JPS61112326A - Method of treating semiconductor substrate - Google Patents
Method of treating semiconductor substrateInfo
- Publication number
- JPS61112326A JPS61112326A JP23451384A JP23451384A JPS61112326A JP S61112326 A JPS61112326 A JP S61112326A JP 23451384 A JP23451384 A JP 23451384A JP 23451384 A JP23451384 A JP 23451384A JP S61112326 A JPS61112326 A JP S61112326A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- hydrofluoric acid
- hydrogen peroxide
- ultrasonic waves
- foreign matters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Abstract
Description
【発明の詳細な説明】
ｌａ）発明の技術分野
本発明は、シリコン基板の洗浄方法、特に弗酸あるいは
希弗酸処理後に清浄なシリコン基板を得ることのできる
、シリコン基板の処理方法Ｋ ＩＪ、ｌする。Detailed Description of the Invention la) Technical Field of the Invention The present invention relates to a silicon substrate cleaning method, particularly a silicon substrate processing method K IJ that can obtain a clean silicon substrate after treatment with hydrofluoric acid or dilute hydrofluoric acid. I do it.
（ｂ）従来技術
は希弗酸による処理工程が多用されている。しかし、従
来の方法では、弗酸あるいは希弗酸処理を行なったシリ
コン基板は、水洗後主にスピン・ドライ法によって乾燥
されている。弗酸処理によってシリコン酸化膜が除去さ
れ、単結晶面が露出したシリコン基板では、基板表面が
非常Ｋｌ’＆性化される。この活性化した基板表面は異
物を吸着しやすく、処理槽内や水洗用の純水中に異物が
あれば直ちＫこの異物はシリコン基板表面に吸着される
。(b) In the prior art, a treatment step using dilute hydrofluoric acid is often used. However, in the conventional method, a silicon substrate treated with hydrofluoric acid or diluted hydrofluoric acid is dried mainly by a spin dry method after washing with water. In a silicon substrate where the silicon oxide film is removed by hydrofluoric acid treatment and the single crystal plane is exposed, the substrate surface becomes extremely Kl'&. This activated substrate surface easily adsorbs foreign matter, and if there is any foreign matter in the processing tank or in the pure water for washing, the foreign matter is immediately adsorbed onto the silicon substrate surface.
またスピン・ドライ法では高速回転によって異物が巻き
上げられ、それがシリコン基板表面に付着する。In addition, in the spin-dry method, foreign matter is rolled up by high-speed rotation and adheres to the surface of the silicon substrate.
一方、シリコン基板表面への異物の吸着に関してはζ−
電位と呼ばれる界面電位が大きく影響すると言われてい
る。このζ−電位に基づく基板表面−異物間の力は洗浄
液のＰＨによって大きく異なり、一般にＰＨが小さい（
酸性）のときには吸引力が働き、ＰＨが大きい（アルカ
リ性）のときは反撥力が働く、シたがって、シリコン基
板に弗表面に異物が付着しやすくなる。このとき付着し
た異物はその後の水洗処理によりても容易には取り除く
ことができず、シリコン基板表面に残る。On the other hand, regarding the adsorption of foreign substances to the silicon substrate surface, ζ−
It is said that the interfacial potential, called electrical potential, has a major influence. The force between the substrate surface and the foreign object based on this ζ-potential varies greatly depending on the pH of the cleaning solution, and generally the pH is small (
When the pH is high (acidic), a suction force acts, and when the pH is high (alkaline), a repulsive force acts; therefore, foreign matter tends to adhere to the surface of the silicon substrate. The foreign matter attached at this time cannot be easily removed even by subsequent water washing treatment and remains on the silicon substrate surface.
近年の超ＬＳＩと呼ばれる半導体装置の製造過程では線
幅１μｍ程度の加工技術が要求される。この場合、粒子
径０．１μｍ程度の異物の付着は、パターン形成時に悪
影響を与え、半導体素子の特性の劣化や歩留シの低下を
も九らす原因となる。In recent years, the manufacturing process of semiconductor devices called VLSIs requires processing technology for line widths of about 1 μm. In this case, the adhesion of foreign matter with a particle size of about 0.1 μm has an adverse effect on pattern formation, causing deterioration of the characteristics of the semiconductor element and a reduction in yield.
（Ｃ）発明の目的
本発明の目的は上記欠点を取り除き、異物の付着がなく
、清浄なシリコン基板を得ることができる、シリコン基
板の処理方法を提供することである。(C) Purpose of the Invention The purpose of the present invention is to provide a method for processing a silicon substrate, which eliminates the above-mentioned drawbacks and can obtain a clean silicon substrate free from adhesion of foreign matter.
（ｄ）発明の構成一手段
本発明の半導体基板の処理方法は、弗酸あるいは希弗酸
処理を施したシリコン基板を過酸化水素を含む有機アル
カリ溶液に浸漬し、超音波による洗浄を施した後、該シ
リコン基板を蒸気法によって乾燥することを特徴とする
。(d) One means of constituting the invention The method for processing a semiconductor substrate of the present invention is to immerse a silicon substrate treated with hydrofluoric acid or dilute hydrofluoric acid in an organic alkaline solution containing hydrogen peroxide, and then perform ultrasonic cleaning. After that, the silicon substrate is dried by a steam method.
＋り発明の実施例
以下、第１図を用いて本発明の実施例について説明する
。Embodiments of the Invention Below, embodiments of the present invention will be described with reference to FIG.
まず、弗酸あるいは希弗酸処理を行なったクリコン基板
を処理槽１において過酸化水素を含む有機アルカリ溶液
に浸漬する。同時に超音波を併用する。この時、弗酸あ
るいは希弗酸処理によってシリコン基板表面に付層して
いた異物は、基板から反撥力を受けると同時罠、超音波
の働きによってシリコン基板表面から遊離される。それ
と同時に、シリコン基板表面には、溶液中の過酸化水素
の酸化作用によって、極めて薄い清浄な自然酸化膜が形
成される。この自然酸化膜は、シリコン基板表面を保饅
し、これ以後のシリコン基板表面への異物の吸着を妨げ
る働きをする。First, a Cricon substrate treated with hydrofluoric acid or diluted hydrofluoric acid is immersed in an organic alkaline solution containing hydrogen peroxide in a treatment tank 1. Use ultrasound at the same time. At this time, foreign matter that has been deposited on the silicon substrate surface by hydrofluoric acid or dilute hydrofluoric acid treatment is simultaneously trapped and released from the silicon substrate surface by the action of ultrasonic waves when it receives a repulsive force from the substrate. At the same time, an extremely thin and clean natural oxide film is formed on the silicon substrate surface by the oxidizing action of hydrogen peroxide in the solution. This natural oxide film protects the silicon substrate surface and serves to prevent foreign matter from adsorbing to the silicon substrate surface thereafter.
処理に用いられた有機アルカリ？ｉ￥液は処理終了後直
ちにドレイン管２を通して処理槽１から排出される。こ
の溶液中の過酸化水素濃度は上記シリ゛１コン基板の処
理によって低くなっているため、補助タンク３から定期
的に過酸化水素が補給される。Organic alkali used in treatment? Immediately after the processing is completed, the i-liquid is discharged from the processing tank 1 through the drain pipe 2. Since the concentration of hydrogen peroxide in this solution has been lowered due to the processing of the silicon substrate, hydrogen peroxide is periodically replenished from the auxiliary tank 3.
過酸化水素が補給された溶液は０．１μｍのフィルター
４を通して再び処理槽ＩＫ供給される。この時、溶液は
ポンプ５によって汲み上げられる。このようＫして、処
理槽内の溶液は常に清浄な状態に保たれる。The solution supplemented with hydrogen peroxide passes through a 0.1 μm filter 4 and is supplied to the processing tank IK again. At this time, the solution is pumped up by pump 5. In this manner, the solution in the processing tank is always kept in a clean state.
上記処理を終えたシリコン基板は直ちに水洗槽６に移さ
れ、純水によりて５分以上流水あるいはスプレー水洗さ
れる。The silicon substrate that has undergone the above treatment is immediately transferred to the washing tank 6 and washed with pure water for 5 minutes or more by running water or spraying water.
次に、水洗処理を終えたシリコン基板は蒸気乾燥処理槽
７で蒸気乾燥される。この処理槽７は、乾燥用蒸気を発
生させるためのヒーター８と凝集用の冷却器９を備えて
いる。凝集された薬液は処理槽内に戻るが、水を含んで
いるため、乾燥処理後この水を含んだ薬液はドレイン管
１０を通して回収槽１１に回収され、水と分離される。Next, the silicon substrate that has been washed with water is steam-dried in a steam-drying treatment tank 7. This processing tank 7 is equipped with a heater 8 for generating drying steam and a cooler 9 for aggregation. The aggregated chemical solution returns to the processing tank, but since it contains water, after the drying process, the water-containing chemical solution is collected into the recovery tank 11 through the drain pipe 10 and separated from the water.
回収槽１１で水と分離された薬液はポンプ１２によって
汲み上げられ、０．１μｍのフィルター１３を通して処
理槽７に供給される。The chemical solution separated from water in the recovery tank 11 is pumped up by a pump 12 and supplied to the processing tank 7 through a 0.1 μm filter 13.
従って、処理槽７内の薬液には異物の混入がなく、乾燥
後のシリコン基板への異物の付着もない。Therefore, there is no foreign matter mixed into the chemical solution in the processing tank 7, and there is no foreign matter adhering to the silicon substrate after drying.
従来法の弗酸処理後水洗、スピンドライによれば、例え
ば直径５インチのシリコン基板上に付着する０、５μｍ
以上の異物の数が５００〜１０００個であったのが、本
発明によれば約５０個であった。According to the conventional method of hydrofluoric acid treatment followed by water washing and spin drying, for example, a 0.5 μm film deposited on a 5 inch diameter silicon substrate
The number of foreign particles was 500 to 1000, but according to the present invention, the number was about 50.
以上詳細に説明したように１本発明（よれば、異物の付
着がなく、清浄なシリコン基板を得ることができる、シ
リコン基板の処理方法を提供することができる。As described above in detail, according to the present invention, it is possible to provide a method for processing a silicon substrate, which can obtain a clean silicon substrate without adhesion of foreign matter.
第１図は本発明の実施例を示すブロック図である。
図において、１・・・・・・処理槽、２・・・・・・ド
レイン管、３・・・・・・補助タンク、４・・・・・・
フィルター、５・・・・・・ポンプ、６・・・・・・水
洗槽、７・・・・・・蒸気乾燥処理槽、８・・・・・・
ヒーター、９・・・・・・冷却器、ｌｏ・旧・・ドレイ
ン管、１１・・・・・・回収槽、１２・・・・・・ポン
プ、１３・・・・・・フィルター。
墾１
図FIG. 1 is a block diagram showing an embodiment of the present invention. In the figure, 1... treatment tank, 2... drain pipe, 3... auxiliary tank, 4...
Filter, 5... Pump, 6... Washing tank, 7... Steam drying treatment tank, 8...
Heater, 9...Cooler, LO/old...Drain pipe, 11...Recovery tank, 12...Pump, 13...Filter. Figure 1
Claims (1)
化水素を含む有機アルカリ溶液に浸漬し、超音波によっ
て洗浄する工程と、該シリコン基板を蒸気法によって乾
燥する工程とを含むことを特徴とする半導体基板の処理
方法。It is characterized by comprising the steps of: immersing a silicon substrate treated with hydrofluoric acid or dilute hydrofluoric acid in an organic alkaline solution containing hydrogen peroxide and cleaning it with ultrasonic waves; and drying the silicon substrate using a steam method. A method for processing semiconductor substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23451384A JPS61112326A (en) | 1984-11-07 | 1984-11-07 | Method of treating semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23451384A JPS61112326A (en) | 1984-11-07 | 1984-11-07 | Method of treating semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61112326A true JPS61112326A (en) | 1986-05-30 |
Family
ID=16972199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23451384A Pending JPS61112326A (en) | 1984-11-07 | 1984-11-07 | Method of treating semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61112326A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1101058C (en) * | 1997-04-28 | 2003-02-05 | 三菱电机株式会社 | Method and apparatus for wet treatment of semiconductor wafer |
-
1984
- 1984-11-07 JP JP23451384A patent/JPS61112326A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1101058C (en) * | 1997-04-28 | 2003-02-05 | 三菱电机株式会社 | Method and apparatus for wet treatment of semiconductor wafer |
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