the structure of a conventional infrared detection element. In the figure, (1) is a p-type silicon substrate, (2)
is a silicon oxide layer, (3) is the gate electrode of the vertical knot resistor, (4) is the gate polarization of the transfer transistor, (5) is the platinum silicide electrode of the Nyoto junction that performs infrared light conversion, (6) is an n-type region which becomes the source of a transfer transistor, (7) is a guard ring of a Schottky junction and an n-shaded region forming a groove, (8) is an adhesive, and (9) is a vanocouge.
次にこのショットキー形赤外線検出素子の動作について
説明する。白金７リサイドａ ｔｉ （５）とｐ形シリ
コン基板（１）とのショットキー接合は、約０．２７ｅ
Ｖのショットキー接合バリヤ高さをもつが、このショッ
トキー接合に赤外−が入射すると成子、正孔対が生成さ
れ、／ヨツトキー接合バリヤを越えるエネルギーヲ待つ
正孔Ｖよ、ショットキー接合バリヤを越えてｐ形７リコ
／基板（１）に注入される。Next, the operation of this Schottky type infrared detection element will be explained. The Schottky junction between the platinum 7 reside a ti (5) and the p-type silicon substrate (1) is approximately 0.27e.
The Schottky junction barrier has a height of V, but when infrared light is incident on this Schottky junction, a positive hole pair is generated, and the hole V and the Schottky junction barrier are is injected into the p-type 7 lyco/substrate (1).
この結果、ショットキー接合の白金シリサイド電極（５
）には電子が蓄積されるが、この電子を読み出すことに
より入射量に応じた信号を得る。As a result, a Schottky junction platinum silicide electrode (5
), and by reading out these electrons, a signal corresponding to the amount of incidence can be obtained.
良く知られているように、白金ンリサイド電極（５）は
薄い方が検出感度が高く、通常１００Ａ以下の薄い膜で
形成されている。また、シリコンは１．ｌｅｖのバンド
ギャップを持ち、１．２μｍよシ長の赤外線に対しては
透明である。従って、入射した赤外線の一部は、薄い白
金７リサイド電極（５）とシリコン基板（１）とを透過
し、接着剤（８）との界面で反射する。赤外線検出素子
上に像を結ぶためのレンズに焦点距離ＦＩＯものを使用
すると最大入射角は、約２６．６’？になる。As is well known, the thinner the platinum silicide electrode (5), the higher the detection sensitivity, and it is usually formed of a thin film of 100A or less. Also, silicon is 1. It has a bandgap of Lev and is transparent to infrared rays with a length of 1.2 μm. Therefore, a part of the incident infrared rays passes through the thin platinum 7 reside electrode (5) and the silicon substrate (1), and is reflected at the interface with the adhesive (8). If a lens with a focal length of FIO is used to focus an image on the infrared detection element, the maximum angle of incidence is approximately 26.6'? become.
シリコン基板（１）は通常厚さ４００〜５００湘である
から反射光が隣接検出素子に入ってクロス、トークを生
じるのを避けるためには、検出素子の間隔を４００〜５
００湘とせねばならず、画素数の増加に大きな妨げとな
る。勿論クロス、トークがあれば鮮明な画像信号が得ら
れない。Since the silicon substrate (1) is usually 400 to 500 mm thick, in order to prevent reflected light from entering adjacent detection elements and causing cross and talk, the distance between the detection elements should be set at 400 to 50 mm.
The number of pixels must be set to 0.00, which greatly hinders the increase in the number of pixels. Of course, if there is cross or talk, a clear image signal cannot be obtained.
この発明は以上のような問題点を解決するためになされ
たもので隣接検出素子間のクロス、トークをなくし、画
素密度を向上でき、しかも鮮明な画像信号が得られる赤
外線検出素子を得ることを目的としている。This invention was made to solve the above-mentioned problems, and aims to provide an infrared detection element that can eliminate cross and talk between adjacent detection elements, improve pixel density, and provide a clear image signal. The purpose is
、〔問題点を解決するための手段〕
この発明に係る赤外線検出素子では、シリコン基板裏面
基板と接着剤との間に赤外線を吸収する光吸収層を設け
たものである。, [Means for Solving the Problems] In the infrared detection element according to the present invention, a light absorption layer that absorbs infrared rays is provided between the silicon substrate back substrate and the adhesive.
この発明では、シリコン基板と接着剤との間に赤外線を
吸収する光吸収層を設けたので、従来この界面で生じて
いた反射赤外線をなくすことができる。 “
〔実施例〕
第１図はこの発明の一実施例の構造の概略を示す断面図
で、前述の第２図に示した従来例と同一符号は同等部分
を示すもので、その説明は重複を避ける。図において、
αｑはシリコン基板（１）と接着剤（８）との間に設け
られ赤外線を吸収する光吸収層である０光吸収層四には
、例えば、住友３Ｍ社裂のベルベットコーティング、１
０１−Ｃ−１０、ブラックを用いればよい。In this invention, since a light absorption layer that absorbs infrared rays is provided between the silicon substrate and the adhesive, reflected infrared rays that conventionally occur at this interface can be eliminated. [Embodiment] Fig. 1 is a sectional view showing the outline of the structure of an embodiment of the present invention. The same reference numerals as in the conventional example shown in Fig. 2 above indicate the same parts, and the explanation thereof will not be repeated. Avoid.In the figure,
αq is a light absorption layer provided between the silicon substrate (1) and the adhesive (8) and absorbs infrared rays;
01-C-10, black may be used.
この実施例素子の動作原理は従来のものを同一であるが
、白金シリサイド電極（５）及びシリコン基板（１）を
透過した赤外線が、シリコン基板（１）の裏面に設けら
ｎた光吸収層ＱＱによって吸収きれるので、反射赤外線
はなくなり、隣接素子との間のクロストークが防止され
る。The operating principle of this example device is the same as that of the conventional device, but infrared rays transmitted through the platinum silicide electrode (5) and the silicon substrate (1) are absorbed by the light absorption layer provided on the back surface of the silicon substrate (1). Since it is completely absorbed by QQ, there is no reflected infrared rays, and crosstalk between adjacent elements is prevented.
なお、上記実施例では、金属シリサイド！他として、白
金シリサイド（ＰｔＳｉ）を用いたが、パラジよい。ま
た、基板はｐ形と限らず、ｎ形であってもよい。In addition, in the above example, metal silicide! As another example, platinum silicide (PtSi) was used, but it is good. Further, the substrate is not limited to p-type, and may be n-type.
以上のようにこの発明によれば、シリコン基板裏面での
赤外線反射を防止できるので、隣接検出素子との間のク
ロストークがなく、シたがって、画像のぼけがない。鮮
明な画像が得られる効果がある０As described above, according to the present invention, reflection of infrared rays on the back surface of the silicon substrate can be prevented, so there is no crosstalk between adjacent detection elements, and therefore, there is no blurring of the image. Effective for obtaining clear images0
第１図はこの発明の一実施例の概略構成を示す断面図、
第２図は従来の赤外線検出素子の概略構成を示す断面図
である。
図において、（１）はシリコン基板、（５）は金属シリ
サイド（白金７り丈イド）電極、α０ｒｉ光吸収層であ
る。
な嘔、各図中−−符号は同一または相当部分を示す。FIG. 1 is a sectional view showing a schematic configuration of an embodiment of the present invention;
FIG. 2 is a sectional view showing a schematic configuration of a conventional infrared detection element. In the figure, (1) is a silicon substrate, (5) is a metal silicide (platinum silicide) electrode, and an α0ri light absorption layer. In each figure, the reference numerals indicate the same or corresponding parts.
Claims (1)
接合を形成する複数個の金属または金属シリサイド電極
を一次元または二次元的に配置し、上記金属または金属
シリサイド電極側から赤外線を入射させるものにおいて
、上記シリコン基板の裏面に赤外線を吸収する光吸収層
を備えたことを特徴とする赤外線検出素子。(1) A device in which multiple metal or metal silicide electrodes forming Schottky junctions are arranged one-dimensionally or two-dimensionally on the surface of a common silicon substrate, and infrared rays are incident from the metal or metal silicide electrode side. An infrared detection element characterized in that a light absorption layer that absorbs infrared rays is provided on the back surface of the silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59196151A JPS6173369A (en) | 1984-09-17 | 1984-09-17 | Infrared detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59196151A JPS6173369A (en) | 1984-09-17 | 1984-09-17 | Infrared detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6173369A true JPS6173369A (en) | 1986-04-15 |
Family
ID=16353054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59196151A Pending JPS6173369A (en) | 1984-09-17 | 1984-09-17 | Infrared detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6173369A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63114165A (en) * | 1986-10-31 | 1988-05-19 | Nec Corp | Infrared image sensing device |
| JPH03268369A (en) * | 1990-03-16 | 1991-11-29 | Sharp Corp | Color sensor |
| US5804827A (en) * | 1995-10-27 | 1998-09-08 | Nikon Corporation | Infrared ray detection device and solid-state imaging apparatus |
| JP2014507784A (en) * | 2010-12-21 | 2014-03-27 | マックス−プランク−ゲゼルシャフト ツール フォーデルング デル ヴィッセンシャフテン エー．ヴェー． | Silicon photomultiplier tube whose optical crosstalk is suppressed by special characteristics of the substrate |
-
1984
- 1984-09-17 JP JP59196151A patent/JPS6173369A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63114165A (en) * | 1986-10-31 | 1988-05-19 | Nec Corp | Infrared image sensing device |
| JPH0563022B2 (en) * | 1986-10-31 | 1993-09-09 | Nippon Electric Co | |
| JPH03268369A (en) * | 1990-03-16 | 1991-11-29 | Sharp Corp | Color sensor |
| US5804827A (en) * | 1995-10-27 | 1998-09-08 | Nikon Corporation | Infrared ray detection device and solid-state imaging apparatus |
| JP2014507784A (en) * | 2010-12-21 | 2014-03-27 | マックス−プランク−ゲゼルシャフト ツール フォーデルング デル ヴィッセンシャフテン エー．ヴェー． | Silicon photomultiplier tube whose optical crosstalk is suppressed by special characteristics of the substrate |
| US9209329B2 (en) | 2010-12-21 | 2015-12-08 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Silicon photoelectric multiplier with optical cross-talk suppression due to properties of a substrate |
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