JPS62291166A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS62291166A
JPS62291166A JP61136616A JP13661686A JPS62291166A JP S62291166 A JPS62291166 A JP S62291166A JP 61136616 A JP61136616 A JP 61136616A JP 13661686 A JP13661686 A JP 13661686A JP S62291166 A JPS62291166 A JP S62291166A
Authority
JP
Japan
Prior art keywords
type
region
field
photoresist
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61136616A
Other languages
Japanese (ja)
Inventor
Tokujiro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61136616A priority Critical patent/JPS62291166A/en
Publication of JPS62291166A publication Critical patent/JPS62291166A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238Complementary field-effect transistors, e.g. CMOS

Abstract

PURPOSE:To prevent a crystal defect from being formed in a semiconductor device by forming a field insulating film on first and second ion implanted regions, and using the first and second regions as first and second channel stoppers. CONSTITUTION:A photoresist 7 is formed on a P-type MOST region and its field region, with a metal layer 5 and the photoresist 7 as masks P-type impurity atom ions 9 are implanted to the field region of an N-type MOST. After the resist 7 is removed, a resist 8 is formed on the N-type MOST region and its field region, and N-type impurity atom ions 10 are implanted to the filed region of the P-type MOST. After the photoresist B is removed, the layer 5 is removed, with the nitride film of a second insulating film 4 as a mask the field is oxidized to form a thick oxide film as a field insulating film 11 on the field region, and a P-type channel stopper 12 and an N-type channel stopper 13 are simultaneously formed thereunder. Thus, a crystal defect can be prevented.
JP61136616A 1986-06-11 1986-06-11 Manufacture of semiconductor device Pending JPS62291166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61136616A JPS62291166A (en) 1986-06-11 1986-06-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61136616A JPS62291166A (en) 1986-06-11 1986-06-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS62291166A true JPS62291166A (en) 1987-12-17

Family

ID=15179466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61136616A Pending JPS62291166A (en) 1986-06-11 1986-06-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS62291166A (en)

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