JPS62293618A - Processing of silicon substrate - Google Patents
Processing of silicon substrateInfo
- Publication number
- JPS62293618A JPS62293618A JP13738086A JP13738086A JPS62293618A JP S62293618 A JPS62293618 A JP S62293618A JP 13738086 A JP13738086 A JP 13738086A JP 13738086 A JP13738086 A JP 13738086A JP S62293618 A JPS62293618 A JP S62293618A
- Authority
- JP
- Japan
- Prior art keywords
- hydrofluoric acid
- substrate
- silicon substrate
- oxide film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 76
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000010419 fine particle Substances 0.000 abstract description 7
- 239000000243 solution Substances 0.000 abstract description 7
- 239000004809 Teflon Substances 0.000 abstract description 3
- 229920006362 Teflon® Polymers 0.000 abstract description 3
- 239000007864 aqueous solution Substances 0.000 abstract description 3
- 230000005587 bubbling Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010306 acid treatment Methods 0.000 description 13
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明はシリコン基板の処理方法に関し、特に弗化水素
酸あるいは弗化水素酸を含む溶液を用いたシリコン酸化
膜の除去（以下弗化水素酸処理と呼ぶ）に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Industrial Field of Application] The present invention relates to a method for processing a silicon substrate, and in particular to a method for processing a silicon oxide film using hydrofluoric acid or a solution containing hydrofluoric acid. (hereinafter referred to as hydrofluoric acid treatment).
従来、この種のシリコン酸化膜の除去方法としては、第
２図に示すように、弗化水素酸あるいは弗化水素酸を含
む溶液を満たした弗化水素酸処理槽８中にシリコン基板
７を潰し酸化膜を完全に除去し、その後、シリコン基板
７を弗化水素酸処理槽８より取り出し、シャワ一槽９に
移す。ここでシャワーノズル１０よシ純水を噴出し、シ
リコン基板上の弗化水素酸などを完全に除去する方法を
とっている。Conventionally, as a method for removing this type of silicon oxide film, as shown in FIG. 2, a silicon substrate 7 is placed in a hydrofluoric acid treatment bath 8 filled with hydrofluoric acid or a solution containing hydrofluoric acid. After the crushed oxide film is completely removed, the silicon substrate 7 is taken out from the hydrofluoric acid treatment tank 8 and transferred to a shower tank 9. Here, pure water is jetted out from the shower nozzle 10 to completely remove hydrofluoric acid and the like on the silicon substrate.
上述した従来のシリコン基板の処理方法においては、弗
化水素酸あるめは弗化水素酸を含む溶液によシリコン基
板上のシリコン酸化膜を除去した後に、弗化水素酸処理
槽からシリコン基板を取り出す時にシリコン基板表面に
空気中の炭化水素や微粒子が吸着するという欠点がある
。In the conventional silicon substrate processing method described above, after removing the silicon oxide film on the silicon substrate with a solution containing hydrofluoric acid, the silicon substrate is removed from the hydrofluoric acid treatment tank. There is a drawback that hydrocarbons and fine particles in the air are adsorbed onto the surface of the silicon substrate when it is taken out.
本発明の目的は上記の欠点を除去し、シリコン酸化膜を
除去した後、空気中に取り出すことをなくすることによ
シ、炭化水素や微粒子の吸着されない清浄な保護酸化膜
の形成されたシリコン基板を提供することにある。The purpose of the present invention is to eliminate the above-mentioned drawbacks and to eliminate the need to take out the silicon oxide film into the air after removing it, thereby producing silicon with a clean protective oxide film that does not attract hydrocarbons or fine particles. The purpose is to provide the substrate.
本発明のシリコン基板の処理方法は、弗化水素酸あるい
は弗化水素酸を含む溶液による処理の後、シリコン基板
を弗化水素酸処理槽から取り出すことなく、純水で弗化
水素酸などをオー−（フロー置換する工程と純水中に酸
素あるいはオゾンをバブリングしてシリコン基板表面に
清浄な保護酸化膜を形成する工程とを有している。In the method for treating a silicon substrate of the present invention, after treatment with hydrofluoric acid or a solution containing hydrofluoric acid, the silicon substrate is treated with hydrofluoric acid or the like using pure water without taking the silicon substrate out of the hydrofluoric acid treatment tank. The method includes a step of replacing the O-(flow) and a step of bubbling oxygen or ozone into pure water to form a clean protective oxide film on the surface of the silicon substrate.
以上の工程によシ、弗化水素酸処理によりシリコン酸化
膜が除去されてシリコン表面が露出し、活性なシリコン
表面のダングリング争ホントにより、空気中の炭化水素
や微粒子が吸着されると考えられる原因を除去し、清浄
な保護酸化膜が形成される。Through the above process, the silicon oxide film is removed by the hydrofluoric acid treatment, exposing the silicon surface, and hydrocarbons and fine particles in the air are thought to be adsorbed due to the dangling competition of the active silicon surface. A clean protective oxide film is formed.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明による処理方法の一実施例の模式図であ
る。先ず弗化水素酸処理を施こそうとするシリコン基板
１を、弗化水素酸あるいは弗化水素酸を含む水溶液を満
たし友邦化水素酸処理槽２の中に浸し、シリコン酸化膜
を除去する。シリコン酸化膜が完全に除去された後に、
純水供給パルプ３を開きオーバフロー水洗を行々う。弗
化水素酸溶液が完全に純水で置換された後、テフロン製
バブラ４より酸素あるいはオゾンをバブリングする。酸
素あるいはオゾンの効果によシ、シリコン基板１の表面
に清浄な薄い保護酸化膜が形成された時点で、シリコン
基板１を弗化水素酸処理槽２よシ取）出しシャワ一槽５
に移す。シャワ一槽５においてシャワーノズル６よシ純
水を噴射し、シリコン基板上の弗化水素酸などを完全に
除去する。FIG. 1 is a schematic diagram of an embodiment of the treatment method according to the present invention. First, a silicon substrate 1 to be subjected to hydrofluoric acid treatment is immersed in a hydrofluoric acid treatment tank 2 filled with hydrofluoric acid or an aqueous solution containing hydrofluoric acid to remove the silicon oxide film. After the silicon oxide film is completely removed,
Open the pure water supply pulp 3 and perform overflow washing. After the hydrofluoric acid solution is completely replaced with pure water, oxygen or ozone is bubbled through a bubbler 4 made of Teflon. When a clean thin protective oxide film is formed on the surface of the silicon substrate 1 due to the effect of oxygen or ozone, the silicon substrate 1 is removed from the hydrofluoric acid treatment bath 2) and placed in the shower bath 5.
Move to. Pure water is sprayed through a shower nozzle 6 in a shower tank 5 to completely remove hydrofluoric acid and the like on the silicon substrate.
本発明による処理方法においては、弗化水素酸処理槽２
からシャワ一槽５ヘシリコン基板１を移す時に、シリコ
ン基板上に保護酸化膜が形成されているため、空気中の
炭化水素および微粒子のシリコン基板上への吸着を防ぐ
ことができる。In the treatment method according to the present invention, the hydrofluoric acid treatment tank 2
Since a protective oxide film is formed on the silicon substrate when the silicon substrate 1 is transferred from the shower to the shower tub 5, adsorption of hydrocarbons and fine particles in the air onto the silicon substrate can be prevented.
本発明による処理方法を用いることにより、従来技術に
よる処理方法に比べ、シリコン基板上の直径０．３μｍ
以上の微粒子数をｌ／１０以下に抑えることができた。By using the processing method according to the present invention, a diameter of 0.3 μm on a silicon substrate can be reduced compared to the processing method using the conventional technology.
The number of fine particles above could be suppressed to 1/10 or less.
以上説明したように本発明は、シリコン基板の弗化水素
酸処理においてシリコン酸化膜の除去の後、弗化水素酸
あるいは弗化水素酸溶液を純水でオーバフロー置換し、
酸素あるいはオゾンをバブリングすることにより弗化水
素酸処理槽内においてシリコン基板上に清浄な薄い保護
酸化膜を形成′することができて、炭化水素および微粒
子の少ないシリコン基板を得ることができる。As explained above, in the present invention, after removing a silicon oxide film in hydrofluoric acid treatment of a silicon substrate, overflow replacement of hydrofluoric acid or a hydrofluoric acid solution with pure water,
By bubbling oxygen or ozone, a clean thin protective oxide film can be formed on a silicon substrate in a hydrofluoric acid treatment bath, and a silicon substrate with less hydrocarbons and fine particles can be obtained.
第１図は本発明のシリコン基板の処理方法の一実施例の
模式図、第２図は従来技術による処理方法の実施例の模
式図である。
１．７・・・・・・シリコン基板、ａ８・・・・・・弗
化水素酸処理槽、３・・・・・・純水供給バルブ、４・
・・・・・テフロン製バブラ、５，９・・・・・・シャ
ワ一槽、６，１０・・・・・・シャワーノズル。
代理人 弁理士 内 原 １ ゛″目FIG. 1 is a schematic diagram of an embodiment of the silicon substrate processing method of the present invention, and FIG. 2 is a schematic diagram of an embodiment of the conventional processing method. 1.7...Silicon substrate, a8...Hydrofluoric acid treatment tank, 3...Pure water supply valve, 4.
...Teflon bubbler, 5,9...shower tub, 6,10...shower nozzle. Agent Patent Attorney Uchihara 1st
Claims (1)
は弗化水素酸を含む溶液中で除去する処理において、弗
化水素酸あるいは弗化水素酸を含む溶液中でシリコン酸
化膜を除去した後、このシリコン基板をシリコン酸化膜
の除去用の処理槽から取り出すことなくオーバフロー水
洗を行ない弗化水素酸を純水と置換する工程と、その後
酸素あるいはオゾンをバブリングしてシリコン基板上に
清浄な保護酸化膜を形成する工程とを含むことを特徴と
するシリコン基板の処理方法。In the process of removing a silicon oxide film on a silicon substrate in hydrofluoric acid or a solution containing hydrofluoric acid, after removing the silicon oxide film in hydrofluoric acid or a solution containing hydrofluoric acid, The silicon substrate is washed with overflow water without taking it out of the processing bath for removing the silicon oxide film, and the hydrofluoric acid is replaced with pure water. After that, oxygen or ozone is bubbled to form a clean protective oxidation layer on the silicon substrate. 1. A method for processing a silicon substrate, comprising the step of forming a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13738086A JPS62293618A (en) | 1986-06-12 | 1986-06-12 | Processing of silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13738086A JPS62293618A (en) | 1986-06-12 | 1986-06-12 | Processing of silicon substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62293618A true JPS62293618A (en) | 1987-12-21 |
Family
ID=15197331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13738086A Pending JPS62293618A (en) | 1986-06-12 | 1986-06-12 | Processing of silicon substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62293618A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002176025A (en) * | 2000-12-11 | 2002-06-21 | Mitsubishi Electric Corp | Semiconductor substrate cleaning device and method of cleaning semiconductor substrate using it |
-
1986
- 1986-06-12 JP JP13738086A patent/JPS62293618A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002176025A (en) * | 2000-12-11 | 2002-06-21 | Mitsubishi Electric Corp | Semiconductor substrate cleaning device and method of cleaning semiconductor substrate using it |
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