JPS62296135A - Reduction stepper - Google Patents

Reduction stepper

Info

Publication number
JPS62296135A
JPS62296135A JP61140939A JP14093986A JPS62296135A JP S62296135 A JPS62296135 A JP S62296135A JP 61140939 A JP61140939 A JP 61140939A JP 14093986 A JP14093986 A JP 14093986A JP S62296135 A JPS62296135 A JP S62296135A
Authority
JP
Japan
Prior art keywords
lenses
vacuum
lens
base plate
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61140939A
Other languages
Japanese (ja)
Inventor
Yuji Hayashi
雄二 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP61140939A priority Critical patent/JPS62296135A/en
Publication of JPS62296135A publication Critical patent/JPS62296135A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Lens Barrels (AREA)
  • Projection-Type Copiers In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To project the image on a reticle on a base plate at an accurate magnification, by maintaining the spaces among reducing projection lenses in vacuum states so as to prevent the refractive indexes of the gaseous phases among the lenses from being changed. CONSTITUTION:Reducing projection lenses 3, 3... are set in a lens barrel 7 and vacuum packings 8 are fitted to the periphery of each lens so as to maintain the space between each lens in a vacuum state. When a ray of light (line g or i) for projection is made incident to the lenses 3, no temperature rise and pressure fluctuation take place and, accordingly variation of refractive indexes can be prevented in the spaces 4 among the lenses 3. Therefore, the rays of light is not bent as shown by the dotted line, but always projected on a semiconductor base plate 5 through the optical path shown by the solid line. Therefore, an image on a reticle 2 can be projected on the base plate 5 at an accurate magnification.

Description

【発明の詳細な説明】 ３、発明の詳細な説明 ［産業上の利用分野］ 本発明は半導体基板に集積回路の微細パターンを露光す
る縮小投影型露光装置、特に縮小投影レンズに関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a reduction projection type exposure apparatus for exposing a fine pattern of an integrated circuit onto a semiconductor substrate, and particularly to a reduction projection lens.

［従来の技術］ 従来、この種装置の縮小投影レンズは大気圧雰囲気中に
配置していた。[Prior Art] Conventionally, the reduction projection lens of this type of apparatus has been placed in an atmospheric pressure atmosphere.

［発明が解決しようとする問題点］ 上述した従来の縮小投影レンズを介してレチクル上の像
を投影する際、ｇ線又はｉ線などを照射することにより
レンズ間の気体相の屈折率が変化する為、半導体基板上
に投影される像の倍率が変化するという欠点がある。[Problems to be Solved by the Invention] When projecting an image on a reticle through the conventional reduction projection lens described above, the refractive index of the gas phase between the lenses changes by irradiating with g-line or i-line. Therefore, there is a drawback that the magnification of the image projected onto the semiconductor substrate changes.

本発明の目的は半導体基板上に正確な倍率でレチクル上
の像を投影する縮小投影型露光装置を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a reduction projection type exposure apparatus that projects an image on a reticle onto a semiconductor substrate at an accurate magnification.

［問題点を解決するための手段］ 本発明はレンズ間を真空に保持した縮小投影レンズを有
することを特徴とする縮小投影型露光装置である。[Means for Solving the Problems] The present invention is a reduction projection type exposure apparatus characterized by having a reduction projection lens in which a vacuum is maintained between the lenses.

［実施例］ 以下、本発明の一実施例を図により説明する。[Example] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第１図において、縮小投影レンズは複数種のレンズ３．
３・・・を組合せて構成される。In FIG. 1, the reduction projection lens is a plurality of types of lenses 3.
It is constructed by combining 3...

本発明はこれらのレンズ３，３・・・を鏡筒７内に組込
み、各レンズ３の周縁に真空パツキン８．を取付けてレ
ンズ間を気密にし、そのレンズ間を真空に保持したもの
である。In the present invention, these lenses 3, 3, . . . are assembled into a lens barrel 7, and a vacuum packing 8. The space between the lenses is made airtight by attaching the lens, and a vacuum is maintained between the lenses.

実施例において、光（ｇ線又はｉ線など）１がレチクル
２を通して縮小投影レンズ３に入って来る。この際縮小
レンズ３．３間の空間４が真空になっている為、縮小レ
ンズ間の空間４の温度上昇及び圧力変動等がなく、屈折
率も変わらない。その為光１は第１図の破線の様に曲げ
られることなく常に実線で示す光路を通ってＸＹステー
ジ６上の半導体基板５上に照射される。In the embodiment, light (such as g-line or i-line) 1 enters a reduction projection lens 3 through a reticle 2 . At this time, since the space 4 between the reduction lenses 3.3 is a vacuum, there is no temperature rise or pressure fluctuation in the space 4 between the reduction lenses, and the refractive index does not change. Therefore, the light 1 is not bent as shown by the broken line in FIG. 1, but always passes through the optical path shown by the solid line and is irradiated onto the semiconductor substrate 5 on the XY stage 6.

本発明によれば、実線で示す光路を通るから、誤差ΔＸ
を生じることがなく、正確な倍率でレチクル２上の像が
基板５上に投影される。According to the present invention, since the optical path passes through the solid line, the error ΔX
The image on the reticle 2 is projected onto the substrate 5 with accurate magnification without causing any distortion.

なお縮小投影レンズ内を真空に保つ方法として上記の実
施例では真空パツキン８を用いたが、常時真空ポンプで
真空に引く方式などの方式であっても、縮小投影レンズ
内を真空に保ってあれば同様の効果が得られる。Although the vacuum gasket 8 was used in the above embodiment as a method of keeping the inside of the reduction projection lens in a vacuum, even if a method such as a method of constantly drawing a vacuum with a vacuum pump is used, it is necessary to keep the inside of the reduction projection lens in a vacuum. A similar effect can be obtained.

［発明の効果］ 以上説明した様に本発明は縮小投影レンズ間の空間を真
空に保つことにより、光路が光による熱の影響で曲げら
れるのを防ぐことができ、その為縮小投影レンズの倍率
を一定に保つことができる効果がある。[Effects of the Invention] As explained above, the present invention can prevent the optical path from being bent due to the influence of heat from light by keeping the space between the reduction projection lenses in a vacuum, and therefore the magnification of the reduction projection lenses can be reduced. This has the effect of keeping it constant.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の実施例を示す構成図である。 FIG. 1 is a block diagram showing an embodiment of the present invention.

Claims (1)

【特許請求の範囲】[Claims] （１）縮小投影型露光装置において、レンズ間を真空に
保持した縮小投影レンズを有することを特徴とする縮小
投影型露光装置。(1) A reduction projection exposure apparatus characterized by having a reduction projection lens in which a vacuum is maintained between the lenses.
JP61140939A 1986-06-17 1986-06-17 Reduction stepper Pending JPS62296135A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61140939A JPS62296135A (en) 1986-06-17 1986-06-17 Reduction stepper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61140939A JPS62296135A (en) 1986-06-17 1986-06-17 Reduction stepper

Publications (1)

Publication Number Publication Date
JPS62296135A true JPS62296135A (en) 1987-12-23

Family

ID=15280328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61140939A Pending JPS62296135A (en) 1986-06-17 1986-06-17 Reduction stepper

Country Status (1)

Country Link
JP (1) JPS62296135A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0844532A2 (en) * 1996-11-25 1998-05-27 Nikon Corporation Exposure apparatus
US6714278B2 (en) 1996-11-25 2004-03-30 Nikon Corporation Exposure apparatus
KR100668818B1 (en) * 2001-06-15 2007-01-17 주식회사 하이닉스반도체 Exposure apparatus for semiconductor manufacture comprising reduction projection lens system with interference filter for phase shift

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60120342A (en) * 1983-12-02 1985-06-27 Nippon Kogaku Kk <Nikon> Optical projecting device
JPS60159748A (en) * 1984-01-30 1985-08-21 Nippon Kogaku Kk <Nikon> Projection exposing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60120342A (en) * 1983-12-02 1985-06-27 Nippon Kogaku Kk <Nikon> Optical projecting device
JPS60159748A (en) * 1984-01-30 1985-08-21 Nippon Kogaku Kk <Nikon> Projection exposing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0844532A2 (en) * 1996-11-25 1998-05-27 Nikon Corporation Exposure apparatus
EP0844532A3 (en) * 1996-11-25 1999-08-18 Nikon Corporation Exposure apparatus
US6714278B2 (en) 1996-11-25 2004-03-30 Nikon Corporation Exposure apparatus
KR100668818B1 (en) * 2001-06-15 2007-01-17 주식회사 하이닉스반도체 Exposure apparatus for semiconductor manufacture comprising reduction projection lens system with interference filter for phase shift

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