JPS62296139A - ケイ素原子含有スチレン係重合体 - Google Patents

ケイ素原子含有スチレン係重合体

Info

Publication number
JPS62296139A
JPS62296139A JP61140546A JP14054686A JPS62296139A JP S62296139 A JPS62296139 A JP S62296139A JP 61140546 A JP61140546 A JP 61140546A JP 14054686 A JP14054686 A JP 14054686A JP S62296139 A JPS62296139 A JP S62296139A
Authority
JP
Japan
Prior art keywords
resist
polymer
pattern
layer
molecular weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61140546A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055345B2 (enrdf_load_stackoverflow
Inventor
Kazuhide Saito
斉藤　和秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61140546A priority Critical patent/JPS62296139A/ja
Publication of JPS62296139A publication Critical patent/JPS62296139A/ja
Publication of JPH055345B2 publication Critical patent/JPH055345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP61140546A 1986-06-16 1986-06-16 ケイ素原子含有スチレン係重合体 Granted JPS62296139A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61140546A JPS62296139A (ja) 1986-06-16 1986-06-16 ケイ素原子含有スチレン係重合体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61140546A JPS62296139A (ja) 1986-06-16 1986-06-16 ケイ素原子含有スチレン係重合体

Publications (2)

Publication Number Publication Date
JPS62296139A true JPS62296139A (ja) 1987-12-23
JPH055345B2 JPH055345B2 (enrdf_load_stackoverflow) 1993-01-22

Family

ID=15271189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61140546A Granted JPS62296139A (ja) 1986-06-16 1986-06-16 ケイ素原子含有スチレン係重合体

Country Status (1)

Country Link
JP (1) JPS62296139A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026010A3 (en) * 2005-09-01 2007-06-14 Freescale Semiconductor Inc Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US7803719B2 (en) 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
JP2016044255A (ja) * 2014-08-25 2016-04-04 Jsr株式会社 共役ジエン系重合体及びその製造方法、重合体組成物、架橋重合体並びにタイヤ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026010A3 (en) * 2005-09-01 2007-06-14 Freescale Semiconductor Inc Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US7691756B2 (en) 2005-09-01 2010-04-06 Nxp B.V. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US7951729B2 (en) 2005-09-01 2011-05-31 Nxp B.V. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereor, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US7803719B2 (en) 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
JP2016044255A (ja) * 2014-08-25 2016-04-04 Jsr株式会社 共役ジエン系重合体及びその製造方法、重合体組成物、架橋重合体並びにタイヤ

Also Published As

Publication number Publication date
JPH055345B2 (enrdf_load_stackoverflow) 1993-01-22

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