JPS62291169A - Ccd image sensor - Google Patents

Ccd image sensor

Info

Publication number
JPS62291169A
JPS62291169A JP61136658A JP13665886A JPS62291169A JP S62291169 A JPS62291169 A JP S62291169A JP 61136658 A JP61136658 A JP 61136658A JP 13665886 A JP13665886 A JP 13665886A JP S62291169 A JPS62291169 A JP S62291169A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
sets
image sensor
rows
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61136658A
Other languages
Japanese (ja)
Inventor
Akira Togashi
明 富樫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61136658A priority Critical patent/JPS62291169A/en
Publication of JPS62291169A publication Critical patent/JPS62291169A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14825Linear CCD imagers

Abstract

PURPOSE:To enhance the sensitivity and the high speed of a CCD image sensor by forming two sets of CCD line sensors ON-hips. CONSTITUTION:Two sets of single channel type CCD line sensors having photoelectric converter rows 1-1, 1-2 in which photoelectric converters are disposed in one row at a predetermined interval, shift registers 2-1, 2-2 for receiving charge from the converters to transfer the charge, and transfer gates 3-1, 3-2 provided between the rows 1-1, 1-2 and the registers 2-1, 2-2 are disposed in a plane symmetrical position in parallel to be integrated on a semiconductor substrate. The symmetrical plane is a surface passing perpendicularly to the sheet in the center of the rows 1-1, 1-2 in the drawing, the two sets of the sensors are disposed symmetrically with respect to the symmetrical surface in a mirror-reflecting relationship. Thus, the reading velocity can be accelerated and the sensitivity can be enhanced.

Description

【発明の詳細な説明】 発明の詳細な説明 (産業上の利用分野〕 本発明はCCDイメージセンサに関し、特にCCDリニ
アイメージセンサに関する。
Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a CCD image sensor, and particularly to a CCD linear image sensor.

1′従来の技術J 従来、CCDリニアイメージセンサは第3図に示す様に
光電変換素子列1と、その両側にそれぞれ配置されたシ
フトレジスタ2a、2bとを有する構成を有していた。
1' Prior Art J Conventionally, as shown in FIG. 3, a CCD linear image sensor has a configuration including a photoelectric conversion element array 1 and shift registers 2a and 2b arranged on both sides of the array.

第3図において破線で描いた矢印は電荷の転送方向を示
すものである。
In FIG. 3, arrows drawn with broken lines indicate the direction of charge transfer.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のCCDリニアイメージセンサは、光電変
換素子列が一つしかなく、従って例えば映像信号の読取
りを解像度を下げずにカラー化する場合等は同じイメー
ジセンサを複数個用意し、光学系を通過した光をハーフ
ミラ−等で分けてそれぞれのセンサで読取るなどの手段
が用いられる。しかしこの場合には、それぞれのセンサ
の位置を高精度で調整しなければならず、また光量も分
けられた分減衰するので、より強力な光源が必要となり
、全体としてコストの増大及び装置の大型化を招くとい
う欠点がある。
The conventional CCD linear image sensor described above has only one photoelectric conversion element array, so if, for example, you want to read a video signal in color without lowering the resolution, you need to prepare multiple identical image sensors and change the optical system. A method is used, such as dividing the passed light using a half mirror or the like and reading it with each sensor. However, in this case, the position of each sensor must be adjusted with high precision, and the amount of light is attenuated as it is divided, so a more powerful light source is required, resulting in increased costs and larger equipment. The disadvantage is that it leads to

又、一つの光電変換素子列で順次読み取っていくので、
読み取り速度が遅い若しくは光感度が低いというX点が
ある。
Also, since it is read sequentially with one photoelectric conversion element row,
There is a point X where the reading speed is slow or the photosensitivity is low.

本発明の目的は、2つの映像信号を発生し得るCCDイ
メージセンサを提供することにある。
An object of the present invention is to provide a CCD image sensor that can generate two video signals.

本発明の他の目的は、高感度若しくは高速動作可能なC
CDイメージセンサを提供することにある。
Another object of the present invention is to provide a C
The purpose of the present invention is to provide a CD image sensor.

〔問題点を解決するための手段〕[Means for solving problems]

本発明のCCDイメージセンサは、光電変換素子を所定
の間隔で一列に配置j−た光電変換素子列、前記光電変
換素子から電荷を受取って転送するシフトレジスタ及び
前記光電変換素子列と前記シフトレジスタの間に設けら
れた転送ゲートを備えたシングルチャネル型CCDライ
ンセンサが2組互いに平行に面対称の位置に配置されて
半導体基板に集積されているものである。
The CCD image sensor of the present invention includes a photoelectric conversion element array in which photoelectric conversion elements are arranged in a line at predetermined intervals, a shift register that receives and transfers charges from the photoelectric conversion elements, and the photoelectric conversion element array and the shift register. Two sets of single channel type CCD line sensors each having a transfer gate provided between the two are arranged parallel to each other in plane symmetrical positions and integrated on a semiconductor substrate.

〔実施例] 次に、本発明の実施例について図面を参照して説明する
[Example] Next, an example of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例の主要部を示すブロック図、
第2図は本発明の一実施例における光電変換素子の配置
関係を示す平面模式図である。
FIG. 1 is a block diagram showing the main parts of an embodiment of the present invention;
FIG. 2 is a schematic plan view showing the arrangement of photoelectric conversion elements in one embodiment of the present invention.

この実施例は、光電変換素子を所定の間隔で一列に配置
した光電変換素子列1−1 (又は1−2)、光電変換
素子から電荷を受取って転送するシフトレジスタ2−1
 (又は2−2)及び光電変換素子一列1−オ (又は
1−2)とシフトレジスタ2−1 (又は2−2)の間
に設けられた転送ゲート3+(又は3−2)を備えたシ
ングルチャネル型CCDラインセンサが2組互いに平行
に面対称の位置に配置されて半導体基板に集積されてい
るものである。
This embodiment includes a photoelectric conversion element array 1-1 (or 1-2) in which photoelectric conversion elements are arranged in a line at predetermined intervals, and a shift register 2-1 that receives and transfers charges from the photoelectric conversion elements.
(or 2-2) and a transfer gate 3+ (or 3-2) provided between one row of photoelectric conversion elements 1-O (or 1-2) and the shift register 2-1 (or 2-2). Two sets of single-channel type CCD line sensors are arranged parallel to each other in plane-symmetrical positions and integrated on a semiconductor substrate.

対称面は第1図において光電変換素子列1−!。The plane of symmetry is the photoelectric conversion element row 1-! in FIG. .

1−2の真中を紙面に垂直に通る面である。この対称面
に対して2組のCCDラインセンサは互いに対称に配置
されている。言い換えると互いに鏡映関係にある。
This is a plane that passes through the middle of 1-2 perpendicularly to the plane of the paper. The two sets of CCD line sensors are arranged symmetrically with respect to this plane of symmetry. In other words, they are mirror images of each other.

水平解像度は光電変換素子列1−1又は1−2の光電変
換素子のピッチ、つまり列方向ピッチaの逆数に比例す
る。
The horizontal resolution is proportional to the pitch of the photoelectric conversion elements in the photoelectric conversion element row 1-1 or 1-2, that is, the reciprocal of the column direction pitch a.

次に、この実施例の使用方法について説明する。Next, how to use this embodiment will be explained.

先ず第1に、同一対象(例えば読み取り原稿の同一列)
からの反射光を光学系で2系統に分離して光電変換素子
列1.1.12にそれぞれ入射させればカラー化が可能
である。この場合は、2つのCCDリニアイメージセン
サを使用するのと原理的には同じであるが、原稿読み取
り装置の全体が小型化できる。
First of all, the same object (for example, the same column of the read original)
If the reflected light is separated into two systems by an optical system and incident on the photoelectric conversion element arrays 1, 1, and 12, colorization is possible. In this case, although the principle is the same as using two CCD linear image sensors, the entire document reading device can be made smaller.

第2に、隣接する2対象からの反射光をそれぞれ光電変
換素子列1−1及び1−2に入射させて使用できる。こ
の場合は、垂直方向の機械的走査の間隔をCCDライン
センサの場合の2倍にできる。この場合の垂直解像度は
、光電変換素子配列の行方向ピッチに逆比例する。例え
ば、ファクシミリの原稿読取りに使用する場合、必要と
される解像度が水平(CCDセンサによる電気的走査方
向)、垂直(機械系による原稿おくり方向)とも8do
t/mmのときに列方向ピッチaが10μmのものなら
ば行方向ピッチbも10μmにすればよい。水平8do
t/龍、垂直4 dot/關ならばその比は垂直/水平
−4/8=1./2 となるので、b / a = 2とすればよい。ゆえに
列方向ピッチaが10μmとした場合、行方向ピッチb
は20μmである。このように構成することにより、垂
直方向の機械的走査ピッチとセンサ上の2列の行方向ピ
ッチbとが光学的縮小を通して一致するので、外部回路
で走査方向に対して進んんでいる方のセンサ出力を1走
査線分の時間メモリなどを用いて遅延させるだけで、2
個の従来タイプのセンサを光学的分解及び光学的位置調
整をしたものと同じ効果が得られる。また、光電変換素
子の開口面積等の条件が同じであれば、光量についても
本発明の方が約1/2でよいことは明らかである。
Second, reflected light from two adjacent objects can be used by making them incident on the photoelectric conversion element arrays 1-1 and 1-2, respectively. In this case, the vertical mechanical scanning interval can be twice that of a CCD line sensor. The vertical resolution in this case is inversely proportional to the pitch of the photoelectric conversion element array in the row direction. For example, when used to read a facsimile document, the required resolution is 8do both horizontally (in the electrical scanning direction by the CCD sensor) and vertically (in the direction in which the document is fed by the mechanical system).
If the pitch a in the column direction is 10 μm when the pitch is t/mm, the pitch b in the row direction may also be 10 μm. horizontal 8do
If t/dragon, vertical 4 dots/gang, then the ratio is vertical/horizontal - 4/8 = 1. /2, so it is sufficient to set b/a = 2. Therefore, if the column direction pitch a is 10 μm, the row direction pitch b
is 20 μm. With this configuration, the mechanical scanning pitch in the vertical direction and the row pitch b of the two columns on the sensor match through optical reduction, so that the sensor that is advancing in the scanning direction in the external circuit By simply delaying the output by one scanning line using a time memory, etc.
The same effect can be obtained by optically disassembling and optically positioning two conventional sensors. Furthermore, it is clear that if the conditions such as the aperture area of the photoelectric conversion element are the same, the amount of light in the present invention can be reduced to about 1/2.

光電変換素子がpn接合ホトダイオードのように容量性
のものであれば、光の蓄積時間を2倍にとれるからであ
る。CCDラインセンサを1個使うのに比較して光感度
を2倍にとれるわけであるが、蓄積時間はそのままにす
れば読取り速度を2倍にする使い方も可能である。
This is because if the photoelectric conversion element is capacitive like a pn junction photodiode, the light accumulation time can be doubled. The light sensitivity can be doubled compared to using one CCD line sensor, but it is also possible to double the reading speed by keeping the storage time the same.

〔発明の効果〕〔Effect of the invention〕

=6一 以」−説明したように本発明は、2組のCCDラインセ
ンサをオンチップで形成することにより、2つの映像信
号を発生させ、従来必要であった原稿読取り装置の機械
的調整を減らし、小型化、省電力化できる効果がある。
As explained above, the present invention generates two video signals by forming two sets of CCD line sensors on-chip, and eliminates the mechanical adjustment of the document reading device that was conventionally required. This has the effect of reducing power consumption, downsizing, and power saving.

また単純に従来のセンサと置き換えても、2ライン分同
時に読み出すことができるので、CCDシフトレジスタ
の転送速度が同じならば読取速度は2倍に高速化するこ
とができる。若しくは2倍に高感度化できるという効果
がある。
Furthermore, even if the sensor is simply replaced with a conventional sensor, it is possible to read two lines at the same time, so if the transfer speed of the CCD shift register is the same, the reading speed can be doubled. Alternatively, there is an effect that the sensitivity can be made twice as high.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の主要部を示すブロック図、
第2図は本発明の一実施例における光電変換素子の配置
関係を示す平面模式図、第3図は従来の一例の主要部を
示すブロック図である。 1.1.1,1.2・・・光電変換素子列、2−1゜2
 2.2a、2b−・シフトレジスタ、3−1゜32.
3a、31〕−転送ゲーI・、4.4−+。 4−2・・クロック端子、5.5 1.5 2・・・比
出力回路、6.61.6−2・・・出力端子。 卒1父 猶2圀 峯3回
FIG. 1 is a block diagram showing the main parts of an embodiment of the present invention;
FIG. 2 is a schematic plan view showing the arrangement of photoelectric conversion elements in an embodiment of the present invention, and FIG. 3 is a block diagram showing the main parts of a conventional example. 1.1.1, 1.2...Photoelectric conversion element array, 2-1゜2
2.2a, 2b-・Shift register, 3-1°32.
3a, 31]-Transfer Game I・, 4.4-+. 4-2... Clock terminal, 5.5 1.5 2... Ratio output circuit, 6.61.6-2... Output terminal. Graduated 1 time, 2 years, 2 years, 3 times

Claims (1)

【特許請求の範囲】[Claims] 光電変換素子を所定の間隔で一列に配置した光電変換素
子列、前記光電変換素子から電荷を受取って転送するシ
フトレジスタ及び前記光電変換素子列と前記シフトレジ
スタの間に設けられた転送ゲートを備えたシングルチャ
ネル型CCDラインセンサが2組互いに平行に面対称の
位置に配置されて半導体基板に集積されていることを特
徴とするCCDイメージセンサ。
A photoelectric conversion element array in which photoelectric conversion elements are arranged in a line at predetermined intervals, a shift register that receives and transfers charges from the photoelectric conversion elements, and a transfer gate provided between the photoelectric conversion element array and the shift register. 1. A CCD image sensor comprising two sets of single-channel CCD line sensors arranged parallel to each other in plane-symmetrical positions and integrated on a semiconductor substrate.
JP61136658A 1986-06-11 1986-06-11 Ccd image sensor Pending JPS62291169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61136658A JPS62291169A (en) 1986-06-11 1986-06-11 Ccd image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61136658A JPS62291169A (en) 1986-06-11 1986-06-11 Ccd image sensor

Publications (1)

Publication Number Publication Date
JPS62291169A true JPS62291169A (en) 1987-12-17

Family

ID=15180472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61136658A Pending JPS62291169A (en) 1986-06-11 1986-06-11 Ccd image sensor

Country Status (1)

Country Link
JP (1) JPS62291169A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04763A (en) * 1990-04-18 1992-01-06 Mitsubishi Electric Corp Linear image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04763A (en) * 1990-04-18 1992-01-06 Mitsubishi Electric Corp Linear image sensor

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